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Phase I Final Technical Report _ RDUSA

During Phase I of this proposal our team focused on meeting the goals proposed in the Phase I project which included identifying the integration approaches and fundamental materials properties (composition, bonding, defects, structure, doping, etc.) defining response to X-ray energies between 10-100KeV and sensitivity >100 μC Gyair-1 cm-2 in perovskite systems with formula CsPbX3 and CsPb2X5 [where X = chlorine (Cl), bromine (Br), iodine (I), or a combination of any of these elements] to enable high-efficiency, low-cost, X-ray detection systems. In the sections below, we summarize the research results that confirm the feasibility of our technical approach. In summary, we have demonstrated X-ray sensitivity >500 μC Gyair-1 cm-2 in the energy range of 10-100 keV using CsPbBr3 films of thicknesses ranging from 8 μm to 500 μm, which is above the technical requirements outlined in the call for proposal.

36 MATERIALS SCIENCE↗

Defect Engineering of WO 3 by Rapid Flame Reduction for Efficient Photoelectrochemical Conversion of Methane into Liquid Oxygenates

Photoelectrochemical (PEC) conversion is a promising way to use methane (CH 4 ) as a chemical building block without harsh conditions. However, the PEC conversion of CH 4 to value-added chemicals remains challenging due to the thermodynamically favorable overoxidation of CH 4 . Here, we report WO 3 nanotube (NT) photoelectrocatalysts for PEC CH 4 conversion with high liquid product selectivity through defect engineering. By tuning the flame reduction treatment, we carefully controlled the oxygen vacancies of WO 3 NTs. The optimally reduced WO 3 NTs suppressed overoxidation of CH4 showing a high total C1 liquid selectivity of 69.4% and a production rate of 0.174 μmol cm –2 h –1 . Scanning electrochemical microscopy revealed that oxygen vacancies can restrain the production of hydroxyl radicals, which, in excess, could further oxidize C1 intermediates to CO 2 . Additionally, band diagram analysis and computational studies elucidated that oxygen vacancies thermodynamically suppress overoxidation. In conclusion, this work introduces a strategy for understanding and controlling the selectivity of photoelectrocatalysts for direct conversion of CH 4 to liquids.

36 MATERIALS SCIENCE↗

The influence of lattice defects, recombination, and clustering on thermal transport in single crystal thorium dioxide

Thermal transport is a key controlling property for thorium dioxide in many applications where defect-generating radiation fields are present. An understanding of the effect of nanoscale lattice defects on thermal transport in this material is currently unavailable due to a lack of high-quality, single crystal material from which unit processes may be investigated. In this work, a series of thorium dioxide single crystals are exposed to 2 MeV proton irradiation at room temperature and 600°C to create microscale regions with varying densities and types of point and extended defects. Defected regions are investigated using spatial domain thermoreflectance to quantify the change in thermal conductivity as a function of ion fluence as well as transmission electron microscopy and Raman spectroscopy to interrogate the structure of the generated defects. Together, this com- bination of methods provides important initial insight into defect formation, recombination, and clustering in thorium dioxide and the effect of those defects on thermal transport. These methods also provide a promising pathway for the quantification of the smallest-scale defects which cannot be captured using traditional microscopy techniques and play and outsized role in degrading thermal performance.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Single versus successive pop-in modes in nanoindentation tests of single crystals

From recent nanoindentation experiments, two types of pop-in modes have been identified: a single pop-in with a large displacement excursion, or a number of pop-ins with comparable and small displacement excursions. Theoretical analyses are developed here to study the roles played by indenter tip radius, pre-existing defect density, heterogeneous nucleation source type, and lattice resistance on the pop-in modes. The evolution of dislocation structures in earlier pop-ins provides input to modeling a stochastic, heterogeneous mechanism that may be responsible for the subsequent pop-ins. It is found that when the first pop-in occurs near theoretical shear stress, the pop-in mode is determined by the lattice resistance and tip radius. When the first pop-in occurs at low shear stress, whether the successive pop-in mode occurs depends on how the heterogeneous dislocation nucleation source density increases as compared to the increase of the total dislocation density. Lastly, the above transitions are found to correlate well with the ratio of indenter tip radius to the mean spacing of dislocation nucleation sources.

36 MATERIALS SCIENCE↗

Atomic-Scale Structural Mapping of Active Sites in Monolayer PGM-Free Catalysts by Low-Voltage 4D-STEM

Two-dimensional (2D) materials have attracted a large amount of attention in both basic and applied fields, and scanning transmission electron microscopy (STEM) is often uniquely well-suited for characterizing the atomic-scale structure of these materials [1-4]. As a result, STEM is poised to significantly impact progress on platinum group metal (PGM)-free catalysts, which are currently under intense development to enable low-cost, commercially viable hydrogen fuel cells [5]. While recent advancements have resulted in fuel cell performance comparable to Pt catalysts by some measures [6], cell durability remains a significant challenge, limiting practical applications [7]. Catalytically active sites in PGM-free materials are proposed to be FeN4 complexes embedded in a graphene lattice (Fig. 1b) within layered or other larger materials, but this is still under debate largely due to the range of potential actives sites predicted by computational methods and lack of methods for directly validating these models [5]. Fundamental insights into the atomic structure and resulting degradation pathways of proposed active sites are therefore needed to fully understand and control cell performance and durability [6].2D materials typically make ideal samples for STEM, but those within PGM-free catalysts present additional challenges since these materials are often defect-rich, with a high density of edges, dopant atoms, etc., which significantly increase susceptibility to beam damage at standard operating voltages. This makes analysis of potential FeN4 active sites particularly challenging, since a large proportion of Fe exists at edge sites where beam-induced atomic displacements can prohibit high-resolution structural characterization [6]. Conventional dark-field imaging compounds this problem by producing less signal for a given dose and being less sensitive to light elements than dose-efficient phase contrast imaging techniques such as those enabled by four-dimensional (4D)-STEM [8-10] (Fig. 1a). Consequently, active site structural analysis is often left to methods such as low-resolution imaging combined with quantum chemical calculations [6], which hinders accurate determination of reaction and degradation mechanisms.Here, we demonstrate direct atomic-scale structural mapping of FeN4 sites by performing low-voltage 4D-STEM on a model PGM-free catalyst system with many exposed monolayer regions. To accomplish this, we pair a 30 keV aberration-corrected probe with a fast pixelated detector that has optimal performance at low beam voltages [11]. This enables us to simultaneously image light and heavy elements with high signal-to-noise by center-of-mass analysis (Fig. 1c) while minimizing beam-induced atomic displacements at sensitive sites. The monolayer nature of these materials additionally allows for experimental validation by direct comparison with multislice simulations [12] of model structures (Fig. 1d-e). This work demonstrates how low-voltage 4D-STEM will provide new insights into the atomic-scale structure and degradation mechanisms of active sites in PGM-free catalysts, facilitating the development of low-cost hydrogen fuel cells and other energy conversion technologies in the future [13].

Zachman, Michael↗

Tuning the magnetic anisotropy in CeRhIn 5 via Gd substitution

In strongly correlated materials, the presence of defects may fundamentally affect both macroscopic and microscopic properties of the system. Here we investigate the effect of Gd substitution in the Kondo antiferromagnet CeRhIn 5 . At a concentration of only 11% Gd, the magnetic anisotropy of CeRhIn 5 is drastically reduced at high temperatures, whereas its antiferromagnetic transition, T Ce N = 3.8 K, is linearly suppressed with Gd at low temperatures. Here, the extrapolation of T Ce N to zero temperature occurs at a critical concentration of x c ~ 0.63, which is above the two-dimensional percolation limit found in Ce 1–x La x RhIn 5 (x c ~ 0.4), but very close to the three-dimensional percolation limit found in Gd 1–x La x RhIn 5 and Ce 1–x La x In 3 (x c ~ 0.65), in agreement with the more isotropic magnetic response.

36 MATERIALS SCIENCE↗

A Charge-Separated State that Lives for Almost a Second at a Conductive Metal Oxide Interface

Transparent conductive oxides (TCOs) are widely used commercially available materials for opto-electronic applications, yet they have received very little attention for dye-sensitization applications. Now, mesoporous thin films of conductive indium-doped tin oxide (ITO) nanocrystallites are shown to support long-lived charge separation with first-order recombination kinetics (k=1.5 s -1 ). A layer-by-layer technique was utilized to spatially arrange redox and/or chromophoric molecular components on ITO. Spectroelectrochemical measurements demonstrated that upon light absorption, each component provided a free-energy gradient to direct electron transfer at the conductive oxide interface. The long-lived nature of the photogenerated charge separated states provide favorable conditions for photocatalytic solar fuel production. Furthermore, the first-order recombination kinetics are most ideal for the fundamental understanding of interfacial charge separation dynamics.

catalysis (heterogeneous)↗

Extending the density functional embedding theory to finite temperature and an efficient iterative method for solving for embedding potentials

A key element in the density functional embedding theory (DFET) is the embedding potential. We discuss two major issues related to the embedding potential: (1) its non-uniqueness and (2) the numerical difficulty for solving for it, especially for the spin-polarized systems. To resolve the first issue, we extend DFET to finite temperature: all quantities, such as the subsystem densities and the total system’s density, are calculated at a finite temperature. This is a physical extension since materials work at finite temperatures. We show that the embedding potential is strictly unique at T > 0. To resolve the second issue, we introduce an efficient iterative embedding potential solver. We discuss how to relax the magnetic moments in subsystems and how to equilibrate the chemical potentials across subsystems. The solver is robust and efficient for several non-trivial examples, in all of which good quality spin-polarized embedding potentials were obtained. We also demonstrate the solver on an extended periodic system: iron body-centered cubic (110) surface, which is related to the modeling of the heterogeneous catalysis involving iron, such as the Fischer-Tropsch and the Haber processes. This work would make it efficient and accurate to perform embedding simulations of some challenging material problems, such as the heterogeneous catalysis and the defects of complicated spin configurations in electronic materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Nanotesla Magnetometry with the Silicon Vacancy in Silicon Carbide

Silicon carbide is a promising host material for spin-defect-based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy is one of the leading spin defects studied in silicon carbide owing to its near-telecom photoemission, high spin number, and nearly temperature-independent ground-state zero-field splitting. We report the realization of nanotesla shot-noise-limited ensemble magnetometry based on optically detected magnetic resonance with the silicon vacancy in 4H silicon carbide. By coarsely optimizing the anneal parameters and minimizing power broadening, we achieve a sensitivity of 50 nT/√Hz and a theoretical shot-noise-limited sensitivity of 3.5 nT/√Hz. This is accomplished without utilizing complex photonic engineering, control protocols, or applying excitation powers greater than a watt. This work demonstrates that the silicon vacancy in silicon carbide provides a low-cost and simple approach to quantum sensing of magnetic fields.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Band or Polaron: The Hole Conduction Mechanism in the p-Type Spinel Rh 2ZnO4

Given the emerging role of oxide spinels as hole conductors, we discuss in this article the traditional vs. new methodologies of determining the type of conduction mechanism at play - localized polaronic vs. band-like transport. Applying (i) traditional small polaron analysis to our in-situ high temperature four-point conductivity and thermopower measurements, we previously found an activated mobility, which is indicative of the small polaron mechanism. However, (ii) employing the recent developments in correcting density functional methodologies for hole localization, we predict that the self-trapped hole is unstable and that Rh{sub 2}ZnO{sub 4} is instead a band conductor with a large effective mass. The hole mobility measured by high-field room temperature Hall effect also suggests band rather than polaron conduction. The apparent contradiction between the conclusion of the traditional procedure (i) and first-principles theory (ii) is resolved by taking into account in the previous transport analysis the temperature dependence of the effective density of states, which leads to the result that the mobility is actually temperature-independent in Rh{sub 2}ZnO{sub 4}. Our case study on Rh{sub 2}ZnO{sub 4} illustrates the range of experimental and theoretical approaches at hand to determine whether the transport mechanism of a semiconductor is band or small polaron conduction.

14 SOLAR ENERGY↗

Spatio-Kinetic Electronic Heterogeneity in MoS 2 Revealed by Ultrafast Electron Microscopy: Implications for Optoelectronics

There is broad interest in layered, two-dimensional (2D) semiconductors owing to their high optical absorption and ability to heterogeneously integrate with various substrates. In such layered semiconductors, mesoscopic imperfections, such as surface step edges, may affect charge carrier kinetics and device performance, but studying their effects on carrier transport with sufficient spatial and temporal resolution is a challenge. Using scanning ultrafast electron microscopy, we image the near-surface charge carrier kinetics with μm/ps spatiotemporal resolution in single-crystal MoS 2 samples with surface steps tens of nanometers in height. We find an approximately 3-fold increase in surface trap density near such surface steps compared to the uniform, flat surface regions. Despite the difference in trap state density, filling of the traps occurs over the same time scale (∼100 ps), but carrier recovery is much slower near the step compared to the uniform regions of the material. Furthermore, these results provide an approach to measure ultrafast dynamics and determine the required uniformity of layered materials depending on the speed limit constraints for specific applications.

SEM↗

Ion implantation of erbium into polycrystalline cadmium telluride

The specific features of the ion implantation of polycrystalline cadmium telluride with grains 20–1000 μm in dimensions are studied. The choice of erbium is motivated by the possibility of using rare-earth elements as luminescent “probes” in studies of the defect and impurity composition of materials and modification of the composition by various technological treatments. From the microphotoluminescence data, it is found that, with decreasing crystal-grain dimensions, the degree of radiation stability of the material is increased. Microphotoluminescence topography of the samples shows the efficiency of the rare-earth probe in detecting regions with higher impurity and defect concentrations, including regions of intergrain boundaries.

36 MATERIALS SCIENCE↗

Enhancing radiation tolerance by controlling defect mobility and migration pathways in multicomponent single-phase alloys

A grand challenge in material science is to understand the correlation between intrinsic properties and defect dynamics. Radiation tolerant materials are in great demand for safe operation and advancement of nuclear and aerospace systems. Unlike traditional approaches that rely on microstructural and nanoscale features to mitigate radiation damage, this study demonstrates enhancement of radiation tolerance with the suppression of void formation by two orders magnitude at elevated temperatures in equiatomic single-phase concentrated solid solution alloys, and more importantly, reveals its controlling mechanism through a detailed analysis of the depth distribution of defect clusters and an atomistic computer simulation. The enhanced swelling resistance is attributed to the tailored interstitial defect cluster motion in the alloys from a long-range one-dimensional mode to a short-range three-dimensional mode, which leads to enhanced point defect recombination. Finally, the results suggest design criteria for next generation radiation tolerant structural alloys.

36 MATERIALS SCIENCE↗

First principle study of magnetism and vacancy energetics in a near equimolar NiFeMnCr high entropy alloy

We report the results of ab initio calculations of a novel NiFeMnCr high entropy alloy (HEA) with potential applications as a high performance structural material. The bulk and defect property variations due to chemical disordering and magnetic frustration have been studied using both supercell and coherent potential approximation-based techniques. While magnetic frustration due to the presence of multiple 3d transition metals can severely affect the accuracy of vacancy formation energy in first-principles calculations, this effect should be suppressed at intermediate and high temperatures. An efficient approach to evaluate the chemical potential in HEA is constructed and implemented. Vacancy formation energies are computed based on the chemical potential. The statistical distribution of formation energies is weakly dependent upon the chemical identity of the vacancy. On the other hand, the calculated vacancy migration energies show that Fe is more likely to have a large migration barrier than Cr, Mn, or Ni. Finally, atomic-level stresses are computed. A qualitative model to explain the elemental segregation trend in HEA is built upon the atomic-level stress calculation results and provides a reasonable qualitative agreement with ion irradiation experimental data of a NiFeMnCr HEA.

36 MATERIALS SCIENCE↗

Autonomous Multistate Nanoencoding Using Combinatorial Ferroelectric Closure Domains in BiFeO 3

Recent advances in ferroic materials have identified topological defects as promising candidates for enabling additional functionalities in future electronic systems. The generation of stable and customizable polar topologies is needed to achieve multistates that enable beyond-binary device architectures. Here, in this study, we show how to autonomously pattern on-demand highly tunable striped closure domains in pristine rhombohedral-phase BiFeO 3 thin films through precise scanning of a biased atomic force microscopy tip along carefully designed paths. By employing this strategy, we generate and manipulate closed-loop structures with high spatial resolution in an automated manner, allowing the creation of highly tunable and intricate topological domain structures that exhibit distinct polarization configurations without the need for electrode deposition or complex heterostructure growth. As a proof-of-concept for ferroelectric beyond-binary memory devices, we use such topological domains as multistates, engineering an alphabet and automating the symbolic writing/reading process using autonomous microscopy. The resulting information density is compared with that of current commercially available memory devices, demonstrating the potential of ferroelectric topological domains for multistate information storage applications.

BiFeO3↗

Mixture-of-Experts for Multi-Domain Defect Identification in Non-Destructive Inspection

Composite materials are widely used in aircraft structures because of their superior mechanical properties. However, their complex failure modes require sophisticated inspection methods to ensure structural integrity. Ultrasonic testing (UT) is a common non-destructive inspection (NDI) technique for aircraft composites that can detect internal and external defects with high resolution and accuracy. Despite their effectiveness, traditional UT methods rely on the manual interpretation of ultrasonic signals, which is time-consuming, labor-intensive, and subjective. Furthermore, processing such large-scale data, particularly across materials of varying thicknesses, significantly increases the computational demands of deep learning model optimization. To overcome these challenges, we propose an efficient sparse mixture-of-experts (MoE) model with a multi-level loss function and introduce four novel training objectives to improve computational efficiency and accuracy in identifying surface defects in composite aircraft materials. Here, we evaluated our approach on material with multiple thicknesses or domains comprising various defects. Our experimental results demonstrate higher accuracy and F1-Score, with only 10% training epochs compared to baseline MoE.

composite materials↗

Divalent doping-induced thermoelectric power factor increase in p-type Bi 2 Te 3 via electronic structure tuning

We use first-principles calculations to reveal the effects of divalent Pb, Ca, and Sn doping of Bi 2 Te 3 on the band structure and transport properties, including the Seebeck coefficient, α, and the reduced power factor, α 2 σ/τ, where σ is the electrical conductivity and τ is the effective relaxation time. Pb and Ca additions exhibit up to 60%–75% higher peak α 2 σ/τ than that of intrinsic Bi 2 Te 3 with Bi antisite defects. Pb occupancy and Ca occupancy of Bi sites increase σ/τ by activating high-degeneracy low-effective-mass bands near the valence band edge, unlike Bi antisite occupancy of Te sites that eliminates near-edge valence states in intrinsic Bi 2 Te 3 . Neither Pb doping nor subatomic-percent Ca doping increases α significantly, due to band averaging. Higher Ca levels increase α and diminish σ, due to the emergence of a corrugated band structure underpinned by high-effective-mass bands, attributable to Ca–Te bond ionicity. Sn doping results in a distortion of the bands with a higher density of states that may be characterized as a resonant state but decreases α 2 σ by up to 30% due to increases in the charge carrier effective mass and decreases in both spin–orbit coupling and valence band quasidegeneracy. These results, and thermal conductivity calculations for nanostructured Bi 2 Te 3 , suggest that Pb or Ca doping can enhance the thermoelectric figure of merit ZT to values up to ZT ~ 1.7, based on an experimentally determined τ. Our findings suggest that divalent doping can be attractive for realizing large ZT enhancements in pnictogen chalcogenides.

36 MATERIALS SCIENCE↗

State switching kinetics for quasi-one-dimensional nanosystems: Effects of Finite length and irradiation

The state switching in an extended quasi-one-dimensional material is modeled by the stochastic formation of local new-state nuclei and their subsequent growth along the system axis. An analytical approach is developed to describe the influence of defects, dividing a sample into an ensemble of finite-length segments, on its state switching kinetics. As applied to magnetic systems, the method makes it possible to calculate magnetization curves for different defect concentrations and parameters of material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗