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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS1989

Four-terminal connector for measuring resistance of a pyrotechnic initiator

A four-terminal electrical connector device (40) for testing and measuring unknown resistances of initiators (11) used for starting pyrotechnic events aboard a Space Transportation System. The testing device minimizes contact resistance degradation effects and so improves the reliability of resistance measurement taken with the device. Separate and independent voltage sensing (19) and current supply (20) circuits each includes a pair of socket contacts (13-16) for mating engagement with the pins (17,18) of the initiator. The unknown resistance that is measured by the device is the resistance of the bridgewire (23) of the initiator which is required to be between 0.95 and 1.15 ohms.

Robinson, Robert L.↗
NASA NTRS1990

Development of a unique laboratory standard indium gallium arsenide detector for the 500 to 1700 micron spectral region, phase 2

In the course of this work, 5 mm diameter InGaAs pin detectors were produced which met or exceeded all of the goals of the program. The best results achieved were: shunt resistance of over 300 K ohms; rise time of less than 300 ns; contact resistance of less than 20 ohms; quantum efficiency of over 50 percent in the 0.5 to 1.7 micron range; and devices were maintained and operated at 125 C without deterioration for over 100 hours. In order to achieve the goals of this program, several major technological advances were realized, among them: successful design, construction and operation of a hydride VPE reactor capable of growing epitaxial layers on 2 inch diameter InP substrates with a capacity of over 8 wafers per day; wafer processing was upgraded to handle 2 inch wafers; a double layer Si3N4/SiO2 antireflection coating which enhances response over the 0.5 to 1.7 micron range was developed; a method for anisotropic, precisely controlled CH4/H2 plasma etching for enhancement of response at short wavelengths was developed; and electronic and optical testing methods were developed to allow full characterization of detectors with size and spectral response characteristics. On the basis of the work and results achieved in this program, it is concluded that large size, high shunt resistance, high quantum efficiency InGaAs pin detectors are not only feasible but also manufacturable on industrial scale. This device spans a significant portion of visible and near infrared spectral range and it will allow a single detector to be used for the 0.5 to 1.7 micron spectral region, rather than the presently used silicon (for 0.5 to 1.1 microns) and germanium (0.8 to 1.7 microns).

Ban, Vladimir S.↗
NASA NTRS1980

Advances in tunable diode laser technology

The improvement of long-term reliability, the purification of mode properties, and the achievement of higher-temperature operation were examined. In reliability studies a slow increase in contact resistance during room temperature storage for lasers fabricated with In-Au or In-Pt contacts was observed. This increase is actually caused by the diffusion of In into the surface layer of laser crystals. By using a three layered structure of In-Au-Pt or In-Pt-Au, this mode of degradation was reduced. In characterizing the mode properties, it was found that the lasers emit in a highly localized, filamentary manner. For widestripe lasers the emission occurs near the corners of the junction. In order to achieve single-mode operation, stripe widths on the order of 8-10 micrometers are needed. Also, it was found that room temperature electroluminescence is possible near 4.6 micrometers.

Lo, W.↗
NASA NTRS1994

The Anderson Current Loop

Four-wire-probe concept applied to electrical-resistance transducers. Anderson current loop is excitation-and-signal-conditioning circuit suitable for use with strain gauges, resistance thermometers, and other electrical-resistance transducers mounted in harsh environments. Used as alternative to Wheatstone bridge. Simplifies signal-conditioning problem, enabling precise measurement of small changes in resistance of transducer. Eliminates some uncertainties in Wheatstone-bridge resistance-change measurements in flight research. Current loop configuration makes effects of lead-wire and contact resistances insignificantly small. Also provides output voltage that varies linearly with change in gauge resistance, and does so at double sensitivity of Wheatstone bridge.

Anderson, Karl F.↗
NASA NTRS1975

Glass-Si heterojunction solar cells

Experimental studies and models for In2O3/Si and SnO2/N-Si solar cells are considered for their suitability in terrestrial applications. The silicon is the active material, and the glass serves as the window to solar radiation, an antireflection coating of the Si, and a low resistance contact. Results show that amorphous windows or layers suppress photocurrent. The interfacial SiO2 layer suppresses photocurrent and increases series resistance. Suppression increases with illumination.

Anderson, R. L.↗
NASA NTRS1991

The influence of interstitial Ga and interfacial Au2P3 on the electrical and metallurgical behavior of Au-contacted III-V semiconductors

The effect of introducing a very small amount of Ga into Au-contacted InP on the behavior of that contact system was investigated. It was found that Ga affected both the metallurgical and the electrical behavior of the system. It is shown that Ga atoms in the interstices of the Au lattice prevent the solid-state reactions that normally take place between Au and InP during contact sintering and cause an order of magnitude reduction in the specific contact resistivity. It is also shown that the presence of Ga affects the reactions of GaP and GaAs with Au contacts.

Weizer, Victor G.↗
NASA NTRS2026

Development and Validation of a High-Vacuum Thermal Conductivity Testbed for Aerospace Interface Materials

Thermal Interface Materials (TIMs) are critical components in spacecraft thermal management systems, where thermal performance is strongly influenced by vacuum conditions, interface contact resistance, and layered metallic joint behavior. However, manufacturer-reported thermal conductivity values are often derived under idealized conditions and may not accurately represent performance within operational aerospace applications. To address this limitation, the Testbed for Advanced Interface Materials in Vacuum (TAIMV) was developed as a modular vacuum-compatible thermal conductivity characterization platform capable of evaluating aerospace-relevant TIM configurations under both ambient and high-vacuum environments. The testbed was derived from the ASTM C1044-16 guarded hot plate methodology and incorporates interchangeable layers of stainless steel coupon geometries, independently controlled main and guard heaters, embedded resistance temperature detectors (RTDs), thermocouples, multi-layer insulation (MLI), and a temperature-controlled cold plate to characterize through-thickness thermal gradients across layered interfaces. In the current configuration, interface compression is limited to the nominal contact pressure generated by the experimental stack assembly. Initial experimental campaigns were conducted at ambient pressure and below 1×10-5 torr for vacuum cases using multiple interface materials including Braycote 601EF and Krytox-based greases across a range of thermal operating conditions. In parallel, a coupled numerical Python thermal model was developed to predict temperature distribution throughout the stack while accounting for conduction, radiation, and parasitic heat transfer pathways and effective interface resistance effects. Experimental measurements and numerical predictions showed consistent thermal trends across multiple operating conditions and environmental states. Results also revealed measurable differences between ambient and vacuum thermal behavior, demonstrating the importance of interface resistance, parasitic heat transfer mechanisms, and stack geometry in determining effective thermal performance within layered thermal interfaces. The presented work establishes a foundation for future thermal model correlation efforts and expanded characterization of aerospace thermal interface materials under representative environmental conditions. Future work will focus on the integration of a load cell system to enable controlled pressure-dependent characterization of thermal interface materials under compressive loading. This capability will allow investigation of the influence of contact pressure on effective thermal conductivity, interface resistance, and thermal performance within layered aerospace thermal interfaces under representative operational conditions.

Thermal Development Testing↗
NASA NTRS1987

InP based solar cells for space application: Reduction of external losses

Although InP-based solar cells have considerable potential for space applications, it is necessary to improve efficiencies to around the level of GaAs or Si cells before their excellent radiation resistance can be regarded as a dominant advantage. The authors concentrate on indium-tin-oxide/InP cells, presenting data relating to reduction of the contact resistance of the rear surface metallization, reduction of reflectance losses by choosing indium-tin-oxide deposition conditions to give specific optical properties, and reduction of losses associated with the grid. Simultaneous optimization of all of these has led to improved values of Jsc. For devices of approximately 1 cm2 in area, the largest Jsc achieved to date is 28.1 mA/aq cm (AM1.5, SERI/NASA direct normal spectrum, 25 C, total area, 100 mW/sq cm). For this particular cell, the equivalent AM0 value of Jsc was 34.6 mA/sq cm, which appears to be the largest reported for any InP-based cell.

Wu, X.↗
NASA NTRS2002

The Electrical and Thermal Conductivity of Woven Pristine and Intercalated Graphite Fiber-Polymer Composites

A series of woven fabric laminar composite plates and narrow strips were fabricated from a variety of pitch-based pristine and bromine intercalated graphite fibers in an attempt to determine the influence of the weave on the electrical and thermal conduction. It was found generally that these materials can be treated as if they are homogeneous plates. The rule of mixtures describes the resistivity of the composite fairly well if it is realized that only the component of the fibers normal to the equipotential surface will conduct current. When the composite is narrow with respect to the fiber weave, however, there is a marked angular dependence of the resistance which was well modeled by assuming that the current follows only along the fibers (and not across them in a transverse direction), and that the contact resistance among the fibers in the composite is negligible. The thermal conductivity of composites made from less conductive fibers more closely followed the rule of mixtures than that of the high conductivity fibers, though this is thought to be an artifact of the measurement technique. Electrical and thermal anisotropy could be induced in a particular region of the structure by weaving together high and low conductivity fibers in different directions, though this must be done throughout all of the layers of the structure as interlaminar conduction precludes having only the top layer carry the anisotropy. The anisotropy in the thermal conductivity is considerably less than either that predicted by the rule of mixtures or the electrical resistivity.

Gaier, James R.↗
NASA NTRS1988

Effect of length of chopped pristine and intercalated graphite fibers on the resistivity of fiber networks

Samples of Amoco P-100 fibers were chopped to lengths of 3.14, 2.53, 1.90, 1.27, 0.66 mm, or milled for 2 hours. The two-point resistivity of compacts of these fibers were measured as a function of pressure from 34 kPa to 143 MPa. Samples of each fiber length were intercalated with bromine at room temperature and similarly measured. The low pressure resistivity of the compacts decreased with increasing fiber length. Intercalation lowered the resistivity of each of the chopped length compacts, but raised the resistivity of the milled fiber compacts. Bulk resistivity of all samples decreased with increasing pressure at similar rates. Even though fiber volumes were as low as 5 percent, all measurements exhibited measurable resistivity. A greater change with pressure in the resistance was observed for shorter fibers than for longer, probably an indication of tighter fiber packing. Intercalation appeared to have no effect on the fiber to fiber contact resistance.

Gaier, James R.↗
NASA NTRS1966

Diffusion technique stabilizes resistor values

Reduction of the contact resistance stabilizes the values, over a broad temperature range, of resistors used in linear integrated circuits. This reduction is accomplished by p-plus diffusion under the alloyed aluminum contacts.

Gallagher, R. C.↗
NASA NTRS1990

Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

Virtually every device that makes use of the new ceramic superconductors will need normal conductor to supercondutor contacts. The current-voltage and electrical noise characteristics of these contacts could be become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quanity often used to characterize electrical noise, very closely followed an empirical relationship given by, S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

Hall, J.↗
NASA NTRS1991

Low frequency electrical noise across contacts between a normal conductor and superconducting bulk YBa2Cu3O7

Virtually every device that makes use of the new ceramic superconductors will need normal conductor to superconductor contacts. The current-voltage and electrical noise characteristics of these contacts could become important design considerations. I-V and low frequency electrical noise measurements are presented on contacts between a normal conductor and superconducting polycrystalline YBa2Cu3O7. The contacts were formed by first sputtering gold palladium pads onto the surface of the bulk superconductor and then using silver epoxy to attach a wire(s) to each pad. Voltage across the contacts was found for small current densities. The voltage spectral density, S sub v(f), a quantity often used to characterize electrical noise, very closely followed an empirical relationship given by S sub v(f) = C(VR)sq/f, where V is the DC voltage across the contact, R is the contact resistance, F is frequency, and C is a contant found to be 2 x 10(exp -10)/Omega sq at 78 K. This relationship was found to be independent of contact area, contact geometry, sample fabrication technique, and sample density.

Hall, J.↗
NASA NTRS1972

Thermal conductance in a bolted joint.

The thermal contact resistance of a bolted joint is composed of two components: large scale constriction which is influenced by the extent of the interfacial pressure distribution and small scale constriction which is influenced by the magnitude of the local pressure. It is analytically shown how the roughness asperities at the contact surfaces of the joint affect these two constrictions but in opposite senses. The sum of the two effects, the total resistance, may increase or decrease with changing resistance and examples are given where an optimum roughness will minimize total joint resistance.

Roca, R. T.↗
NASA NTRS1985

Enhanced adhesion of films to semiconductors or metals by high energy bombardment

Films (12) of a metal such as gold or other non-insulator materials are firmly bonded to other non-insulators such as semiconductor substrates (10), suitably silicon or gallium arsenide by irradiating the interface with high energy ions. The process results in improved adhesion without excessive doping and provides a low resistance contact to the semiconductor. Thick layers can be bonded by depositing or doping the interfacial surfaces with fissionable elements or alpha emitters. The process can be utilized to apply very small, low resistance electrodes (78) to light-emitting solid state laser diodes (60) to form a laser device 70.

Tombrello, Thomas A.↗
NASA NTRS2009

Complementary Barrier Infrared Detector

The complementary barrier infrared detector (CBIRD) is designed to eliminate the major dark current sources in the superlattice infrared detector. The concept can also be applied to bulk semiconductor- based infrared detectors. CBIRD uses two different types of specially designed barriers: an electron barrier that blocks electrons but not holes, and a hole barrier that blocks holes but not electrons. The CBIRD structure consists of an n-contact, a hole barrier, an absorber, an electron barrier, and a p-contact. The barriers are placed at the contact-absorber junctions where, in a conventional p-i-n detector structure, there normally are depletion regions that produce generation-recombination (GR) dark currents due to Shockley-Read- Hall (SRH) processes. The wider-bandgap complementary barriers suppress G-R dark current. The barriers also block diffusion dark currents generated in the diffusion wings in the neutral regions. In addition, the wider gap barriers serve to reduce tunneling dark currents. In the case of a superlattice-based absorber, the superlattice itself can be designed to suppress dark currents due to Auger processes. At the same time, the barriers actually help to enhance the collection of photo-generated carriers by deflecting the photo-carriers that are diffusing in the wrong direction (i.e., away from collectors) and redirecting them toward the collecting contacts. The contact layers are made from materials with narrower bandgaps than the barriers. This allows good ohmic contacts to be made, resulting in lower contact resistances. Previously, THALES Research and Technology (France) demonstrated detectors with bulk InAsSb (specifically InAs0.91Sb0.09) absorber lattice-matched to GaSb substrates. The absorber is surrounded by two wider bandgap layers designed to minimize impedance to photocurrent flow. The wide bandgap materials also serve as contacts. The cutoff wavelength of the InAsSb absorber is fixed. CBIRD may be considered as a modified version of the THALES double heterostructure (DH) p-i-n device, but with even wider bandgap barriers inserted at the contact layer/absorber layer interfaces. It is designed to work with either bulk semiconductors or superlattices as the absorber material. The superlattice bandgap can be adjusted to match the desired absorption cutoff wavelength. This infrared detector has the potential of high-sensitivity operation at higher operating temperatures. This would reduce cooling requirements, thereby reducing the power, mass, and volume of the equipment and allowing an increased mission science return.

Ting, David Z.↗
NASA NTRS1999

Copper-Based OHMIC Contracts for the Si/SiGe Heterojunction Bipolar Transistor Structure

Silicon based heterojunction bipolar transistors (HBT) with SiGe base are potentially important devices for high-speed and high-frequency microelectronics. These devices are particularly attractive as they can be fabricated using standard Si processing technology. However, in order to realize the full potential of devices fabricated in this material system, it is essential to be able to form low resistance ohmic contacts using low thermal budget process steps and have full compatibility with VLSI/ULSI processing. Therefore, a study was conducted in order to better understand the contact formation and to develop optimized low resistance contacts to layers with doping densities corresponding to the p-type SiGe base and n-type Si emitter regions of the HBTS. These as-grown doped layers were implanted with BF(sub 2) up to 1 X 10(exp 16)/CM(exp 2) and As up to 5 x 10(exp 15)/CM2, both at 30 keV for the p-type SiGe base and n-type Si emitter layers, respectively, in order to produce a low sheet resistance surface layer. Standard transfer length method (TLM) contact pads on both p and n type layers were deposited using an e-beam evaporated trilayer structure of Ti/CufTi/Al (25)A/1500A/250A/1000A). The TLM pads were delineated by a photoresist lift-off procedure. These contacts in the as-deposited state were ohmic, with specific contact resistances for the highest implant doses of the order of 10(exp -7) ohm-CM2 and lower.

Das, Kalyan↗