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At least 163 records · Page 9

Wheel-Based Ice Sensors for Road Vehicles

Wheel-based sensors for detection of ice on roads and approximate measurement of the thickness of the ice are under development. These sensors could be used to alert drivers to hazardous local icing conditions in real time. In addition, local ice-thickness measurements by these sensors could serve as guidance for the minimum amount of sand and salt required to be dispensed locally onto road surfaces to ensure safety, thereby helping road crews to utilize their total supplies of sand and salt more efficiently. Like some aircraft wing-surface ice sensors described in a number of previous NASA Tech Briefs articles, the wheelbased ice sensors are based, variously, on measurements of changes in capacitance and/or in radio-frequency impedance as affected by ice on surfaces. In the case of ice on road surfaces, the measurable changes in capacitance and/or impedance are attributable to differences among the electric permittivities of air, ice, water, concrete, and soil. In addition, a related phenomenon that can be useful for distinguishing between ice and water is a specific transition in the permittivity of ice at a temperature- dependent frequency. This feature also provides a continuous calibration of the sensor to allow for changing road conditions. Several configurations of wheel-based ice sensors are under consideration. For example, in a simple two-electrode capacitor configuration, one of the electrodes would be a circumferential electrode within a tire, and the ground would be used as the second electrode. Optionally, the steel belts that are already standard parts of many tires could be used as the circumferential electrodes. In another example (see figure), multiple electrodes would be embedded in rubber between the steel belt and the outer tire surface. These electrodes would be excited in alternating polarities at one or more suitable audio or radio frequencies to provide nearly continuous monitoring of the road surface under the tire. In still another example, one or more microwave stripline(s) or coplanar waveguide(s) would be embedded in a tire near its outer surface; in comparison with lower-frequency capacitive devices, a device of this type could be more sensitive.

Arndt, G. Dickey↗

Coupling Between Microstrip Lines and Finite Ground Coplanar Lines Embedded in Polyimide Layers for 3D-MMICs on Silicon

Three-dimensional circuits built upon multiple layers of polyimide are required for constructing Si/SiGe monolithic microwave/mm-wave integrated circuits on CMOS (low resistivity) Si wafers. It is expected that these circuits will replace the ones fabricated on GaAs and reduce the overall system cost. However, the closely spaced transmission lines that are required for a high-density circuit environment are susceptible to high levels of cross-coupling, which degrades the overall circuit performance. In this paper, theoretical and experimental results on coupling and ways to reduce it are presented for two types of transmission lines: a) the microstrip line and b) the Finite Ground Coplanar (FGC) line. For microstrip lines it is shown that a fence of metalized via-holes can significantly reduce coupling, especially in the case when both lines are on the same polyimide layer or when the shielding structure extends through several polyimide layers. For closely spaced microstrip lines, coupling is lower for a metal filled trench shield than a via-hole fence. Coupling amongst microstrip lines is dependent on the ratio of line separation to polyimide thickness and is primarily due to magnetic fields. For FGC lines it is shown that they have in general low coupling that can be reduced significantly when there is even a small gap between the ground planes of each line. FGC lines have approximately 8 dB lower coupling than coupled coplanar waveguides (CPW). In addition, forward and backward characteristics of the FGC lines do not resemble those of other transmission lines such as microstrip. Therefore, the coupling mechanism of the FGC lines is different compared to thin film microstrip lines.

Ponchak, G. E.↗

Planar Superconducting Millimeter-Wave/Terahertz Channelizing Filter

This innovation is a compact, superconducting, channelizing bandpass filter on a single-crystal (0.45 m thick) silicon substrate, which operates from 300 to 600 GHz. This device consists of four channels with center frequencies of 310, 380, 460, and 550 GHz, with approximately 50-GHz bandwidth per channel. The filter concept is inspired by the mammalian cochlea, which is a channelizing filter that covers three decades of bandwidth and 3,000 channels in a very small physical space. By using a simplified physical cochlear model, and its electrical analog of a channelizing filter covering multiple octaves bandwidth, a large number of output channels with high inter-channel isolation and high-order upper stopband response can be designed. A channelizing filter is a critical component used in spectrometer instruments that measure the intensity of light at various frequencies. This embodiment was designed for MicroSpec in order to increase the resolution of the instrument (with four channels, the resolution will be increased by a factor of four). MicroSpec is a revolutionary wafer-scale spectrometer that is intended for the SPICA (Space Infrared Telescope for Cosmology and Astrophysics) Mission. In addition to being a vital component of MicroSpec, the channelizing filter itself is a low-resolution spectrometer when integrated with only an antenna at its input, and a detector at each channel s output. During the design process for this filter, the available characteristic impedances, possible lumped element ranges, and fabrication tolerances were identified for design on a very thin silicon substrate. Iterations between full-wave and lumped-element circuit simulations were performed. Each channel s circuit was designed based on the availability of characteristic impedances and lumped element ranges. This design was based on a tabular type bandpass filter with no spurious harmonic response. Extensive electromagnetic modeling for each channel was performed. Four channels, with 50-GHz bandwidth, were designed, each using multiple transmission line media such as microstrip, coplanar waveguide, and quasi-lumped components on 0.45- m thick silicon. In the design process, modeling issues had to be overcome. Due to the extremely high frequencies, very thin Si substrate, and the superconducting metal layers, most commercially available software fails in various ways. These issues were mitigated by using alternative software that was capable of handling them at the expense of greater simulation time. The design of on-chip components for the filter characterization, such as a broadband antenna, Wilkinson power dividers, attenuators, detectors, and transitions has been completed.

Ehsan, Negar↗

A Tandem Coupler for Terahertz Integrated Circuits

A coplanar waveguide 3 dB quadrature coupler operating from 500 to 700 GHz is designed, fabricated and measured. On-wafer measurements demonstrate an amplitude balance of +/-2 dB and phase balance of +/-20 deg.

CPW↗

Effect of Parasitic Dielectric Resonators on CPW/Aperture-Coupled Dielectric Resonator Antennas

The effects of parasitic dielectric resonators on the HE (sub 11 sigma) and HE (High Efficiency) (sub 13 sigma) modes of a cylindrical dielectric resonator antenna (DRA) have been studied. The DRA was excited electromagnetically with a grounded coplanar waveguide through an aperture in the common ground plane. Strong couplings were observed for the HE (sub 11 sigma) mode with the parasitic element superimposed on the driven DRA, and for the HE (sub 13 sigma) mode with parasitic elements placed on both sides of the driven DRA. Results indicate significant enhancement in bandwidth for both modes, and good radiation patterns for the HE (sub 11 sigma) mode.

Simons, R. N.↗

Toward Large FOV High-Resolution X-Ray Imaging Spectrometer: Microwave Multiplexed Readout of 32 TES Microcalorimeters

We performed a small-scale demonstration at GSFC of high-resolution x-ray TES microcalorimeters read out using a microwave SQUID multiplexer. This work is part of our effort to develop detector and readout technologies for future space based x-ray instruments such as the microcalorimeter spectrometer envisaged for Lynx, a large mission concept under development for the Astro 2020 Decadal Survey. In this paper we describe our experiment, including details of a recently designed, microwave-optimized low-temperature setup that is thermally anchored to the 50 mK stage of our laboratory ADR. Using a ROACH2 FPGA at room temperature, we simultaneously read out 32 pixels of a GSFC-built detector array via a NIST-built multiplexer chip with Nb coplanar waveguide resonators coupled to RF SQUIDs. The resonators are spaced 6 MHz apart (at approx. 5.9 GHz) and have quality factors of approximately 15,000. Using flux-ramp modulation frequencies of 160 kHz we have achieved spectral resolutions of 3 eV FWHM on each pixel at 6 keV. We will present the measured system-level noise and maximum slew rates, and briefly describe the implications for future detector and readout design.

Yoon, Wonsik↗

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. 

superconductor↗

Toward Large Field-Of-View High-Resolution X-Ray Imaging Spectrometers: Microwave Multiplexed Readout of 28 TES Microcalorimeters

We performed small-scale demonstrations at GSFC of high-resolution Xray TES microcalorimeters read out using a microwave SQUID multiplexer. This work is part of our effort to develop detector and readout technologies for future space-based X-ray instruments such as the microcalorimeter spectrometer envisaged for Lynx, a large mission concept under development for the Astro 2020 Decadal Survey. In this paper we describe our experiment, including details of a recently designed, microwave-optimized low-temperature setup that is thermally anchored to the 55mKstage of our laboratory ADR. Using aROACH2 FPGA at room temperature, we read out pixels of a GSFC-built detector array via a NIST-built multiplexer chip with Nb coplanar waveguide resonators coupled to rf-SQUIDs. The resonators are spaced 6 MHz apart (at ∼ 5.9 GHz) and have quality factors of ∼ 15,000. In our initial demonstration, we used flux-ramp modulation frequencies of 125 kHz to read out 5 pixels simultaneously and achieved spectral resolutions of 2.8-3.1 eV FWHM at 5.9 keV. Our subsequent work is ongoing: to-date we have achieved a median spectral resolution of 3.4 eV FWHM at 5.9 keV while reading out 28 pixels simultaneously with flux-ramp frequencies of 160 kHz. We present the measured system-level noise and maximum slew rates and briefly describe our future development work.

Yoon, W.↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗

Low-Loss Thin-Film Al-On-Si Microwave Resonators for Astronomy Applications Designing and Characterizing the Next Generation of Microwave Detectors

We present measurements of prototype thin film Al microwave kinetic inductance detectors (MKIDs) intended for application in the sub-mm astronomy balloon experiment EXCLAIM. The device we show is dark, or non-optically coupled, and contains 16 coplanar waveguide (CPW) resonators etched into a 261 nm sputter deposited Al layer on a Si wafer. The resonators span the f0 = 3.5 - 4 GHz range, and include both lambda=2 and lambda=4 resonators. Each resonator is coupled to the feedline using one of three alternating coupling designs. We performed transmission line measurements of the device for a series of excitation powers ranging from -90 dBm to -30 dBm, and at a series of base temperatures ranging from 73 mK to 400 mK. We observed quality factors of up to Qi  107 at a base temperature of 73 mK. The lambda=2 and lambda=4 resonators performed similarly, achieving comparable Qi values. The results of these measurements are actively informing the fi nal design of the EXCLAIM instrument. EXCLAIM will incorporate six spectrometers, each containing an array of over 300 resonators in the 420-540 GHz range.

Carrie Volpert↗

A Dual Linear/Circular Polarized Wideband Flat Panel Phased Array Antenna for K/Ka-band 6U CubeSat Communications Applications

Circular polarized (CP) electromagnetic waves are preferred for space-to-space and space-to-ground satellite communications (SATCOM). CubeSats with 6U sizes (1U represents a 10 cm x 10 cm x 10 cm), that will rotate together with the Moon as it orbits Earth require high gain CP antenna systems to maintain reliable communication links. Here, we have designed an 8x8 dual linear and dual circularly polarized phased array antenna (PAA) aperture that offers 22-28 GHz bandwidth, with maximum gain of 23 dBic, and beam scanning capability of ±50o with acceptable axial ratio over all scan angles. A stacked patch topology is selected to achieve wide impedance bandwidth. Each driven patch has two via feed point locations that are connected to grounded coplanar waveguide (CPW) feed structures. By utilizing phase shifters from the Anokiwave RFICs (AWMF-0165) employed for the beamforming network (BFN), we have generated both dual linear polarization and dual circular polarization in each patch. Each driven and parasitic patch is innovatively shaped to achieve excellent isolation between two feed points which, in turn, leads to low cross polarization, high efficiency and good axial ratio over the entire bandwidth. Each chip has eight outputs which feed one 2x2 sub-array consisting of four dual linear or dual circularly polarized driven patches, simultaneously. Each 2x2 sub-array of the 8x8 array are sequentially rotated which improves axial ratio performance when the antenna operates in the dual circularly polarized mode. By utilizing a mirror effect, cross-polarized fields are also improved when operated in a dual linear polarized mode. The 8x8 array aperture is simulated taking into account the effect of the multilayer printed circuit board (PCB) stack-up of the BFN and co-simulated with the power splitter outputs and chip outputs and results are compared with only passive array performance. The performance of the antenna is still excellent when non-ideal chip performances are included in the simulation analysis. The fabricated array will be tested for radiation patterns in the Antenna and Microwave Laboratory (AML) of the San Diego State University and the NASA Glenn Research Center (GRC) spherical near field chambers. The design of the 8x8 antenna array with BFN layout is shown in Fig. 1.

5G↗

Kids Making Noise: Presenting Noise Spectra of Aluminum MKIDS for Astronomy

Since the field has identified microwave kinetic inductance detectors (MKIDs) as a competitive candidate for future applications in infrared and sub-millimeter wave detection, it is increasingly important to establish the materials and techniques that produce highly sensitive, well-understood, and consistent detectors. We present new noise power spectral density (PSD) measurements for several thin film (25nm) aluminum coplanar waveguide (CPW) microwave resonators. We include noise PSD measurements for several bath temperatures and photon occupation numbers. We examine the trends exhibited by the fractional frequency noise spectra of our detectors at 1 kHz as a function of bath temperature and power. For our lowest temperature data (58mK) and a readout power of -84 dBm we observe fractional frequency noise in the range Sбf / f r 2 = a few x10 -17 . We observe a roughly Sбf / f r 2 (1 kHz) ∝ Pint -0.5 relationship between internal power and fractional frequency noise at 1 kHz. We attempted more complex fits to the PSDs, but concluded that more measurements are needed to converge on meaningful fits to the data.

MKIDs↗

Novel Coplanar Stripline to Slotline Transition on High Resistivity Silicon

A novel coplanar stripline (CPS) to slotline transition has been fabricated and characterized on a high resistivity silicon wafer. The CPS and the slotline are on opposite sides of the wafer and are coupled electromagnetically. The coupling takes place at the location were the CPS is terminated in a right angles. The measured average insertion loss and return loss per transition are better than 1.5 and 10 dB, respectively, with a bandwidth greater than 30% at 9.5 GHz.

TRT-EXPERIMENTAL↗

Traveling-Wave Membrane Photomixers

Traveling-wave photomixers have superior performance when compared with lumped area photomixers in the 1 to 3 THz frequency range. Their large active area and distributed gain mechanism assure high thermal damage threshold and elimination of the capacitive frequency roll-off. However, the losses experienced by the radio frequency wave traveling along the coplanar strips waveguide (due to underlying semi-infinite GaAs substrate) were a serious drawback. In this paper we present device designs and an experimental setup that make possible the realization of photomixers on membranes which eliminate the losses.

Wyss, R. A.↗

A 90 GHz Amplifier Assembled Using Flip-Chip Technology

This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.

FET amplifiers Millimeter wave FETs bump-bonding m↗

Medium power amplifiers covering 90 - 130 GHz for telescope local oscillators

This paper describes a set of power amplifier (PA) modules containing InP High Electron Mobility Transistor (HEMT) Monolithic Millimeter-wave Integrated Circuit (MMIC) chips. The chips were designed and optimized for local oscillator sources in the 90-130 GHz band for the Atacama Large Millimeter Array telescope. The modules feature 20-45 mW of output power, to date the highest power from solid state HEMT MMIC modules above 110 GHz.

coplanar waveguides↗