Hybrid Infrared Imager

Abstract

Experimental device has low noise and high uniformity. Infrared imaging device combines array of InSb photodetectors with array of silicon field-effect-transistor switches. InSb chip forms roof over Si chip, each InSb detector cell engaging indium bump on corresponding Si switch cell below it. FET switches in 128-by-128 array turn on in sequence, read out charges on 128-by-128 array of photodetectors and multiplex them in serial output that represents pattern of light on array of photodetectors. Useful in sensitive infrared cameras for astronomy, medicine, inspection, and military surveillance. Reads out image data at rates up to 10 MHz and expands to 256-by-256 array.