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At least 163 records · Page 9

Diminishing sign anomaly and scaling behavior of the mixed-state Hall resistivity in Tl2Ba2Ca2Cu3O10 films containing columnar defects

The issues of sign reversal of the Hall voltage and scaling between longitudinal (rho(xx)) and Hall (rho(xy)) resistivities are studied in Tl2Ba2Ca2Cu3O10 films in which the vortex dynamics is drastically changed by flux pinning at heavy-ion-irradiation-induced linear defects. While the sign anomaly diminishes with increasing defect concentration, the power law rho(xy) is approximately equal to rho(xx) exp beta, beta = 1.85 +/- 0.1, holds even after irradiation. This result shows that the scaling is a universal feature of the mixed state in this system. The sign anomaly, on the other hand, is not consistent with a model that invokes pinning-induced backflow in the vortex core as the mechanism for this effect.

Budhani, R. C.↗

Cleanroom Microbes Survive Drying, Vacuum, and Proton Irradiation

Introduction : The goal of planetary protection at NASA is to mitigate the risk of contaminating sensitive target bodies with biological life. While many cleaning procedures have been put in place to reduce bioburden on spacecraft, microbes are experts at evolving to survive harsh conditions. Specifically, the dry, low-nutrient environment of a cleanroom (commonly used for assembly of spacecraft) can represent an environment where extremophiles can survive. Methods : Scientists at NASA MSFC wished to gather a snapshot of the microbial population within a variety of cleanrooms on site. A study was undertaken to collect air, surface, and floor samples from clean-rooms and isolate unique morphologies. From this study, 95 isolates were collected and saved in a microbial library. About 86% of these were identified at least to a genus level. Following identification, 24 microbes were selected, based on a literature review, as potential extremophiles. These were grown in liquid cultures, diluted to a set optical density, washed with water, and then applied to a sterilized Kapton coupon. Droplets were allowed to dry overnight in a biosafety cabinet. Coupons were then installed in a pelletron and pumped down to high vacuum (~1E-6 Torr). Samples were then subjected 100 keV protons at a fluence of 2x10 15 p+/cm 2 up to 4x10 15 p+/cm 2 . Following exposure, samples were returned to the microbiology lab where they were pro-cessed by submerging in water, vortexing, and then plating either droplets or spread plates. Recovery data collected was qualitative with a ranking or +, minor, or – for growth. Some selected radiotolerant strains were sequenced using the Illumina sequencing platform. The resulting genomes were annotated with the Rapid Annotations using Subsystems Technology (RAST) server and analyzed for conserved and unique stress response relevant genomic signatures to identify clues related to specific tolerances. Results and Discussion : After five rounds of proton radiation, we narrowed our isolates to five, non-spore forming bacteria that demonstrated survival: Arthrobacter koreensis, Paenarthrobacter nitroguajacolicus, Mycetocola manganoxydans , and an Erwinia sp. Furthermore, we exposed these four microbes to 254 nm wavelength light at an intensity of 80 W/m 2 at a distance of ~18 cm for 10 minutes. Only A. koreensis demonstrated survival following UV exposure. Finally, we performed whole genome sequencing on the four strains to look for genetic markers of stress resistance. When we compared the genomes of the four strains, we found that genes coding for GGDEF and EAL domains with PAS/PAC sensors were only found in A. koreensis . These domains, modulated by PAS/PAC sensors, are hypothesized to facilitate survival under drying, desiccation, and proton irradiation. Drying and Desiccation : PAS domains sense hydration changes and modulate GGDEF and EAL domain activity to adjust c-di-GMP levels, enhancing resistance to desiccation. For instance, in Pseudomonas aeruginosa , the PAS domain of RbdA modulates activity under varying hydration conditions, affecting stress responses [1]. Proton Irradiation : Proton irradiation causes oxidative stress, leading to ROS generation. PAS domains detect this stress and modulate GGDEF and EAL domains to manage oxidative stress responses. In Shewanella , EAL domain proteins modulated by PAS sensors help bacteria adapt to extreme conditions [2]. These genes upregulate other stress response genes, protecting membrane function, protein stability, DNA repair, and antioxidant defenses. The modulation of c-di-GMP by PAS domains is crucial for bacterial adaptation to stress conditions, enabling dynamic physio-logical adjustments [3]. Understanding these mechanisms provides insights into bacterial stress responses and strategies for controlling bacterial growth [4]. Conclusions : These findings indicate that clean-rooms harbor extremophile microbes that may be able to survive conditions in deep space. Furthermore, while we identified certain stress-response genes that may be at least partly responsible for the phenotypes observed in this study, there are likely unidentified genes or characteristics about A. koreensis , and other bacteria, that may allow them to survive in harsh environments. Future studies will focus on identifying these unknown genes and characteristics, further elucidating the mechanisms of extremophile survival and potentially informing the development of new biotechnologies for space exploration and other extreme environments.

Chelsi Cassilly↗

Research on radiation detectors, boiling transients, and organic lubricants

The accomplishments of a space projects research facility are presented. The subjects discussed are: (1) a study of radiation resistant semiconductor devices, (2) synthesis of high temperature organic lubricants, (3) departure from phase equilibrium during boiling transients, (4) effects of neutron irradiation on defect state in tungsten, and (5) determination of photon response function of NE-213 liquid scintillation detectors.

Source record↗

Electron and proton damage on InGaAs solar cells having an InP window layer

As part of a continuing program to determine the space radiation resistance of InP/ln(0.53)Ga(0.47)As tandem solar cells, n/p In(0.53)Ga(0. 47)As solar cells fabricated by RTI were irradiated with 1 MeV electrons and with 3 MeV protons. The cells were grown with a 3 micron n-lnP window layer to mimic the top cell in the tandem cell configuration for both AMO solar absorption and radiation effects. The results have been plotted against 'displacement damage dose' which is the product of the nonionizing energy loss (NIEL) and the particle fluence. A characteristic radiation damage curve can then be obtained for predicting the effect of all particles and energies. AMO, 1 sun solar illumination IV measurements were performed on the irradiated InGaAs solar cells and a characteristic radiation degradation curve was obtained using the solar cell conversion efficiency as the model parameter. Also presented are data comparing the radiation response of both n/p and p/n (fabricated by NREL) InGaAs solar cells as a function of base doping concentration. For the solar cell efficiency, the radiation degradation was found to be independent of the sample polarity for the same base doping concentration.

Messenger, Scott R.↗

Radiation effects in heteroepitaxial InP solar cells

Heteroepitaxial InP solar cells, with GaAs substrates, were irradiated by 0.5 and 3 MeV protons and their performance, temperature dependency, and carrier removal rates determined as a function of fluence. The radiation resistance of the present cells was significantly greater than that of non-heteroepitaxial InP cells at both proton energies. A clear difference in the temperature dependency of V(sub oc), was observed between heteroepitaxial and homoepitaxial InP cells. The analytically predicted dependence of dV(sub oc)/dT on Voc was confirmed by the fluence dependence of these quantities. Carrier removal was observed to increase with decreasing proton energy. The results obtained for performance and temperature dependency were attributed to the high dislocation densities present in the heteroepitaxial cells while the energy dependence of carrier removal was attributed to the energy dependence of proton range.

Weinberg, I.↗

Effect of thermal shock on fiber-reinforced superalloy composites

An evaluation is presented of the thermal shock behavior of tungsten fiber-reinforced superalloy (FRS) composites with respect to the turbine blade requirements of rocket engine turbopumps. Each composite was reinforced unidirectionally with 40-volume-pct continuous tungsten fibers. The start-up conditions of the first-stage turbine blades of the high-pressure fuel turbopump in the Space Shuttle Main Engine (SSME) were used to investigate the thermal shock behavior of these materials. The FRS composites showed excellent thermal shock resistance, two to nine times better than the turbine blade material used in the SSME. Thermal shock cycling produced microcracks on the surfaces of the irradiated area that were less than 0.13 mm long and 0.005 mm deep. Neither fiber/matrix debonding nor microvoiding was observed.

Yuen, J. L.↗

Neutron-transmutation-doped germanium bolometers

Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 10 to the 16th and 1.88 x 10 to the 18th per sq cm. After thermal annealing the resistivity was measured down to low temperatures (less than 4.2 K) and found to follow the relationship rho = rho sub 0 exp(Delta/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2 K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers.

Palaio, N. P.↗

Silicon solar cell development and radiation effects study for low temperature and low illumination intensity operation, volume 2

The results are presented of a study to determine the effect of in-situ proton irradiation upon low temperature, low intensity performance of several cell types. The cell types were selected in an attempt to distinguish variations in temperature-dependent radiation resistance which could be attributed to the n-p or p-n structure, diffused or implanted junctions, crucible grown or float-zone type base material, and high or low base resistivity. The results indicate that while expected variations of performance occur at room temperature, all cell types degrade more or less similarly at lower temperatures with normalized degradation becoming increasingly rapid as temperature is reduced. Recommendations for an optimized cell for Jupiter probe use are included along with a definition of the testing required on these cells to insure good performance characteristics.

Kirkpatrick, A. R.↗

Testing Conductive Films For Continuity

Apparatus tests thin conductive films for continuity without touching them. Specimen irradiated with 10-keV electrons; then noncontacting electrostatic probe scans specimen and measures charge on spot directly under it. Avoids damage to film and error from contact resistance resulting from touching film with conventional probe. Developed to determine integrity of conductive coats applied to surfaces of dielectric materials to inhibit accumulation of electrostatic charges.

Leung, Philip L.↗

Effects of radiation of InP cells epitaxially grown on Si and GaAs substrates

The properties of heteroepitaxial InP cells were determined both before and after 10-MeV proton irradiations. Numerical values, obtained for the diffusion and recombination components of the reverse saturation currents, were found to be consistent with the distribution of dislocations. The radiation resistance of the heteroepitaxial cells was significantly greater than that observed for n/p homoepitaxial InP cells. The carrier removal rate, obtained by C-V measurements, was 1800/cm for 10-MeV protons compared with 2.2/cm for 1-MeV electrons. The high carrier removal rate was found to have no significant effect on the cell's series resistance. It was concluded that the heteroepitaxial cell performance is dominated by the high dislocation density attributable to lattice constant mismatch. Although the efficiencies of the present cells are low, the recent achievement of 13.7 percent AM0 efficiencies using a GaAs substrate demonstrates the marked improvement that can be attained using more appropriate transition layers.

Weinberg, I.↗

UV testing of INTELSAT-7, 7A, and 8 solar cells

A 4000 hour experiment, conducted in late 1992 through mid 1993, confirmed earlier results on the ultraviolet damage effects in covered solar cells of various types being used, or proposed for use, in INTELSAT programs. Two different UV test systems were used to identify systematic errors and to study the effects of UV source-bulb age on degradation rate. After correction for contamination and UV source-bulb aging, the extrapolated degradation rates for irradiated and unirradiated INTELSAT-5, -6 single AR(SAR) coated cells and INTELSAT-7, -7A, -8 double layer AR(DAR) coated cells in both the 1993 tests confirm the following hypotheses resulting from the 1992 experiment. (a) Irradiated cells display significantly more UV degradation than do the unirradiated cells for tests exceeding 2000 hours. The new data indicates that degradation effects from electron irradiation are proportional to t(exp 2) (the square of the UV hours), at least for times less than or equal to 3000 hours. (b) This difference does not depend upon entire reflective coating, cell resistivity, or manufacturer within the sensitivity and reproducibility of the experiment. (c) There is a clear difference in degradation rate between single AR coated cells (TiO(x)) and double layer AR coated cells (SiO(x) and Al2O3?). At 100,000 hours (11.4 years) the DAR coated cells display more degradation than do the SAR coated cells, even though at 1,000 hours the DAR cells display less degradation. (d) UV degradation rates, to modern covered silicon solar cells, at the beginning of bulb life drop from approximately 2 times the average rate to near zero after 2000 hours (average end-of-life for the xenon short-arc lamps used in the tests). The effects of 1 MeV electron irradiation (10(exp 15) e(-)/sq cm) prior to UV exposure are clearly indicated in the plot of percent change in cell open circuit voltage (Voc) versus percent change in short circuit current (Isc) during the UV test and post-test cleanup of the cells. Clearly, extended UV testing produces a permanent photo-induced redegradation of previously irradiated cells. However, this photo-induced redegradation may be caused by the long-wavelength light, not the UV light.

Meulenberg, A.↗

The effect of electron irradiation on YBa2Cu3O(x) with gold bead contacts

The effect of 1-MeV electron irradiation, up to a total dose of 5.7 x 10 to the 17th electrons/sq cm at room temperature on YBa2Cu3O(x) was investigated using gold bead contacts made by the melting technique. The superconducting transition temperature Tc, the critical current density Jc at 77 K, the normal-state resistivity, and the contact resistance for gold bead contacts were measured as a function of fluence on the same samples without disturbing the contacts. Tc remained constant at 91 K, and Jc at 77 K remained constant around 90 A/sq cm. The normal-state resistivity increased systematically by about 15 percent for the total dose. Finally, the surface contact resistance at 77 K remained less than 4.2 microohm sq cm throughout the radiations. These studies took place over an 8-month period, and subsequent measurements indicate that the results are definitely due to radiation effects and not aging effects. It is concluded that the superconductor YBa2Cu3O(x) with gold bead contacts would perform well in a space environment of electron irradiation.

Caton, R.↗

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells

An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.

Mandelkorn, J.↗

Simplified fabrication of back surface electric field silicon cells and novel characteristics of such cells.

An investigation of the characteristics and behavior of 10 ohm-cm silicon cells having abnormally high open-circuit voltages was made. The cells studied were made by a new, highly simplified, contact fabrication process which creates both a contact and a thin electric field region at the cell back surface without the need for phosphorus layer removal. These cells had open-circuit voltages of about 0.58 V and their performance as a function of thickness, temperature, and 1 MeV electron irradiation is detailed. The study showed that 10 ohm-cm back-surface-field cells can have the high initial efficiencies and desirable temperature behavior of low resistivity cells. Thin back-surface-field cells were made and showed, in addition, much greater radiation damage resistance. A mechanism is proposed to explain the results.

Mandelkorn, J.↗

Process for crosslinking methylene-containing aromatic polymers with ionizing radiation

A process for crosslinking aromatic polymers containing radiation-sensitive methylene groups (-CH2-) by exposing the polymers to ionizing radiation thereby causing crosslinking of the polymers through the methylene groups is described. Crosslinked polymers are resistant to most organic solvents such as acetone, alcohols, hydrocarbons, methylene, chloride, chloroform, and other halogenated hydrocarbons, to common fuels and to hydraulic fluids in contrast to readily soluble uncrosslinked polymers. In addition, the degree of crosslinking of the polymers depends upon the percentage of the connecting groups which are methylene which ranges from 5 to 50 pct and preferably from 25 to 50 pct of the connecting groups, and is also controlled by the level of irradiation which ranges from 25 to 1000 Mrads and preferably from 25 to 250 Mrads. The temperature of the reaction conditions ranges from 25 to 200 C and preferably at or slightly above the glass transition temperature of the polymer. The crosslinked polymers are generally more resistant to degradation at elevated temperatures such as greater than 150 C, have a reduced tendency to creep under load, and show no significant embrittlement of parts fabricated from the polymers.

Bell, Vernon L.↗

Cross-Linking Aromatic Polymers With Ionizing Radiation

Resistance to heat and solvents increased. Certain aromatic polymers containing radiation-sensitive methylene groups cross-linked through methylene groups upon exposure to ionizing radiation. Cross-linked polymers resistant to most organic solvents and generally more resistant to high temperatures, with less tendency to creep under load. No significant embrittlement of parts fabricated from these polymers when degree of cross-linking, as controlled by irradiation dose, kept at moderate level.

Bell, Vernon L.↗

Structural materials for space applications

The long-term performance of structural materials in the space environment is a key research activity within NASA. The primary concerns for materials in low Earth orbit (LEO) are atomic oxygen erosion and space debris impact. Atomic oxygen studies have included both laboratory exposures in atomic oxygen facilities and flight exposures using the Shuttle. Characterization of atomic oxygen interaction with materials has included surface recession rates, residual mechanical properties, optical property measurements, and surface analyses to establish chemical changes. The Long Duration Exposure Facility (LDEF) is scheduled to be retrieved in 1989 and is expected to provide a wealth of data on atomic oxygen erosion in space. Hypervelocity impact studies have been conducted to establish damage mechanisms and changes in mechanical properties. Samples from LDEF will be analyzed to determine the severity of space debris impact on coatings, films, and composites. Spacecraft placed in geosynchronous Earth orbit (GEO) will be subjected to high doses of ionizing radiation which for long term exposures will exceed the damage threshold of many polymeric materials. Radiation interaction with polymers can result in chain scission and/or cross-linking. The formation of low molecular weight products in the epoxy plasticize the matrix at elevated temperatures and embrittle the matrix at low temperatures. This affects both the matrix-dominated mechanical properties and the dimensional stability of the composite. Embrittlement of the matrix at low temperatures results in enhanced matrix microcracking during thermal cycling. Matrix microcracking changes the coefficient of thermal expansion (CTE) of composite laminates and produces permanent length changes. Residual stress calculations were performed to estimate the conditions necessary for microcrack development in unirradiated and irradiated composites. The effects of UV and electron exposure on the optical properties of transparent polymer films were also examined to establish the optimum chemical structure for good radiation resistance. Thoughts on approaches to establishing accelerated testing procedures are discussed.

Tenney, Darrel R.↗

Mechanically stacked concentrator tandem solar cells

Four-terminal mechanically stacked solar cells were developed for advanced space arrays with line-focus reflective concentrators. The top cells are based on AlGaAs/GaAs multilayer heterostructures prepared by low temperature liquid phase epitaxy. The bottom cells are based on heteroepitaxial InP/InGaAs liquid phase epitaxy or on homo-junction GaSb, Zn-diffused structures. The sum of the highest reached efficiencies of the top and bottom cells is 29.4 percent. The best four-terminal tandems have an efficiency of 27 to 28 percent. Solar cells were irradiated with 1 MeV electrons and their performances were determined as a function of fluence up to 10(exp 16) cm(exp-2). It was shown that the radiation resistance of developed tandem cells is similar to the most radiative stable AlGaAs/GaAs cells with a thin p-GaAs photoactive layer.

Andreev, V. M.↗