NASA NTRS · 19730032939
Mobility in single crystal Bi2Se3.
Abstract
Galvanomagnetic effects are measured in p-type Bi2Se3 in magnetic fields to 8 tesla. Both Hall and conductivity mobilities are determined between 4.2 and 300 K. Carrier compensation, as well as nearly equal electron and hole mobilities are found in samples with approximately 10 to the 25th power per cu m 3 total carrier concentration.
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Woollam, j. A., Beale, H., Spain, I. L.. 1972-10-09. Mobility in single crystal Bi2Se3.. https://ntrs.nasa.gov/citations/19730032939
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