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At least 163 records · Page 9

Minus 55 to plus 200 deg C 12 bit analog-to-digital converter

A 12 bit successive approximation analog to digital converter that offers moderately high speed precision data conversion at a reasonable level of cost and complexity is studied. The ADCH10HT extends this capability over a temperature range of -55 to +200 C. No missing-code performance is maintained over the entire temperature range. The converter is completely self-contained with internal clock and +10 volt reference. The CMOS devices offer low power dissipation, so that the internal temperature of the hybrid circuit does not rise as much from self heating. In CMOS circuits, pn junction leakage currents are returned to the supplies so that the logic keeps working at temperatures up to 250 C.

Smith, L. R.↗

New measurement of the Fano factor of mercuric iodide

It is pointed out that mercuric iodide (HgI2) shows great promise as a high-resolution X-ray detector for use in X-ray astronomy. Development of mercuric iodide for astronomical work has required investigation of the temperature dependence of the HgI2 crystal parameters such as leakage current, resolution, and mobility of the charge carriers. The first studies in connection with these investigations have led to a new value of the Fano factor of 0.19 + or - 0.03. The best value previously reported was 0.27 measured at room temperature. The new upper limit of 0.19 for the HgI2 Fano factor was determined by cooling the HgI2 crystal and preamp to -20 C. It is concluded that room-temperature energy resolution of HgI2 is not limited by charge generation statistics but rather by collection efficiency.

Ricker, G. R.↗

Plasma flow measurements in a simulated low earth orbit plasma

The employment of large, higher power solar arrays for space operation has been considered, taking into account a utilization of high operating voltages. In connection with the consideration of such arrays, attention must be given to the fact that the ambient environment of space contains a tenuous low energy plasma which can interact with the high voltage array causing power 'leakage' and arcing. An investigation has been conducted with the aim to simulate the behavior of such an array in low-earth-orbit (LEO). During the experiments, local concentrations of the 'leakage' current were observed when the panel was at a high voltage. These concentrations could overload or damage a small area of cells in a large string. It was hypothesized that this effect was produced by electrostatic focusing of the particles by the sheath fields. To verify this experimentally, an end-effect Langmuir probe was employed. The obtained results are discussed.

Gabriel, S. B.↗

Engineering sciences area and module performance and failure analysis area

Photovoltaic-array/power-conditioner interface studies are updated. An experiment conducted to evaluate different operating-point strategies, such as constant voltage and pilot cells, and to determine array energy losses when the array is operated off the maximum power points is described. Initial results over a test period of three and a half weeks showed a 2% energy loss when the array is operated at a fixed voltage. Degraded-array studies conducted at NE RES that used a range of simulated common types of degraded I-V curves are reviewed. The instrumentation installed at the JPL field-test site to obtain the irradiance data was described. Experiments using an optical filter to adjust the spectral irradiance of the large-area pulsed solar simulator (LAPSS) to AM1.5 are described. Residential-array research activity is reviewed. Voltage isolation test results are described. Experiments performed on one type of module to determine the relationship between leakage current and temperature are reviewed. An encapsulated-cell testing approach is explained. The test program, data reduction methods, and initial results of long-duration module testing are described.

Ross, R. G., Jr.↗

Characterization of silicon-gate CMOS/SOS integrated circuits processed with ion implantation

The double layer metallization technology applied on p type silicon gate CMOS/SOS integrated circuits is described. A smooth metal surface was obtained by using the 2% Si-sputtered Al. More than 10% probe yield was achieved on solar cell controller circuit TCS136 (or MSFC-SC101). Reliability tests were performed on 15 arrays at 150 C. Only three arrays failed during the burn in, and 18 arrays out of 22 functioning arrays maintained the leakage current below 100 milli-A. Analysis indicates that this technology will be a viable process if the metal short circuit problem between the two metals can be reduced.

Woo, D. S.↗

Analytical investigation of critical MHD phenomena

Development and analysis of schemes for suppression of the startup overvoltage transient in the AEDC High Performance Demonstration Experiment (HPDE), analysis of performance enhancement due to electrode voltage drop reduction by use of pyrolytic graphites in the HPDE, prediction of optimal loading schemes for the HPDE, prediction of PHDE performance with a diagonal electrical connection, and predictions of the likelihood and effects of axial current leakage between adjacent electrodes in the HPDE are reviewed. Simulations of tests at the AEDC/HPDE with STD Research Corporation multidimensional and time dependent computer codes provided additional validation for the computer codes and shed light on physical mechanisms which govern performance and durability of MHD power generators. The magnetoaerothermal effect was predicted by STD Research Corporation to have a significant effect on the HPDE/MHD generator performance at high interaction.

Source record↗

J series thruster isolator failure analysis

Three Hg propellant isolators (two cathode and one main) failed during testing in the Mission Profile Life Test. These failures involved contamination of the surface of the alumina insulating body which resulted in heating of the vaporizer by leakage current from the high voltage supply, with subsequent loss of propellant flow rate control. Failure analysis of the isolators showed the surface resistance was temperature dependent and that the alumina could be restored to its original insulating state by grit blasting the surface. The contaminant was identified as carbon and the most likely sources identified as ambient facility hydrocarbons, directed back-sputtered facility materials, and outgassing from organic insulating materials within the thruster envelope. Methods to eliminate contamination from each of these sources are described.

Campbell, J. W.↗

Deep diode arrays for X-ray detection

Temperature gradient zone melting process was used to form p-n junctions in bulk of high purity silicon wafers. These diodes were patterned to form arrays for X-ray spectrometers. The whole fabrication processes for these X-ray detectors are reviewed in detail. The p-n junctions were evaluated by (1) the dark diode I-V measurements, (2) the diode C sub I - V measurements, and (3) the MOS C-V measurements. The results showed that these junctions were linearly graded in charge distribution with low reverse bias leakage current flowing through them (few nA at -10 volts). The X-ray detection experiments showed that an FWHM of 500 eV was obtained from these diodes with a small bias of just -5 volts (for X-ray source Fe55). A theoretical model was proposed to explain the extra peaks found in the energy spectra and a very interesting point - cross talk effect was pointed out. This might be a solution to the problem of making really high resolution X-ray spectrometers.

Zemel, J. N.↗

Advanced detectors and signal processing for bubble memories

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Kryder, M. H.↗

Fabrication of an X-Ray Imaging Detector

X-ray detector array yields mosaic image of object emitting 1- to 30-keV range fabricated from n-doped silicon wafer. In proposed fabrication technique, thin walls of diffused n+ dopant divide wafer into pixels of rectangular cross section, each containing central electrode of thermally migrated p-type metal. This pnn+ arrangement reduces leakage current by preventing transistor action caused by pnp structure of earlier version.

Alcorn, G. E.↗

The aging correlation (RH + t): Relative humidity (%) + temperature (deg C)

An aging correlation between corrosion lifetime, and relative humidity RH (%) and temperature t (C) has been reported in the literature. This aging correlation is a semi-log plot of corrosion lifetime on the log scale versus the interesting summation term RH(%) + t(C) on the linear scale. This empirical correlation was derived from observation of experimental data trends and has been referred to as an experimental law. Using electrical resistivity data of polyvinyl butyral (PVB) measured as a function of relative humidity and temperature, it was found that the electrical resistivity could be expressed as a function of the term RH(%) t(C). Thus, if corrosion is related to leakage current through an organic insulator, which, in turn, is a function of RH and t, then some partial theoretical validity for the correlation is indicated. This article describes the derivation of the term RH(%) t(C) from PVB electrical resistivity data.

Cuddihy, E. F.↗

Moisture-temperature degradation in module encapsulants: The general problem of moisture in photovoltaic encapsulants

A general research approach was outlined toward understanding water-module interactions and the influence of temperature involving the need to: quantify module performance loss versus level of accumulated degradation, establish the dependence of the degradation reaction rate on module moisture and temperature levels, and determine module moisture and temperature levels in field environments. These elements were illustrated with examples drawn from studies of the now relatively well understood module electrochemical degradation process. Research data presented include temperature and humidity-dependent equilibrium leakage current values for multiparameter module material and design configurations. The contributions of surface, volume, and interfacial conductivities was demonstrated. Research directions were suggested to more fully understand the contributions to overall module conductivity of surface, volume, and interfacial conductivities over ranges of temperature and relative humidity characteristic of field environments.

Mon, G. R.↗

Preliminary study: Moisture-polymer interaction. Stuby objectives

The problems associated with mathematically modeling water-module interaction phenomena, including sorption and desorption, diffusion, and permeation are discussed. With reliable analytical models, an extensive materials data base, and solar radiation surface meteorological observations (SOLMET) weather data, predicting module lifetimes in realistic environments can become a practical reality. The status of the present techniques of simulating the various transport mechanisms was reported. The Dent model (a modified Brunauer-Emmet-Teller) approach represented polyvinyl butyral (PVB) sorption data. A 100-layer material model and Fick's diffusion model gave diffusivity values exhibiting adequate agreement with those measured for PVB. Diffusivity of PVB is concentration dependent, decreasing as the water content in PVB increases. The temperature dependence of diffusion in PVB is well modeled by the Arrhenius rate equation. Equilibrium conductivity and leakage current data are well represented by Hearle's model for bulk ionic conductivity. A nodal network analysis using the Systems Improved Numerical Differencing Analyzer (SINDA) Thermal Analyzer gave reasonable correlation with measurable data. It is concluded that realistic lifetime predictions seem to be feasible.

Wen, L. C.↗

LEO high voltage solar array arcing response model

A series of mathematical models were developed that describe the electrical behavior of a large solar cell array floating electrically in the low Earth orbit (LEO) space plasma and struck by an arc at a point of negative bias. There are now three models in this series: ARCII, which is a fully analytical, linearized model; ARCIII, which is an extension of ARCIII that includes solar cell inductance as well as load reactance; Nonlinear ARC, which is a numerical model able to treat effects such as non-linearized, i.e., logarithmic solar cell I/V characteristics, conductance switching as a solar cell crosses plasma ground on a voltage excursion and non-ohmic plasma leakage current collection.

Metz, Roger N.↗

Water-absorbing capacitor system for measuring relative humidity

A method and apparatus using a known water-absorbent polymer as a capacitor which is operated at a dc voltage for measuring relative humidity is presented. When formed as a layer between porous electrically-conductive electrodes and operated in an RC oscillator circuit, the oscillator frequency varies inversely with the partial pressure of the moisture to be measured. In a preferred embodiment, the capacitor is formed from Nafion and is operated at a low dc voltage with a resistor as an RC circuit in an RC oscillator. At the low voltage, the leakage current is proper for oscillation over a satisfactory range. The frequency of oscillation varies in an essentially linear fashion with relative humidity which is represented by the moisture being absorbed into the Nafion. The oscillation frequency is detected by a frequency detector.

Laue, Eric G.↗

Optical communication with semiconductor laser diodes

A 25 megabit/sec direct detection optical communication system that used Q=4 PPM signalling was constructed and its performance measured under laboratory conditions. The system used a single-mode AlGaAs laser diode transmitter and low noise silicon avalanche photodiode (APD) photodetector. Comparison of measured performance with the theoretical revealed that modeling the APD output as a Gaussian process under conditions of negligible background radiation and low (less than 10 to the -12 power A) APD bulk leakage currents leads to substantial underestimates of optimal APD gain to use and overestimates of system bit error probability. A procedure is given to numerically compute system performance which uses the more accurate Webb's Approximation of the exact Conradi distribution for the APD ouput signal that does not require excessive amounts of computer time (a few minutes of VAX 8600 CPU time per system operating point). Examples are given which illustrate the breakdown of the Gaussian approximation in assessing system performance. This system achieved a bit error probability of 10 to the -6 power at a received signal energy corresponding to an average of 60 absorbed photons/bit and optimal APD gain of 700.

Davidson, F.↗

Space station induced electromagnetic effects

Several mechanisms which can cause electric (E) and magnetic (B) field contaminations of the Space Station environment are identified. The level of E and B fields generated by some of them such as the motion of the vehicle across the ambient magnetic field B(0) and the 20-kHz leakage currents and charges can be controlled by proper design considerations. On the other hand, there are some mechanisms which are inherent to the interaction of large vehicles with the plasma and probably their contributions to E and B fields cannot be controlled; these include plasma waves in the wake and ram directions and the effects of the volume current generated by the ionization of neutrals. The interaction of high-voltage solar arrays with plasma is yet another rich source of E and B fields and it is probably uncontrollable. Wherever possible, quantitative estimates of E and B are given. A set of recommendations is included for further study in areas where indepth knowledge is seriously lacking.

Singh, N.↗

Encapsulant free-surfaces and interfaces: Critical parameters in controlling cell corrosion

Results are reported of studying the interaction of moisture with photovoltaic (PV) modules and custom-built test coupons in both laboratory and outdoor ambient environments. Characteristics measured included module cell-to-frame leakage currents, encapsulant bulk and surface currents, glass surface currents, and encapsulant/glass interface currents as functions of temperature and humidity. Using a computer model of interelectrode conduction, preferential conduction paths in PVB- and EVA-encapsulated modules are identified. In comparing the results of field and laboratory test environments on identical samples, comments are made about the greater severity of the outdoor environment. Several aspects of water-module interaction, including design strategies and continuing research, are discussed.

Mon, G.↗