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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 1,549 records · Page 86
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Evolution of magnetism in the magnetic topological semimetal NdSb x Te 2–x+δ

Magnetic topological semimetals LnSbTe (Ln = Lanthanide) have attracted intensive attention because of the presence of interplay between magnetism, topological, and electron correlations depending on the choices of magnetic Ln elements. Recently, varying Sb-Te composition has been found to effectively control the electronic and magnetic states in LnSb x Te 2-x . Here, with this motivation, we report the evolution of magnetic properties with Sb-Te substitution in NdSb x Te 2-x+δ , (0 ≤ x ≤ 1). Our work reveals the interesting non-monotonic change in magnetic ordering temperature with varying composition stoichiometry. In addition, reducing the Sb content x drives the reorientation of moments from in-plane (ab-plane) to out-of-plane (c-axis) direction that results in the distinct magnetic structures for two end compounds NdTe 2 (x = 0) and NdSbTe (x = 1). Furthermore, the moment orientation in NdSb x Te 2-x+δ is also found to be strongly tunable upon application of weak magnetic field, leading to rich magnetic phases depending on the composition stoichiometry, temperature, and magnetic field. Such strong tuning of magnetism in this material establishes it as a promising platform for investigating tunable topological states and correlated topological physics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Tuning of strong nonlinearity in radio-frequency superconducting-quantum-interference-device meta-atoms

Strong nonlinearity of a self-resonant radio-frequency (rf) superconducting-quantum-interference-device (SQUID) meta-atom is explored via intermodulation (IM) measurements. Previous work in zero dc magnetic flux showed a sharp onset of IM response as the frequency sweeps through the resonance. A second onset at higher frequency was also observed, creating a prominent gap in the IM response. By extending those measurements to nonzero dc flux, different dynamics are revealed, including dc flux tunability of the aforementioned gaps and enhanced IM response near geometric resonance of the rf SQUID. These features observed experimentally are understood and analyzed theoretically through a combination of a steady-state analytical modeling and a full numerical treatment of the rf SQUID dynamics. The latter in addition predicts the presence of chaos in narrow parameter regimes. Here, the understanding of intermodulation in rf SQUID metamaterials is important for producing low-noise amplification of microwave signals and tunable filters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Spontaneous Valley Polarization of Interacting Carriers in a Monolayer Semiconductor

Here, we report magnetoabsorption spectroscopy of gated WSe 2 monolayers in high magnetic fields up to 60 T. When doped with a 2D Fermi sea of mobile holes, well-resolved sequences of optical transitions are observed in both σ ± circular polarizations, which unambiguously and separately indicate the number of filled Landau levels (LLs) in both K and K ' valleys. This reveals the interaction-enhanced valley Zeeman energy, which is found to be highly tunable with hole density p . We exploit this tunability to align the LLs in K and K ' , and find that the 2D hole gas becomes unstable against small changes in LL filling and can spontaneously valley polarize. These results cannot be understood within a single-particle picture, highlighting the importance of exchange interactions in determining the ground state of 2D carriers in monolayer semiconductors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Topological Phases in Graphene Nanoribbons Tuned by Electric Fields

Graphene nanoribbons (GNRs) possess distinct symmetry-protected topological phases. Here we show, through first-principles calculations, that by applying an experimentally accessible transverse electric field, certain boron and nitrogen periodically codoped GNRs have tunable topological phases. The tunability arises from a field-induced band inversion due to an opposite response of the conduction- and valence-band states to the electric field. With a spatially varying applied field, segments of GNRs of distinct topological phases are created, resulting in a field-programmable array of topological junction states, each may be occupied with charge or spin. Our findings not only show that electric field may be used as an easy tuning knob for topological phases in quasi-one-dimensional systems, but also provide new design principles for future GNR-based quantum electronic devices through their topological characters.

1-dimensional systems↗
DOE OSTI2024

Bidirectional Multiphoton Communication between Remote Superconducting Nodes

Quantum communication test beds provide a useful resource for experimentally investigating a variety of communication protocols. Here we demonstrate a superconducting circuit test bed with bidirectional multiphoton state transfer capability using time -domain shaped wave packets. Further, the system we use to achieve this comprises two remote nodes, each including a tunable superconducting transmon qubit and a tunable microwave -frequency resonator, linked by a 2 m-long superconducting coplanar waveguide, which serves as a transmission line. We transfer both individual and superposition Fock states between the two remote nodes, and additionally show that this bidirectional state transfer can be done simultaneously, as well as being used to entangle elements in the two nodes.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Correlating dynamic microstructure to observed color in electrophoretic displays via in situ small-angle x-ray scattering

Electrophoretic deposition (EPD) is an industrially relevant and scalable technique used to form particle deposits from colloidal suspensions. Highly concentrated particle suspensions generally prevent real-time in situ microscopy observations which limit the characterization of EPD films to ex situ, or postprocessed, laboratory techniques. For dynamic systems, such as tunable amorphous photonic crystals (APCs), only reversible deposits are formed during the EPD process. Since reversible deposits cannot be characterized with standard ex situ methods, the particle-particle and particle-field interactions that govern the displayed color and crystallinity of these systems are not well understood. In this paper, we present in situ small-angle x-ray scattering and UV-Vis techniques for measuring both the structural and optical response of an APC under applied electric fields. Furthermore, we also develop a computational model based on colloidal interactions to explain the observed change in the interparticle spacing of APCs due to the applied electric field which correlates to displayed color. Ultimately, this work provides a new in situ characterization method that could be expanded for other dynamic, tunable colloidal systems.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide

Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from 2.3 × 10 19 to 4.0 × 10 20 cm –3 and mobilities ranging from 300 to 400 cm 2 /Vs are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. In this work, optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Kondo effect and its destruction in heterobilayer transition metal dichalcogenides

Moiré structures, along with line-graph-based d -electron systems, represent a setting to realize flat bands. One form of the associated strong correlation physics is the Kondo effect. Here, we address the recently observed Kondo-driven heavy fermion state and its destruction in AB-stacked hetero-bilayer transition metal dichalcogenides, which can be controlled by the gate voltages. By studying an effective interacting Hamiltonian using the slave spin approach, we obtained a phase diagram with the total filling factor and the displacement field strength as the tunable parameters. In an extended range of the tunable displacement field, our numerical results show that the relative filling of the d orbital, which is associated with the highest moiré band from the MoTe 2 layer, is enforced to be ν d ≈ 1 by the interaction. This agrees with the experimental observation. We also argue that the observed high coherence temperature scale could be explained by the non-negligible bandwidth of the d orbital. Our results set the stage to address the amplified quantum fluctuations that the Kondo effect may produce in these structures and new regimes that the systems open up for Kondo-destruction quantum criticality. Published by the American Physical Society 2024

Xie, Fang (ORCID:000000021327767X)↗
DOE OSTI2025

Twist Engineering of Anisotropic Excitonic and Optical Properties of a Two-Dimensional Magnetic Semiconductor

Two-dimensional (2D) van der Waals (vdW) magnetic semiconductors are a new class of quantum materials for studying the emergent physics of excitons and spins in the 2D limit. Twist engineering provides a powerful tool to manipulate the fundamental properties of 2D vdW materials. Here, in this work, we show that twist engineering of the anisotropic ferromagnetic monolayer semiconductor CrSBr leads to bilayer magnetic semiconductors with continuously tunable magnetic moment, dielectric anisotropy, exciton energy, and linear dichroism. We furthermore provide a model for exciton energy in the media with tunable anisotropy. These results advance fundamental studies of 2D vdW materials and open doors to applications to nano-optics, twistronics, and spintronics.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Boosting the Performance of Plug-and-Play Priors via Denoiser Scaling

Plug-and-play priors (PnP) is an image reconstruction framework that utilizes an image denoiser as an imaging prior. Unlike traditional regularized inversion, PnP does not require the prior to be expressible in the form of a regularization function. This flexibility enables PnP algorithms to exploit the most effective image denoisers, leading to their state-of-the-art performance in various imaging tasks. However, many powerful denoisers, such as the ones based on convolutional neural networks (CNNs), do not have tunable parameters that would allow controlling their influence within PnP. To address this issue, in this paper, we introduce a scaling parameter that adjusts the magnitude of the denoiser input and output. We theoretical justify the denoiser scaling from the perspectives of proximal optimization, statistical estimation, and consensus equilibrium. Finally, we provide numerical experiments demonstrating the ability of denoiser scaling to systematically improve the performance of PnP for denoising CNN priors that do not have explicitly tunable parameters.

Boosting↗
DOE OSTI2020

Systematic Crosstalk Mitigation for Superconducting Qubits via Frequency-Aware Compilation

One of the key challenges in current Noisy Intermediate-Scale Quantum (NISQ) computers is to control a quantum system with high-fidelity quantum gates. There are many reasons a quantum gate can go wrong - for superconducting transmon qubits in particular, one major source of gate error is the unwanted crosstalk between neighboring qubits due to a phenomenon called frequency crowding. We motivate a systematic approach for understanding and mitigating the crosstalk noise when executing near-term quantum programs on superconducting NISQ computers. Here, we present a general software solution to alleviate frequency crowding by systematically tuning qubit frequencies according to input programs, trading parallelism for higher gate fidelity when necessary. The net result is that our work dramatically improves the crosstalk resilience of tunable-qubit, fixed-coupler hardware, matching or surpassing other more complex architectural designs such as tunable-coupler systems. On NISQ benchmarks, we improve worst-case program success rate by 13.3x on average, compared to existing traditional serialization strategies.

Computer architecture↗
DOE OSTI2024

A Broadband Mechanically Tuned Superconducting Cavity Design Suitable for the Fermilab Main Injector

Radio Frequency superconductivity has been a mainstay of accelerator science for decades. However, its benefits have yet to be applied to proton synchrotrons with demanding tuning requirements. For example, the Main Injector (MI), Fermilab's high-energy proton synchrotron, currently utilizes 20+ ferrite-loaded cavities for a targeted 1.2 s acceleration cycle. Harnessing the extremely high gradients associated with superconductivity, the required number of cavities could be reduced by an order of magnitude, dramatically lowering operational power requirements even with cryogenic considerations. Additionally, the current plans for the Fermilab accelerator complex evolution initiative involve almost doubling the number of cavities in MI if the same designs are to be used, further highlighting the potential benefits of superconductivity. These advantages are attractive, but to date, no tunable superconducting cavity suitable for MI has been proposed due to the incompatibility of conventional broadband tuning methods with superconductivity. Here, we present a tunable superconducting cavity concept capable of record-breaking performance. Tuning will be accomplished by using high-speed linear actuators to vary the insertion depth of metallic plungers into the cavity volume. This tuning concept is theoretically viable with currently available technology and will be fully compatible with a superconducting cavity.

43 PARTICLE ACCELERATORS↗
DOE OSTI2021

Modulating the optoelectronic properties of hybrid Mo-thiolate thin films

In this study, hybrid MoS 2 -based molybdenum thiolate thin films with selected organic motifs are grown using molecular layer deposition (MLD), allowing for tunable optoelectronic film properties. The thin films are deposited at 170°C using the metal precursor molybdenum hexacarbonyl and one of the three organic precursors: 1,2-ethanedithiol, 1,4-butanedithiol, and 1,4-benzenedithiol. The resulting Mo-ethanethiolate, Mo-butanethiolate, and Mo-benzenethiolate films show saturating growth with a growth per cycle of 1.2, 1.0, and 1.5 Å/cycle, respectively. Fourier transform infrared spectroscopy, x-ray photoelectron spectroscopy, Raman spectroscopy, x-ray absorption spectroscopy, and x-ray diffraction are used to characterize the as-deposited films. Results show that by changing the organic precursor, the film composition as well as the optical and electronic properties can be tuned. The Mo-thiolate films grown with benzenedithiol exhibit the lowest resistivity, which at 12 mΩ cm is ~400 times more conductive than Mo-thiolates grown with aliphatic organic linkers. All three backbone chemistries of the Mo-thiolates show an optical bandgap between 2.3 and 2.4 eV and mild photoconductivity response. The MLD of these Mo-thiolate films demonstrates the synthesis of transition metal-organosulfur thin films with tunable properties.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Simple thermal vapor deposition process for and characterization of n-type indium oxysulfide thin films

The search continues for alternative nontoxic n-type electron transport layers in optoelectronic thin-film devices. Indium oxysulfide, In 2 (O,S) 3 , represents one promising material for this application, especially when paired with chalcogenide absorber layers. The ternary nature of the composition allows for electrical conductivity and optical bandgap tuning by tailoring the sulfur to oxygen ratio in the oxysulfide alloy. However, thin films of In 2 (O,S) 3 are typically deposited only by chemical bath deposition or plasma-enhanced atomic layer deposition. Here we report deposition of thin films of In 2 (O,S) 3 in a custom-built thermal reactor using only water vapor and hydrogen sulfide as the coreactants. This advance is enabled by the use of a recently reported, highly reactive indium formamidinate precursor. As shown by x-ray photoelectron spectroscopy, the composition can be tuned from pure In 2 (O,S) 3 to pure In 2 S 3 by varying the ratio of cycles employing water or hydrogen sulfide. The oxygen to the sulfur ratio in the film can be controlled by altering the dose sequence, although films typically contain more sulfur than would be expected naively from the percentage of hydrogen sulfide doses in the deposition recipe. Rutherford backscattering spectrometry confirms the composition is sulfur-rich relative to the dosing ratio. Structural characterization indicates films are relatively amorphous in nature. Electrically, these films offer reasonably constant electron mobility at different O:S ratios, with an electron concentration tunable over 4 orders of magnitude. These oxysulfide films possess a higher indirect bandgap than their oxygen-free indium sulfide counterparts, indicating higher transmittance to blue light. These indium oxysulfide films may be suitable candidates for electron transport layers in thin-film solar cells where their wider bandgap might result in higher optical transparency and thus short circuit current density, while the tunability of their conduction band offset with an absorber layer may result in higher open circuit voltage.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2020

Electric-field control of spin dynamics during magnetic phase transitions

Controlling magnetization dynamics is imperative for developing ultrafast spintronics and tunable microwave devices. However, the previous research has demonstrated limited electric-field modulation of the effective magnetic damping, a parameter that governs the magnetization dynamics. Here, we propose an approach to manipulate the damping by using the large damping enhancement induced by the two-magnon scattering and a nonlocal spin relaxation process in which spin currents are resonantly transported from antiferromagnetic domains to ferromagnetic matrix in a mixed-phased metallic alloy FeRh. This damping enhancement in FeRh is sensitive to its fraction of antiferromagnetic and ferromagnetic phases, which can be dynamically tuned by electric fields through a strain-mediated magnetoelectric coupling. In a heterostructure of FeRh and piezoelectric PMN-PT, we demonstrated a more than 120% modulation of the effective damping by electric fields during the antiferromagnetic-to-ferromagnetic phase transition. Our results demonstrate an efficient approach to controlling the magnetization dynamics, thus enabling low-power tunable electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Controlling and visualizing Dirac physics in topological semimetal heterostructures

A bulk crystal of cadmium arsenide is a three-dimensional Dirac semimetal, but, in a thin film, it can behave like a three-dimensional topological insulator. This tunability provides unique opportunities to manipulate and explore a topological insulator phase. However, an obstacle to engineering such tunability is the subtlety of transport-based discriminants for topological phases. In this work, the quantum capacitance of cadmium arsenide–based heterostructures provides two direct experimental signatures of three-dimensional topological insulator physics: an insulating three-dimensional bulk and a Landau level at zero energy that does not disperse in a magnetic field. We proceed to join our ability to see these fingerprints of the topological surface states with flexibility afforded by our epitaxial heterostructures to demonstrate a route toward controlling the energy of the Dirac nodes on each surface. These results point to new avenues for engineering topological insulators based on cadmium arsenide.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Chiral flat-band optical cavity with atomically thin mirrors

A fundamental requirement for photonic technologies is the ability to control the confinement and propagation of light. Widely used platforms include two-dimensional (2D) optical microcavities in which electromagnetic waves are confined in either metallic or distributed Bragg reflectors. Recently, transition metal dichalcogenides hosting tightly bound excitons with high optical quality have emerged as promising atomically thin mirrors. In this work, we propose and experimentally demonstrate a subwavelength 2D nanocavity using two atomically thin mirrors with degenerate resonances. Angle-resolved measurements show a flat band, which sets this system apart from conventional photonic cavities. We demonstrate how the excitonic nature of the mirrors enables the formation of chiral and tunable optical modes upon the application of an external magnetic field. Moreover, we show the electrical tunability of the confined mode. Our work demonstrates a mechanism for confining light with high-quality excitonic materials, opening perspectives for spin-photon interfaces, and chiral cavity electrodynamics.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Multifunctional electrochemical memory stabilized by phase coexistence

Our growing computing needs, especially in applications that heavily rely on artificial intelligence (AI), motivate a search for new components that could substantially augment the performance of general-purpose digital computers. Beyond ON/OFF switching, new components with linear multistate analog resistive tuning, nonlinear volatile switching, spiking, oscillatory, stochastic and other complex functionalities could enable highly efficient neuromorphic computing schemes for AI information processing. Compared to the extreme multifunctionality of biological neurons, realizing all the above characteristics in a single, scalable analog component remains a grand challenge. Here we investigate electrochemical gating combined with localized thermal activation to program and switch a single, vertically integrated and dimensionally scaled electrothermal chemical random access memory (ETCRAM) with a channel and reservoir composed of phase-separated vanadium oxide. Closely related to electrochemical RAM (ECRAM), ETCRAM uses an integrated gate-heater electrode to overcome kinetic barriers that help retain states at ambient temperatures. In addition to synapse-like stable and programmable analog resistance states arising from redox-tunable phase coexistence, a single component exhibits neuron-like nonlinear conductance switching with a tunable threshold and self-driven dynamics owing to the thermally driven metal-insulator phase transition in vanadium dioxide. More broadly, we demonstrate that electrochemically stabilized phase coexistence could unlock analog electronics with novel functionality, stability, reconfigurability, and scalability.

Oh, Sangheon [Sandia National Lab. (SNL-CA), Liver↗