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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Gallium nitride electromagnetic pulse arrestor

A GaN diode EMP arrestor exhibits breakdown in <10 ns at reverse-bias voltage >20 kV. Additionally, the arrestor exhibits avalanche ruggedness at 1 kA/cm 2 in a 1 mm 2 device (i.e. 10 A absolute current) over a period of 500 ns following the onset of breakdown. Finally, the specific on-resistance in the forward direction is <20 mΩ cm 2 .

Kaplar, Robert↗
DOE OSTI2022

Rapid isolation of cyclotron-produced gallium-68

Methods for rapid isolation of radionuclides (e.g., 68Ga) produced using a cyclotron and methods for recycling of the parent isotope (e.g., 68Zn) are disclosed. In one version of the method, a solution including a radionuclide (e.g., 68Ga) is created from a target including cations (e.g., 68Zn). The solution including the radionuclide is passed through a first column including a sorbent comprising a hydroxamate resin to adsorb the radionuclide on the sorbent, and the radionuclide is eluted off the sorbent. The cations (e.g., 68Zn) are recovered from a recovery solution that has passed through the first column by passing the recovery solution through a second column including a second sorbent comprising a cation exchange resin.

62 RADIOLOGY AND NUCLEAR MEDICINE↗
DOE OSTI2022

Plasma-based edge terminations for gallium nitride power devices

A p-n diode includes a first electrode, a n-GaN layer on the first electrode, a p-GaN layer on the n-GaN layer, and a second electrode on a first portion of the p-GaN layer. A region of the p-GaN layer surrounding the electrode is a passivated region. Treating a GaN power device having a p-GaN layer includes covering a portion of the p-GaN layer with a metal layer, exposing the p-GaN layer to a hydrogen plasma, and thermally annealing the p-GaN layer, thereby passivating a region of the p-GaN layer proximate the metal layer.

Zhao, Yuji↗