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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Measurement of the production cross section of 31 GeV/ c protons on carbon via beam attenuation in a 90-cm-long target

The production cross section of 30.92 GeV/c protons on carbon is measured by the NA61/SHINE spectrometer at the CERN Super Proton Synchrotron by means of beam attenuation in a copy (replica) of the 90-cm-long target of the T2K neutrino oscillation experiment. The employed method for direct production cross-section estimation minimizes model corrections for elastic and quasielastic interactions. The obtained production cross section is $σ_{\text{prod}}$ = 227.6 ± 0.8(stat)$_{\text{-3.2}}^{\text{+1.9}}$(sys) – 0.8(mod) mb. It is in agreement with previous NA61/SHINE results obtained with a thin carbon target, while providing improved precision with a total fractional uncertainty of less than 2%. This direct measurement will reduce the uncertainty of the T2K neutrino flux prediction.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗
DOE OSTI2020

Imaging hole-density inhomogeneity in arsenic-doped CdTe thin films by scanning capacitance microscopy

We report nanometer-scale hole-density imaging in As-doped CdTe films by scanning capacitance microscopy (SCM). The hole-density profiling is validated by contrasting a CdTe cross-section sample made by molecular-beam epitaxy with systematically increased As doping in a staircase pattern over the range of 10 15 -10 18 /cm 3 within a single film. In polycrystalline films, the carrier distribution is significantly nonuniform, with inhomogeneity ranging from several hundred nm to several um and hole density varying by one order of magnitude (low 10^16 to low 10 17 /cm 3 ). This nonuniformity is distributed randomly, independent of the grain structure and grain boundaries (GBs). Kelvin probe force microscopy (KPFM) maps the surface potential and is correlated to cathodoluminescence (CL) and SCM by imaging over identical areas. Higher potential and lower CL intensity are found on GBs but not by SCM contrast; this indicates positive GB charging and recombination, but not GB-specific hole-density changes. The overall KPFM potential image is in rough agreement with the SCM carrier distribution and indicates band-edge potential fluctuations. Nonuniform carrier concentration, potential fluctuations, and defect recombination can all cause voltage and performance loss in As-doped CdTe solar technology.

14 SOLAR ENERGY↗
DOE OSTI2025

Advancing Cross-Sectional Scanning Electron Microscopy of Perovskite Solar Cells

Organic–inorganic perovskites are an emerging class of photovoltaic materials. Despite achieving power conversion efficiencies surpassing 26%, the challenge of perovskite stability including degradation during exposure to operational conditions such as light, heat, humidity, water, oxygen, and electric fields is well known. Related, perovskite instability has limited high-resolution electron imaging and characterization techniques that can be used for understanding degradation mechanisms. Furthermore, we demonstrate perovskite device cross-section preparation using mechanical polishing in a water-free environment with cryogenic Ar ion milling. Scanning electron microscopy was then used in both backscattered electron and secondary electron imaging modes to obtain information about layer structure, grain aggregate structure, and compositional heterogeneity. Monte Carlo CASINO simulations inform optimum beam conditions and image acquisition parameters and the effects of accelerating voltage, dwell times, and frame averaging for practical image acquisition are reported.

14 SOLAR ENERGY↗
DOE OSTI2023

Status report on emerging photovoltaics

This report provides a snapshot of emerging photovoltaic (PV) technologies. It consists of concise contributions from experts in a wide range of fields including silicon, thin film, III-V, perovskite, organic, and dye-sensitized PVs. Strategies for exceeding the detailed balance limit and for light managing are presented, followed by a section detailing key applications and commercialization pathways. A section on sustainability then discusses the need for minimization of the environmental footprint in PV manufacturing and recycling. The report concludes with a perspective based on broad survey questions presented to the contributing authors regarding the needs and future evolution of PV.

14 SOLAR ENERGY↗
DOE OSTI2022

Pulsed laser deposition and structural evolution of BaF 2 nanolayers in Eu-doped BaF 2 /Al 2 O 3 layered optical nanocomposite thin films

Here, we have developed a pulsed laser deposition (PLD) geometry for the growth of uniform BaF 2 nanoscale thin films, through control of the deposition conditions. Our goal is to use the BaF 2 layers with controllable structure as component layers in layered optical nanocomposites. The structure of the BaF 2 nanolayer evolves as a function of the layer thickness: BaF 2 grows via a layer-by-layer growth mode on Al 2 O 3 ; the layers are amorphous for a thickness < 3 nm, and then become nanocrystalline as the layer thickness increases. The BaF 2 nanocrystals have an FCC crystal structure with a weak < 111 > texture that becomes stronger for thicker films. We then demonstrate that our BaF2 films can be introduced into layered Al 2 O 3 /BaF 2 /EuO x nanocomposite films, which allows for control of the relative position of the Eu ions and the BaF 2 layer. Cross-section samples of the multilayered films show interfacial intermixing between the layers, which is related to implantation during the PLD process. This intermixing enables the incorporation of Eu ions into BaF 2 layers and form a thin Eu-doped BaF 2 nanolayer at the interface. The layered nanocomposite films show photoluminescence (PL) emission from Eu 3+ ions, and the PL intensity changes can be correlated with the crystallinity and crystal size changes in the BaF 2 layer. Our results provide guidance for achieving thin film nanocomposite materials with controllable structure and photoluminescence behavior for light emitting diodes, photovoltaics and other optical applications.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Tunable and efficient ultraviolet generation with periodically poled lithium niobate

On-chip ultraviolet (UV) sources are of great interest for building compact and scalable atomic clocks, quantum computers, and spectrometers. However, few material platforms are suitable for integrated UV light generation and manipulation. Of these materials, thin-film lithium niobate offers unique advantages such as sub-micron modal confinement, strong nonlinearity, and quasi-phase matching. Despite these characteristics, its utilization in the UV has remained elusive because of the substantial sensitivity of standard quasi-phase matching to fabrication imperfections, the photorefractive effect, and relatively large losses in this range. Here, we present efficient (197 ± 5%/W/cm 2 ) second harmonic generation of UV-A light in a periodically poled lithium niobate nanophotonic waveguide. We achieve on-chip UV powers of ~30 µW and linear wavelength tunability using temperature. These results are enabled with large cross section waveguides, which leads to first-order UV quasi-phase-matching with relatively long poling periods (>1.5 µm). By varying the poling period, we have achieved the shortest reported wavelength (355 nm) generated through frequency doubling in thin-film lithium niobate. Furthermore, our results open up new avenues for UV on-chip sources and chip-scale photonics through compact frequency-doubling of common near-IR laser diodes.

42 ENGINEERING↗
DOE OSTI2026

Superlattice reflection signatures of the insulator–metal transition in V 3 O 5 thin films

Nanoelectronic systems that are inspired by the brain are increasingly looking to insulator–metal transition (IMT) materials as they can mimic the response characteristics of neurons to temperature changes so that these can be used in robotic and computational applications. V 3 O 5 has an insulator–metal transition at ∼430 or ∼80 K higher than VO 2 and provides a unique high-temperature opportunity for these types of applications. Here, in this work, we track the structural evolution of V 3 O 5 thin films across the IMT through conventional selected-area electron diffraction (SAED) and four-dimensional scanning TEM (4D-STEM), correlated with temperature-dependent resistance measurements. SAED patterns show reversible evidence of superlattice reflections associated with the IMT—present below T IMT and absent above it—consistent with the accompanying drop in resistance. At room temperature, nanobeam electron diffraction patterns further reveal three local configurations: (i) type I regions with clean patterns lacking superlattice reflections and spot splitting; (ii) type II regions exhibiting rows of superlattice reflections and split spots indicative of crystallographic variants; and (iii) type III regions with negligible superlattice reflections but larger spot splitting suggestive of overlapping domains of insulating and conducting phases likely driven by local lattice distortions. Upon heating, the superlattice reflections disappear between 413 and 453 K, concurrent with the resistance drop at T IMT , consistent with the emergence of a conducting phase. The overall diffraction geometry remains essentially unchanged up to 573 K, implying that relative domain orientations persist through the transition. These observations reveal nanoscale structural heterogeneity in V 3 O 5 thin films across the IMT and inform operation in regimes where mixed-phase textures are expected. A plausible indexing framework rationalizing the observed geometries is presented in the Discussion section, alongside its limitations and alternative interpretations.

25 ENERGY STORAGE↗
DOE OSTI2022

Positron Sources for Future High Energy Physics Colliders

An unprecedented positron average current is required to fit the luminosity demands of future $e^+e^-$ high energy physics colliders. In addition, in order to access precision-frontier physics, these machines require positron polarization to enable exploring the polarization dependence in many HEP processes cross sections, reducing backgrounds and extending the reach of chiral physics studies beyond the standard model. The ILC has a mature plan for the polarized positron source based on conversion in a thin target of circularly polarized gammas generated by passing the main high energy e-beam in a long superconducting helical undulator. Compact colliders (CLIC, C3 and advanced accelerator-based concepts) adopt a simplified approach and currently do not plan to use polarized positrons in their baseline design, but could greatly benefit from the development of compact alternative solutions to polarized positron production. Increasing the positron current, the polarization purity and simplifying the engineering design are all opportunities where advances in accelerator technology have the potential to make a significant impact. This white-paper describes the current status of the field and provides R&D short-term and long-term pathways for polarized positron sources.

43 PARTICLE ACCELERATORS↗
DOE OSTI2023

Tuning the Curie temperature of a two-dimensional magnet/topological insulator heterostructure to above room temperature by epitaxial growth

Heterostructures of two-dimensional (2D) van der Waals (vdW) magnets and topological insulators (TI) are of substantial interest as candidate materials for efficient spin-torque switching, quantum anomalous Hall effect, and chiral spin textures. However, since many of the vdW magnets have Curie temperatures below room temperature, we want to understand how materials can be modified to stabilize their magnetic ordering to higher temperatures. In this work, we utilize molecular beam epitaxy to systematically tune the Curie temperature (T C ) in thin film Fe 3 GeTe 2 /Bi 2 Te 3 from bulklike values (~220 K) to above room temperature by increasing the growth temperature from 300°C to 375°C. For samples grown at 375°C, cross-sectional scanning transmission electron microscopy (STEM) reveals the spontaneous formation of different Fe m Ge n Te 2 compositions (e.g., Fe 5 Ge 2 Te 2 and Fe 7 Ge 6 Te 2 ) as well as intercalation in the vdW gaps, which are possible origins of the enhanced Curie temperature. Furthermore, this observation paves the way for developing various Fe m Ge n Te 2 /TI heterostructures with novel properties.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Morphological and chemical characteristics of oxide scales formed on δ-phase plutonium metal alloys II: 2.0 at% Ga

The focused ion-beam scanning electron microscopy (FIB-SEM) and three-dimensional (3D) microscopy were applied to characterize the subsurface morphological features of oxide scales formed on an ~2.0 at. % Ga plutonium (Pu) metal alloy. Using the FIB-SEM technique, a number of morphological features formed in the interior of the oxide scale from Pu metal’s environmental exposure were observed and identified. Auger electron spectroscopy (AES) was utilized to characterize the cross-sectional composition and chemistry of the oxide scale. The oxide scale formed during inert storage and operational environments was found to be highly variable in thickness and morphology, presenting some regions with a thin (<400 nm), dense oxide layer and others with a thick (>2 µm) scale with substantial lateral cracking. After subsequent exposure to dry air environment, the oxide scale became thicker (~4 µm) and slightly more porous. The changes following aging in a moist air environment were observed to be more severe, with the formation of a highly porous internal structure containing significant lateral and transverse cracking. In comparison to the scale formed on an ~3.5 at. % Ga-Pu metal alloy, the oxide morphology of the lower gallium alloy investigated here exhibited greater variation in thickness and a noteworthy dependence on the presence of water vapor, particularly in terms of the internal porosity formed during growth of the oxide.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Strain-rate dependent deformation mechanisms in single-layered Cu, Mo, and multilayer Cu/Mo thin films

Here, strain-rate sensitivity and rate-dependent hardness, over a range of 10 -2 to 10 2 s -1 , of sputter-deposited single-layered Cu, Mo, and 5 nm Cu/ 5 nm Mo, and 100 nm Cu/ 100 nm Mo multilayer films with a total film thickness of 5 μm were measured using nanoindentation. The plastic zone underneath the nanoindents was characterized via cross-sectional transmission electron microscopy (XTEM). The multilayer films exhibited enhanced hardness but slightly reduced strain-rate sensitivity with decreasing layer thickness from 100 nm to 5 nm. Only the 5 nm Cu/ 5 nm Mo multilayer film exhibited shear bands underneath the nanoindents, and the size of the shear bands increased with increasing strain rate. In contrast, the 100 nm Cu/ 100 nm Mo multilayer film exhibited material pile-up around the indents and significant nanotwinning within Cu grains. The effect of strain rate and layer thickness on the hardness and strain rate sensitivity of the multilayer thin films is interpreted using a modified confined layer slip (CLS) model. The reduced rate sensitivity at 5 nm as compared to 100 nm correlates with abundant growth nanotwins in the Cu grains in 100 nm and formation of shear bands in 5 nm multilayers. In single layer films, a substructure with a high density of dislocations was observed consistent with the plastic strain gradient in the indent plastic zone. No evidence of deformation twins was noted in any of the samples.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Perovskite Quantum Dot Solar Cells: Mapping Interfacial Energetics for Improving Charge Separation

Colloidal halide perovskite nanocrystals or quantum dots (QDs) show similar defect tolerance as thin film perovskite materials with added nanoscale phenomena. Perovskite QD solar cells have demonstrated efficiencies of 16.6%, greater than that of any other QD material system. While the efficiency lags behind the best thin-film perovskite devices, these solar cells could have advantages over the thin-film versions in terms of processability, phase stability, and high open-circuit voltages. However, some operating principles behind perovskite quantum dot device stacks and the associated electric field properties are still unknown. Here, we characterize the junction structure within perovskite QD solar cells, by exposing functioning cross-sections and using nanometer-scale Kelvin probe force microscopy to offer insight into the selection and performance of charge selective contacts. We also evaluated various solar cell device architectures with different selective contacts to isolate the role of each junction in device performance. We show that in high-performance n-i-p architectures, both electron- and hole-transport layer (HTL) interfaces possess a strong electric field, but in the case of the inverted p-i-n architecture, we find that high interfacial recombination at the HTL/QD junction is responsible for subpar device performance. Perovskite QD and thin film materials can synergistically be combined to offer more design flexibility in PV devices, and here we demonstrate that the interface between perovskite thin films and QDs are relatively benign and amenable for synergistic device design.

14 SOLAR ENERGY↗
DOE OSTI2021

Electrical conductivity of Sn at high pressure and temperature

To date, temperature and conductivity have many outstanding implications in extreme environments but are yet to be fully understood under high pressure and temperature dynamic conditions. Here, we introduce an approach to provide high quality electrical conductivity results under dynamic loading conditions. Emphasis is given to address the skin depth effect's influence in a dynamic loading experiment by using thin films. The thin film samples in this study were at least 100 times thinner than previous samples in dynamic electrical conductivity experiments, increasing the current density to its full potential across the sample's entire cross section. Consideration of the skin depth accounts for at minimum a 4× scaling factor to the final electrical conductivity result that has been neglected in previous dynamic electrical conductivity studies. We also obtained improved signal-to-noise ratio with custom diagnostics optimized for better electrical impedance matching. Furthermore, these considerations were applied to Sn to assess electrical conductivity at elevated pressure and temperature. The high signal-to-noise ratio with reduced skin depth influence results in Sn allowing observation of the conductivity changes related to solid-to-solid and solid-to-liquid phase transitions. Additionally, we calculate the Sn thermal conductivity using the Wiedemann-Franz law for our experiments and compare against thermal transport dependent temperature measurements from previous work.

36 MATERIALS SCIENCE↗
DOE OSTI2024

High acoustic velocity x -cut lithium niobate sub-terahertz electromechanics

Micromechanical resonators operating above 100 GHz are favorable candidates for quantum physics studies due to their stronger ability to withstand thermal fluctuations, allowing them to remain in the quantum ground state even at kelvin temperatures. Furthermore, electromechanical resonators at sub-terahertz frequencies enable high-speed data transfer in modern communication technologies, making them attractive for communication industries. Recently, sub-terahertz electromechanics has been demonstrated on z-cut thin-film lithium niobate. Yet, the x-cut thin-film lithium niobate is more advantageous for scaling above 100 GHz due to its faster acoustic velocity. Here, we report sub-terahertz electromechanics on x-cut thin-film lithium niobate utilizing the thickness-longitudinal mode. In addition, we study the orientation dependence of these mechanical resonators due to the anisotropy of lithium niobate. We find that devices with a cross section close to the xy plane can be more efficiently excited, in contrast to those near the xz plane. This difference stems from the orientation-dependent nature of the e12 piezoelectric coupling element of the x-cut lithium niobate film. This investigation could assist in optimizing resonator designs by choosing the crystallographic direction that offers the best performance for specific functionalities.

Physics↗
DOE OSTI2021

Evolution of Microstructure and Surface Characteristics of FeCrAl alloys when Subjected to Flow Boiling Testing

FeCrAl alloys are candidate materials for manufacturing accident-tolerant fuel (ATF) cladding intended for light water reactors to increase fuel reliability and safety during design-basis and beyond-design-basis accident scenarios. The evolution of the materials' surface characteristics, microstructure, and mechanical properties when exposed to the Critical Heat Flux (CHF) in flow boiling testing is crucial for safety analysis while providing insights into their thermal-hydraulic performance in nuclear reactors. After CHF, the surface chemistry of two FeCrAl alloys, APMT and C26M, was studied to understand their evolution at the early stage of high-temperature excursions in short time periods. The results indicated a thin layer composed of oxides and hydroxides of Al, Cr, and Fe with varying proportions at different depths in the layer, as indicated by X-ray photoelectron spectroscopy (XPS) and depth profiling. The cross-sections prepared by focused ion beam (FIB) revealed the growth of an oxide layer, in the range of 90-180 nm thick, on the alloys' surfaces. The evolution of the materials' surface chemistry also led to a noticeable post CHF excursion increase in their wettability, with a slight increase in roughness. Further, the investigation of the materials' mechanical properties indicated a modest increase in hardness by 10-15% as well as an increase in their yield strength, as evidenced by the microindentation and ring compression tests conducted before and after CHF testing. Scanning electron Microscopy (SEM) and X-ray diffraction (XRD) were used to investigate microstructural features of the materials and their changes after CHF treatment.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mixed halide bulk perovskite triplet sensitizers: Interplay between band alignment, mid-gap traps, and phonons

Photon upconversion, particularly via triplet-triplet annihilation (TTA), could prove beneficial in expanding the efficiencies and overall impacts of optoelectronic devices across a multitude of technologies. The recent development of bulk metal halide perovskites as triplet sensitizers is one potential step toward the industrialization of upconversion-enabled devices. In this work, we investigate the impact of varying additions of bromide into a lead iodide perovskite thin film on the TTA upconversion process in the annihilator molecule rubrene. We find an interplay between the bromide content and the overall device efficiency. In particular, a higher bromide content results in higher internal upconversion efficiencies, enabled by more efficient charge extraction at the interface, likely due to a more favorable band alignment. However, the external upconversion efficiency decreases, as the absorption cross section in the near infrared is reduced. The highest upconversion performance is found in our study for a bromide content of 5%. This result can be traced back to a high absorption cross section in the near infrared and higher photoluminescence quantum yield in comparison to the iodide-only perovskite, as well as an increased driving force for charge transfer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Growth of Nanometer-Thick γ-InSe on Si(111) 7 × 7 by Molecular Beam Epitaxy for Field-Effect Transistors and Optoelectronic Devices

γ-InSe is a semiconductor that holds promising potential in high-performance field-effect transistors and optoelectronic devices. Large-scale, single-phase γ-InSe deposition has proven challenging because of the difficulty in precise control of stoichiometry and the coexistence of different indium selenide phases. In this study, we demonstrate the wafer-scale combinatorial approach to map out the growth window as functions of the Se/In ratio and growth temperature for γ-InSe on the Si(111) 7 × 7 substrate in molecular beam epitaxy. X-ray diffraction (XRD) was used to identify the indium selenide phases, while atomic force microscopy revealed four distinct surface morphologies of γ-InSe, enabling a discussion of the growth mechanisms associated with each morphology. Cross-sectional atomic resolution scanning transmission electron microscopy confirmed that the film was of high crystalline quality and had nearly single-phase γ-InSe. In conclusion, our comprehensive study elucidates the In–Se phase map for thin film growth parameters, providing invaluable landmarks for the reproducible synthesis of high-quality γ-InSe layers.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Development of Multi-Filament Textured-Powder Bi-2212/Ag Wire With Enhanced Local Area Ratio

The performance and cost of Bi-2212/Ag wire is limited by the large fraction of Ag matrix (~3:1) that is required in the oxide-powder-in-tube fabrication process. An alternative fabrication process is being developed in which fine-powder Bi-2212 is uniaxially compressed to form bars with a thin Ag foil sheath. The fine powder naturally textures (aligns the a-b planes perpendicular to the direction of compaction) with texture >80% using 200 MPa compression. A billet is formed by stacking trapezoidal- cross-section bars in a symmetric 8-12-16 pattern around an Ag rod and enclosed in an Ag-wall extrusion can. Here, the billet is extruded and drawn to fine wire. Results are presented on present status of the development and testing.

17 WIND ENERGY↗