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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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The development of SiC as a high temperature semiconductor material is discussed, focusing on the epitaxial growth of single crystal SiC films on inexpensive single crystal silicon wafers. Progress in the improvement of film morphology and the elimination of antiphase disorder is examined. Potential candidate materials for high temperature semiconductor devices are compared and SiC films are evaluated.
Abstract Lately, heterogeneous semiconductor materials have been explored as an emerging type of efficient photocatalyst for photoredox organic synthesis. Among these semiconductors, lead halide perovskite materials demonstrate unique properties towards excellent charge separation and charge transfer, extremely long charge carrier migration, high efficiency in visible light absorption, and long excited states lifetimes, etc., as proved in ground‐breaking solar cell applications, garnering necessary merits for an efficient catalytic system for photoredox organic reactions. Here, the latest progress in heterogeneous semiconductor materials towards this endeavor is examined, with particular emphasis on lead halide perovskite nanocrystals (NCs) in photocatalytic organic synthesis.
Semiconductor/electrolyte interfaces are of great interest to numerous scientific fields including renewable energy, (photo)electrochemistry, and energy storage. The semiconductor flatband potential is a key parameter in locating the conduction band minimum or valence band maximum of the semiconductor material in electrolyte. Despite its importance for quantifying the energetic location of the semiconductor bands, literature reports for the same material demonstrate significant variability in the flatband potential. In this compendium and meta-analysis, reported flatband potentials of the common semiconductor materials TiO2, SnO2, and ZnO in aqueous electrolyte were compiled and assessed to quantify the spread in literature flatband potentials as well as determine the factors that lead to the significant spread. For TiO2, SnO2, and ZnO, literature flatband potentials referenced to the reversible hydrogen electrode span a range of nearly 2 V each. Flatband potential tabulations were separated by variables such as the solution pH, the crystalline polymorph, the crystal facet, the morphology, and the dimensions or combinations of these variables to assess the factors that contribute to the observed spread. Important and surprising findings from these categorizations are summarized: (1) Even for the narrowest categorizations, the spread in flatband potential is still large. (2) Flatband potentials of TiO2 and SnO2 follow the expected Nernstian dependence with solution pH. ZnO materials deviate from this Nernstian dependence. (3) In the aggregate, there is no statistically significant difference in the reported flatband potentials of anatase and rutile TiO2. Single crystal tabulations were the only distributions to have statistically significant differences in the flatband potential between anatase and rutile TiO2. (4) Anatase TiO2 materials with a nanotube morphology appear to have a +400 mV difference in mean flatband potential compared to all other morphologies, but we argue that this is likely due to widespread misuse of the Mott–Schottky analysis. Other interesting findings are revealed within the spread of literature flatband potentials, and possible explanations are provided to generate discussion. We also briefly review and discuss common techniques that were used to determine the flatband potential and the pitfalls/criticisms of these techniques. Last, we discuss some ways in which future research on the determination of the flatband potential can be performed to improve the reliability of reported values and the quality of the work. In total, the results from this meta-analysis suggest multiple factors can affect the measured flatband potential and that an abundance of caution should be applied when attempting to quantify the flatband potential of complex or nanostructured systems.
Amorphous oxide semiconductor materials have demonstrated numerous advantages without compromise of electrical properties as compared to their crystalline counterparts, yet understanding of the fundamental principles allowing this has remained elusive. To study the origins of enhanced optoelectronic properties, we apply high-throughput, combinatorial sputtering, structural and spectral mapping, and computationally intensive ab initio molecular dynamics simulations with density functional theory to a ternary, post-transition metal oxide system, namely, zinc tin oxide. The deposited thin films exhibit a high figure of merit, achieving carrier densities in the range of 1019 to 1020 cm–3 and carrier mobilities up to 35 cm2/Vs. These results highlight the role of local distortions and cation coordination in determining the microscopic origins of carrier generation and transport. In particular, we identify the strong likelihood of Sn undercoordination in both Zn-poor and Zn-rich phases leading to the high carrier concentrations observed. This not only diverges from the still widespread historical indictment of oxygen vacancies controlling carrier population in crystalline oxides but also provides a comprehensive framework to describe the unique structure–property relationships using specific structural and electronic descriptors in disordered phase materials.
A non-crystallized silicon known as amorphous silicon is the semiconductor material most frequently chosen for deposition, because it is a strong absorber of light. According to the U.S. Department of Energy, amorphous silicon absorbs solar radiation 40 times more efficiently than single-crystal silicon, and a thin film only about 1-micrometer (one one-millionth of a meter) thick containing amorphous silicon can absorb 90 percent of the usable light energy shining on it. Peak efficiency and significant reduction in the use of semiconductor and thin film materials translate directly into time and money savings for manufacturers. Thanks in part to NASA, thin film solar cells derived from amorphous silicon are gaining more and more attention in a market that has otherwise been dominated by mono- and poly-crystalline silicon cells for years. At Glenn Research Center, the Photovoltaic & Space Environments Branch conducts research focused on developing this type of thin film solar cell for space applications. Placing solar cells on thin film materials provides NASA with an attractively priced solution to fabricating other types of solar cells, given that thin film solar cells require significantly less semiconductor material to generate power. Using the super-lightweight solar materials also affords NASA the opportunity to cut down on payload weight during vehicle launches, as well as the weight of spacecraft being sent into orbit.
Monolithic integration of lattice-mismatched semiconductor materials opens up access to a wide range of bandgaps and new device functionalities. However, it is inevitably accompanied by defect formation. A thorough analysis of how these defects propagate and interact with interfaces is critical to understanding their effects on device parameters. In this study, we present a comprehensive study of dislocation networks in the GaSb/GaAs heteroepitaxial system using transmission electron microscopy (TEM). Specifically, the sample analyzed is a GaSb film grown on GaAs using dislocation–reduction strategies such as interfacial misfit array formation and introduction of a dislocation filtering layer. Using various TEM techniques, it is shown that such an analysis can reveal important information on the dislocation behavior including filtering mechanism, types of dislocation reactions, and other interactions with interfaces. A novel method that enables plan-view imaging of deeply embedded interfaces using TEM and a demonstration of independent imaging of different dislocation types are also presented. While clearly effective in characterizing dislocation behavior in GaSb/GaAs, we believe that the methods outlined in this article can be extended to study other heteroepitaxial material systems.
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Â. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
III-V semiconductor materials such as indium phosphide (InP) offer outstanding photonic properties that outperforms silicon, but the cost of these wafers is extremely expensive. Although reusing original wafers can effectively minimize the cost, current techniques for wafer recycling of these substrates add significant costs in fabrication, nullifying the cost savings by reusing the wafers. Besides, unlike other III-V materials such as gallium arsenide (GaAs), commonly used epitaxial lift-off method for wafer recycling is not well studied for materials like InP due to lack of lattice-matched sacrificial layers, which makes reusing these wafers more difficult. Remote epitaxy and nanopatterned epitaxy are newly discovered methods that enable single-crystal growth of III-V semiconductor thin films and easy exfoliation of these grown films, thus promising for a new cost-effective pathway of reusing wafers. However, previous methods of transferring two-dimensional (2D) materials, which use polymethyl methacrylate (PMMA) or metal stressor layers to transfer 2D materials grown on foreign substrates like copper (Cu) or silicon carbide (SiC), introduce defects and damages on the 2D layer and/or substrates during the transfer process. Remote epitaxial and nanopatterned epitaxial films grown on the damaged 2D layer/substrate suffer from lower crystal quality and imperfect exfoliation, which undermines wafer reusability and device performance. Here we report the MBE growth of amorphous boron nitride (a-BN) on InP wafers at low temperature that enabled improved quality of remote epitaxial and nanopatterned epitaxial films and their perfect exfoliation. We show fully covered a-BN on InP substrates despite their low decomposition temperatures. The surface of a-BN coated InP substrate remains smooth with a RMS roughness of around 3Å. We also demonstrate 100% coverage of single-crystal InP thin films grown on a-BN, with the film's quality significantly improved compared to the case of transferred 2D materials. In addition, the growth and exfoliation were successfully repeated multiple times, proving the feasibility for InP wafer recycling. Through this low temperature MBE growth approach with remote epitaxy and nanopatterned epitaxy, we successfully demonstrate large-scale flexible thin film exfoliation and recycling of InP substrates, which will lead to new opportunities in InP thin film-based photonics and novel heterostructures with significantly reduced cost.
Research projects involving materials research conducted by various international test facilities are reported. Much of the materials research is classified in the following areas: (1) acousto-optic, acousto-electric, and ultrasonic research, (2) research for elucidating transport phenomena in well characterized oxides, (3) research in semiconductor materials and semiconductor devices, (4) the study of interfaces and interfacial phenomena, and (5) materials research relevant to natural resources. Descriptions of the individual research programs are listed alphabetically by the name of the author and show all personnel involved, resulting publications, and associated meeting speeches.
Abstract High-purity crystalline solid-state materials play an essential role in various technologies for quantum information processing, from qubits based on spins to topological states. New and improved crystalline materials emerge each year and continue to drive new results in experimental quantum science. This article summarizes the opportunities for a selected class of crystalline materials for qubit technologies based on spins and topological states and the challenges associated with their fabrication. We start by describing semiconductor heterostructures for spin qubits in gate-defined quantum dots and benchmark GaAs, Si, and Ge, the three platforms that demonstrated two-qubit logic. We then examine novel topologically nontrivial materials and structures that might be incorporated into superconducting devices to create topological qubits. We review topological insulator thin films and move onto topological crystalline materials, such as PbSnTe, and its integration with Josephson junctions. We discuss advances in novel and specialized fabrication and characterization techniques to enable these. We conclude by identifying the most promising directions where advances in these material systems will enable progress in qubit technology.
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region. Separation of layers is necessary to prevent shorting out junctions between alternating regions.
Etching rates of alloys and heavily-doped semiconductor materials significantly higher than lightly doped semiconductor if proper etching system used. Selectivity used to etch regions of semiconductor preferentially while not etching other unmasked regions. When selective etching used with laser-induced-diffusion techniques, possible to make structures that cannot be made at present. Possible to produce well-defined structures in and through wafer while not damaging existing structures on wafer.
A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
A field effect transistor having at least a gate, source, and drain electrodes and a semiconductor channel for controlling transport of charge carriers between the source and drain electrodes, the gate being insulated from the channel by an dielectric, at least a portion of the dielectric disposed between the gate electrode and the semiconductor channel being doped or imbued with the an element which if doped or imbued into a semiconductor material would cause the semiconductor to be p-type. The p-type element used to dope or imbue the gate dielectric is preferably Mg.
Solid-state, high-temperature sensing devices are required for accurate temperature, strain/stress, and failure monitoring for a range of advanced manufacturing, transportation, and military applications. High temperature conditions limit sensing strategies, where typically traditional metal and semiconductor materials are unstable, and the sensing options are limited to optical spectroscopy methods. In addition, strategies to embed the sensors directly within active components and protective thermal refractory are of interest that permit near-environment sensing which is not possible with the traditional electronic materials and components. Rare-earth chromite semiconductors exhibit some properties of interest for high temperature sensing technologies, such as: high microstructure and chemical stability, relatively high electronic conductivity at high temperatures, and relative thermal expansion coefficient matching to refractory thermal protective insulation (such as high-zirconia and -alumina ceramics). In this work, n-type and p-type doped lanthanum chromites compositions were computationally modelled and prepared, and the electrical, thermoelectric, and thermomechanical properties were measured for the obtained material systems. A few compositions were then processed into thick film health and temperature sensors and tested at high temperatures. To establish relative stability under harsh environment conditions, post- mortem microstructure and chemical composition was characterized after extended and cycle testing at high temperatures.
Intermediate alloy formed between foreign substrates and semiconductor material enable the growth of single crystal semiconductor films on the alloy layer. The melted film must not ball up on the surface of the substrate and neither chemically react nor alloy with the intermediate alloy formed on the substrate.
Reflector directs intense, sharply focused heat precisely where it is needed for zone-refining semiconductor materials. Reflector is especially suited for compound semiconductors which must be sealed inside capsule to prevent vaporizing during zone refining. Device is flattened toroid with elliptical-cross-section, much like horizontal partly-inflated inner tube.
Proposed class of thermovoltaic devices made of semiconductor materials having relatively low energy gaps between valence and conduction electron-energy bands ("low bandgaps" for short). Devices exhibit relatively high energy-conversion efficiencies while receiving energy from sources at temperatures lower than those used with older thermovoltaic devices.