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At least 163 records · Page 9

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NASA NTRS1997

High Frequency Interconnects on Silicon Substrates

The measured propagation constant of coplanar waveguide (CPW) on silicon wafers as a function of the line dimensions and the resistivity of the Si wafer; CPW on GaAs wafers as a function of the line dimensions, and thin film microstrip (TFMS) polyimide fabricated with polyimide on the surface of a silicon wafer is presented. It is shown that the attenuation of CPW on 2500 Omega-cm Si wafers and-of TFMS with a polyimide thickness of 4 micrometer or greater is comparable to the attenuation of similar lines on GaAs.

Ponchak, George E.↗

NASA NTRS2001

Comparison of the Experimental Performance of Ferroelectric CPW Circuits with Method of Moment Simulations and Conformal Mapping

Experimental measurements of coplanar waveguide (CPW) circuits atop thin films of ferroelectric Ba(x)Sr(1-x)TiO3 (BST) were made as a function bias from 0 to 200 V and frequency from 0.045 to 20 GHz. The resulting phase shifts are compared with method of moments electromagnetic simulations and a conformal mapping analysis to determine the dielectric constant of the BST films. Based on the correlation between the experimental and the modeled data, an analysis of the extent to which the electromagnetic simulators provide reliable values for the dielectric constant of the ferroelectric in these structures has been performed. In addition, to determine how well the modeled data compare with experimental data, the dielectric constant values were also compared to low frequency measurements of interdigitated capacitor circuits on the same films. Results of these comparisons will be presented.

VanKeuls, Fred W.↗

NASA NTRS2002

MEMS, Ka-Band Single-Pole Double-Throw (SPDT) Switch for Switched Line Phase Shifters

Ka-band MEMS doubly anchored cantilever beam capacitive shunt devices are used to demonstrate a MEMS SPDT switch fabricated on high resistivity silicon (HRS) utilizing finite ground coplanar waveguide (FGC) transmission lines. The SPDT switch has an insertion loss (IL), return loss (RL), and isolation of 0.3dB, 40dB, and 30 dB, respectively at Ka-band.

Scardelletti, Maximilian C.↗

NASA NTRS2004

Project: Micromachined High-Frequency Circuits For Sub-mm-wave Sensors

A novel micromachined resonator at 45 GHz based on a defect in a periodic electromagnetic bandgap structure (EBG) and a two-pole Tchebysbev filter with 1.4% 0.15 dB equiripple bandwidth and 2.3 dB loss employing this resonator are presented in this letter. The periodic bandgap structure is realized on a 400 micron thick high-resistivity silicon wafer using deep reactive ion etching techniques. The resonator and filter can be accessed via coplanar waveguide feeds.

Papapolymerou, Ioannis John↗

NASA NTRS2004

Excitation of Coupled Slotline Mode in Finite Ground CPW with Unequal Ground Plane Widths

The coupling between the desired CPW mode and the unwanted coupled slotline mode is presented for finite ground coplanar waveguides with unequal ground plane widths. Measurements, quasi-static conformal mapping, and Finite-Difference Time-Domain analysis are performed to determine the dependence of the slotline mode excitation on the physical dimensions of the FGC line and on the frequency range of operation. It is shown that the ratio of the slotline mode to the CPW mode can be as high as 18 dB. The use of airbridges is shown to reduce the slotline mode by 15 dB, but that the slotline mode fully reestablishes itself after 2000 microns. Furthermore, these results are independent of frequency.

Ponchak, George E.↗

NASA NTRS2002

Low-Loss, High-Isolation Microwave Microelectromechanical Systems (MEMS) Switches Being Developed

Switches, electrical components that either permit or prevent the flow of electricity, are the most important and widely used electrical devices in integrated circuits. In microwave systems, switches are required for switching between the transmitter and receiver; in communication systems, they are needed for phase shifters in phased-array antennas, for radar and communication systems, and for the new class of digital or software definable radios. Ideally, switches would be lossless devices that did not depend on the electrical signal's frequency or power, and they would not consume electrical power to change from OFF to ON or to maintain one of these two states. Reality is quite different, especially at microwave frequencies. Typical switches in microwave integrated circuits are pin diodes or gallium arsenide (GaAs) field-effect transistors that are nonlinear, with characteristics that depend on the power of the signal. In addition, they are frequency-dependent, lossy, and require electrical power to maintain a certain state. A new type of component has been developed that overcomes most of these technical difficulties. Microelectromechanical (MEMS) switches rely on mechanical movement as a response to an applied electrical force to either transmit or reflect electrical signal power. The NASA Glenn Research Center has been actively developing MEMS for microwave applications for over the last 5 years. Complete fabrication procedures have been developed so that the moving parts of the switch can be released with near 100-percent yield. Moreover, the switches fabricated at Glenn have demonstrated state-of-the-art performance. A typical MEMS switch is shown. The switch extends over the signal and ground lines of a finite ground coplanar waveguide, a commonly used microwave transmission line. In the state shown, the switch is in the UP state and all the microwave power traveling along the transmission line proceeds unimpeded. When a potential difference is applied between the cantilever and the transmission line, the cantilever is pulled downward until it connects the signal line to the ground planes, creating a short circuit. In this state, all the microwave power is reflected. The graph shows the measured performance of the switch, which has less than 0.1 dB of insertion loss and greater than 30dB of isolation. These switches consume negligible electrical power and are extremely linear. Additional research is required to address reliability and to increase the switching speed.

Ponchak, George E.↗

NASA NTRS2000

Radio Frequency (RF) Micro-Electromechanical Systems (MEMS) Switches for Space Communications

Micro-electromechanical systems (MEMS) is an emerging technology for radio frequency (RF) systems because it has the potential to dramatically decrease loss and improve efficiency. In this paper, we address the design and fabrication of novel MEMS switches being developed at NASA Glenn Research Center. Two types of switches are being developed: a microstrip series single pole single throw (SPST) switch and a coplanar waveguide (CPW) series SPST and single pole double throw (SPDT) switches. These are being fabricated as an integral part of 50 Ohm microstrip and CPW RF integrated circuits using microfabrication techniques. The construction of the switch relies on a cantilever beam that is partially supported by a dielectric post. The cantilever beam is electro-magnetically actuated. To decrease stiction, a Si3N4 thin film is deposited over the contact area. Thus, when the switch is closed, the ON-state insertion loss is governed by the parallel plate capacitance formed by the two contacts. The isolation in the OFF-state is governed by the parasitic capacitance when the cantilever is in the up position. RF MEMS switches have been demonstrated with 80% lower insertion loss than conventional solid state devices (GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and Silicon PIN diodes) based switches. For example, a conventional GaAs five-bit phase shifter which is required for beam steering in a phased array antenna has approximately 7 dB of insertion loss at 26.5 GHz where as a comparable MEMS based phase shifter is expected to have only 2 dB of insertion loss. This translates into 56% lower power dissipation and therefore decreases the thermal load on the spacecraft and also reduces the power amplifier requirements. These benefits will enable NASA to build the next generation of deep space science crafts and micro/nano satellites.

Simons, Rainee N.↗

NASA NTRS1997

W-Band On-Wafer Measurement of Uniplanar Slot-Type Antennas

Uniplanar slot-type antennas such as coplanar waveguide fed single- and dual-polarized slot-ring antennas and double folded-slot antennas are characterized using a millimeter-wave network analyzer and on-wafer measurement techniques. The antennas are designed to be mounted on a dielectric lens to minimize power loss into substrate modes and realize high-gain antenna patterns. On-wafer measurements are performed by placing the antenna wafer on a thick dielectric spacer of similar e(sub t) and eliminating the reflection from the probe station chuck with time-domain gating. The measured results agree well with method-of-moments simulations.

Raman, Sanjay↗

NASA NTRS2006

Sensor And Method For Detecting A Superstrate

Method and apparatus are provided for determining a superstrate on or near a sensor, e.g., for detecting the presence of an ice superstrate on an airplane wing or a road. In one preferred embodiment, multiple measurement cells are disposed along a transmission line. While the present invention is operable with different types of transmission lines, construction details for a presently preferred coplanar waveguide and a microstrip waveguide are disclosed. A computer simulation is provided as part of the invention for predicting results of a simulated superstrate detector system. The measurement cells may be physically partitioned, nonphysically partitioned with software or firmware, or include a combination of different types of partitions. In one embodiment, a plurality of transmission lines are utilized wherein each transmission line includes a plurality of measurement cells. The plurality of transmission lines may be multiplexed with the signal from each transmission line being applied to the same phase detector. In one embodiment, an inverse problem method is applied to determine the superstrate dielectric for a transmission line with multiple measurement cells.

Arndt, G. Dickey↗

NASA NTRS2002

Improved equivalent circuit for twin slot terahertz receivers

Series-fed coplanar waveguide embedding circuits are being developed for terahertz mixers using, in particular, submicron-sized superconducting devices, such as hot electron bolometers as the nonlinear element. Although these mixers show promising performance, they usually also show a considerable downward shift in the center frequency, when compared with simulations obtained by using simplified models. This makes it very difficult to design low-noise mixers for a given THz frequency. This shiftis principally caused by parasitics due to the extremely small details (in terms of wavelength) of the device, and by the electrical properties of the RF choke filter in the DC/IF line. In this paper, we present an improved equivalent network model of such mixer circuits which agrees with measured results at THz frequencies and we propose a new set of THz bolometric mixers that have been fabricated and are currently being tested.

HEB slot antennas CPW↗

NASA NTRS1995

High Power Photodetectors for Space Communications Applications

High power photodetectors in coplanar waveguide and distributed traveling-wave structures have been under development for communications applications. The distributed photodetectors demonstrated 70percent efficiency with a linear response up to 25 mW of optical power input.

High Power Photodetectors↗

NASA NTRS2007

High-Temperature Characterization of Alumina Substrates and Folded Slot Antenna

The characterization of 99.6% polycrystalline alumina substrates and folded slot antennas is presented in this paper. Coplanar Waveguide (CPW) calibration standards where fabricated on 99.6% polycrystalline alumina substrates. Thru-Reflect-Line (TRL) calibrations were performed at temperatures of 25 to 400 C over a frequency range from 0.5 to 50 GHz. The effective dielectric constant of the alumina substrates was determined to be relatively constant at 5.4 from 25 to 200 C and then increased steadily to approximately 6 at 400 C. The loss of the CPW lines increased as temperature and frequency increased as well noting that the increase in loss is even more profound as both the temperature and frequency increased simultaneously. A CPW fed folded slot antenna fabricated on the alumina substrates is also presented. The Return Loss (RL) of a CPW fed folded slot antenna exhibits a self impedance matching technique. The RL of the folded slot antenna at 25 C displays a resonance at 3.5 GHz and is approximately 16 dB in magnitude. At 300 C the resonance shifts down in frequency to approximately 3.3 dB and has roughly the same magnitude. However the loss of the antenna response also increases at this elevated temperature. This work is part of the initial stages of an effort at NASA Glenn research Center to develop wireless sensors for harsh environments. This work can reduce cost, space to house all the hard wired connections, and reduce the weight of the overall units such as aerospace engines and allow for the placement of the wireless sensors in the engine which are not possible with hard wired sensors.

Scardelletti, Maximilian C.↗

NASA NTRS2007

Electrically Small Folded Slot Antenna Utilizing Capacitive Loaded Slot Lines

This paper presents an electrically small, coplanar waveguide fed, folded slot antenna that uses capacitive loading. Several antennas are fabricated with and without capacitive loading to demonstrate the ability of this design approach to reduce the resonant frequency of the antenna, which is analogous to reducing the antenna size. The antennas are fabricated on Cu-clad Rogers Duriod(TM) 6006 with multilayer chip capacitors to load the antennas. Simulated and measured results show close agreement, thus, validating the approach. The electrically small antennas have a measured return loss greater than 15 dB and a gain of 5.4, 5.6, and 2.7 dBi at 4.3, 3.95, and 3.65 GHz, respectively.

Scardelletti, Maximilian C.↗

NASA NTRS2009

100-GHz Phase Switch/Mixer Containing a Slot-Line Transition

A circuit that can function as a phase switch, frequency mixer, or frequency multiplier operates over a broad frequency range in the vicinity of 100 GHz. Among the most notable features of this circuit is a grounded uniplanar transition (in effect, a balun) between a slot line and one of two coplanar waveguides (CPWs). The design of this circuit is well suited to integration of the circuit into a microwave monolithic integrated circuit (MMIC) package. One CPW is located at the input end and one at the output end of the top side of a substrate on which the circuit is fabricated (see Figure 1). The input CPW feeds the input signal to antiparallel flip-chip Schottky diodes connected to the edges of the slot line. Phase switching is effected by the combination of (1) the abrupt transition from the input CPW to the slot line and (2) CPW ground tuning effected by switching of the bias on the diodes. Grounding of the slot metal to the bottom metal gives rise to a frequency cutoff in the slot. This cutoff is valuable for separating different frequency components when the circuit is used as a mixer or multiplier. Proceeding along the slot line toward the output end, one encounters the aforementioned transition, which couples the slot line to the output CPW. Impedance tuning of the transition is accomplished by use of a high-impedance section immediately before the transition.

Gaier, Todd↗

NASA NTRS2008

Compact, Single-Stage MMIC InP HEMT Amplifier

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

Pukala, David↗

NASA NTRS2008

Three-Stage InP Submillimeter-Wave MMIC Amplifier

A submillimeter-wave monolithic integrated- circuit (S-MMIC) amplifier has been designed and fabricated using an indium phosphide (InP) 35-nm gate-length high electron mobility transistor (HEMT) device, developed at Northrop Grumman Corporation. The HEMT device employs two fingers each 15 micrometers wide. The HEMT wafers are grown by molecular beam epitaxy (MBE) and make use of a pseudomorphic In0.75Ga0.25As channel, a silicon delta-doping layer as the electron supply, an In0.52Al0.48As buffer layer, and an InP substrate. The three-stage design uses coplanar waveguide topology with a very narrow ground-to-ground spacing of 14 micrometers. Quarter-wave matching transmission lines, on-chip metal-insulator-metal shunt capacitors, series thin-film resistors, and matching stubs were used in the design. Series resistors in the shunt branch arm provide the basic circuit stabilization. The S-MMIC amplifier was measured for S-parameters and found to be centered at 320 GHz with 13-15-dB gain from 300-345 GHz. This chip was developed as part of the DARPA Submillimeter Wave Imaging Focal Plane Technology (SWIFT) program (see figure). Submillimeter-wave amplifiers could enable more sensitive receivers for earth science, planetary remote sensing, and astrophysics telescopes, particularly in radio astronomy, both from the ground and in space. A small atmospheric window at 340 GHz exists and could enable ground-based observations. However, the submillimeter-wave regime (above 300 GHz) is best used for space telescopes as Earth s atmosphere attenuates most of the signal through water and oxygen absorption. Future radio telescopes could make use of S-MMIC amplifiers for wideband, low noise, instantaneous frequency coverage, particularly in the case of heterodyne array receivers.

Pukala, David↗

NASA NTRS2007

Recent Results of a New Microwave SQUID Multiplexer

We are developing a proof-of-concept microwave SQUID multiplexer containing four SQUIDs coupled to GHz frequency resonant circuits and fed with a single microwave readout line. The resonators are half-wave coplanar waveguide sections and are similar to the structures used for the microwave kinetic inductance detectors developed in our group. Optimal values for the interdigital gap capacitors were determined to maximize the sensitivity of the transmitted and reflected microwave signal with respect to changes in the dynamic resistance of the SQUID. The dc current-bias line for the SQUID has an in-line inductive high frequency filter to minimize coupling between the bias line and resonator. A high frequency modulation scheme is proposed to eliminate the need for individual flux biasing of the SQUIDs, which extends the dynamic range of the readout. In this scheme a common modulation signal is imposed on each SQUID and the received signal is demodulated at one and two times the modulation frequency to maintain sensitivity at any flux state. We present the recent results of the microwave SQUID multiplexer system operating at a readout frequency range of 10 - 11GHz.

superconducting quantum interference device (SQUID↗

NASA NTRS2007

Optically Transparent Split-Ring Antennas for 1 to 10 GHz

Split-ring antennas made from optically transparent, electrically conductive films have been invented for applications in which there are requirements for compact antennas capable of operation over much or all of the frequency band from 1 to 10 GHz. Primary examples of such applications include wireless local-area networks and industrial, scientific, and medical (ISM) applications. These antennas can be conveniently located on such surfaces as those of automobile windows and display screens of diverse hand-held electronic units. They are fabricated by conventional printed-circuit techniques and can easily be integrated with solid-state amplifier circuits to enhance gain. The structure of an antenna of this type includes an antenna/feed layer supported on the top or outer face of a dielectric (e.g., glass) and, optionally, a ground layer on the bottom or inner face of the substrate. The ring can be in the form of either a conductive strip or a slot in the antenna/feed layer. The ring can be of rectangular, square, circular, elliptical, or other suitable shape and can be excited by means of a microstrip, slot line, or coplanar waveguide. For example, the antenna shown in the figure features a square conductive-strip split ring with a microstrip feed. In general, an antenna fed at its external boundary in the manner of this invention presents very high impedance, thereby creating an impedance-matching problem. Splitting the ring . that is, cutting a notch through the ring . offers a solution to the problem in that the notch fixes the location of maximum electric field, which location is directly related to the impedance. Thus, an excellent impedance match can be achieved through proper choice of the location of the notch. In geometric layout, such a ring antenna structure is typically between 1.4 and 1.3 the size of a patch antenna capable of operating in the same frequency range. This miniaturization of the antenna is desirable, not only because it contributes to overall miniaturization of equipment, but also because minimization of the extent of the optically transparent, electrically conductive film helps to minimize the electrical loss associated with the surface resistance ( 5 ohms per square) of the transparent, electrically conductive film material. Incidentally, even at 5 ohms per square, this surface resistance is significantly less than that of indium tin oxide film (typically > 25 ohms per square), which, heretofore has been the transparent, electrically conductive film material of choice. At the time of writing this article, information on the composition of the lower-resistance film used in the antennas of this invention was not available.

Lee, Richard Q.↗