A phenomenon at the contacts of a sealed relay
Sealed relays for prevention of moisture condensation at contacts - electromagnetic switching relay
RELAY↗
SEARCH · Engineering Papers
Results for “Resistive switching”
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Parasitic suppressing circuit
A circuit for suppressing parasitic oscillations across an inductor operating in a resonant mode is described. The circuit includes a switch means and resistive means connected serially across the inductor. A unidirectional resistive-capacitive network is also connected across the inductor and to the switch means to automatically render the switch means conducting when inductive current through the inductor ceases to flow.
Fowler, J. T.↗
Multifunctional electrochemical memory stabilized by phase coexistence
Our growing computing needs, especially in applications that heavily rely on artificial intelligence (AI), motivate a search for new components that could substantially augment the performance of general-purpose digital computers. Beyond ON/OFF switching, new components with linear multistate analog resistive tuning, nonlinear volatile switching, spiking, oscillatory, stochastic and other complex functionalities could enable highly efficient neuromorphic computing schemes for AI information processing. Compared to the extreme multifunctionality of biological neurons, realizing all the above characteristics in a single, scalable analog component remains a grand challenge. Here we investigate electrochemical gating combined with localized thermal activation to program and switch a single, vertically integrated and dimensionally scaled electrothermal chemical random access memory (ETCRAM) with a channel and reservoir composed of phase-separated vanadium oxide. Closely related to electrochemical RAM (ECRAM), ETCRAM uses an integrated gate-heater electrode to overcome kinetic barriers that help retain states at ambient temperatures. In addition to synapse-like stable and programmable analog resistance states arising from redox-tunable phase coexistence, a single component exhibits neuron-like nonlinear conductance switching with a tunable threshold and self-driven dynamics owing to the thermally driven metal-insulator phase transition in vanadium dioxide. More broadly, we demonstrate that electrochemically stabilized phase coexistence could unlock analog electronics with novel functionality, stability, reconfigurability, and scalability.
Oh, Sangheon [Sandia National Lab. (SNL-CA), Liver↗
Nanoscale Probing of Electrical Memory Effects in van der Waals Layered PdSe 2
Tunable electronic materials that can be switched between different impedance states are fundamental to the hardware elements for neuromorphic computing architectures. This “brain-like” computing paradigm uses highly paralleled and colocated data processing, leading to greatly improved energy efficiency and performance compared to traditional architectures in which data have to be frequently transferred between processor and memory. In this work, we use scanning microwave impedance microscopy for nanoscale electrical and electronic characterization of two-dimensional layered semiconductor PdSe 2 to probe neuromorphic properties. The local resolution of tens of nanometers reveals significant differences in electronic behavior between and within PdSe 2 nanosheets (NSs). In particular, we detected both n-type and p-type behaviors, although previous reports only point to ambipolar n-type dominating characteristics. Nanoscale capacitance–voltage curves and subsequent calculation of characteristic maps revealed a hysteretic behavior originating from the creation and erasure of Se vacancies as well as the switching of defect charge states. In addition, stacks consisting of two NSs show enhanced resistive and capacitive switching, which is attributed to trapped charge carriers at the interfaces between the stacked NSs. Stacking n- and p-type NSs results in a combined behavior that allows one to tune electrical characteristics. In conclusion, as local inhomogeneities of electrical and electronic behavior can have a significant impact on the overall device performance, the demonstrated nanoscale characterization and analysis will be applicable to a wide range of semiconducting materials.
2D material↗
Local strain inhomogeneities during electrical triggering of a metal–insulator transition revealed by X-ray microscopy
Electrical triggering of a metal–insulator transition (MIT) often results in the formation of characteristic spatial patterns such as a metallic filament percolating through an insulating matrix or an insulating barrier splitting a conducting matrix. When MIT triggering is driven by electrothermal effects, the temperature of the filament or barrier can be substantially higher than the rest of the material. Using X-ray microdiffraction and dark-field X-ray microscopy, we show that electrothermal MIT triggering leads to the development of an inhomogeneous strain profile across the switching device, even when the material does not undergo a pronounced, discontinuous structural transition coinciding with the MIT. Diffraction measurements further reveal evidence of unique features associated with MIT triggering including lattice distortions, tilting, and twinning, which indicate structural nonuniformity of both low- and high-resistance regions inside the switching device. Such lattice deformations do not occur under equilibrium, zero-voltage conditions, highlighting the qualitative difference between states achieved through increasing temperature and applying voltage in nonlinear electrothermal materials. Electrically induced strain, lattice distortions, and twinning could have important contributions in the MIT triggering process and drive the material into nonequilibrium states, providing an unconventional pathway to explore the phase space in strongly correlated electronic systems.
42 ENGINEERING↗
Selective solid-state isolation of NMR circuit elements using back-to-back field effect transistors
Nuclear Magnetic Resonance (NMR) electronics that employ selective solid-state isolation of circuit elements can include solid-state switches, such as back-to-back Field Effect Transistor (FET) pairs, and isolated gate drive electronics adapted to operate the solid-state switches in order to selectively decouple induction coils from receive electronics. The solid-state switches can be placed in series to achieve higher standoff voltages, and can be configured for low on resistance and short switching times. The gate drive electronics can include electrical isolation components adapted to enhance standoff voltages and reduce electrical noise at the selectively isolated receive electronics.
Walsh, David O.↗
In situ Parallel Training of Analog Neural Network Using Electrochemical Random-Access Memory
In-memory computing based on non-volatile resistive memory can significantly improve the energy efficiency of artificial neural networks. However, accurate in situ training has been challenging due to the nonlinear and stochastic switching of the resistive memory elements. One promising analog memory is the electrochemical random-access memory (ECRAM), also known as the redox transistor. Its low write currents and linear switching properties across hundreds of analog states enable accurate and massively parallel updates of a full crossbar array, which yield rapid and energy-efficient training. While simulations predict that ECRAM based neural networks achieve high training accuracy at significantly higher energy efficiency than digital implementations, these predictions have not been experimentally achieved. In this work, we train a 3 × 3 array of ECRAM devices that learns to discriminate several elementary logic gates (AND, OR, NAND). We record the evolution of the network’s synaptic weights during parallel in situ (on-line) training, with outer product updates. Due to linear and reproducible device switching characteristics, our crossbar simulations not only accurately simulate the epochs to convergence, but also quantitatively capture the evolution of weights in individual devices. The implementation of the first in situ parallel training together with strong agreement with simulation results provides a significant advance toward developing ECRAM into larger crossbar arrays for artificial neural network accelerators, which could enable orders of magnitude improvements in energy efficiency of deep neural networks.
97 MATHEMATICS AND COMPUTING↗
Submicrosecond Power-Switching Test Circuit
A circuit that changes an electrical load in a switching time shorter than 0.3 microsecond has been devised. This circuit can be used in testing the regulation characteristics of power-supply circuits . especially switching power-converter circuits that are supposed to be able to provide acceptably high degrees of regulation in response to rapid load transients. The combination of this power-switching circuit and a known passive constant load could be an attractive alternative to a typical commercially available load-bank circuit that can be made to operate in nominal constant-voltage, constant-current, and constant-resistance modes. The switching provided by a typical commercial load-bank circuit in the constant-resistance mode is not fast enough for testing of regulation in response to load transients. Moreover, some test engineers do not trust the test results obtained when using commercial load-bank circuits because the dynamic responses of those circuits are, variously, partly unknown and/or excessively complex. In contrast, the combination of this circuit and a passive constant load offers both rapid switching and known (or at least better known) load dynamics. The power-switching circuit (see figure) includes a signal-input section, a wide-hysteresis Schmitt trigger that prevents false triggering in the event of switch-contact bounce, a dual-bipolar-transistor power stage that drives the gate of a metal oxide semiconductor field-effect transistor (MOSFET), and the MOSFET, which is the output device that performs the switching of the load. The MOSFET in the specific version of the circuit shown in the figure is rated to stand off a potential of 100 V in the "off" state and to pass a current of 20 A in the "on" state. The switching time of this circuit (the characteristic time of rise or fall of the potential at the drain of the MOSFET) is .300 ns. The circuit can accept any of three control inputs . which one depending on the test that one seeks to perform: a repetitive waveform from a signal generator, momentary closure of a push-button switch, or closure or opening of a manually operated on/off switch. In the case of a signal generator, one can adjust the frequency and duty cycle as needed to obtain the desired AC power-supply response, which one could display on an oscilloscope. Momentary switch closure could be useful for obtaining (and, if desired, displaying on an oscilloscope set to trigger on an event) the response of a power supply to a single load transient. The on/off switch can be used to switch between load states in which static-load regulation measurements are performed.
Folk, Eric N.↗
Two-Range Electrical Thermometer
Thermocouple and resistance thermometer expand thermometer scale. Switch thrown up to connect platinum resistance temperature detector or down to connect (platinum/rhodium)/platinum thermocouple to meter. Thermocouple integral part of platinum resistance temperature detector wiring.
Bridges, W. F.↗
Simple evaporation controller for thin-film deposition from a resistively heated boat
A simple, inexpensive circuit is described for switching the current through a resistively heated evaporation boat during thin-film deposition. The circuit uses a silicon-controlled rectifier (SCR) to switch the 0-15-A current in the primary of a 2-kV A step-down transformer that supplies the 0-200-A current to an evaporation boat. The circuit is controlled by a 0-10 V-dc signal similar to that furnished by an Inficon XTC deposition-rate controller. This circuit may be assembled from a handful of parts for a cost of about $400, nearly one-tenth the cost of similar commercial units. Minimum construction is required, since the circuit is built around an off-the-shelf, self-contained SCR unit.
Scofield, John H.↗
Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials
Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.
36 MATERIALS SCIENCE↗
Output Capacitance Loss of GaN HEMTs in Steady-State Switching
The output capacitance (C OSS ) loss, a loss produced when the device’s output capacitor is charged and discharged, has become a concern for GaN high electron mobility transistors (HEMTs) in high-frequency applications. This work presents a new, easy-to-implement method for the C OSS loss characterization based on the unclamped inductive switching (UIS) setup. As compared to prior approaches, this method involves the device’s ON-state conduction and could measure the C OSS loss in a single pulse and the steady-state switching. The C OSS loss of three types of mainstream commercial GaN HEMTs is characterized, which exhibit some common dependencies including a non-monotonic relation with the dv/dt (or resonance frequency), a linear relation with the ON-state current, a power-law relation with the peak blocking voltage, and little temperature dependence. In addition, their C OSS losses all show minimal distinctions in a single pulse and the steady-state switching, despite the increased on-resistance in the steady-state switching. Furthermore, this suggests that the traps accounting for the C OSS loss possess different de-trapping time constants as compared to the traps governing the dynamic on-resistance. Finally, a unified model is established to describe the C OSS loss of all three types of GaN HEMTs. These results provide important references for the high-frequency application of GaN HEMTs and new insights into the physical origin of their C OSS loss.1
42 ENGINEERING↗
Demonstration and characterization of insertable passive thermal switches for dynamic building envelopes
A dynamic building envelope integrated with thermal energy storage, such as phase change material (PCM), is an emerging technology that offers a promising solution to improve the energy efficiency of buildings. This study reports the development of insertable thermal switches, which modulate thermal resistance, thereby making building envelopes dynamic and enhancing the use of free ambient heating and cooling. The reported thermal switches are passive, meaning they work solely based on indoor and outdoor temperatures. A single switch when inserted into 10 × 10-in (0.064-m 2 ) XPS foam board insulation demonstrates effective thermal conductivity of 0.050 W/m-K in the resistive state and 0.285 W/m-K in the conductive state. Thermal switches exhibit an effective switching ratio of 5.7, with no noticeable degradation in performance over 770 cycles. Additionally, when integrated into a wall sample containing a PCM layer, switches significantly reduce the PCM solidification time by 43.2% during the cooling process.
32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
Switching charge states in quasi-2D molecular conductors
Abstract 2D molecular entities build next-generation electronic devices, where abundant elements of organic molecules are attractive due to the modern synthetic and stimuli control through chemical, conformational, and electronic modifications in electronics. Despite its promising potential, the insufficient control over charge states and electronic stabilities must be overcome in molecular electronic devices. Here, we show the reversible switching of modulated charge states in an exfoliatable 2D-layered molecular conductor based on bis(ethylenedithio)tetrathiafulvalene molecular dimers. The multiple stimuli application of cooling rate, current, voltage, and laser irradiation in a concurrent manner facilitates the controllable manipulation of charge crystal, glass, liquid, and metal phases. The four orders of magnitude switching of electric resistance are triggered by stimuli-responsive charge distribution among molecular dimers. The tunable charge transport in 2D molecular conductors reveals the kinetic process of charge configurations under stimuli, promising to add electric functions in molecular circuitry.
Huang, Yulong (ORCID:0000000296160134)↗
Transmission Electron Microscopy Study on the Effect of Thermal and Electrical Stimuli on Ge2Te3 Based Memristor Devices
Memristor devices fabricated using the chalcogenide Ge 2 Te 3 phase change thin films in a metal-insulator-metal structure are characterized using thermal and electrical stimuli in this study. Once the thermal and electrical stimuli are applied, cross-sectional transmission electron microscopy (TEM) and X-ray energy-dispersive spectroscopy (XEDS) analyses are performed to determine structural and compositional changes in the devices. Electrical measurements on these devices showed a need for increasing compliance current between cycles to initiate switching from low resistance state (LRS) to high resistance state (HRS). The measured resistance in HRS also exhibited a steady decrease with increase in the compliance current. High resolution TEM studies on devices in HRS showed the presence of residual crystalline phase at the top-electrode/dielectric interface, which may explain the observed dependence on compliance current. XEDS study revealed diffusion related processes at dielectric-electrode interface characterized, by the separation of Ge 2 Te 3 into Ge- and Te- enriched interfacial layers. This was also accompanied by spikes in O level at these regions. Furthermore, in-situ heating experiments on as-grown thin films revealed a deleterious effect of Ti adhesive layer, wherein the in-diffusion of Ti leads to further degradation of the dielectric layer. This experimental physics-based study shows that the large HRS/LRS ratio below the current compliance limit of 1 mA and the ability to control the HRS and LRS by varying the compliance current are attractive for memristor and neuromorphic computing applications.
Shallcross, Austin↗
Temperature-Controlling Circuit
Simple circuit switches current to electrical heater on and off to maintain temperature of room at 25 plus or minus 0.5 degree C. Lightweight, compact, reliable, insensitive to electrical noise, and uses single 5-Vdc power supply. Handles ac loads of 10 A. Designed to operate outside temperature controlled environment over range of -55 to +85 degree C. Thermistor provides input signal for simple temperature controller. Output of controller applied to solid-state relay, which in turn switches current to resistance heater.
Temple, Gerald↗
MEMS, Ka-Band Single-Pole Double-Throw (SPDT) Switch for Switched Line Phase Shifters
Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an insertion loss (IL), return loss (RL), and isolation of 0.3dB, 40dB, and 30 dB, respectively at Ka-band.
Scardelletti, Maximilian C.↗
Laminar wave train structure of collisionless magnetic slow shocks
The laminar wave train structure of collisionless magnetic slow shocks is investigated using two fluid hydromagnetics with ion cyclotron radius dispersion. For shock strengths less than the maximally strong switch-off shock, in the shock leading edge dispersive steepening forms a magnetic field gradient, while in the downstream flow dispersive propagation forms a trailing wave train; dispersion scale lengths are the ion inertial length if beta is smaller than 1 and the ion cyclotron radius if beta is greater than 1. In the switch-off slow shock leading edge, dispersion only produced rotations of the magnetic field direction; the gradient of the magnetic field magnitude, and hence the shock steepening length, is determined solely by resistive diffusion. The switch-off shock structure consists of a long trailing of magnetic rotations which are gradually damped by resistivity.
Coroniti, F. V.↗