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At least 163 records · Page 9

Effects of Al Substitution for Fe in Na₅FeSi₄O₁₂ (5.1.8) Glasses: Structure and Crystallization

In this study, the effects of substituting Al for Fe in 5Na2O∙(Al2O3)x∙(Fe2O3)1-x∙8SiO2 glass, x=0 to 1, and Na5AlxFe1-xSi4O12 (5.1.8) crystal, were investigated using thermal analysis, Fe K-edge X-ray absorption, X-ray diffraction, Raman spectroscopy, and Electron Probe Microanalysis. In both glass and crystallized glass, nearly all the Fe was tetrahedrally coordinated Fe3+, as expected from the high concentration of Na2O. The substitution of Al for Fe in the glasses caused the glass transition temperature to increase as polymerization increased, as evidenced by Raman, likely due to both field strength differences of Al vs Fe and a small amount of Fe2+ network modifier present with Fe. After heat treatment at 700 °C for 24 hours, the glasses had crystallized, forming Na2SiO3 and NaAlSiO4 in compositions with high Al concentrations and the 5.1.8 crystal in compositions with high Fe concentrations. Through electron microprobe, it was determined that <0.04 formula unit Al incorporated into the 5.1.8 crystal, i.e. Na5Fe0.96Al0.04Si4O12. The 5.1.8 crystal only formed when Fe concentration was higher than Al in the starting glass.

Antonio, Raine (ORCID:0009000634297975)↗

Fast Growth of Ga2O3 on Highly Offcut (100)-Oriented Substrates

Beta-Ga2O3 has emerged as a leading candidate for next-generation power electronics, radio frequency (RF) switches, and extreme environment electronics due to a wide band gap (4.6 - 4.9 eV), high dopability (approximately 40 meV activation energy for an isolated silicon donor), and melt growth characteristics resulting in commercially available 4-inch substrates and commercial demonstrations of 6-inch substrates by multiple techniques. The (100) surface of Ga2O3 is highly desirable from a device and epitaxy standpoint - bulk growth of (100) material is more scalable than (010), the surface is nearly lattice-matched to p-type partner NiO, and Al2O3 incorporates at higher concentrations without phase separation. More importantly, the impact ionization coefficients along the [100] direction are low, leading to the highest possible critical fields. This is advantageous compared to the current state of the art, (001), due to reduced surface defects and increased possible breakdown voltage. However, the epitaxial growth rate on (100) surfaces is less than 10% of other faces due to weak bonding and favorable desorption, and on-axis (100) growth easily forms twin domains. Recent demonstrations have shown growth rate improvements from 0.4 nm/min to 1.5 nm/min by growing on (100) wafers that are offcut 6 degrees in the -c direction. These films show step-flow growth from (20-1) step-edges and high electron mobility due to suppressed twins. Despite these exciting results, offcuts greater than 6 degrees have not been explored due to the waste associated with grinding and polishing large offcuts. In this talk we will discuss the molecular beam epitaxy (MBE) growth and properties of Beta-Ga2O3 grown on (100) substrates offcut in the -c direction up to 13.4 degrees. These large offcuts are enabled by edge-fed film-defined growth (EFG) where the offcut is grown into the surface by pulling the crystal through the EFG die with the seed crystal rotated by the desired offcut angle. We will demonstrate that 13.4 degrees offcut substrates still exhibit a terraced (100) surface, and that a >10x increase (>5 nm/min) in growth rate is achieved. As previously reported on lower offcuts, we observe reversal of substrate twin domains around the (001) direction at the substrate-epilayer interface. We will discuss electrical properties including record-low (by MBE) unintentional doping densities of < 5E15 cm-3 and critical breakdown field in Schottky barrier diodes comparable with state-of-the-art (001) Ga2O3 without edge termination.

36 MATERIALS SCIENCE↗

Atomic Layer Deposition (ALD) to Extend Catalyst Lifetime for Biobased Adipic Acid Production

Robust heterogeneous catalysts are essential for enabling biomass conversion; however, harsh reaction environments introduce durability challenges for many conventional catalyst materials [1]. The hydrogenation of biobased muconic acid to adipic acid is one such emerging chemistry that faces PGM catalyst stability challenges [2]. Muconic acid is a heavily-investigated biobased platform chemical that can be converted into an array of large-market commodity chemicals [2]. PGM catalysts are exceptionally effective for muconic acid hydrogenation to adipic acid, with Pd the most active to date. [2] However, Pd leaches in an acidic environment and this chemistry has a high propensity for fouling. Atomic layer deposition (ALD) is one such material design strategy that has emerged to stabilize supported metal catalysts [3]. ALD coatings are theorized to stabilize supported metal active sites by i) covering high-energy facets most susceptible to degradation, ii) disrupting the physical mobility of active sites, and iii) reinforcing the structure of the underlying catalyst support [3]. However, ALD coatings for catalyst durability with carboxylic acids remains an underdeveloped area of research and literature reports have yet to consider the techno-economic tradeoffs between the ALD manufacturing cost and catalyst lifetime productivity. This study examines low-cycle Al2O3 ALD coatings to stabilize Pd/TiO2 against deactivation during muconic acid hydrogenation. The unique harshness of muconic acid for Pd leaching was evaluated by both experiment and computation. Based on batch reactor screening results, uncoated and ALD coated catalysts were evaluated in a continuous flow reactor for their productivity, stability, and post-reaction regenerability at 700 degrees C. Characterization was performed to assess the impact of ALD coatings on catalyst morphology, as well as following regeneration. Finally, techno-economic analysis models evaluated the value proposition for ALD-coated catalysts within an nth-generation adipic acid biorefinery.

09 BIOMASS FUELS↗

Passivation and alloying element retention in gas atomized powders

A method for gas atomization of a titanium alloy, nickel alloy, or other alumina (Al2O3)-forming alloy wherein the atomized particles are exposed as they solidify and cool in a very short time to multiple gaseous reactive agents for the in-situ formation of a passivation reaction film on the atomized particles wherein the reaction film retains a precursor halogen alloying element that is subsequently introduced into a microstructure formed by subsequent thermally processing of the atomized particles to improve oxidation resistance.

36 MATERIALS SCIENCE↗

Atomic Layer Deposition for Enhanced Reactivity and Stability of Biomass Conversion Catalysts

Heterogeneous catalysts are an essential tool in the transition towards a sustainable, bio-based economy for fuels and chemicals. However, the harsh conditions (e.g., high temperatures, acidity, oxidizing/reducing environments) of many key biomass conversion processes give rise to nanoparticle sintering, support collapse, and metal leaching in conventional PGM catalysts. Active site poisoning due to the relatively high sulfur content of most biomass feedstocks further compounds these durability problems. Next-generation catalysts must be developed to address these stability challenges. In this work, we used a scalable atomic layer deposition (ALD) process to modify conventional Pd-based hydrogenation catalysts to generate significant performance improvements. TiO2 ALD coatings were found to increase the activity of Pd/Al2O3 catalysts towards naphthalene hydrogenation; additionally, these coatings improved the catalyst's resistance to sulfur poisoning and thermal stability under oxidative calcination. Additional work in which Al2O3 ALD coatings were applied to Pd/TiO2 catalysts for muconic acid hydrogenation found similar stability benefits, including improved resistance to Pd leaching in the acidic environment. ALD technology holds great potential in the development of next-generation catalysts for biofuels and bioproducts and this work constitutes an important examination of applying ALD coatings to supported Pd hydrogenation catalysts.

ALD↗

Method of converting ethanol to higher alcohols

A method and catalyst for forming higher alcohols from lower alcohol feedstocks. In one application a highly selective and stable copper pseudo-single-atom supported on MgO—Al2O3 catalyst is provided which provides ethanol condensation to higher alcohols at ˜50% yields and ˜85% selectivity is demonstrated with stable catalyst lifetime over 500 hours in a continuous flow system. In some applications a Guerbet condensation process is further utilized to yield a higher alcohol at a selectivity of near ˜90%.

09 BIOMASS FUELS↗

Lanthanum Strontium Cobaltite-Alumina Fiber Composite Contact Material for Solid Oxide Fuel Cells

Short alumina fibers were added to LSCo contact material to enhance the contact strength and improve thermal cycle stability. Alumina fiber from 2.5 v% to 20 v% were mixed with LSCo and sintered at elevated temperatures. Sintering study showed retardation in densification of LSCo matrix with increasing alumina content. Sintered bulk strength exhibited similar behavior where strength greatly reduced at high alumina v%. Coefficient of thermal expansion showed consistent results with prediction from rule of mixture. Contact strength using anode supported YSZ bilayer coupons improved greatly with the presence of small amount (2.5-5 v%) alumina fibers and no substantial reduction after 10 deep thermal cycles. Candidate LSCo-Al2O3 contact materials was validated in a generic stack test fixture for 1000h at 800oC followed by 10 thermal cycles. Results of impedance analysis showed substantial improvement in thermal cycle stability as compared to LSCo parent materials.

SOFC cathode, strength, LSCo, alumina↗

Damp Heat Degradation of Polycrystalline Silicon Passivated Contacts

After 1000 hours of damp heat exposure at 85% humidity and 85 C, LPCVD n-poly and p-poly are stable for both metallized and non-metallized regions whereas for PECVD, only n-poly is stable; PECVD p-poly suffers significant degradation and defects became more pronounced with exposure time; and PECVD p-poly degrades more than LPCVD p-poly with or without additional dielectric layers (i.e., SiNx + Al2O3 stack).

damp heat degradation↗

Minimizing Cr-Evaporation from Balance of Plant Components by Utilizing Cost-Effective Alumina-Forming Austenitic Steels

A solid oxide fuel cell (SOFC) is a clean and efficient energy conversion device. The development of intermediate-temperature SOFCs has made it preferable to use metallic interconnects (MICs) to greatly reduce the cost and significantly increase the efficiency compared to ceramic interconnect materials. However, gaseous chromium species will evaporate from the chromium-containing layer formed on the surface of commonly used MICs and balance of plant (BoP) components. Volatile chromium species have been shown to form solid deposits which poison the cathodes of SOFCs, causing drastic cell performance degradation and thereby limiting commercialization. In order to alleviate the Cr poisoning and achieve long-term high performance of SOFC stacks, various Al2O3-forming austenitic (AFA) stainless steels applied at different temperatures are evaluated in this project. Based on our Phase I results (500 h operation), it is shown that on the AFAs, an alumina-based protective layer forms under high temperature that is invulnerable to water vapor effects and suppresses the diffusion of chromium and manganese which can prevent the generation of spinels on the alloy surface. Therefore, 310S, OC4 and OC5 at 800 °C and 625, OC11 and OC11LZ at 900 °C are selected to be tested in the Phase II long-term operation. From the results, we find that besides the lower Cr evaporation rates and better oxidation resistance of AFAs than benchmark alloys after short-term (500 h) operation, AFAs also possess the sturdy and compact alumina layer after a long-term operation (5000 h). A protective oxide layer is of great importance for the long-term high-temperature operation of structural materials. The high-temperature oxidation behavior of AFAs and commercial 310S and 625 alloys in Air + 10% H 2 O at 800 °C and 900 °C is systematically investigated. Severe breakaway oxidation and minor spallation are observed for the 310S and 625 after the long-term operation, while the AFAs show high oxidation resistance. It is found that the formation of a continuous alumina layer could greatly prevent the volatilization of chromium vapors. In addition, the corresponding evolving models are discussed. Chromium evaporation from BoP components in high-temperature environment could severely deteriorate the electrochemical performance of SOFC. Several methods were applied to evaluate the Cr evaporation rates of BoP after 500 h exposure at 800 °C to 900 °C in air with 10% H 2 O. An optimal method was designed to exclude the effect of silicon (Si) deposits from quartz tube and sodium (Na) deposits from the sodium carbonate on the oxidation process and the chemical interaction between Cr gaseous species and alumina tube which could provide further quantitative correlation of the evaporated Cr species quantities and degradation rates of SOFC. Based on the great performance of AFAs after long-term operation, AFAs are assembled with Anode-supported cells (ASC) to investigate the the Cr deposition of anode-supported cell under a constant current density of 0.5 A cm -2 at 800 °C with AFA alloys compared with commercial alloys. In addition, the anodic and cathodic processes are deconvoluted by distribution of relaxation times (DRT) method which are comprehensively discussed. It is found out that the voltage exhibited a slight decrease of 5.09 % and 1.54 % in the presence of OC11 and OC11LZA alloy, respectively. However, a considerable decrease of 22.14 % and 12.06 % was determined in the presence of 310S and 625 alloy, respectively. AFAs possessing the low-cost, low Cr evaporation rates and the high oxidation resistance will make it of great potential to replace the existing BoP components.

36 MATERIALS SCIENCE↗

Atomic Layer Deposition for Materials-Based H2 Storage: Opportunities and Limitations

The transportation demands in our growing hydrogen (H2) economy requires robust storage systems. The current commercially implemented technology in fuel cell cars relies on the well-established technology of hydrogen gas compressed to 350-700 bar, depending on the application. The compressed gas tanks in use today are bulky and cost intensive. To address this challenge, material-based storage is one of the long-term alternatives considered and constitutes the focus of this talk. Material-based storage is broadly defined as hydrogen bound to solid materials, with its binding strength varying from physisorption to porous materials, such as zeolites and metal organic frameworks, to chemisorption in (complex) metal hydrides. The ultimate targets set by the U.S. Department of Energy for this technology include a system gravimetric capacity of 6.5 wt% and volumetric capacity of 40 g/L at 100 bar, operating temperatures ranging between -40 C and +40 C and adsorption/desorption timescales of < 5 min. Storage in the form of physisorbed or chemisorbed hydrogen has guided the materials research, which metal- organic framework and (complex) metal hydrides being the most promising materials classes. A variety of these materials have met one or more of the targets, but it has remained elusive for a single material system to meet all these stringent requirements. Nano-encapsulation and low-concentration chemical additives have previously been employed separately to overcome such challenges. Functionalization via atomic layer deposition (ALD), however, offers unique characteristics that make it suitable for both, nano-encapsulation and "doping" with low-concentration additives. This deposition technique has sub-monolayer thickness control, is highly conformal in high-surface area materials and is self-limiting, i.e., once the gas-phase precursor reacts with the available surface sites, the surface reactions stop. In this presentation, we will showcase examples where ALD, more generally vapor-phase functionalization, on (complex) metal hydrides and organic frameworks has improved the material properties for H2 storage. In our first study, Al2O3 was deposited on magnesium borohydride, Mg(BH4)2, at room temperature using trimethylaluminum (TMA) and water. From our findings, encouraging initial results were obtained: the H2 desorption temperature was lowered by 60-120 degrees C, the desorbed gravimetric H2 capacity at temperatures < 250 degrees C was doubled, and the desorption kinetics increased by a factor of ~6 compared to uncoated Mg(BH4)2. However, hydrolysis reactions caused by residual surface -OH groups from the ALD water-pulse degraded the sample substantially. Through this study, the use of TMA was observed to be highly reactive with the Mg(BH4)2 surface species, leading to the strategy of exposing the sample only to TMA. The relative mole fraction of the vapor-phase additive can be precisely controlled with the number of TMA pulses and pulse duration. By tuning these parameters, we show in our second study that 10 pulses of TMA at ambient conditions were able to decrease the H2 desorption temperature by ~100 degrees C while retaining <95 % of its H2 capacity. We applied this approach with other additives such as BBr3, TiCl4 and tetrahydrofuran, and demonstrate that this unique approach opens the door to a new class of molecular additives and catalysts which cannot easily be introduced with conventional mechano-chemical or solvent-based techniques for (complex) metal-hydrides. In the case of metal organic frameworks, ALD is a promising technique to functionalize the pores with metal atoms or functional groups able to tune the gas selectivity and binding energy, for which ~15 kJ/mol has been established as the optimal value for H2 storage in sorbent materials. Vapor-phase techniques such as ALD have numerous benefits over other functionalization tools for H2 storage materials opening innumerable opportunities to the field. To exploit these opportunities, the current limitations on room temperature and water-less ALD processes needs to be overcome which will greatly expand the possibilities of encapsulation and incorporation of additives for organic frameworks and (complex) metal hydrides.

atomic layer deposition↗

Solvent-Free and Non-Sintered 500 Wh/kg All Solid-State Battery

Navitas teamed up with UMD and ORNL to establish a reliable scientific research team. The project addressed processing limitations of state-of-the-art solid electrolytes by extending solvent-free electrode fabrication technology to the scalable production of cathode/solid electrolyte laminates. The innovation started with a solid-state sulfide electrolyte (LiPS) with Cl stabilization able to meet the keystone conductivity challenge in a film of practical thickness (μ 50 µm). The electrolyte was based on a composite of PTFE, and stabilized LiPSCl. With optimization, the ionic conductivity reached 3.3 ×10 -3 S/cm. The solid electrolyte with as low as 0.4% binder allowed long term cycling (> 500 cycles) of Li/SSE/Li cell at > 4 mA/cm 2 with the utilization of Li > 80%. The Li and SSE interfaces were successfully protected with LiF-rich SEI layer. NCM811cathode active materials were coated with a thin layer of Al 2 O 3 (5 nm). The free standing cathode film was fabricated through dry-process with Al2O3-coated NCM811, LiPSCl, active carbon, and small amount PTFE. The all-solid-state batteries were laminated with free standing surface coated NCM811 cathode film, free standing LiPSCl SSE film, and surface protected Li anode together in a single lamination step, and demonstrated high specific capacity (> 200 mAh/g) with coulombic efficiency > 99.5%. The all-solid-state batteries through solvent-free and no-sintering process are promising for large format cell with 500 Wh/Kg specific energy density.

25 ENERGY STORAGE↗

Atomic Layer Deposition for Materials-Based H2 Storage: Mg(BH4)2 as a Case Study

To meet the requirements for vehicular solid-state hydrogen (H2) storage, novel materials such as metal borohydrides have increasingly been investigated, in particular, magnesium borohydride (Mg(BH4)2). While these materials have a high H2 capacity (> 14 wt%), poor hydrogenation-dehydrogenation cyclability and material degradation, (e.g., loss of boron), need to be overcome. Prior research has indicated that nano-encapsulation and chemical additives can address these challenges. Therefore, we pursued these two strategies simultaneously with atomic layer deposition (ALD) on Mg(BH4)2. We investigated the use of metal-oxides (e.g., Al2O3, TiO2, CeO2), Pt- group metals (e.g., Pd, Ru) as well as pulsing only one precursor molecule (e.g., Al(CH3)3, BBr3, TiCl4), and assessed these modified Mg(BH4)2 in terms of their H2 storage properties. This presentation will also present the benefits and limitations of using vapor-phase techniques to modify the properties of Mg(BH4)2.

atomic layer deposition↗

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗

CO2 Sorption in Aminopolymer-Based Direct Air Capture Composites Through Fluorescent Detection

Aminopolymer-mesoporous oxide composites are becoming widely recognized for their ability to adsorb CO2 directly from the air. However, a better fundamental understanding of the nature of these materials under different environmental operating conditions will be necessary before they become ubiquitous in industrial direct air capture (DAC) systems. For example, gas diffusion in general is coupled with polymer segmental mobility in these composites; diffusion is therefore affected by interactions of the polymer with the pore wall of the mesoporous oxide, by the relative humidity of the air, and by electrostatic crosslinks that develop as a function of CO2 sorption. Disentangling these and additional complicated effects in order to better optimize operating conditions is a major challenge for the field. Here, we present a method for quantifying the adsorption of CO2 and moisture in a polyethylenimine (PEI) - Al2O3 composite using infrared sensing while we simultaneously monitor polymer mobility with a fluorescent probe molecule doped into the composite. Both the fluorescence intensity and shape of the emission spectra are strongly dependent on the mobility of the supporting medium. We monitor the polymer mobility and CO2 adsorption kinetics across a series of different relative humidities (RH) with this technique, and we observed that the relative difference between polymer mobility and sorption kinetics from one RH to the next are quite dramatic. We interpret these results and discuss how they can be used to inform the design of more efficient DAC systems for real-world operating conditions.

carbon capture↗

Understanding Hydrogen Passivation Mechanism in Poly-Si Passivating Contacts: Insights from Effusion Studies

Silicon PV is the dominant PV technology, and captures >95% world market share, supporting -100 GW/year. Diffused and passivated pn junctions along with other rear side passivation technologies are the mainstream technologies and will continue to remain so in the coming decades. Passivated contacts, using tunnel oxide passivation stacks at the rear side, will gain market share from about 10% in 2022 up to 58% within the next 10 years. Most mature approaches use passivating layers of hydrogenated Al2O3 and SiNx. LPCVD SiNx provides less hydrogen for passivation compared to PECVD SiNx but can retain the hydrogen up to higher temperatures which is beneficial for firing. Although SiNx provides large amount of hydrogen, this doesn't necessarily translate to good passivation. AlOx:H contributes to retaining H at higher temperatures. Water molecules are also detected during H-effusion and may play a role in passivation of the oxide/wafer interface.

effusion study↗

Biodegradable transient battery built on core-double-shell zinc microparticle networks

A transient or biodegradable battery is provided having a filament structure that limits the speed of reaction allowing for a longer duration of battery power with a controlled current limit. In one embodiment, the filament may be constructed of zinc microparticles or nanoparticles having a thin outer insulation whereby a chemical reaction at the center core results in the progressive disintegration of the insulation revealing more core material. In one embodiment, microparticles or nanoparticles are coated with outer layers of chitosan and Al2O3 nanofilms, respectively, with designable discharge current and battery lifespan by controlling the exposed cross-sectional area of the zinc microparticle center core and the length of the filament, respectively. This novel structure of biodegradable battery provides improved control of battery life and power output, providing a promising solution to power transient medical implants.

Wang, Xudong↗

Bounding Pressure and Flammability Evaluations of Aluminum-Clad Spent Nuclear Fuel Department of Energy Standard Canisters

This paper presents bounding pressure and flammability evaluations for DOE Standard Canister loaded with DOE-managed aluminum-clad spent nuclear fuel (ASNF). The objective of these evaluations is to gain confidence in the safety and feasibility of possible loading configurations for extended (>50 years) periods of dry storage, with particular focus on the dry storage canister pressures and potential for formation of a flammable atmosphere. The primary concern about the extended dry storage of ASNF is radiolytic gas generation. The aluminum cladding of these materials tends to corrode, and these corrosion products—typically aluminum oxides, such as boehmite, bayerite, or gibbsite—could carry water. This makes ASNF dry storage canisters difficult to dry. The gamma radiation field in dry storage environments could cause a radiolytic breakdown of residual water, forming chemical species such as molecular hydrogen (H2). The release of these species could increase the canister pressure and lead to the generation of a flammable canister atmosphere. The bounding evaluations presented within this study surmise conservative, but credible, conditions and processes. This includes the assumption of a full breakdown of a large quantity of free, physisorbed, and chemisorbed water (bound in a trihydrate, i.e., Al2O3 • 3H2O, layer). The considered dry storage configurations include a ~3 m (10 ft) long, ~46 cm (18 in) diameter (10 x 18) DOE Standard Canister loaded with 32 Advanced Test Reactor (ATR) ASNF elements, and a ~3 m (10 ft) long, ~61 cm (24 in) (10 x 24) diameter DOE Standard Canister loaded with 40 ATR ASNF elements. While the results of this study indicate the possibility of atmospheric hydrogen concentrations above the lower flammability limit, insufficient concentrations of oxygen will prevent the formation of flammable atmospheres. The maximum credible pressures remain well within the structural limits of the DOE Standard Canister.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Advances in Molecular Beam Epitaxy Growth of Ultra-Wide Bandgap Ga2O3 Based Alloys

Gallium oxide (Ga2O3) is an emerging ultra-wide bandgap semiconductor material that has attracted attention for its potential to outperform existing SiC and GaN based devices operating at high breakdown voltages and high temperature. Isovalent alloying of In and Al in Ga2O3 provides the ability to engineer bandgap energy and strain of the material. Alloying with Al increases the bandgap energy and the theoretically achievable Baliga's figure of merit, a key measure of a material's ultimate performance limits for high power switching devices. Alloying with In introduces compressive strain and can be used to counteract the tensile strain of Al incorporation. The resulting (AlxGa1-x-yIny)2O3 alloy can be lattice-matched to commercially available Ga2O3 wafers and has a tunable bandgap energy greater than that of Ga2O3, 4.76 eV. Such lattice-matched material can be grown arbitrarily thick without the detrimental effects of elastic strain and relaxation, making it suitable for high voltage diodes and transistors. However, efforts to synthesize isovalent alloys are complicated by their tendency to phase separate into corundum Al2O3 or bixbyite In2O3. Literature reports of the quaternary (AlxGa1-x-yIny)2O3 are limited to <1% unintentional indium incorporation in In-catalyzed (AlxGa1-x)2O3. The primary limitation to quaternary growth is the limited incorporation of indium at elevated growth temperatures. This limited incorporation is due to both the volatility of indium oxide and Al and Ga cation exchange reactions which replace indium in In2O3. We report on the development of a novel high-throughput molecular beam epitaxy (MBE) technique to screen the growth conditions for the ternary alloy (InyGa1-y)2O3, and the application of these findings to the first successful synthesis of phase pure monoclinic (AlxGa1-x-yIny)2O3 by MBE. By leveraging the unique sub-oxide chemistry of Ga2O3 and in-situ monitoring of crystal properties by reflection high-energy electron diffraction (RHEED), a cyclical growth and etch-back method is developed and applied to rapidly characterize the (InyGa1-y)2O3 growth space. This cyclical method provides approximately 10x increase in experimental throughput and up to 46x improvement in Ga2O3 substrate utilization. Appropriate growth conditions for monoclinic (InyGa1- y)2O3 are identified by machine learning analysis of RHEED patterns and targeted growths are characterized ex-situ to confirm improved In incorporation. These growth conditions are then combined with established (AlxGa1-x)2O3 growth conditions to grow quaternary (AlxGa1-x-yIny)2O3 with Al mole fractions ranging from 1.4% - 24.4% and In mole fractions ranging from 3.1% to 15.5%. The chemical and optical properties of the alloys are investigated by XRD, XPS, and spectroscopic ellipsometry. A lattice-matched (AlxGa1-x-yIny)2O3 alloy is examined by 4D-STEM and the chemical and physical uniformity of Al and In incorporation are discussed.

alloy↗