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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 145 records · Page 8
All sourcesNASA NTRSDOE OSTI
NASA NTRS1971

Adavanced RTG and thermoelectric materials study

A comprehensive, generalized two-dimensional RTG analysis computer program was developed. This program is capable of analyzing any specified RTG design under a wide range of transient as well as steady-state operating conditions. The feasibility of a new concept for the design of segmented (or single-phase) thermoelectric couples was demonstrated. A SiGe-PbTe segmented couple involving pressure contacted junctions at the intermediate- and hot-junction temperatures was successfully encapsulated in a hermetically sealed bellows enclosure. This bellows-encapsulated couple was operated between a hot- and cold-junction temperature of 1200 K and 450 K, respectively, with a measured energy conversion efficiency of 7.6 + or - .5 per cent. An experimental study of selected sublimation barrier schemes revealed that a significant reduction in the sublimation rate of p-type PbTe could be achieved by using multiple layers of SiO2 fibers. A comparison of the barrier effectiveness is given for three different barrier designs.

Eggers, P. E.↗
NASA NTRS1972

Short-time oxidation of zirconium.

Study of zirconium oxidation kinetics for maximum exposure times of 3 min and in the temperature range 440 to 850 C. 'Discontinuous' oxidation runs were employed whereby a specimen was inserted into the gas stream for a predetermined time, removed and weighed, and reinserted into the oxidation atmosphere. It is considered that the increase in the observed activation energy for the early stage parabolic oxidation is a manifestation of a change from an n-type oxide to a predominantly p-type oxide, in agreement with the authors' earlier conclusion (1971) based on pressure effects.

Srivastava, L. P.↗
NASA NTRS1974

GaAs transistors formed by Be or Mg ion implantation

N-p-n transistor structures have been formed in GaAs by implanting n-type substrates with Be ions to form base regions and then implanting them with 20-keV Si ions to form emitters. P-type layers have been produced in GaAs by implantation of either Mg or Be ions, with substrate at room temperature, followed by annealing at higher temperatures.

Hunsperger, R. G.↗
NASA NTRS1972

High sensitivity infrared 10.6 micrometer heterodyne receiver development

The results are presented for a study on the design of an infrared 10.6-micrometer quantum-noise-limited optical receiver subsystem. Performance measurements of the HgCdTe photomixer preamplifier combination were carried out for photomixer temperatures up to 152 K and a photomixer frequency response of up to 420 MHz was obtained. Results of temperature and bias cycling of HgCdTe photomixers are reported. Design considerations for an operational 10.6 micrometer heterodyne receiver are presented. These consist of design data on required laser LO illumination, heat load levels for photomixer cooler, photomixer uniformity and the effects of photomixer impedance match on receiver sensitivity. Analysis and measurements of 10.6 micrometer heterodyne detection in an extrinsic photoconductive (p-type) HgCdTe photomixer are also presented.

Source record↗
NASA NTRS1973

Compact thermoelectric converter systems technology

A schematic of the developed tubular thermoelectric module is shown. It consists of alternate washers of n- and p-type lead telluride, separated by thin natural mica washers. Electrical continuity within the circuit is accomplished by cylindrical conductor rings located at the I.D. and O.D. of the lead telluride washers. The conductor rings are also separated by the same mica which separate the lead telluride washers. The result is a radially serpentine current path along the length of the module. The circuit is isolated from the structural claddings by thin sleeves of boron nitride. Circuit containment and heat transfer surfaces are provided by the inner and outer cladding, heat being transferred from a heat source at the inner clad, conducted radially outward through the lead telluride to the outer clad where the waste heat is removed by a heat rejection system.

Source record↗
NASA NTRS1973

Life testing of a nine-couple hybrid thermoelectric panel

Life test data are presented for a nine couple thermoelectric panel of hybrid couples tested at an average hot junction temperature of 840 C (1113 K). In the hybrid couple, a hollow cylinder of p-type Si-Ge is used to encapsulate a segmented PbTe/Si-Ge n-leg. The output power and internal resistance of the panel as well as the resistances of the individual hybrid couples are presented as functions of test time covering a period of more than 4200 hours. Test results indicated improved stability relative to hybrid couples tested at higher temperatures. Thermal cycling of the panel resulted in an order of magnitude increase in room temperature resistance. However, very little change in resistance at operating temperatures was noted following the thermal cycles.

Bifano, W. J.↗
NASA NTRS1972

Mobility in single crystal Bi2Se3.

Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 tesla. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with approximately 10 to the 25th power per cu m 3 total carrier concentration.

Woollam, j. A.↗
NASA NTRS1972

Hybrid TE panel test results.

Test results are presented for a nine couple (3 x 3 array) thermoelectric panel of hybrid thermocouples. In the hybrid couple, a hollow cylinder of p-type Si-Ge is used to encapsulate a segmented PbTe/Si-Ge n-leg. The hybrid couple is predicted to offer a 10 to 15% improvement in performance relative to all Si-Ge couples. The efficiency, output power, and internal resistance of the panel, as well as the resistances of the individual hybrid couples, are presented as a function of test time covering a period of more than 2600 hours. Initial test results indicated hybrid couple performance consistent with design predictions. However, the 10 to 15% improvement over all-Si-Ge couples demonstrated initially by the hybrid couple was offset by the high resistance that developed following a thermal cycle due to heater failure after 600 hours of testing.

Bifano, W. J.↗
NASA NTRS1972

Development of a (Hg, Cd)Te photodiode detector, Phase 2

High speed sensitive (Hg,Cd)Te photodiode detectors operating in the 77 to 90 K temperature range have been developed for the 10.6 micron spectral region. P-N junctions formed by impurity (gold) diffusion in p-type (Hg, Cd) Te have been investigated. It is shown that the bandwidth and quantum efficiency of a diode are a constant for a fixed ratio of mobility/lifetime ratio of minority carriers. The minority carrier mobility and lifetime uniquely determine the bandwidth and quantum efficiency and indicate the shallow n on p (Hg,Cd) Te diodes are preferable as high performance, high frequency devices.

Source record↗
NASA NTRS1974

Gravitational effects of process-induced dislocations in silicon

Matters pertaining to semiconductor device fabrication were studied in terms of the influence of gravity on the production of dislocations in silicon wafers during thermal cycling in a controlled ambient where no impurities are present and oxidation is minimal. Both n-type and p-type silicon wafers having a diameter of 1.25 in to 1.5 in, with fixed orientation and resistivity values, were used. The surface dislocation densities were measured quantitatively by the Sirtl etch technique. The results show two significant features of the plastic flow phenomenon as it is related to gravitational stress: (1) the density of dislocations generated during a given thermal cycle is directly related to the duration of the cycle; and (2) the duration of the thermal cycle required to produce a given dislocation density is inversely related to the equilibrium temperature. Analysis of the results indicates that gravitational stress is instrumental in process-induced defect generation.

Porter, W. A.↗
NASA NTRS1973

Excess junction current of silicon solar cells

The current-voltage characteristics of n(plus)-p silicon solar cells with 0.1, 1.0, 2.0, and 10 ohm-cm p-type base materials have been examined in detail. In addition to the usual I-V measurements, we have studied the temperature dependence of the slope of the I-V curve at the origin by the lock-in technique. The excess junction current coefficient (Iq) deduced from the slope at the origin depends on the square root of the intrinsic carrier concentration. The Iq obtained from the I-V curve fitting over the entire forward bias region at various temperatures shows the same temperature dependence. This result, in addition to the presence of an aging effect, suggest that the surface channel effect is the dominant cause of the excess junction current.

Wang, E. Y.↗
NASA NTRS1974

Growth of silicon ribbon by edge-defined, film-fed growth

Recent advances in the application of the edge-defined, film-fed growth (EFG) method to silicon ribbon are described. Ribbons up to 2 x 40 cm and 1 x 70 cm in width and length, respectively, have been grown at rates of 1 to 2.5 cm/min. The electrical properties of typical undoped ribbons are resistivity of 0.5 to 5 ohm-cm p-type, and hole mobility of 200 to 350 sq cm/V-sec. Ribbon growth speeds are consistent with the use of EFG silicon for terrestrial power.

Bates, H. E.↗
NASA NTRS1974

Inversion layer solar cell fabrication and evaluation

Inversion layer solar cells have been fabricated by etching through the diffused layer on p-type silicon wafers in a comb-like contact pattern. The charge separation comes from an induced p-n junction at the surface. This inverted surface is caused by a layer of transparent material applied to the surface that either contains free positive ions or that creates donor states at the interface. Cells have increased from 3 ma Isc to 100 ma by application of sodium silicate. The action is unstable, however, and decays with time.

Call, R. L.↗
NASA NTRS1974

Inversion layer solar cell fabrication and evaluation

Inversion layer solar cells were fabricated by etching through the diffused layer on p-type silicon wafers in a comb-like contact pattern. The charge separation comes from an induced p-n junction at the surface. The inverted surface is caused by a layer of transparent material applied to the surface that either contains free positive ions or that creates donor states at the interface. Cells are increased from 3 ma I sub sc to 100 ma by application of sodium silicate. The action is unstable, however, and decays. Non-mesa contaminated oxide cells were fabricated with short circuit currents of over 100 ma measured in the sun. Cells of this type have demonstrated stability.

Call, R. L.↗
NASA NTRS1975

The time and temperature dependence of the thermoelectric properties of silicon-germanium alloy

Experimental data on the electrical resistivity and Seebeck coefficient of n-type and p-type silicon-germanium alloys are analyzed in terms of a solid-state dopant precipitation model proposed by Lifshitz and Slyozov (1961). Experimental findings on the time and temperature dependence of the thermal conductivity of these two types of alloy indicate that the thermal conductivity of silicon-germanium alloys changes with time, contrary to previous hypothesis. A preliminary model is presented which stipulates that the observed thermal conductivity decrease in silicon-germanium alloys is due partly to dopant precipitation underlying the electrical property changes and partly to enhanced alloying of the material. It is significant that all three properties asymptotically approach equilibrium values with time. Total characterization of these properties will enable the time change to be fully compensated in the design of a thermoelectric device employing silicon-germanium alloys.

Raag, V.↗
NASA NTRS1975

High efficiency graded band-gap Al/x/Ga/1-x/As-GaAs p-on-n solar cell

A theoretical analysis of p-on-n (p/n) graded band-gap Al/x/Ga/1-x/As-GaAs solar cells including all practical energy loss mechanisms predicts air mass zero efficiencies of 17.3%. The energy losses include those due to spectral reflection, surface, bulk and junction recombination currents, and series resistance. The device consists of a layer of p-type Al/x/Ga/1-x/As 3.5-micron thick on top of an n-type GaAs substrate. The graded band-gap is achieved by decreasing x from 0.35 at the surface to zero at the junction. The same structure without the graded Al concentration, no longer an optimum device, has an efficiency of 10.4%. The primary function of the graded band-gap material is the reduction of surface and bulk recombination losses in the surface layer by a built-in electric field. A comparison of the p/n structure with an optimized n/p structure indicates that the latter has a slightly higher efficiency (17.7%) for assumed minority carrier diffusion lengths and surface recombination velocity.

Hutchby, J. A.↗
DOE OSTI2024

Optical Modeling of Polysilicon: TOPCon PV

Determine how film thickness changes with different deposition methods. Analyze relationship between film thickness and optical constants. The deposition rate of intrinsic polysilicon is higher during initial deposition then begins to slow down as deposition time increases. Longer depositions of polysilicon are more crystalline in structure than shorter depositions. N-type doping of polysilicon is more crystalline in structure than p-type doping, despite similar film thicknesses.

Bruggeman effective media approximation↗
DOE OSTI2025

Hierarchical Hybrid Multifunctional Materials through Interface Engineering

This project focuses on the development of stimuli-responsive hybrid multifunctional materials. We place emphasis on the design, synthesis, structural characterization, evaluation of functional properties (electronic, thermal and optical) of several (1-x)Cu 2 Se/(x)WBGS hierarchical bulk composites between Cu 2 Se, a narrow band gap semiconductor (NBGS), with a range of wider band gap semiconductors (WBGS) such as CuMSe 2 (M = Al, Ga, In, Fe, Cr) and Cu 4 TiSe 4 . Cu2Se is a well-studied NBGS with excellent thermoelectric properties (high electrical conductivity, large thermopower, etc.) while CuMSe 2 and Cu 4 TiSe 4 are high performance solar absorber materials (large band gap, large absorption coefficient, etc.). Our primary objectives are (i) to demonstrate the ability to integrate dissimilar functional properties such as large optical absorption coefficient and high electronic conductivity, within (1-x)Cu 2 Se/(x)WBGS composite; and (ii) to establish the correlation between the hierarchical structural entanglement of Cu 2 Se with WBGS (CuMSe 2 or Cu 4 TiSe 4 ) phase, the interactions between native electronic defects within the coexisting phases in the resulting (1-x)Cu 2 Se/(x)WBGS bulk composites , and the impacts on their electronic conductivity, thermal transport and optical properties.

36 MATERIALS SCIENCE↗