NASA NTRS · 19840047356
Ion implanted junctions for silicon space solar cells
Abstract
This paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.
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Spitzer, M. B., Sanfacon, M. M., Wolfson, R. G.. 1983-01-01. Ion implanted junctions for silicon space solar cells. https://ntrs.nasa.gov/citations/19840047356
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