SEARCH · Engineering Papers
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Technique of producing silicon sheets by drawing gridlike or porous graphite gauze through silicon melt is readily adaptable to mass production, making process applicable to inexpensive manufacture of solar cell arrays.
An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.
Modifications in inverted Stepanov process improve heat transfer and energy efficiency in growing silicon ribbon crystals. Using system, silicon is directly heated by induction, minimizing heat transfer and contamination problems.
Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.
Consideration is given to the Si contents of Fe-Ni grains in highly unequilibrated chondrites, which have undergone little metamorphosis and thus best preserve the record of processes in the solar nebula. Electron microprobe determinations of silicon content in grains of the Bishunpur chondrite are presented for the six Si-bearing Fe-Ni grains for which data could be obtained, five of which were found to be embedded in olivine chondrules. In addition, all grains are found to be Cr-rich, with Cr increased in concentration towards the grain edge, and to be encased in FeS shells which evidently preserved the Si that entered the FeNi at higher temperatures. A mechanism for the production of Si-bearing metal during the condensation of the cooling solar nebula is proposed which considers the metal to have condensed heterogeneously while the mafic silicates condensed homogeneously with amounts of required undercooling in the low-pressure regions where ordinary and carbonaceous chondrites formed, resulting in Si mole fractions of 0.003 at nebular pressures less than 0.000001 atm.
We report here progress in a program designed to examine the feasibility of large scale production of low-cost silicon sheet substrates for solar cells by the EFG process. A multiple-ribbon EFG station, containing five single-ribbon cartridges, has been continuously operated for a period of 15 hours at a duty cycle of 94%. The average width of the ribbon grown was 5 cm, and the average growth speed was 3.4 cm/min. The cartridge concept of ribbon growth has been extended to successfully grow 10 cm wide ribbon at speeds up to 4 cm/min. Large area (approximately 50 sq cm) solar cells with efficiencies in the range from 8% to 11% (AM1) have been made from ribbon grown in the cartridge systems.
The processing of materials in a low-gravity (low-g) or microgravity environment is investigated by NASA for scientific and commercial utilization, and process and product development. The elimination of gravity is shown to create unique materials, and improve ground-based processes, such as convection, sedimentation, buoyancy, and containerless processing. Commercial applications are discussed, including the manufacturing of silicon ribbon, turbine blades, and various pharmaceuticals in space. Commercial incentives and needs are also discussed, including the technical exchange agreement, in which NASA and a company agree to cooperate in the conduct and analysis of research programs. In addition to establishing and demonstrating scientific and technological precepts for analyzing and using low-g environments, NASA is establishing legal and management mechanisms to share cost and risk of early commercial ventures.
Silicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.
Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.
This paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.
The Five Year Research Plan energy cost methodology and in depth analyses based on the extensive data that are relevant to PV systems are used to facilitate the accomplishment of the $0.15/kWh energy cost goal. An equation is given for the five year energy cost methodology. The allocation guidelines are designed to be consistent with flat solar array (FSA) milestones for module cost, module efficiency, and the programmatic goal for energy cost. They are research targets that appear to be achievable, given prior accomplishments and planned activities in the areas of low cost silicon purification, low cost sheet material, high efficiency cell processing, low cost, long life encapsulants, and automated fabrication method. Extensive sensitivity analysis work has been performed that shows that these guidelines represent an efficient way to meet the intent of the DOE program.
An analysis of stress-strain relationships in silicon ribbon is presented. A model to present entire process, dynamical Transit Analysis is developed. It is found that knowledge of past-strain history is significant in modeling activities.
Impurities detected nondestructively during processing. In proposed system, surface of growing amorphous-silicon film monitored by ellipsometer at wavelength or combination of wavelengths at which impurity or impurities of interest absorb light strongly.
Study of dendritic-web growth of single-crystal silicon casts doubts on previously accepted physical concepts of process.
The refrigeration of superconductors in space poses a challenging problem. The problem could be less severe if superconducting materials would not have to be cooled when not in use. Thin films of the YBa2Cu3O(7-x) (YBCO) superconductor were subjected to thermal cycling, which was carried out to simulate a large number of eclipses of a low earth orbit satellite. Electrical measurements were performed to find the effect of the temperature cycling. Thin films of YBCO were formed by coevaporation of Y, BaF2, and Cu and postannealing in wet oxygen at 850 C for 3.5 h. The substrates used were (100) SrTiO3, polycrystalline alumina, and oxidized silicon; the last two have an evaporated zirconia layer. Processing and microstructure studies of these types of films have been published. THe zero resistance transition temperatures of the samples used in this study were 91, 82, and 86 K, respectively. The samples were characterized by four point probe electrical measurements as a function of temperature. The parameters measured were: the zero resistance transition temperature, the 10 to 90 percent transition width, and the room temperature resistance, normalized to that measured before temperature cycling. The results for two samples are presented. Each sample had a cumulative exposure. Cycling in atmospheric pressure nitrogen was performed at a rate of about 60 cycles per day, whereas in vacuum the rate was only about 10 cycles per day. The results indicate only little or no changes in the parameters measured. Degradation of superconducting thin films of YBCO has been reported due to storage in nitrogen. It is believed that the relatively good performance of films after temperature cycling is related to the fact that BaF2 was used as an evaporation source. The latest result on extended temperature cycling indicates significant degradation. Further tests of extended cycling will be carried out to provide additional data and to clarify this preliminary finding.
It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.
The Office of Commercial Programs (OCP), working in conjunction with NASA engineers at the Goddard Space Flight Center, is supporting research efforts in robot technology and microelectronics materials processing that will provide many spinoffs for science and industry. The Telerobotic Materials Processing Experiment (TRMPX) is a Shuttle-launched materials processing test payload using a Get Away Special can. The objectives of the project are to define, develop, and demonstrate an automated materials processing capability under realistic flight conditions. TRMPX will provide the capability to test the production processes that are dependent on microgravity. The processes proposed for testing include the annealing of amorphous silicon to increase grain size for more efficient solar cells, thin film deposition to demonstrate the potential of fabricating solar cells in orbit, and the annealing of radiation damaged solar cells.
Further improvements in the performance of integrated electronics will eventually halt due to practical fundamental limits on our ability to downsize transistors and interconnect wiring. Avoiding these limits requires a revolutionary approach to switching device technology and computing architecture. Nanoelectronics, the technology of exploiting physics on the nanometer scale for computation and communication, attempts to avoid conventional limits by developing new approaches to switching, circuitry, and system integration. This presentation overviews the basic principles that operate on the nanometer scale that can be assembled into practical devices and circuits. Quantum resonant tunneling (RT) is used as the center-piece of the overview since RT devices already operate at high temperature (120 degrees C) and can be scaled, in principle, to a few nanometers in semiconductors. Near- and long-term applications of GaAs and silicon quantum devices are suggested for signal and information processing, memory, optoelectronics, and radio frequency (RF) communication.