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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Possibility of shocks from leakage currents can be reduced by use of isolated preamplifiers. Amplifier consists of battery-powered operational amplifier coupled by means of light-emitting diodes to another amplifier which may be grounded and operated from ac power mains or separate battery supply.
The electrical resistivities were investigated of some polymers known to be enhanced by the presence of certain gases. This was done to make a device capable of providing early warning to fire through its response with the gases produced in the early phases of combustion. Eight polymers were investigated: poly(phenyl acetylene), poly(p-aminophenyl acetylene), poly(p-nitrophenyl acetylene), poly(p-formamidophenyl acetylene), poly(ethynyl ferrocene), poly(ethynyl carborane), poly(ethynyl pyridine), and the polymer made from 1,2,3,6 tetramethyl pyridazine. A total of 40 usable thin-film sandwich devices and a total of 70 usable interdigitated-electrode lock-and-key devices were fabricated. The sandwich devices were used for measurements of contact linearity, polymer conductivity, and polymer dielectric constant. The lock-and-key devices were used to determine the response of the polymers to a spectrum of gases that included ammonia, carbon nonoxide, carbon dioxide, sulfur dioxide, ethylene, acrolein, water vapor, and normal laboratory air. Strongest responses were to water vapor, ammonia, and acrolein, and depending on the polymer, weaker responses to carbon dioxide, sulfur dioxide, and carbon monoxide were observed. A quantitative theory of device operation, capable of accounting for observed device leakage current and sensitivity, was developed. A prototype detection/alarm system was designed and built for use in demonstrating sensor performance.
Open-circuit voltages measured in silicon solar cells made from 0.01 ohm-cm material are 150 mV lower than voltages calculated from simple diffusion theory and cannot be explained by poor diffusion lengths or surface leakage currents. An analytical study was made to determine whether high doping effects, which increase the intrinsic carrier concentration, could account for the low observed voltages and to determine the limits on voltage and efficiency imposed by high doping effects. The results indicate that the observed variation of voltage with base resistivity is predicted by these effects. A maximum efficiency of 19% (AMO) and a voltage of 0.7 volts were calculated for 0.1 ohm-cm cells assuming an optimum diffused layer impurity profile.
Intensified CCDs (ICCDs) were built and operated. These ICCDs were electrostatically and magnetically-focussed image tubes which use CCDs as anodes. The ICCDs detected single photoelectrons, and have electron gain very near that which was predicted. The first single-pixel pulse-height distributions were presented, and the leakage current was shown to increase as a function of photoelectron irradiation. The advantages and disadvantages of front- and rear-illuminated designs were discussed in light of differing applications requirements.
Experimental measurements of the threshold current of oxide-isolated stripe laser as a function of stripe width and p-layer resistivity are presented. A calculation of the influence of carrier outdiffusion has been made, including the effect of current leakage beyond the stripe edges. The calculated threshold increase is in substantial agreement with experiment for stripe widths down to about 10 microns. The data also yield an effective diffusion length of about 7 microns for the lasers studied. Deviations between experimental and calculated thresholds occurring at stripe widths of 4-6 microns are represented by an empirical curve which is compared with previously published calculations of threshold gain.
Energetic particles can produce interstitial-vacancy pairs in a crystal by knocking the atoms from their normal positions. Detectors are unique among semiconductor devices in depending on very low concentrations of electrically active impurities, and also on efficient transport of holes and electrons over relatively large distances. Because the dense regions of damage produced by energetic particles may result in donors and/or acceptors, and also provide trapping sites for holes and electrons, detectors are very sensitive to radiation damage. In addition to these effects occurring within the detector, radiation may also change the characteristics of the exposed surfaces causing unpredictable effects on the detector leakage current. Radiation-induced surface degradation has rarely, if ever, been observed for germanium detectors. The possibility of minimizing hole trapping in charge collection by the use of a high-purity germanium coaxial detector configured with the p (+) contact on the coaxial periphery is discussed.
High performance 1.06 micron m avalanche photodetectors (APDs), fabricated in the GaAlSb system, have high quantum efficiency (90 percent), high speed (risetime less than 60 ps) and low leakage currents (less than 50 na). The dark current represents more than an order of magnitude reduction compared to previously reported results. The high speed avalanche gain of these devices is between 20 and 50. The area uniformity is better than + or - 10 percent. GaAlAs APDs at 0.53 micron m have even faster speed, lower dark currents, and high speed gains of 100 to 200. Optical rangefinders based on measured APD performance parameters have far superior performance when compared to even ideal photomultiplier tubes in either a one color or two color rangefinder system. For a one color system, f factor of two lower time jitter can be achieved with identical transmitted power. The superiority of the APD based two color receiver is significant and exists in the entire range of desired time jitters (less than 100 ps) and received power levels.
Topics related to processing and hardness assurance are considered, taking into account the radiation hardening of CMOS technologies, technological advances in the manufacture of radiation-hardened CMOS integrated circuits, CMOS hardness assurance through process controls and optimized design procedures, the application of operational amplifiers to hardened systems, a hard off-the-shelf SG1524 pulse width modulator, and the gamma-induced voltage breakdown anomaly in a Schottky diode. Basic mechanisms are examined, giving attention to chemical and structural aspects of the irradiation behavior of SiO2 films on silicon, experimental observations of the chemistry of the SiO2/Si interface, leakage current phenomena in irradiated SOS devices, the avalanche injection of holes into SiO2, the low-temperature radiation response of Al2O3 gate insulators, and neutron damage mechanisms in silicon at 10 K. Other subjects discussed are related to radiation effects in devices and circuits, space radiation effects, and aspects of simulation, energy deposition, and dosimetry.
Samples manufactured by Semtech were tested. Devices showed excessine reverse leakage currents during each of three test phases. Results of testing suggest that failures occurred because of static charge on surface of encapsulant, caused by thermal decomposition of paint.
Samples manufactured by Siemens and Motorola were tested. Both lots did well in groups 1 and 3 testing. Failure analysis was done for group 2 tests because of excessive reverse-leakage-current failure mode.
The elemental composition with depth into the oxide films was examined using secondary ion mass spectrometry. Results indicate that the layers are arsenic-deficient through the bulk of the oxide and arsenic-rich near both the oxide surface and the oxide-semiconductor interface region. Phosphorus is incorporated into the oxide in an approximately uniform manner. The MIS capacitor structures exhibited deep-depletion characteristics and hysteresis indicative of electron trapping at the oxide-semiconductor interface. Post-oxidation annealing of the films in argon or nitrogen generally results in slightly increased dielectric leakage currents and decreased C-V hysteresis effects, and is associated with arsenic loss at the oxide surface. The results of bias-temperature stress experiments indicate that the major instability effects are due to changes in the electron trapping behavior. No changes were observed in the elemental profiles following electrical stressing, indicating that the grown films are chemically stable under device operating conditions.
Samples of aluminized Kapton used for passive thermal control on the VHF shield and the antenna dish of ESA's OTS satellite and its derivatives were subjected to an incident electron beam of 25 keV and irradiated for 8 hours at room temperature and at -173 C under a vacuum of the 10 to the minus 6 th power torr. Visual observations during electron irradiation, measurements of leakage current and discharge characteristics, and material degradation following completion of irradiation are discussed.
Equilibrium surface potentials for slab configurations (representative e.g. of a large solar power satellite) are determined under extensive parametric variations of materials, solar exposure and substorm characteristics. The dependence of the charging process for dielectric surfaces on the various material response characteristics is described. The results are used as a guide to the material selection and design of large space systems to minimize dielectric breakdowns and reduce parasitic leakage currents on SPS.
Several features of the interactions of the solar power satellite (SPS) with its space environment were examined theoretically. The voltages produced at various surfaces due to space plasmas and the plasma leakage currents through the kapton and sapphire solar cell blankets were calculated. At geosynchronous orbit, this parasitic power loss is only 0.7%, and is easily compensated by oversizing. At low-Earth orbit, the power loss is potentially much larger (3%), and anomalous arcing is expected for the EOTV high voltage negative surfaces. Preliminary results of a three dimensional self-consistent plasma and electric field computer program are presented, confirming the validity of the predictions made from the one dimensional models. Magnetic shielding of the satellite, to reduce the power drain and to protect the solar cells from energetic electron and plasma ion bombardment is considered. It is concluded that minor modifications can allow the SPS to operate safely and efficiently in its space environment. The SPS design employed in this study is the 1978 MSFC baseline design utilizing GaAs solar cells at CR-2 and an aluminum structure.
This paper examines theoretically several features of the interactions of the Solar Power Satellite (SPS) with its space environment. The leakage currents through the kapton and sapphire solar cell blankets are calculated. At geosynchronous orbit, this parasitic power loss is only 0.7%, and is easily compensated by oversizing. At low-earth orbit, the power loss is potentially much larger (3%), and anomalous arcing is expected for the high-voltage negative surfaces. Preliminary results of a three-dimensional self-consistent plasma and electric field computer program are presented, confirming the validity of the predictions made from the one-dimensional models. Lastly, the paper proposes magnetic shielding of the satellite, to reduce the power drain and to protect the solar cells from energetic electron and plasma ion bombardment. It is concluded that minor modifications from the baseline SPS design can allow the SPS to operate safely and efficiently in its space environment.
Several features of the interactions of the Solar Power Satellite (SPS) with its space environment are examined theoretically. The voltages produced at various surfaces due to space plasmas and the plasma leakage currents through the kapton and sapphire solar cell blankets are calculated. At geosynchronous orbit, this parasitic power loss is only 0.7%, and is easily compensated by oversizing. At low Earth orbit, the power loss is potentially much larger (3%), and anomalous arcing is expected for the EOTV high voltage negative surfaces. Preliminary results of a three dimensional self consistent plasma and electric field computer program are presented, confirming the validity of the predictions made from the one dimensional models. Lastly, magnetic shielding of the satellite is considered to reduce the power drain and to protect the solar cells from energetic electron and plasma ion bombardment. It is concluded that minor modifications can allow the SPS to operate safely and efficiently in its space environment. Subsequent design changes will substantially alter the basic conclusions.
The phenomenon of unexpectedly large leakage currents collected by small exposed areas of high voltage solar arrays operating in a plasma environment was investigated. Polyimide (Kapton) was the insulating material used in all tests. Both positive bias (electron collection) and negative bias (ion collection) tests were performed. A mode change in the electron collection mechanism was associated with a glow discharge process and was found to be related to the neutral background density. Results indicate that the glow discharge collection mode does not occur in a space environment where the background density is considerably lower than that of the vacuum facility used.
The success of a multilayer thermal blanket in eliminating arcing is discussed. Arcing is eliminated by limiting the surface potential to well below the threshold level for discharge. This is achieved by enhancing the leakage current which results in conduction of the excess charge to the spacecraft structure. The thermal blanket consists of several layers of thermal control (space approved) materials, bonded together, with Kapton on the outside, arranged in such a way that when the outer surface is charged by electron irradiation, a strong electric field is set up on the Kapton layer resulting in a greatly improved conductivity. The basic properties of matter utilized in designing this blanket method of charge removal, and optimum thermo-optical properties are summarized.