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At least 163 records · Page 9

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DOE OSTI2021

Doped gate dielectric materials

A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.

Cao, Yu↗

DOE OSTI2022

Doped gate dielectrics materials

Cao, Yu↗

DOE OSTI2023

Efficient, direct compilation of SU(N) operations into SNAP & Displacement gates

We present a function which connects the parameter of a previously published short sequence of selective number-dependent arbitrary phase (SNAP) and displacement gates acting on a qudit encoded into the Fock states of a superconducting cavity, $V_k(\alpha)=D(\alpha)R_\pi(k)D(-2\alpha)R_\pi(k)D(\alpha)$ to the angle of the Givens rotation $G(\theta)$ on levels $|k\rangle,|k+1\rangle$ that sequence approximates, namely $\alpha=\Phi(\theta) = \frac{\theta}{4\sqrt{k+1}}$. Previous publications left the determination of an appropriate $\alpha$ to numerical optimization at compile time. The map $\Phi$ gives us the ability to compile directly any $d$-dimensional unitary into a sequence of SNAP and displacement gates in $O(d^3)$ complex floating point operations with low constant prefactor, avoiding the need for numerical optimization. Numerical studies demonstrate that the infidelity of the generated gate sequence $V_k$ per Givens rotation $G$ scales as approximately $O(\theta^6)$. We find numerically that the error on compiled circuits can be made arbitrarily small by breaking each rotation into $m$$\theta/m$ rotations, with the full $d\times d$ unitary infidelity scaling as approximately $O(m^{-4})$. This represents a significant reduction in the computational effort to compile qudit unitaries either to SNAP and displacement gates or to generate them via direct low-level pulse optimization via optimal control.

Job, Joshua↗

DOE OSTI2023

Gated truncated readout system

A gated truncated readout system for position sensitive or imaging detectors that improves resolution over traditional readout systems. The readout system includes two or more amplifiers that receive a multichannel output analog data from the detector. Analog gates control circuitry, included in the readout circuit, receives the signals from the amplifiers, determines a fractional value of the sum-integral of the signals, and enables analog gates operation around an area of interest, disabling all other channels where noise dominates the signal value and thereby improving interpolation accuracy of the signals centroid position and the detector resolution. Filtered signals are transmitted to a centroid interpolation signal processing device for computation of the centroid position. As a result disabling all channels where noise dominates the signal value, the gated truncated readout system provides better accuracy improved detector resolution.

Popov, Vladimir↗

DOE OSTI2024

Qudit Gate Decomposition Dependence for Lattice Gauge Theories

In this work, we investigate the effect of decomposition basis on primitive qudit gates on superconducting radio-frequency cavity-based quantum computers with applications to lattice gauge theory. Three approaches are tested: SNAP & Displacement gates, ECD & single-qubit rotations $R(\theta,\phi)$, and optimal pulse control. For all three decompositions, implementing the necessary sequence of rotations concurrently rather then sequentially can reduce the primitive gate run time. The number of blocks required for the faster ECD &$R_p(\theta)$ is found to scale $\mathcal{O}(d^2)$, while slower SNAP & Displacement set scales at worst $\mathcal{O}(d)$. For qudits with $d<10$, the resulting gate times for the decompositions is similar, but strongly-dependent on experimental design choices. Optimal control can outperforms both decompositions for small $d$ by a factor of 2-12 at the cost of higher classical resources. Lastly, we find that SNAP & Displacement are slightly more robust to a simplified noise model.

Kürkçüoglu, Doga Murat↗

DOE OSTI2023

NIR fluorescence lifetime macroscopic imaging with a novel time-gated SPAD camera

SwissSPAD3 is the latest of a family of widefield time-gated SPAD imagers developed for fluorescence lifetime imaging (FLI) applications. Its distinctive features are (i) the ability to define shorter gates than its predecessors (width W < 1 ns), (ii) support for laser repetition rates up to at least 80 MHz and (iii) a dual-gate architecture providing an effective duty cycle of 100%. We present widefield macroscopic FLI measurements of short lifetime NIR dyes, analyzed using the phasor approach. Furthermore, the results are compared with those previously obtained with SwissSPAD2 and to theoretical predictions.

47 OTHER INSTRUMENTATION↗

DOE OSTI2024

High Mobility, High Carrier Density SnSe 2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

2D and layered semiconductors are considered as promising electronic materials, particularly for applications that require high carrier mobility and efficient field-effect switching combined with mechanical flexibility. To date, however, the highest mobility has been realized primarily at low carrier concentration. Here, it is shown that few-layer/multilayer SnSe 2 gated by a solution top gate combines very high room-temperature electron mobility (up to 800 cm 2 V −1 s −1 ), along with large on-off current ratios (>10 5 ) and a subthreshold swing below the thermodynamic limit (50 mV per decade) in field-effect devices, at exceptionally large sheet carrier concentrations of ≈10 13 cm −2 . Observed mobility enhancements upon partial depletion of the channel point to near-surface defects or impurities as the mobility-limiting scattering centers. Under illumination, the resulting gap states give rise to gate-controlled switching between positive and negative photoconductance. The results qualify SnSe 2 as a promising layered semiconductor for flexible and wearable electronics, as well as for the realization of advanced approaches to photodetection.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Bayesian model updating with finite element vs surrogate models: Application to a miter gate structural system

Bayesian finite element (FE) model updating using direct model evaluations of large-scale high-fidelity FE models is extremely computationally expensive. Surrogate models can be used as fast emulators of FE models to accelerate the model calibration process. The physics/mechanics-based FE models are still the underpinning behind the surrogate models. Here, this paper evaluates the loss in accuracy and the gain in computational time while performing Bayesian model updating by using surrogate model evaluations compared to using direct FE model evaluations. This evaluation is crucial before entirely relying on surrogate models in model updating for structural health monitoring (SHM) and damage prognosis (DP) purposes. This paper also demonstrates Bayesian updating and surrogate model construction of large-scale high-fidelity FE models of infrastructure systems. In this regard, the miter gate structural system is considered as the testbed structure. Three predominant damage modes (loss of contact between gate and wall, loss of thickness due to corrosion, and loss of tension in the diagonal rods) are considered for model updating purposes. Bayesian model updating is performed using direct FE evaluations by leveraging parallel computing. Two types of surrogates, namely polynomial chaos expansion (PCE) and Gaussian process regression (GPR), are developed for the miter gate. Model updating is performed again using the trained surrogate models, and the updating results are compared with their counterparts obtained using the direct FE evaluation results. The posterior distribution of the FE model parameters obtained using the trained surrogates are sufficiently accurate with respect to the posterior obtained utilizing the direct FE evaluations. In addition, an approximate 4-fold decrease in the computational time was observed when using surrogate model evaluations instead of direct FE evaluations for model updating.

42 ENGINEERING↗

DOE OSTI2023

Automated integration gate selection for Gaussian mixture model pulse shape discrimination

Pulse shapes differ between neutron and gamma particles when measured with detector devices employing pulse shape discriminating (PSD) scintillators. Digitized waveforms can be used in detection systems to perform pulse shape discrimination for this application. Prior Gaussian Mixture Model (GMM) methods require access to the pulse full-waveform. Reducing the waveform to a smaller set of combined samples reduces computational cost while affecting PSD performance. In this work, we develop a method for selecting the best performing combination of integration gates, or contiguous summed segments of the digitized pulse for PSD. The method uses a discrimination score based on the GMM PSD approach. Furthermore, the final selection is performed using Bayesian Optimization. PSD detection results are compared with varying numbers of selected gates on time-of-flight (TOF) data. This method can be used to fully automate the selection of gates in an unsupervised (without ground truth labels) setting.

42 ENGINEERING↗

DOE OSTI2022

Graphene-Based Quantum Hall Interferometer with Self-Aligned Side Gates

The vanishing band gap of graphene has long presented challenges for fabricating high-quality quantum point contacts (QPCs)–the partially transparent p-n interfaces introduced by conventional split-gates tend to short the QPC. This complication has hindered the fabrication of graphene quantum Hall Fabry-P'erot interferometers, until recent advances have allowed split-gate QPCs to operate utilizing the highly resistive ν = 0 state. Here, we present a simple recipe to fabricate QPCs by etching a narrow trench in the graphene sheet to separate the conducting channel from self-aligned graphene side gates. Finally, we demonstrate operation of the individual QPCs in the quantum Hall regime, and further utilize these QPCs to create and study a quantum Hall interferometer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2022

Tunable quantum logic gate on photonic qubits with a ladder emitter

We describe how a ladder emitter can implement a tunable quantum logic gate on photonic qubits encoded in the frequency basis. The ground-to-first excited state of the ladder emitter interacts with the control photon, and the first-to-second excited state transition interacts with the target photon. By controlling the relative detuning between the target photon and the first-to-second excited state transition of the ladder emitter, we enable any controlled-phase operation from 0 to π. We derive analytical formulas for the performance of the gate through the S-matrix formalism as well as describe the mechanism intuitively. This gate is deterministic, does not utilize any active control, and needs only a single ladder emitter, enabling low-footprint and more efficient decomposition of quantum circuits, especially the quantum Fourier transform. We suggest multiple potential systems for physical realization of our proposal, such as lanthanide ions embedded in Purcell-enhanced cavities. We expect these results to motivate further interest in photonic quantum information processing with designer emitters.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2020

Symmetric Rydberg controlled- Z gates with adiabatic pulses

We analyze neutral atom Rydberg C Z gates based on adiabatic pulses applied symmetrically to both atoms. Analysis with smooth pulse shapes and Cs atom parameters predicts the gates can create Bell states with fidelity F > 0.999 using adiabatic rapid passage (ARP) pulses. With globally optimized adiabatic pulse shapes, in a two-photon excitation process, we generate Bell states with fidelity F = 0.997. The analysis fully accounts for spontaneous emission from intermediate and Rydberg states, including the Rydberg lifetime in a room temperature environment, but does not include errors arising from laser noise. In conclusion, the gate protocols do not require individual addressing and are shown to be robust against Doppler shifts due to atomic motion.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2022

Quantum state preparation by adiabatic evolution with custom gates

Quantum state preparation by adiabatic evolution is currently rendered ineffective by the long implementation times of the underlying quantum circuits, comparable to the decoherence time of present and near-term quantum devices. These implementation times can be significantly reduced by realizing these circuits with custom gates. Using classical computing, we model the output of a realistic two-qubit processor implementing the adiabatic evolution of a two-spin system by means of custom gates. This modeled output is then compared with the results of quantum simulations solving the same problem on IBM Quantum (IBMQ) systems. Additionally, when used to emulate the behavior of the IBMQ quantum circuit, our realistic model yields state fidelities ranging from 65% to 85%, similar to the actual performance of a diverse set of IBMQ devices. When we reduced the implementation time by using custom gates, however, the loss of fidelity was reduced by at least a factor of 4, allowing us to accurately extract the energy of the target state. This improvement is enough to render adiabatic evolution useful for quantum state preparation for small systems or as a preconditioner for other state preparation methods.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2024

Dynamics of qudit gates and effects of spectator modes on optimal control pulses

Qudit gates for high-dimensional quantum computing can be synthesized with high precision using numerical quantum optimal control techniques. Large circuits are broken down into modules and the tailored pulses for each module can be used as primitives for a qudit compiler. Application of the pulses of each module in the presence of extra modes may decrease their effectiveness due to crosstalk. In this paper, we address this problem by simulating qudit dynamics for circuit quantum electrodynamics systems. As a test case, we take pulses for single-qudit swap gates optimized in isolation and then apply them in the presence of spectator modes each of which are in Fock states. We provide an experimentally relevant scaling formula that can be used as a bound on the fidelity decay. Our results show that frequency shift from spectator mode populations has to be ≲ 0.1 % of the qudit's nonlinearity in order for high-fidelity single-qudit gates to be useful in the presence of occupied spectator modes.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2021

An overview of continuous and discrete phasor analysis of binned or time-gated periodic decays

Time-resolved analysis of periodically excited luminescence decays by the phasor method in the presence of time gating or binning is revisited. Analytical expressions for discrete configurations of square gates are derived and the locus of the phasors of such modified periodic single-exponential decays is compared to the canonical universal semicircle. The effects of IRF offset, decay truncation and gate shape are also discussed. Finally, modified expressions for the phase and modulus lifetimes are provided for some simple cases. A discussion of a modified phasor calibration approach is presented.

42 ENGINEERING↗

DOE OSTI2021

A Study of Integrated Signal and Power Transfer for Compact Isolated SiC MOSFET Gate-Drivers

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared.

42 ENGINEERING↗

DOE OSTI2021

Model correction and updating of a stochastic degradation model for failure prognostics of miter gates

Understanding the degradation of the quoin block is vital for failure prognostics in miter gates. Due to the complicated degradation mechanism, degradation models based on simplifications and assumptions cannot accurately describe the damage evolution. It is observed that small errors in a simplified degradation model can lead to a large discrepancy in the remaining useful life estimation attributed to error accumulation over time. Aiming to address this issue in failure prognostics, this paper presents a dynamic model correction framework for a simplified degradation model using strain measurements. In the proposed framework, a polynomial chaos expansion (PCE) model is employed to compensate the missing physics in a simplified stochastic degradation model. Here, a maximum likelihood estimation method is developed to estimate the uncertain parameters of the simplified physics-based degradation model along with the unknown PCE model parameters using strain measurements as the observables. The updated damage degradation model is then applied to failure prognostics of a miter gate. Results of a case study show that the proposed approach can effectively improve the accuracy of failure prognostics in miter gates.

42 ENGINEERING↗

DOE OSTI2023

Nonvolatile Memristive Effect in Few-Layer CrI 3 Driven by Electrostatic Gating

The potential of memristive devices for applications in nonvolatile memory and neuromorphic computing has sparked considerable interest, particularly in exploring memristive effects in two-dimensional (2D) magnetic materials. However, the progress in developing nonvolatile, magnetic field-free memristive devices using 2D magnets has been limited. In this work, we report an electrostatic-gating-induced nonvolatile memristive effect in CrI 3 -based tunnel junctions. The few-layer CrI 3 -based tunnel junction manifests notable hysteresis in its tunneling resistance as a function of gate voltage. We further engineered a nonvolatile memristor using the CrI 3 tunneling junction with low writing power and at zero magnetic field. We show that the hysteretic transport observed is not a result of trivial effects or inherent magnetic properties of CrI 3 . We propose a potential association between the memristive effect and the newly predicted ferroelectricity in CrI 3 via gating-induced Jahn–Teller distortion. Furthermore, our work illuminates the potential of 2D magnets in developing next-generation advanced computing technologies.

2D magnet↗