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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Real-Time Optimization Workflow Status Update

Economically optimal and safe operation of integrated energy systems (IES) requires optimization at many different time scales. A real-time optimization (RTO) workflow will attempt to maximize revenue and minimize operational costs on a time scale of minutes to hours. Such a workflow requires the use of a digital twin (DT), which is a virtual representation of a physical system. The DT is updated using real-time data from the physical system, and serves as a model in an optimization framework. The optimization results are then sent back to the physical system to complete the loop. This report details the progress made in developing building blocks for a DT/RTO framework. The Risk Analysis Virtual Environment (RAVEN) platform within the Framework for Optimization of Resources and Economics (FORCE) tool suite can perform many of the tasks required for building a DT and performing RTO. The first item of this report details RAVEN enhancements that enable RAVEN workflows to be run in various environments. Data communication between the physical system and its DT is essential for successful RTO. This includes preprocessing real-time data, loading data into a data warehouse, and querying the stored data. The second section of this report describes the progress made in implementing an adapter in Python in order for Deep Lynx to handle the data communication. Typical dispatch optimization frameworks are built on linear programming (LP). The prototype RTO workflow developed in this report uses an LP problem as a part of a receding-horizon- or economic model predictive control (EMPC) based optimization. The third section of this report details the framework of an RTO workflow in which the system consists of a simple electrical storage device. A DT can be built from a reduced-order model (ROM). Integrating a ROM into a typical LP optimization framework has been challenging because most optimization packages require the user to write algebraic expressions for the system model. The final section of this report shows how an externally built RAVEN ROM can be integrated in an RTO framework by using the Python package Pyomo. This demonstrates the RTO workflow capability from a software-only perspective and is an important step in demonstrating the capability to implement an RTO workflow for a physical system.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

Shooter Alarm System Final Report FY23

Lawrence Livermore National Laboratory (LLNL) is developing a multiphysics sensor package for automatic live arms fire detection for use in schools, houses of worship, hospi tals, etc. The goal is to have a package the size of a common smoke or CO2 detector with a price point of $50 or less which may be deployed throughout the aforementioned facilities. The commercial device will detect live gun fire with low probability of false alarm and auto matically alert first responders. A prototype board with four accelerometers, two infrared (IR) and two microphones has been developed and deployed at two experiments at LLNL’s Small Firearms Training Facility (SFTF). The device successfully and consistently measured signals on the accelerometer and acoustic channels. IR responses were measured depending upon the environment and sound source.

42 ENGINEERING↗
DOE OSTI2024

Double-Side Cooled 1.2kV, 300A SiC MOSFET Phase-leg Modules for 200 kW, > 100 kW/L Traction Inverters

The packaging of a double-side cooled 1.2 kV, 149 A SiC phase-leg modules has been reported in recent years for making 100 kW, 100 kW/L traction inverters. Each phase-leg module consists of two SiC MOSFETs, one per switch position. Six of the phase-leg modules are assembled into a segmented inverter configuration to meet the power and power density requirement. In this work, the layout of the phase-leg module was redesigned to include four of the SiC MOSFETs, two per switch position, with the aim of doubling the power to 200 kW and increasing the power density beyond 100 kW/L, but with only a 10.25% footprint increase. Key features of the packaging technology developed in the previous work were implemented in the current work, which include silver sintering for chip bonding and porous silver inter-posts for bonding device source pads to substrate. Parasitic extraction simulation showed that the four-chip module has a low parasitic inductance of 4.7 nH, like the two-chip module. Static characterization of the four-chip prototypes showed a low average on-resistance of 9 mΩ and a low average leakage current of 5 nA at Vds of 1.2 kV.

Zhang, Zichen↗
DOE OSTI2023

Design and Fabrication of Quantum Information Processing Devices (Final Report)

The goal of this work is to develop a wideband Josephson Parametric Amplifier (JPA) by the combination of a coplanar impedance transformer and a lumped Josephson Parametric Amplifier. Josephson Parametric Amplifiers take advantage of the nonlinear inductance of Josephson junctions and the nearly lossless superconductor circuits to achieve wave mixing and amplification with only quantum-limited added noise, which makes it a key component in quantum measurements, such as single-shot qubit measurement. However, the current JPAs generally have a relatively high quality factor and small bandwidth (around 50MHz to 100MHz), which limits their ability in measuring signals from a broad spectrum. Therefore, the work planned to use a coplanar impedance transformer to enhance the coupling between JPA and the signals, resulting in a small quality factor and large bandwidth. By decreasing the quality factor of JPA to around 3, one can achieve around 20dB gain within a bandwidth of several hundred MHz. Moreover, the wideband feature allows this device to explore the frequency dependence of the coupling between the JPA and the signals. Because the impedance transformer is based on a coplanar transmission line and requires no modifications of the lumped JPA, it is relatively straightforward to embed it in the current fabrication, package, and testing process for lumped JPA. The impedance transformer can be fabricated by liftoff or etching process with the lumped JPA together, which adds no fabrication complexity. The only difference is the size, which is around 3~5 times larger than lumped JPA. This may make the number of available chips on a single wafer lower. As for the public benefits, the development of this wideband JPA will make it possible to use just a single JPA device for multi-frequency signals, for example, the readout signals of a superconducting qubit chip with multiplexed readout bus. This would greatly decrease the demand for JPAs in quantum measurements.

42 ENGINEERING↗
DOE OSTI2024

Electron-impact excitation data for W 2+ in support of tungsten spectroscopy and re-deposition measurements for magnetically-confined plasmas

Abstract To better understand plasma wall interactions involving tungsten, accurate atomic structure and electron-impact driven collisional processes for near-neutral ion stages of tungsten are required. Complementing existing work on neutral and singly ionised tungsten, atomic structure and collisional calculations for W 2+ electron-impact excitation have been completed. These excitation calculations are an important component of S/XB coefficients for near-neutral charge states, which may be used to spectroscopically infer re-deposition of tungsten at the plasma-solid boundary of fusion relevant devices. With W 2+ in particular having emission lines that can be observed at ultraviolet (UV) wavelengths, while higher charge states of tungsten are unlikely to have lines possible to observe outside of the vacuum UV range. The atomic structure was generated using the General-purpose Relativistic Atomic Structure Package (GRASP 0 ), implementing the Multi-configuration Dirac Fock approach. This structure was the basis for a subsequent Dirac R -matrix electron-impact excitation calculation to provide Maxwellian averaged rate coefficients. A synthetic spectrum was generated from this data using a collisional-radiative model to predict the strongest W III spectral lines and these lines were compared to emission from the Compact Toroidal Hybrid (CTH) plasma device. Several of the strongest W III lines are observed in CTH and agree well with the modelled line wavelengths and intensities, a table of these lines is provided that could be observed in other devices.

McCann, M. (ORCID:0000000215321240)↗
DOE OSTI2026

The Heterogeneous Integration of Electronic Components

Heterogeneous integration (HI) of electronics components is broadly recognized as a powerful and crucial enabler for the continued growth of computing and communication. From 2010 onwards, the value of HI is increasingly visible in the advanced packaging used in artificial intelligence, high-performance computing, smartphones and communications product implementations. In this Perspective, we argue that HI is crucial to semiconductors and more broadly to the continued evolution of computing and communications. We use leading-edge advanced packaging examples to represent the value, advancements and opportunities for HI. To succeed, it is critical to develop comprehensive HI roadmaps that inform collaborations across the design, manufacturing and reliability spectrum between systems architects, packaging and semiconductor technologists to common goals. Although this article does not provide a full roadmap, we instead detail additional parameters for artificial intelligence, smartphone and other cellular communication devices, and their constituent building blocks including interconnects, power electronics, photonics, thermal management, reliability, modelling and co-design, to foster greater collaboration opportunities among academia, research laboratories and industry.

42 ENGINEERING↗
DOE OSTI2022

Automatic Differentiation of C++ Codes on Emerging Manycore Architectures with Sacado

Automatic differentiation (AD) is a well-known technique for evaluating analytic derivatives of calculations implemented on a computer, with numerous software tools available for incorporating AD technology into complex applications. However, a growing challenge for AD is the efficient differentiation of parallel computations implemented on emerging manycore computing architectures such as multicore CPUs, GPUs, and accelerators as these devices become more pervasive. In this work, we explore forward mode, operator overloading-based differentiation of C++ codes on these architectures using the widely available Sacado AD software package. In particular, we leverage Kokkos, a C++ tool providing APIs for implementing parallel computations that is portable to a wide variety of emerging architectures. Here we describe the challenges that arise when differentiating code for these architectures using Kokkos, and two approaches for overcoming them that ensure optimal memory access patterns as well as expose additional dimensions of fine-grained parallelism in the derivative calculation. We describe the results of several computational experiments that demonstrate the performance of the approach on a few contemporary CPU and GPU architectures. We then conclude with applications of these techniques to the simulation of discretized systems of partial differential equations.

97 MATHEMATICS AND COMPUTING↗
DOE OSTI2023

NED_Asteroid_Energy_Deposition

In the event of a potentially catastrophic asteroid impact, with sufficient warning time, deploying a nuclear device remains a powerful option for planetary defense if a kinetic impactor proves insufficient. Predicting the effectiveness of a potential nuclear deflection or disruption mission depends on accurate multiphysics simulations of the device's x-ray energy deposition into the asteroid and the resulting material ablation. These simulations span many orders of magnitude, require a variety of different complex physics packages, and are computationally expensive. Having an efficient and accurate way of modeling this system is necessary for exploring a mission's sensitivity to the asteroid's range of physical properties. To expedite future simulations, we present a completed x-ray energy deposition model developed using the radiation-hydrodynamics code Kull which can be used to initiate a nuclear mitigation mission hydrocode. The model spans a wide variety of possible mission initial conditions: four different asteroid-like materials (Silicon Dioxide, Forsterite, Iron, and Ice), two different source spectra (1 and 2 keV blackbodies), and then a broad range of radiation fluences (0.0001 to 1 kt per square meter), source durations (10 to 100 ns), and asteroid porosities (0 to 80 percent). Using blowoff momentum as the primary metric, the modelinitiated simulation results match the full radiation-hydrodynamics results to within 10 percent. Please reference the journal article: Burkey et al., X-Ray Energy Deposition Model for Simulating Asteroid Response to a Nuclear Planetary Defense Mitigation Mission, Planetary Science Journal, (2023) for more information.

Managan, RobertA↗
DOE OSTI2024

Power Electronics Materials and Bonded Interfaces - Reliability and Lifetime

Advanced packaging technologies are currently being designed and developed by the power electronics industry however, the maximum operating temperature is still limited to 175 degrees Celsius for the silicon carbide devices. Bonded materials such as sintered copper and polymeric materials are potential candidates for high temperature operation, but it is critical to characterize and evaluate its reliability under harsh operating conditions. In this project, we discuss the results of the accelerated experiments conducted on sintered copper and polymeric materials. Additionally, a novel framework to develop the lifetime prediction model of bonded interfaces through employing statistical and machine learning models are described. In this task, scanning acoustic microscope images of bonded interfaces obtained under thermal cycling experiments are used as the data.

ENGINEERING↗
DOE OSTI2020

Investigation of Dynamic Temperature-Sensitive Electrical Parameters for Medium-Voltage Low-Current Silicon Carbide and Silicon Devices

This paper presents five dynamic temperature-sensitive electrical parameters (TSEPs) for the medium-voltage silicon carbide (SiC) and silicon (Si) devices. The theoretical temperature dependence of these parameters is analyzed. A test platform that enables to implement the temperature relevant dynamic characterization is developed. The tested TSEPs are summarized in terms of their relationship with junction temperature, drain/collector current, DC voltage, and external gate resistance. The comparison between the 3 kV 12 A Si IGBT and 3.3 kV 5 A SiC MOSFET with the identical TO-263 package is conducted. The results verify that the turn-off drain-source voltage switching rate achieves better thermal sensitivity for medium-voltage low-current SiC MOSFETs compared with Si IGBTs. Both the turn-on and turn-off delay time exhibit better thermal linearity for the two devices. The turn-off delay time further achieves five times better thermal sensitivity than the turn-on delay time for investigated medium-voltage SiC MOSFETs.

Ni, Ze↗
DOE OSTI2022

Experimental measurements and mathematical modeling of cold plate for aviation thermal management

Herein, this study, which has been motivated by the recent applications of the cold plate device in aviation thermal management, reports on physics-based mathematical models derived from the conservation laws of mass, momentum, and energy, and empiricism-based models. One of the objectives of the present work is to report on an elaborate and successful experimental work carried out on an additively manufactured device for the purpose of rigorously validating the numerical predictions. The excellent agreement between the numerical predictions and measured performance provides much needed confidence in the implementation, in the software package, of the offset-strip fin passage correlations, as well as in the software implementation of user-defined wavy fin correlations for aerospace heat exchangers and cold plates operating with ram air at Reynolds numbers below 8000. The contributions of this work can also be found in the development of a new and accurate thermal-hydraulic analysis procedure, referred to in this paper as plate-fin analogy. Results from this procedure are compared with those from thermal resistance network. The comparative study in this paper of the bulk and discrete enthalpy flux method is also new, as is the relative assessment of four off-set strip fin thermal-hydraulic models.

42 ENGINEERING↗
DOE OSTI2023

Long operating lifetime mid-infrared LEDs based on black phosphorus

Abstract Black phosphorus (BP) is a narrow bandgap layered semiconductor promising for mid-infrared optoelectronic applications. BP-based devices have been shown to surpass state-of-the-art mid-infrared detectors and light-emitting diodes (LEDs) in terms of performance. Despite their device advantages, the material’s inherent instability in the air could hinder its use in practical optoelectronic applications. Here, we investigated the impact of passivation on the device lifetime of BP LEDs, which deteriorate in a matter of seconds without using passivation. The lifetime is significantly extended with an Al 2 O 3 passivation layer and nitrogen packaging via atomic layer deposition and ultra-violet curable resin sealing. The operational lifetime (half-life) at room temperature is extrapolated to be ~15,000 h with an initial power density of 340 mW/cm 2 based on accelerated life testing. The present results indicate that efficient BP optoelectronics can be highly robust through simple and scalable packaging technologies, with important practical implications for mid-infrared applications.

42 ENGINEERING↗
DOE OSTI2022

HPC Molecular Simulation Tries Out a New GPU: Experiences on Early AMD Test Systems for the Frontier Supercomputer

Molecular simulation is an important tool for nu- merous efforts in physics, chemistry, and the biological sciences. Simulating molecular dynamics requires extremely rapid cal- culations to enable sufficient sampling of simulated temporal molecular processes. The Hewlett Packard Enterprise (HPE) Cray EX Frontier supercomputer installed at the Oak Ridge Leadership Computing Facility (OLCF) will provide an exascale resource for open science, and will feature graphics processing units (GPUs) from Advanced Micro Devices (AMD). The future LUMI supercomputer in Finland will be based on an HPE Cray EX platform as well. Here we test the ports of several widely used molecular dynamics packages that have each made substantial use of acceleration with NVIDIA GPUs, on Spock, the early Cray pre-Frontier testbed system at the OLCF which employs AMD GPUs. These programs are used extensively in industry for pharmaceutical and materials research, as well as academia, and are also frequently deployed on high-performance computing (HPC) systems, including national leadership HPC resources. We find that in general, performance is competitive and installation is straightforward, even at these early stages in a new GPU ecosystem. Our experiences point to an expanding arena for GPU vendors in HPC for molecular simulation.

Sedova, Ada↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Scientific/Technical Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 µm or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

20KV↗
DOE OSTI2023

20 kV Gallium Nitride pn Diode Electro-Magnetic Pulse Arrestor for Grid Reliability (Final Report)

This project developed vertical Gallium Nitride (GaN) pn diodes under two main thrusts: (1) A focus on relatively higher-voltage devices for use as fast EMP arrestors to protect the electric grid; and (2) A focus on a Foundry effort to establish the manufacturability of relatively lower-voltage devices. For the first thrust, the aim was to develop devices that go into avalanche breakdown to clamp the voltage across sensitive grid equipment subject to voltage transients induced by electromagnetic pulses (EMPs). Devices with breakdown voltages exceeding 6.5 kV were achieved, and breakdown times shorter than 1 ns were demonstrated, which is sufficiently fast to protect against the fast component of an EMP-induced signal. Key challenges included the epitaxial growth of thick (50 um or more), low-doped (low 10 15 cm -3 range) GaN layers comprising the drift regions of the diodes, as well as the design and fabrication of edge termination structures (step-etched junction termination extensions) to prevent premature breakdown. Midway through the project, an additional emphasis was put on large-area, high-current devices, and forward currents of approximately 400 A were achieved in composite devices towards the end of the project. Experimental and theoretical studies of impact ionization and avalanche ruggedness were also conducted. For the second thrust (the Foundry), the focus was primarily on 1.2-kV-class devices, although towards the end of the project outstanding results on 3.3-kV-class devices were also achieved. The aim of the Foundry was to develop a high-yield, reliable, and economic vertical GaN pn diode process. The Foundry conducted characterization of incoming epitaxial material and correlated this information with the yield and performance of fully processed devices. Wafer maps of diode characteristics such as forward and reverse current as well as capacitance-voltage curves were measured using auto-probing. Several mask sets comprising different-area devices as well as multiple edge termination designs (implanted junction termination extensions, guard rings, and combinations thereof) were studied, and machine-learning-based approaches were utilized to analyze the data. Packaging and reliability efforts were also undertaken for the Foundry diodes, which are necessary for a viable commercial process.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2021

Highly Integrated Wide Bandgap Power Module for Next Generation Plug-In Vehicles (Final Report)

Wide bandgap devices are key enablers for high power density traction inverters. A highly integrated wide bandgap (WBG) power module enables higher temperature operation, higher inverter efficiency and overall smaller die area with the same power delivery. However, it requires careful design of the power module to take advantage of all the superior material properties that silicon carbide (SiC) provides over conventional silicon (Si) Insulated Gate Bipolar Transistor (IGBT) based design. This project developed an efficient and densely packed SiC power module for an automotive traction inverter application. Extensive study was performed to select the best performing SiC die considering a wide range of temperature variation, suitability to integrate into target packaging, robust body diode performance and overall high electrical efficiency. Multiple design ideas were explored to achieve lower stray inductance for both power loop and signal loop, uniform current distribution, compact form factor, and very high thermal performance. The final power module package includes all six inverter switches in the same module (six-pack) with die sintered at both bottom and top surfaces utilizing high performance substrate to achieve high electrical and thermal performance. Two power module variants were developed using 900 V and 1200 V devices for operating at two different high voltage levels (> 600 V HV battery). Both power modules were comprehensively characterized, and high efficiency operation of the inverter was confirmed through analysis. Finally, a complete functional inverter was built with the 1200V power modules using other essential components (HV capacitors, gate driver board, controller board, current sensor, connectors etc.) and tested using GM’s standard test procedure. There are several challenges associated with adopting WBG devices for high voltage operation. In order to assess and mitigate those challenges, GM and subrecipients of this project have conducted multiple detailed studies. This includes phase current reconstruction using integrated Rogowski coil, device junction temperature estimation using on-state gate resistance, modeling and testing the effect of high voltage and fast switching on motor insulation and bearings, partial discharge inception voltage measurement under different environmental conditions. Findings of all these studies are summarized in this report.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2022

Dynamics of deuterium retention and desorption from plasma-facing materials in fusion reactor-relevant conditions

Hydrogen isotopes retention and desorption during and after discharges in fusion devices are still not well understood due to the complex device conditions and limitations of in-situ diagnostics and measurements. Here, we simulated well-diagnosed recent experiments at the DIII-D facility to benchmark our ITMC-DYN integrated package of modeling deuterium diffusion, retention, and desorption during and after D discharge irradiation. Modeling results were compared with detail experimental data of D desorption fluxes for various irradiation conditions. We predicted the temporal evolution of free and trapped D distribution in tungsten (W) plasma-facing material (PFM). Effects of key parameters namely diffusion coefficient, recombination rate, trapping energies against different defect types, were examined in these simulations. Existing experimental data of these parameters in literature varies significantly which makes it harder to identify key mechanisms and physics responsible for hydrogen isotope retention and desorption. The purpose of this work is to accurately simulate recent well-diagnosed reactor experiments given the uncertainties in such parameters and identify mechanisms responsible for the retention and desorption. We implemented the best identified diffusion, recombination, and trapping parameters in ITMC-DYN package that integrate both various collisional and thermal processes. We predicted, for example, that sample cooling between discharges in DIII-D operations can significantly affect the spatial distribution of trapped D in W under reactor irradiation conditions. Correct prediction of desorption spectra from samples irradiated during 10 DIII-D discharges showed that up to 35% of D can be retained in high binding energy defects such as vacancy clusters or voids.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2023

Low-loss adiabatic fiber-optic coupler for cryogenic photonics

Recent developments in quantum light–matter coupled systems and quantum transducers have highlighted the need for cryogenic optical measurements. In this study, we present a packaged fiber-optic coupler with a coupling efficiency of over 50% for telecom wavelength light down to the mK temperature range. Besides the high coupling efficiency, our method enables sensitive photonic device measurements that are immune to mechanical vibrations present in cryogenic setups.

Optics↗