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At least 163 records · Page 9

Cascaded resonant bridge converters

A converter for converting a low voltage direct current power source to a higher voltage, high frequency alternating current output for use in an electrical system where it is desired to use low weight cables and other circuit elements. The converter has a first stage series resonant (Schwarz) converter which converts the direct current power source to an alternating current by means of switching elements that are operated by a variable frequency voltage regulator, a transformer to step up the voltage of the alternating current, and a rectifier bridge to convert the alternating current to a direct current first stage output. The converter further has a second stage series resonant (Schwarz) converter which is connected in series to the first stage converter to receive its direct current output and convert it to a second stage high frequency alternating current output by means of switching elements that are operated by a fixed frequency oscillator. The voltage of the second stage output is controlled at a relatively constant value by controlling the first stage output voltage, which is accomplished by controlling the frequency of the first stage variable frequency voltage controller in response to second stage voltage. Fault tolerance in the event of a load short circuit is provided by making the operation of the first stage variable frequency voltage controller responsive to first and second stage current limiting devices. The second stage output is connected to a rectifier bridge whose output is connected to the input of the second stage to provide good regulation of output voltage wave form at low system loads.

Stuart, Thomas A.↗

Programmable high voltage power supply with regulation confined to the high voltage section

A high voltage power supply in a dc-dc converter configuration includes a pre-regulator which filters and regulates the dc input and drives an oscillator which applies, in turn, a low voltage ac signal to the low side of a step-up high voltage transformer. The high voltage side of the transformer drives a voltage multiplier which provides a stepped up dc voltage to an output filter. The output voltage is sensed by a feedback network which then controls a regulator. Both the input and output of the regulator are on the high voltage side, avoiding isolation problems. The regulator furnishes a portion of the drive to the voltage multiplier, avoiding having a regulator in series with the load with its attendant, relatively high power losses. This power supply is highly regulated, has low power consumption, a low parts count and may be manufactured at low cost. The power supply has a programmability feature that allows for the selection of a large range of output voltages.

Castell, Karen D.↗

Multijunction InGaAs thermophotovoltaic power converter

The experimental performance of a multijunction monolithic In(0.53)Ga(0. 47)As power converter under blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 sq cm chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. This is the first report of such a multijunction TPV. This is not a traditional tandem cell in which the junctions are stacked vertically. The junctions are each about 1mm long by 1 cm wide and are laterally connected across the 1 sq cm device area. This multijunction design has the potential for lower I(sup 2)R power loss since the smaller PN junction area limits the current to one-eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(sup 2)R loss, analogous to the way power utilities avoid I(sup 2)P loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

Wojtczuk, Steven↗

Multijunction InGaAs thermophotovoltaic power converter

The experimental performance of a multijunction monolithic lattice-matched 0.74 eV InGaAs thermophotovoltaic (TPV) power converter under 980 C blackbody irradiation is reported. Eight InGaAs PN junctions grown epitaxially on a semi-insulating wafer were monolithically integrated in series to boost the approximately 0.4 V photovoltage per typical InGaAs junction to over 3 volts for the 1 cm(exp 2) chip. This chip was originally designed and characterized for free-space 1.3 micron laser power beaming. The power efficiency of this TPV device is 16% for that part of the blackbody spectrum above the material bandgap. The device is shown to deliver about 1 watt of output power when driven with enough light. This is the first report of such a multijunction TPV device. This is not a traditional tandem cell in which the junctions are stacked vertically. Eight 1 mm long by 1 cm wide junctions are laterally connected across the device area. This multijunction design has the potential for lower I(exp 2)R power loss since the smaller PN junction area limits the current to one eighth that of the equivalent surface area. In essence, the current is traded for voltage to avoid the I(exp 2)R loss, analogous to the way power utilities avoid I(exp 2)R loss in high-tension power lines, by transforming the high current, low voltage generated at a power plant into a high voltage at a low current before transmitting the power over great distances.

Wojtczuk, Steven↗

Charge injection device as a candidate sensor for stellar tracking

Charge transfer devices (CTDs) are superior to the image dissector as stellar tracking sensors, considering their low voltage requirements, insensitivity to magnetic fields, good linearity, and low weight and power. An analysis of one type of CTD, called the charge injection device (CID), revealed an X-Y addressing capability which provides exceptional flexibility in array readout and results in enhanced S/N capability, a surface channel device which produces a larger dynamic range of operation, and exceptional and unique tolerance to optical overloads. A 128 row by 128 column CID array processed on silicon was evaluated in a cooled breadboard camera, and measured results indicate projected performance parameters of a large area CID array as follows: 20 micron square sensing site, noise not greater than 25 carriers per pixel, quantum yield of approximately 40% from 0.4 to 1.0 micron, and cooling requirements on the order of 0 degrees C.

Jones, C. S., Jr.↗

Absorption Voltages and Insulation Resistance in Ceramic Capacitors with Cracks

Time dependence of absorption voltages (V(sub abs)) in different types of low-voltage X5R and X7R ceramic capacitors was monitored for a maximum duration of hundred hours after polarization. To evaluate the effect of mechanical defects on V(sub abs)), cracks in the dielectric were introduced either mechanically or by thermal shock. The maximum absorption voltage, time to roll-off, and the rate of voltage decrease are shown to depend on the crack-related leakage currents and insulation resistance in the parts. A simple model that is based on the Dow equivalent circuit for capacitors with absorption has been developed to assess the insulation resistance of capacitors. Standard measurements of the insulation resistance, contrary to the measurements based on V(sub abs)), are not sensitive to the presence of mechanical defects and fail to reveal capacitors with cracks.

ceramic capacitor↗

High-voltage stepping supply with fast settling time

Waveform generator is used to derive low-voltage staircase waveform that feeds relatively long response time power supply. Power supply has high output voltage that is predetermined multiple of the input voltage.

Doong, H.↗

An Active Substrate Driver for Enabling Mixed-Voltage SOI Systems-On-A-Chip

The current trend for space application systems is towards fully integrated systems-on-a-chip. To facilitate this drive, high-voltage transistors must reside on the same substrate as low-voltage transistors. These systems must also be radiation tolerant, particularly for space missions such as the Europa Lander and Titan Explorer. SOI CMOS technology offers high levels of radiation hardness. As a result, a high-voltage lateral MOSFET has been developed in a partially-depleted (PD) SOI technology. Utilizing high voltages causes a parasitic transistor to have non-negligible effects on a circuit. Several circuit architectures have been used to compensate for the radiation induced threshold voltage shift of the parasitic back-channel transistor. However, a new architecture for high-voltage systems must be employed to bias the substrate to voltage levels insuring all parasitic transistors remain off. An active substrate driver has been developed to accomplish task. Additional information is contained in the original extended abstract.

Jackson, S. A.↗

Low Power, High Voltage Power Supply with Fast Rise/Fall Time

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Bearden, Douglas B.↗

Low power, high voltage power supply with fast rise/fall time

A low power, high voltage power supply system includes a high voltage power supply stage and a preregulator for programming the power supply stage so as to produce an output voltage which is a predetermined fraction of a desired voltage level. The power supply stage includes a high voltage, voltage doubler stage connected to receive the output voltage from the preregulator and for, when activated, providing amplification of the output voltage to the desired voltage level. A first feedback loop is connected between the output of the preregulator and an input of the preregulator while a second feedback loop is connected between the output of the power supply stage and the input of the preregulator.

Bearden, Douglas B.↗

Controllable high voltage source having fast settling time

A high voltage dc stepping power supply for sampling a utilization device such as an electrostatic analyzer has a relatively fast settling time for voltage steps. The supply includes a waveform generator for deriving a low voltage staircase waveform that feeds a relatively long response time power supply, deriving a high output voltage generally equal to a predetermined multiple of the input voltage. In the power supply, an ac voltage modulated by the staircase waveform is applied to a step-up transformer and then to a voltage multiplier stack to form a high voltage, relatively poor replica of the input waveform at an intermediate output terminal. A constant dc source, applied to the input of the power supply, biases the voltage at the intermediate output terminal to be in excess of the predetermined multiple of the input voltage.

Doong, H.↗

Error-Compensated Integrate and Hold

Differencing circuit cancels error caused by switching transistors capacitance. In integrate and hold circuit using JFET switch, gate-to-source capacitance causes error in output voltage. Differential connection cancels out error. Applications in systems where very low voltages sampled or many integrate-and -hold cycles before circuit is reset.

Matlin, M.↗

Power Electronics for a Miniaturized Arcjet

A 0.3 kW Power Processing Unit (PPU) was designed, tested on resistive loads, and then integrated with a miniaturized arcjet. The main goal of the design was to minimize size and mass while maintaining reasonable efficiency. In order to obtain the desired reductions in mass, simple topologies and control methods were considered. The PPU design incorporates a 50 kHz, current-mode-control, pulse-width-modulated (PWM), push-pull topology. An input voltage of 28 +/- 4V was chosen for compatibility with typical unregulated low voltage busses anticipated for smallsats. An efficiency of 0.90 under nominal operating conditions was obtained. The component mass of the PPU was 0.475 kg and could be improved by optimization of the output filter design. The estimated mass for a flight PPU based on this design is less than a kilogram.

Pinero, Luis R.↗

The Space Technology 5 Power System Design

The Space Technology 5 (ST5) mission is a NASA New Millennium Program (NMP) project that was developed to validate new technologies for future missions and to demonstrate the feasibility of building and launching multiple, miniature spacecraft that can operate as science probes, collecting research quality measurements. The three satellites in the ST5 constellation will be launched into a sun synchronous LEO (Low Earth Orbit) in early 2006. ST5 fits in the 25 kilogram and 24 Watt class of miniature but fully capable spacecraft. The power system design features the use of new technology components and a low voltage power bus. In order to hold the mass and volume low and to qualify new technologies for future use in space, high efficiency triple junction solar cells and a lithium ion battery were baselined into the design. The Power System Electronics (PSE) was designed for a high radiation environment and uses hybrid microcircuits for power switching and over current protection. The ST5 power system architecture and technologies will be presented.

Stewart, Karen D.↗

Dielectric Barrier Discharge Plasma Actuator for Flow Control

This report is Part II of the final report of NASA Cooperative Agreement contract no. NNX07AC02A. It includes a Ph.D. dissertation. The period of performance was January 1, 2007 to December 31, 2010. Part I of the final report is the overview published as NASA/CR-2012- 217654. Asymmetric dielectric barrier discharge (DBD) plasma actuators driven by nanosecond pulses superimposed on dc bias voltage are studied experimentally. This produces non-self-sustained discharge: the plasma is generated by repetitive short pulses, and the pushing of the gas occurs primarily due to the bias voltage. The parameters of ionizing pulses and the driving bias voltage can be varied independently, which adds flexibility to control and optimization of the actuators performance. The approach consisted of three elements coupled together: the Schlieren technique, burst mode of plasma actuator operation, and 2-D numerical fluid modeling. During the experiments, it was found that DBD performance is severely limited by surface charge accumulation on the dielectric. Several ways to mitigate the surface charge were found: using a reversing DC bias potential, three-electrode configuration, slightly conductive dielectrics, and semi conductive coatings. Force balance measurements proved the effectiveness of the suggested configurations and advantages of the new voltage profile (pulses+bias) over the traditional sinusoidal one at relatively low voltages. In view of practical applications certain questions have been also addressed, such as electrodynamic effects which accompany scaling of the actuators to real size models, and environmental effects of ozone production by the plasma actuators.

Opaits, Dmitry, F.↗

Mixed Voltage VLSI Design

We present a technique for minimizing the power dissipated in a VLSI chip by lowering the operating voltage without any significant penalty in the chip throughput even though low voltage operation results in slower circuits.

VLSI↗