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Reduction of the contact resistance stabilizes the values, over a broad temperature range, of resistors used in linear integrated circuits. This reduction is accomplished by p-plus diffusion under the alloyed aluminum contacts.
An image dissector star tracker has been developed which operates in the photon counting mode making it possible to utilize all digital electronics. A unique pulse processing circuit allows bright stars to be tracked as well as dim stars. Thermal mechanical stability has been greatly enhanced by fabricating a housing with graphite/epoxy composite material with a linear coefficient of thermal expansion near zero. Test results indicate the +10 Mv stars can be acquired and tracked, while position variation with star intensity is less than 2 arc seconds from 2.5 Mv to +10 Mv. The noise equivalent angle for a +8 Mv star is 3 arc seconds. Polynominal correction for remaining cross-coupling and nonlinearity reduced error over total 1 x 1 deg field to 1.5 arc seconds.
Precise temperature stabilized phase detector for clock signal distribution maintains 100-MHz signal with stability of 5 parts in 10 to the 16th power even for step changes of 20 degrees C in ambient temperature. Stabilization achieved by heating unit to 45 degrees C and maintaining temperature through bridge circuit.
The design of electrometer circuitry using an integrated circuit operational amplifier with a MOSFET input is described. Input protection against static voltages is provided by a dual ultra low leakage diode or a neon lamp. Factors affecting frequency response leakage resistance, and current stability are discussed, and methods are suggested for increasing response speed and for eliminating leakage resistance and current instabilities. Based on the above, two practical circuits, one having a linear response and the other a logarithmic response, were designed and evaluated experimentally. The design of a sweep circuit to implement mobility measurements using atmospheric probes is presented. A triangular voltage waveform is generated and shaped to contain a step in voltage from zero volts in both positive and negative directions.
Stable integrable IF voltage amplifier with increased HF capability by gain reduction, showing network realizations for lumped and distributed RC circuits
A 30 kW class arcjet Power Conditioning Unit, PCU, was built and tested during this Phase 2 SBIR contract. The PCU is an improved version of two previously developed PCU's. All of these units are 3-phase, 20 kHz buck regulators with current mode feed back to modulate the duty cycle to control the arcjet current at any selected operating point. The steady state control can assure arcjet stability despite the negative dynamic resistance of the arc discharge. The system also has a circuit to produce a high voltage start pulse to breakdown the gas and initiate the arc. The start pulse is formed by temporarily switching a short current path across the output terminals with a special solid state switching array. The switches then open rapidly, and the energy stored in the output inductors of the buck regulator produces a pulse of approximately 2500 V for approximately 500 nsec. The system was tested and modified until the transition to steady operation occurred after start up with a very small surge current overshoot. The system also can withstand a direct short circuit across the output without damage. The automatic feed back control simply reduces the duty cycle to hold the current at the set point. When the short is removed the full power output is immediately restored. This latest version arcjet PCU is conduction cooled to remove waste heat by conduction to the base plate. This unit is closer to flight a type of design than the previous functional bread boards. Waste heat is small because the PCU has a very high efficiency, 296 percent. The PCU was extensively tested with resistor loads to simulate operation with an arcjet. The unit was tested with ammonia arcjets at the Jet Propulsion Laboratory. Approximately 400 hours of testing were completed, with several starts. Many hours were also demonstrated with resistive loads. Some testing with hydrogen arcjets was also carried out at NASA LeRC. This system concept is now the design base for the ATTD program.
NASA's tether experiment ProSEDS will be placed in orbit on board a Delta-II rocket to test bare-tether electron collection, deorbiting of the rocket second stage, and the system dynamic stability. ProSEDS performance will vary because ambient conditions change along the orbit and tether-circuit bulk elements at the cathodic end follow the step-by-step sequence for the current cycles of operating modes (open-circuit, shunt and resistor modes for primary cycles; shunt and battery modes for secondary cycles). In this work we discuss expected ProSEDS values of the ratio L,/L*, which jointly with cathodic bulk elements determines bias and current tether profiles; L, is tether length, and L* (changing with tether temperature and ionospheric plasma density and magnetic field) is a characteristic length gauging ohmic versus baretether collection impedances. We discuss how to test bare-tether electron collection during primary cycles, using probe measurements of plasma density, measurements of cathodic current in resistor and shunt modes, and an estimate of tether temperature based on ProSEDS orbital position at the particular cycle concerned. We discuss how a temperature misestimate might occasionally affect the test of bare-tether collection, and how introducing the battery mode in some primary cycles, for an additional current measurement, could obviate the need of a temperature estimate. We also show how to test bare-tether collection by estimating orbit-decay rate from measurements of cathodic current for the shunt and battery modes of secondary cycles.
A discrete capacitance liquid level system developed is specifically for slush hydrogen, but applicable to LOX, LN2, LH2, and RP1 without modification is described. The signal processing portion of the system is compatible with conventional liquid level sensors. Compatibility with slush hydrogen was achieved by designing the sensor with adequate spacing, while retaining the electrical characteristics of conventional sensors. Tests indicate excellent stability of the system over a temperature range of -20 C to 70 C for the circuit and to cryogenic temperatures of the sensor. The sensor was tested up to 40 g's rms random vibration with no damage to the sensor. Operation with 305 m of cable between the sensor and signal processor was demonstrated. It is concluded that this design is more than adequate for most flight and ground applications.
Inversion layer solar cells were fabricated by etching through the diffused layer on p-type silicon wafers in a comb-like contact pattern. The charge separation comes from an induced p-n junction at the surface. The inverted surface is caused by a layer of transparent material applied to the surface that either contains free positive ions or that creates donor states at the interface. Cells are increased from 3 ma I sub sc to 100 ma by application of sodium silicate. The action is unstable, however, and decays. Non-mesa contaminated oxide cells were fabricated with short circuit currents of over 100 ma measured in the sun. Cells of this type have demonstrated stability.
Located in Bozeman, Montana, AdvR Inc. has been an active partner in NASA's Small Business Innovation Research (SBIR) and Small Business Technology Transfer (STTR) programs. Langley Research Center engineers partnered with AdvR through the SBIR program to develop new, compact, lightweight electro-optic components for remote sensing systems. While the primary customer for this technology will be NASA, AdvR foresees additional uses for its NASA-derived circuit chip in the fields of academic and industrial research anywhere that compact, low-cost, stabilized single-frequency lasers are needed.
The paper examines efficiency enhancement of coupled-cavity traveling-wave tube (TWT) through cavity resonance tapering. Beam-wave resynchronization through circuit velocity reduction is used for TWT efficiency enhancement, with circuit velocity reduction in coupled cavity TWT's accomplished through period tapering. However, the amount of the latter is limited by the stability considerations, so that beyond a critical value of velocity reduction, the tube may be subject to zero drive oscillations originating in the velocity taper region. The coupled-cavity resonance tapering allows the velocity reduction to continue beyond the limit of stable period tapering, and it is accomplished by a gradual reduction in the cavity resonance frequency, with the period and the circuit bandwidth unchanged. The advantages of cavity resonance tapering vs period tapering are discussed, and test data are presented with the results of large-signal computer calculations. It is shown that cavity resonance tapering can produce efficiencies as period tapering without incurring the same risk of lower band-edge oscillations.
Consideration of stability under structural perturbations of free dynamic systems described by the differential equation dx/dt = A(t,x)x, where the matrix A(t,x) has time-varying nonlinear elements. The concept of 'connective stability' is introduced to study the structural properties of competitive-cooperative nonlinear matrix systems. It is shown that stability reliability in such systems is high and that they remain stable despite time-varying (including 'on-off') interaction among individual agents present in the system. The results obtained can be used to study stability aspects of mathematical models arising in as diverse fields as economics, biology, arms races, and transistor circuits.
The development of technology for a 30 GHz low noise receiver utilizing GaAs FET devices exclusively is discussed. This program required single and dual-gate FET devices, low noise FET amplifiers, dual-gate FET mixers, and FET oscillators operating at Ka-band frequencies. A 0.25 micrometer gate FET device, developed with a minimum noise figure of 3.3 dB at 29 GHz and an associated gain of 7.4 dB, was used to fabricate a 3-stage amplifier with a minimum noise figure and associated gain of 4.4 dB and 17 dB, respectively. The 1-dB gain bandwidth of this amplifier extended from below 26.5 GHz to 30.5 GHz. A dual-gate mixer with a 2 dB conversion loss and a minimum noise figure of 10 dB at 29 GHz as well as a dielectric resonator stabilized FET oscillator at 25 GHz for the receiver L0. From these components, a hybrid microwave integrated circuit receiver was constructed which demonstrates a minimum single-side band noise figure of 4.6 dB at 29 GHz with a conversion gain of 17 dB. The output power at the 1-dB gain compression point was -5 dBm.
A focused approach to development and evaluation of organic polymer films for use in optoelectronics is presented. The issues and challenges that are addressed include: (1) material synthesis, purification, and the tailoring of the material properties; (2) deposition of uniform thin films by a variety of methods; (3) characterization of material physical properties (thermal, electrical, optical, and electro-optical); and (4) device fabrication and testing. Photonic materials, devices, and systems were identified as critical technology areas by the Department of Commerce and the Department of Defense. This approach offers strong integration of basic material issues through engineering applications by the development of materials that can be exploited as the active unit in a variety of polymeric thin film devices. Improved materials were developed with unprecedented purity and stability. The absorptive properties can be tailored and controlled to provide significant improvement in propagation losses and nonlinear performance. Furthermore, the materials were incorporated into polymers that are highly compatible with fabrication and patterning processes for integrated optical devices and circuits. By simultaneously addressing the issues of materials development and characterization, keeping device design and fabrication in mind, many obstacles were overcome for implementation of these polymeric materials and devices into systems. We intend to considerably improve the upper use temperature, poling stability, and compatibility with silicon based devices. The principal device application that was targeted is a linear electro-optic modulation etalon. Organic polymers need to be properly designed and coupled with existing integrated circuit technology to create new photonic devices for optical communication, image processing, other laser applications such as harmonic generation, and eventually optical computing. The progression from microscopic sample to a suitable film-forming material in a working device is a complex, multifaceted endeavor. It requires close attention to maintaining the optical properties of the electro-optic active portion of the polymer while manipulating the polymer structure to obtain the desired secondary polymer properties.
A new successive-approximation A/D converter is described. It combines a string of equal-valued polysilicon resistors and a set of ratioed capacitors in a unique circuit configuration so that a high sampling rate is achieved. The comparator is realized by a chopper-stabilized amplifier to reduce the effect of the offset voltages of MOS amplifiers. The converter performs an 8-b monotonic conversion with a differential nonlinearity less than 1 LSB in 770 nsec. The die area is 3750 sq mil. This new conversion technique can also be utilized in a pipelined A/D converter (Temes, 1985) and enables it to achieve high speed.
A new design of an active antenna with a dielectric resonator stabilized high electron mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported. The circuit is fabricated using coplanar waveguide (CPW) with the oscillator and the antenna on opposite sides of the substrate. The active antenna was demonstrated at 7.6 GHz; however, the design can be scaled to higher frequencies. Excellent oscillator characteristics and radiation patterns were obtained.
Future large-scale quantum processors (i.e. 100s of qubits), especially those based on superconducting circuits, will require large cooling powers (~10s of microW) at very low temperatures (<50 mK) with stringent temperature stabilities to avoid quantum decoherence and thus guarantee successful operation of such systems. One attractive option for providing this cooling is through Continuous Adiabatic Demagnetization Refrigerators (CADR). Scalable state-of-the-art CADRs at NASA's Goddard Space Flight Center have successfully shown to lift 6 W of heat at 50 mK with a 1 K temperature stability while rejecting its heat to a cryocooler at 4K. Carefully planned and proper heat sinking of cables, attenuators, and microwave components at various temperature stages (between 4K and base temperature) is critical in the cooling architecture of quantum computers and can be provided through proper staging of each unit within the CADR system. As an alternative method of cooling, dilution refrigerators with the potential to meet cooling requirements of emerging large-scale quantum processors are also discussed.
It was demonstrated that Indium Tin Oxide (ITO)/InP solar cells can now be made on as-received p(-) bulk substrates which are of nearly equal quality to those which could previously only be made on epitaxially grown p(-) InP base layers. Although this advancement is due in part to both increases in substrate quality and a better understanding of back contact formation, it appears that the passivation/compensation effects resulting from having H2 in the sputtering gas tends to reduce significantly the performance differences previously observed between these two substrates. It is shown that since high efficiency ITO/InP cells can be made from as-received substrates, and since the type conversion process is not highly spatially dependent, large area ITO/InP cells (4 sq cm) with efficiencies approaching 17 percent (Global) can be made. Furthermore, the measured open circuit voltages (V sub OC) and quantum efficiencies (QEs) from these large cells suggest that, when they are processed using optimum grid designs, the efficiencies will be nearly equal to that of the smaller cells thus far produced. It has been shown, through comparative experiments involving ITO/InP and IO/InP cells, that Sn may not be the major cause of type conversion of the InP surface and thus further implies that the ITO may not be an essential element in this type of device. Specifically, very efficient photovoltaic solar cells were made by sputtering (Sn free) In2O3 showing that type conversion and subsequent junction formation will occur even in the absence of the sputtered SN species. The result suggests that sputter damage may indeed be the important mechanism(s) of type conversion. Finally, an initial study of the stability of the ITO/InP cell done over the course of about one year has indicated that the J(sub SC) (short circuit current) and the fill factor (FF) are measurably stable within experimental certainty.