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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 163 records · Page 9
All sourcesNASA NTRSDOE OSTI
NASA NTRS2018

Context Cameras for the Orbiting Carbon Observatory 3 (OCO-3) Instrument

We have developed an adaptable camera platform that takes advantage of screened and qualified commercial off the shelf (COTS) components (CMOS sensor, rad-tolerant microcircuits, lenses) to significantly shorten development time of space-borne visible imaging systems while reducing the overall cost and risk of the development. This modular camera platform is implemented as a suite of two visible-light cameras for the Orbiting Carbon Observatory 3 (OCO-3) instrument at NASA’s Jet Propulsion Laboratory (JPL). The Internal Context Camera (ICC) and External Context Camera (ECC) provide contextual engineering imaging support for the calibration of the OCO-3 instrument, intended to significantly reduce the duration of the mission’s calibration campaign. The OCO-3 mission has taken advantage of the design and qualification work performed by JPL’s Mars 2020 Enhanced Engineering Camera (EECam) team in reusing the qualified COTS CMOS imaging sensor, proven electronic designs, and scalable field-programmable gate array (FPGA) firmware to meet OCO-3’s mission requirements and resource availability. We will be presenting the steps taken by JPL to design, build, and test the Context Cameras for the OCO-3 mission. We will highlight the design deviations from the Mars2020 EECams and discuss the methodology of tailoring the EECam design for the OCO-3 requirements. Camera imaging capabilities, including focal plane and optical performance, will be presented, as well as a summary of the calibration and environmental test results. Finally, we will discuss the potential for future applications for the Context Cameras.

Moore, Douglas↗
NASA NTRS2009

NASA Tech Briefs, December 2009

Topics include: A Deep Space Network Portable Radio Science Receiver; Detecting Phase Boundaries in Hard-Sphere Suspensions; Low-Complexity Lossless and Near-Lossless Data Compression Technique for Multispectral Imagery; Very-Long-Distance Remote Hearing and Vibrometry; Using GPS to Detect Imminent Tsunamis; Stream Flow Prediction by Remote Sensing and Genetic Programming; Pilotless Frame Synchronization Using LDPC Code Constraints; Radiometer on a Chip; Measuring Luminescence Lifetime With Help of a DSP; Modulation Based on Probability Density Functions; Ku Telemetry Modulator for Suborbital Vehicles; Photonic Links for High-Performance Arraying of Antennas; Reconfigurable, Bi-Directional Flexfet Level Shifter for Low-Power, Rad-Hard Integration; Hardware-Efficient Monitoring of I/O Signals; Video System for Viewing From a Remote or Windowless Cockpit; Spacesuit Data Display and Management System; IEEE 1394 Hub With Fault Containment; Compact, Miniature MMIC Receiver Modules for an MMIC Array Spectrograph; Waveguide Transition for Submillimeter-Wave MMICs; Magnetic-Field-Tunable Superconducting Rectifier; Bonded Invar Clip Removal Using Foil Heaters; Fabricating Radial Groove Gratings Using Projection Photolithography; Gratings Fabricated on Flat Surfaces and Reproduced on Non-Flat Substrates; Method for Measuring the Volume-Scattering Function of Water; Method of Heating a Foam-Based Catalyst Bed; Small Deflection Energy Analyzer for Energy and Angular Distributions; Polymeric Bladder for Storing Liquid Oxygen; Pyrotechnic Simulator/Stray-Voltage Detector; Inventions Utilizing Microfluidics and Colloidal Particles; RuO2 Thermometer for Ultra-Low Temperatures; Ultra-Compact, High-Resolution LADAR System for 3D Imaging; Dual-Channel Multi-Purpose Telescope; Objective Lens Optimized for Wavefront Delivery, Pupil Imaging, and Pupil Ghosting; CMOS Camera Array With Onboard Memory; Quickly Approximating the Distance Between Two Objects; Processing Images of Craters for Spacecraft Navigation; Adaptive Morphological Feature-Based Object Classifier for a Color Imaging System; Rover Slip Validation and Prediction Algorithm; Safety and Quality Training Simulator; Supply-Chain Optimization Template; Algorithm for Computing Particle/Surface Interactions; Cryogenic Pupil Alignment Test Architecture for Aberrated Pupil Images; and Thermal Transport Model for Heat Sink Design.

Source record↗
NASA NTRS2007

The Effects of Radiation on Imagery Sensors in Space

Recent experience using high definition video on the International Space Station reveals camera pixel degradation due to particle radiation to be a much more significant problem with high definition cameras than with standard definition video. Although it may at first appear that increased pixel density on the imager is the logical explanation for this, the ISS implementations of high definition suggest a more complex causal and mediating factor mix. The degree of damage seems to vary from one type of camera to another, and this variation prompts a reconsideration of the possible factors in pixel loss, such as imager size, number of pixels, pixel aperture ratio, imager type (CCD or CMOS), method of error correction/concealment, and the method of compression used for recording or transmission. The problem of imager pixel loss due to particle radiation is not limited to out-of-atmosphere applications. Since particle radiation increases with altitude, it is not surprising to find anecdotal evidence that video cameras subject to many hours of airline travel show an increased incidence of pixel loss. This is even evident in some standard definition video applications, and pixel loss due to particle radiation only stands to become a more salient issue considering the continued diffusion of high definition video cameras in the marketplace.

Mathis, Dylan↗
NASA NTRS1992

An Analog Processor for Image Compression

This paper describes a novel analog Vector Array Processor (VAP) that was designed for use in real-time and ultra-low power image compression applications. This custom CMOS processor is based architectually on the Vector Quantization (VQ) algorithm in image coding, and the hardware implementation fully exploits the inherent parallelism built-in the VQ algorithm.

Vector Array Processor VAP analog processor image ↗
NASA NTRS1996

Programmable Multiresolution CMOS Active Pixel Sensor

CMOS active pixel sensors (APS) allow the flexibility of placing signal processing circuitry on the imaging focal plane. The multiresolution CMOS APS can perform block averaging on-chip to eliminate the off-chip software intensive image processing. This 128 x 128 APS array can be read out at any user-defined resolution by configuring a set of digital shift registers. The resolution frame rate is 30 Hz with higher rates for all other image resolutions.

APS↗
NASA NTRS2007

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Pain, Bedabrata↗
DOE OSTI2024

Characterization of a CMOS camera based film digitization platform for gated x-ray imaging diagnostics at the National Ignition Facility

Hardened gated x-ray detectors use photographic film as the data recording medium due to its low sensitivity to the high-yield neutron environments at the National Ignition Facility (NIF). The photographic film is digitized with a Photometric Data Systems (PDS) microdensitometer, which measures the film’s optical density. The PDS scanner is able to measure a dynamic range of 0–5 OD; however, raster scanning the film is time consuming and maintenance of the instrument is challenging due to legacy technology. Since film usage at NIF is expected to continue in the foreseeable future, a digitization platform that is faster and more maintainable would benefit the NIF’s current and future operations. Here, this work presents the characterization of the digital transitions (DT) atom, a CMOS camera-based digitization platform that records film data in a single image capture very quickly and has widely available user support. The preliminary results suggest that the DT atom is able to reconstruct exposures accurately enough to be a competitive alternative to the PDS Scanner.

47 OTHER INSTRUMENTATION↗
NASA NTRS1984

Optical Testing of Integrated Circuits

Optical spot-raster scanner produces weighted photoresponse image (PI) of operating CMOS IC. Digital analysis of PI's, which correlates differences in PI's with electrical behavior of IC, shows promise both as 100-percent screening method for use in IC manufacture and as diagnostic tool in IC development.

Erickson, J.↗
NASA NTRS2014

A 0.18 micrometer CMOS Thermopile Readout ASIC Immune to 50 MRAD Total Ionizing Dose (SI) and Single Event Latchup to 174MeV-cm(exp 2)/mg

Radiation hardened by design (RHBD) techniques allow commercial CMOS circuits to operate in high total ionizing dose and particle fluence environments. Our radiation hard multi-channel digitizer (MCD) ASIC (Figure 1) is a versatile analog system on a chip (SoC) fabricated in 180nm CMOS. It provides 18 chopper stabilized amplifier channels, a 16- bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The MCD was evaluated at Goddard Space Flight Center and Texas A&M University's radiation effects facilities and found to be immune to single event latchup (SEL) and total ionizing dose (TID) at 174 MeV-cm(exp 2)/mg and 50 Mrad (Si) respectively.

radiation hardened by design↗
DOE OSTI2024

Development of selenium imaging detectors toward a definitive search for neutrinoless ββ decay

Imaging sensors made from an ionization target layer of amorphous selenium (aSe) coupled to a silicon complementary metal-oxide-semiconductor (CMOS) active pixel array for charge readout are a promising technology for neutrino physics. The high spatial resolution in a solid-state target provides unparalleled rejection of backgrounds from natural radioactivity in the search for the neutrinoless ββ decay of 82 Se. With this grant, we experimentally determined two crucial factors necessary for the realization of this novel technology: i) the intrinsic energy response of aSe to ionizing electrons, and ii) the feasibility to couple a target layer of aSe to a CMOS active pixel sensor to image electron tracks.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
NASA NTRS1995

Solid-state image sensor with focal-plane digital photon-counting pixel array

A photosensitive layer such as a-Si for a UV/visible wavelength band is provided for low light level imaging with at least a separate CMOS amplifier directly connected to each PIN photodetector diode to provide a focal-plane array of NxN pixels, and preferably a separate photon-counting CMOS circuit directly connected to each CMOS amplifier, although one row of counters may be time shared for reading out the photon flux rate of each diode in the array, together with a buffer memory for storing all rows of the NxN image frame before transfer to suitable storage. All CMOS circuitry is preferably fabricated in the same silicon layer as the PIN photodetector diode for a monolithic structure, but when the wavelength band of interest requires photosensitive material different from silicon, the focal-plane array may be fabricated separately on a different semiconductor layer bump-bonded or otherwise bonded for a virtually monolithic structure with one free terminal of each diode directly connected to the input terminal of its CMOS amplifier and digital counter for integration of the photon flux rate at each photodetector of the array.

Fossum, Eric R.↗
NASA NTRS2012

Compact Autonomous Hemispheric Vision System

Solar System Exploration camera implementations to date have involved either single cameras with wide field-of-view (FOV) and consequently coarser spatial resolution, cameras on a movable mast, or single cameras necessitating rotation of the host vehicle to afford visibility outside a relatively narrow FOV. These cameras require detailed commanding from the ground or separate onboard computers to operate properly, and are incapable of making decisions based on image content that control pointing and downlink strategy. For color, a filter wheel having selectable positions was often added, which added moving parts, size, mass, power, and reduced reliability. A system was developed based on a general-purpose miniature visible-light camera using advanced CMOS (complementary metal oxide semiconductor) imager technology. The baseline camera has a 92 FOV and six cameras are arranged in an angled-up carousel fashion, with FOV overlaps such that the system has a 360 FOV (azimuth). A seventh camera, also with a FOV of 92 , is installed normal to the plane of the other 6 cameras giving the system a > 90 FOV in elevation and completing the hemispheric vision system. A central unit houses the common electronics box (CEB) controlling the system (power conversion, data processing, memory, and control software). Stereo is achieved by adding a second system on a baseline, and color is achieved by stacking two more systems (for a total of three, each system equipped with its own filter.) Two connectors on the bottom of the CEB provide a connection to a carrier (rover, spacecraft, balloon, etc.) for telemetry, commands, and power. This system has no moving parts. The system's onboard software (SW) supports autonomous operations such as pattern recognition and tracking.

Pingree, Paula J.↗
DOE OSTI2022

The hard x-ray nanotomography microscope at the advanced light source

Beamline 11.3.1 at the Advanced Light Source is a tender/hard (6–17 keV) x-ray bend magnet beamline recently re-purposed with a new full-field, nanoscale transmission x-ray microscope. The microscope is designed to image composite and porous materials possessing a submicrometer structure and compositional heterogeneity that determine materials’ performance and geologic behavior. The theoretical and achieved resolutions are 55 and <100 nm, respectively. The microscope is used in tandem with a <25 nm eccentricity rotation stage for high-resolution volume imaging using nanoscale computed tomography. The system also features a novel bipolar illumination condenser for the illumination of an ~100 μm spot of interest on the sample, followed by a phase-type zone plate magnifying objective of ~52 µm field of view and a phase detection ring. The zone plate serves as the system objective and magnifies the sample with projection onto an indirect x-ray detection system, consisting of a polished single crystal CsI(Tl) scintillator and a range of high-quality Plan Fluorite visible light objectives. The objectives project the final visible light image onto a water-cooled CMOS 2048 × 2048-pixel 2 detector. Here, in this paper, we will discuss the salient features of this instrument and describe early results from imaging the internal three-dimensional microstructure and nanostructure of target materials, including fiber-reinforced composites and geomaterials.

47 OTHER INSTRUMENTATION↗
NASA NTRS2009

Alternative Packaging for Back-Illuminated Imagers

An alternative scheme has been conceived for packaging of silicon-based back-illuminated, back-side-thinned complementary metal oxide/semiconductor (CMOS) and charge-coupled-device image-detector integrated circuits, including an associated fabrication process. This scheme and process are complementary to those described in "Making a Back-Illuminated Imager With Back-Side Connections" (NPO-42839), NASA Tech Briefs, Vol. 32, No. 7 (July 2008), page 38. To avoid misunderstanding, it should be noted that in the terminology of imaging integrated circuits, "front side" or "back side" does not necessarily refer to the side that, during operation, faces toward or away from a source of light or other object to be imaged. Instead, "front side" signifies that side of a semiconductor substrate upon which the pixel pattern and the associated semiconductor devices and metal conductor lines are initially formed during fabrication, and "back side" signifies the opposite side. If the imager is of the type called "back-illuminated," then the back side is the one that faces an object to be imaged. Initially, a back-illuminated, back-side-thinned image-detector is fabricated with its back side bonded to a silicon handle wafer. At a subsequent stage of fabrication, the front side is bonded to a glass wafer (for mechanical support) and the silicon handle wafer is etched away to expose the back side. The frontside integrated circuitry includes metal input/output contact pads, which are rendered inaccessible by the bonding of the front side to the glass wafer. Hence, one of the main problems is to make the input/output contact pads accessible from the back side, which is ultimately to be the side accessible to the external world. The present combination of an alternative packaging scheme and associated fabrication process constitute a solution of the problem.

Pain, Bedabrata↗
DOE OSTI2020

Soft x-ray detection for small satellites with a commercial CMOS sensor at room temperature

Recently CMOS (complementary metal-oxide-semiconductor) sensors have progressed to a point where they may offer improved performance in imaging x-ray detection compared to the CCDs often used in x-ray satellites. We demonstrate x-ray detection in the soft x-ray band (250-1700 eV) by a commercially available back-illuminated Sony IMX290LLR CMOS sensor using the Advanced Photon Source at the Argonne National Laboratory. Additionally, while operating the device at room temperature, we measure energy resolutions (FWHM) of 47 eV at 250 eV and and 77 eV 1700 eV which are comparable to the performance of the Chandra ACIS and the Suzaku XIS. Furthermore, we demonstrate that the IMX290LLR can withstand radiation up to 17.1 krad, making it suitable for use on spacecraft in low earth orbit.

47 OTHER INSTRUMENTATION↗
DOE OSTI2026

Beam test performance of AstroPix sensor with 120 GeV protons

AstroPix is a High-Voltage CMOS Monolithic Active Pixel Sensor (HV-CMOS MAPS) developed for precision gamma-ray imaging and spectroscopy in the medium-energy regime, as well as for precise shower imaging and tracking in the Barrel Imaging Calorimeter (BIC) of the Electron Proton/Ion Collider (ePIC) detector at the future Electron–Ion Collider (EIC). We present beam test results of the AstroPix_v3 sensor using a 120 GeV proton beam at the Fermilab Test Beam Facility (FTBF), performed as part of the broader experimental campaign for the BIC prototype calorimeter. The sensor’s 500 µm pixel pitch enabled precise measurement of the beam profile, providing important information for the calorimeter performance studies. Using the measured 120 GeV proton data, we measure the energy deposit of minimum ionizing particles (MIP) and use them to extract the corresponding effective depletion depth at a single bias voltage of −150 V .

AstroPix↗