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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1987

Electro-optical characterization of the Tektronix TK512M-011 charge-coupled device

An electrooptical characterization encompassing linearity, blooming, dark-count rate, charge-transfer efficiency (CTE), and quantum efficiency, is presented for a front/side-illuminated CCD with 512x512 format and 27x27-micron pixels. The detailed noise characteristics of the CCD-output FET are reported. While very good low light level CTE is obtained in the parallel-shift direction, CTE problems arise in the serial direction. The output FET noise is equivalent to 5-12 electrons, depending on FET operating conditions and system bandwidth.

Epperson, Patrick M.↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗
NASA NTRS2013

Single-Event Effect Report for EPC Series eGaN FETs: EPC1001, EPC1010, EPC1014, EPC1012

Heavy ion testing of newly available GaN FETs from EPC were tested in March of 2012 at TAM. The EPC1010, EPC1001, EPC1012, and EPC1014 were tested for general radiation response from gold and xenon ions. Overall the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data. These devices were the first generation production of the device called Gen1. Gen2 parts are scheduled for later in the third quarter of FY2012

Scheick, Leif↗
NASA NTRS1987

Development of a P-I-N HgCdTe photomixer for laser heterodyne spectrometry

An improved HgCdTe photomixer technology was demonstrated employing a p-i-n photodiode structure. The i-region was near intrinsic n-type HgCdTe; the n-region was formed by B+ ion implantation; and the p-region was formed either by a shallow Au diffusion or by a Pt Schottky barrier. Experimental devices in a back-side illuminated mesa diode configuration were fabricated, tested, and delivered. The best photomixer was packaged in a 24-hour LN2 dewar along with a cooled GaAs FET preamplifier. Testing was performed by mixing black-body radiation with a CO2 laser beam and measuring the IF signal, noise, and signal-to-noise ratio in the GHz frequency range. Signal bandwidth for this photomixer was 1.3 GHz. The heterodyne NEP was 4.4 x 10 to the -20 W/Hz out to 1 GHz increasing to 8.6 x 10 to the -10 W/Hz at 2 GHz. Other photomixers delivered on this program had heterodyne NEPs at 1 GHz ranging from 8 x 10 to the -20 to 4.4 x 10 to the -19 W/Hz and NEP bandwidths from 2 to 4 GHz.

Bratt, Peter R.↗
NASA NTRS1987

Microwave performance of InAlAs/InGaAs/InP MODFET's

Modulation-doped InAlAs/InGaAs/InP structures were grown by molecular beam epitaxy and fabricated into FETs with excellent RF gain performance. The intrinsic transconductance was about 400 mS/mm at 300 K. Current gain cutoff frequencies of up to 26.5 GHz were obtained in 1-micron gate devices. Extremely small S12 and large S21 led to a very large F(max) of 62 GHz. These results represent the best reported figures for 1-micron devices in this material system, and slightly better than those obtained in recently developed pseudomorphic modulation-doped field effect transistors.

Peng, C. K.↗
NASA NTRS2014

Single-Event Effect Report for EPC Series eGaN FETs: EPC2015, EPC2014, EPC2012

Heavy ion testing of newly available eGaN FETs from EPC were tested in May of 2012 at TAM. The EPC2001, EPC2012, and EPC2014 were tested for general single-event effect response from gold and xenon ions. Overall, the devices showed radiation degradation commensurate with breakdown in isolation oxides, and similar testing by EPC and Microsemi agrees with these data.

Scheick, Leif↗
NASA NTRS1986

Ka-band monolithic gain control amplifier

A monolithic gain control amplifier for Ka-band has been developed based on 0.25 micron-gate-length dual-gate FETs fabricated on ion-implanted material. A single-stage monolithic amplifier gives a gain of 6 dB at 31 GHz including fixture losses with a gain control range of over 20 dB. The device and IC design and fabrication are described.

Geddes, J.↗
NASA NTRS1983

Operation of integrating indium antimonide linear arrays at 65 K and below

The combination of a FET switch non-CCD readout architecture with high-quality mesa-photovoltaic indium-antimonide detector material has led to high-performance integrating linear imagers in the 1- to 5-micron region. These devices operate in the temperature regime below 100 K and provide very good dark current and responsivity uniformity (+ or - 2 percent). Test data will show performance at 65 K for a 512-element array and 46 K for a 128-element array. Useful integration times of 3600 seconds at 46 K and greater than 12 seconds at 65 K have been achieved. For both devices, kTC read noise levels of less than 1200 electrons have been measured.

Bailey, G. C.↗
NASA NTRS1989

Hybrid Infrared Imager

Experimental device has low noise and high uniformity. Infrared imaging device combines array of InSb photodetectors with array of silicon field-effect-transistor switches. InSb chip forms roof over Si chip, each InSb detector cell engaging indium bump on corresponding Si switch cell below it. FET switches in 128-by-128 array turn on in sequence, read out charges on 128-by-128 array of photodetectors and multiplex them in serial output that represents pattern of light on array of photodetectors. Useful in sensitive infrared cameras for astronomy, medicine, inspection, and military surveillance. Reads out image data at rates up to 10 MHz and expands to 256-by-256 array.

Bailey, Gary C.↗
NASA NTRS2021

Single-Event Effect Testing of the ON Semiconductor BSS123 N-Channel Logic Level Enhancement Mode FET and the Vishay Si1013R P-Channel MOSFET

This study was undertaken to determine the single event effect (SEE) susceptibility of two different MOSFET components. Heavy-ion testing was conducted at the Lawrence Berkeley National Laboratory (LBNL) Berkeley Accelerator Space Effects (BASE) Facility 88” Cyclotron. Its purpose was to evaluate these devices as candidates for use on Goddard Modular SmallSat Architecture (GMSA) adapter board for the GTOSat project.

Michael J Campola↗
DOE OSTI2020

Detection of a multi–disease biomarker in saliva with graphene field effect transistors

Human carbonic anhydrase 1 (CA1) has been suggested as a biomarker for identification of several diseases including cancers, pancreatitis, diabetes, and Sjogren’s syndrome. However, the lack of a rapid, cheap, accurate, and easy-to-use quantification technique has prevented widespread utilization of CA1 for practical clinical applications. To this end, we present a label-free electronic biosensor for detection of CA1 utilizing highly sensitive graphene field effect transistors (G-FETs) as a transducer and specific RNA aptamers as a probe. The binding of CA1 with aptamers resulted in a positive shift in Dirac voltage V D of the G-FETs, the magnitude of which depended on target concentration. These aptameric G-FET biosensors showed the binding affinity (K D ) of ~2.3 ng/ml (70 pM), which is four orders lower than that reported using a gel shift assay. This lower value of K D enabled us to achieve a detection range (10 pg/ml - 100 ng/ml) which is well in line with the clinically relevant range. These highly sensitive devices allowed us to further prove their clinical relevance by successfully detecting the presence of CA1 in human saliva samples. In conclusion, the utilization of this label-free biosensor could facilitate the early stage identification of various diseases associated with changes in concentration of CAs.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
NASA NTRS1993

Complementary heterojunction FET technology for space application

A 32-bit serial integer multiplier was designed to investigate the yield and performance of complementary heterojunction FET (CHFET) technology. This is the largest reported CHFET logic circuit. The maximum operating frequency was 500 MHz. Very low power dissipation of 3 mW was obtained at 5 MHz operation. Single-event upset (SEU) characteristics of CHFET devices and latches were also measured and indicates the potential for SEU hard circuits for space and military applications.

Larue, George↗
DOE OSTI2021

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

Abstract Two-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi 2 Te 4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn -junction diodes and sub-3-nm pin -junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip - and nin -junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Chemistry↗
NASA NTRS1979

The 2.2 GHz Surface Acoustic Wave (SAW) oscillator development Ku-band frequency source development

Two 2.2 GHz SAW oscillators using aluminum nitride on sapphire (AlN/Al2O3) delay lines were fabricated. The oscillators were electronically temperature compensated and characterized. One of the oscillators was used as the frequency reference for the Ku band source; the second oscillator is available for continued evaluation. A 15 GHz frequency source was designed and fabricated. The 15 GHz source consists of a Ku band FET oscillator which is phase locked to the frequency multiplied (X7) output of the 2.2 GHz SAW reference source. The Ku band source was built using microstrip circuit designs, which are hybrid compatible. Two wafer runs of 2.2 GHz TED devices were fabricated and evaluated. The devices were mounted on microstrip test substrates and evaluated as 15 GHz divide by 7 circuits. The device evaluation indicated that in their present form the TED is not a practical circuit element.

Source record↗
DOE OSTI2025

Phase transition in two-dimensional monolayer (1L)-molybdenum disulfide induced by atomic S-basal plane gliding via synchrotron X-ray monochromatic beam radiation for superior electronic performance

Here, in this work, we report a novel approach to reduce the channel resistance by inducing a phase transition behavior from 2H to 1T in a monolayer MoS 2 (1L-MoS 2 ) by a synchrotron X-ray monochromatic beam (mono-beam) radiation. The effects of the biphase structure by the mono-beam on the 1L-MoS2 film were investigated using Raman spectra, photoluminescence (PL) spectra, scanning tunneling microscopy, and scanning tunneling spectroscopy, respectively. Through material characterization, we identified that the lateral sliding of S-vacancies along the S-plane in the 1L-MoS 2 is the key reason for the origin of unidirectional phase transition. The precise phase engineering triggered by the mono-beam radiation process allows the realization of field-effect transistors (FET) with 2X improvement in mobility toward a high on/off ratio (~10 8 ) and a near-ideal subthreshold swing of ~88 mV per decade. The validity of the phase engineering could be further extended for its application as a memory device, exhibiting a gate tunable conduction modulation behavior and a high resistance ratio of ~10 2 at a gate bias of 5 V with endurance of ~100 cycles. Furthermore, an artificial neural network using the synaptic weight update with accuracy of ~93 % was achieved.

36 MATERIALS SCIENCE↗
DOE OSTI2021

First demonstration of robust tri-gate β-Ga 2 O 3 nano-membrane field-effect transistors

Nano-membrane tri-gate β-gallium oxide (β-Ga 2 O 3 ) field-effect transistors (FETs) on SiO 2 /Si substrate fabricated via exfoliation have been demonstrated for the first time. By employing electron beam lithography, the minimum-sized features can be defined with the footprint channel width of 50 nm. For high-quality interface between β-Ga 2 O 3 and gate dielectric, atomic layer-deposited 15 nm thick aluminum oxide (Al 2 O 3 ) was utilized with tri-methyl-aluminum (TMA) self-cleaning surface treatment. The fabricated devices demonstrate extremely low subthreshold slope (SS) of 61 mV dec –1 , high drain current (I DS ) ON/OFF ratio of 1.5 × 10 9 , and negligible transfer characteristic hysteresis. Furthermore, we also experimentally demonstrated robustness of these devices with current–voltage (I–V) characteristics measured at temperatures up to 400 °C.

77 NANOSCIENCE AND NANOTECHNOLOGY↗