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At least 145 records · Page 8

Memory and rejuvenation in glassy systems

Here, the memory effect in a single crystal spin glass (Cu 0.92 Mn 0.08 ) has been measured using 1 Hz ac susceptibility measurements over a reduced temperature range of 0.4 - 0.7 T g and a model of the memory effect has been developed. A double-waiting-time protocol is carried out where the spin glass is first allowed to age at a temperature below T g , T w$_{1}$ , followed by a second aging 4 K lower, T w$_{2}$ . The 4 K separation is sufficient to ensure rejuvenation has occurred. The model is based on calculating overlaps between the growth of the correlation lengths at the two temperatures. It accounts for the absolute magnitude of the memory effect as a function of both waiting times and temperatures. The data can be explained by the memory loss being a function of the relative change in the correlated volume at the first waiting temperature due to growth in the correlations at the second waiting temperature.

36 MATERIALS SCIENCE↗

Half-State Readout In Vertical-Bloch-Line Memory

Potentially narrow margins of chirality-based chopping of magnetic stripes avoided. Half-state readout is experimental method of readout in Vertical-Bloch-Line (VBL) memory. Based on differential deflections of magnetic stripe domains in which data bits stored. To give meaning to explanation of half-state readout, see "Vertical-Bloch-Line Memory" (NPO-18467).

Katti, Romney R.↗

Effect of Shock on the Magnetic Properties of Pyrrhotite, the Martian Crust, and Meteorites

We performed planar shock recovery experiments on natural pyrrhotite at pressures up to 6.9 GPa. We find that high-field isothermal remanent magnetization in pyrrhotite is demagnetized up to 90% by shock due to preferential removal of low coercivity components of magnetization. Contrary to static experiments, we do not observe complete demagnetization. Post shock permanent changes in magnetic properties include increasing saturation isothermal remanent magnetization, bulk coercivity and lowtemperature memory, and changes in squareness of hysteresis. These changes are consistent with an increase in the volume fraction of single domain grains. The lack of magnetic anomalies over large Martian impact basins is not expected to be solely due to shock demagnetization of the crust. We find that pyrrhotite-bearing rocks and meteorites can retain records of Martian magnetic fields even if shocked to pressures approaching 7 GPa. However, some paleointensity techniques may underestimate this field.

Louzad, Karin L.↗

Direct measurement of reduced exchange stiffness and its impact on magnetic vortex behavior in PyGd alloys

Thin films composed of sputtered transition metal/rare earth (TM/RE) ferrimagnets have emerged as promising building blocks for future spintronic devices, offering tunable magnetic properties critical for data storage, memory, and logic applications. However, understanding how the combination of TM and RE elements influences effective magnetic properties, such as exchange stiffness (Aex), remains challenging. Magnetic vortices provide a versatile tool for probing these properties in thin film systems. By combining magnetic imaging via soft x-ray microscopy and micromagnetic modeling, we quantify the effective exchange stiffness in PyGd ferrimagnetic disks with varying Gd concentrations. Our results indicate a reduction in Aex to below 3 pJ/m for a 20% Gd concentration when compared to reference Py, and values below 2 pJ/m for 30% Gd, reflecting weak Ni–Gd exchange coupling. These findings highlight the critical role of rare earth content in tuning the exchange stiffness. The reduced exchange stiffness facilitates a linear field response of the magnetization up to the edge of the disk, as well as significant deformations in the vortex core itself when compared to films with larger Aex. Our results are in line with, albeit lower than, recent measurements of the exchange stiffness in intermixed PyGd. This reduced exchange stiffness has implications for the development of spintronic devices based on ferrimagnetic skyrmions.

Jacob, Liyan↗

Advanced detectors and signal processing for bubble memories

The feasibility of combining silicon and magnetic bubble technologies is demonstrated. Results of bubble film annealing indicate that a low temperature silicon on garnet technology is the most likely one to succeed commercially. Annealing ambients are also shown to have a major effect on the magnetic properties of bubble films. Functional MOSFETs were fabricated on bubble films coated with thick (approximately 1 micron) SiO2 layers. The two main problems with these silicon on garnet MOSFETs are low electron mobilities and large gate leakage currents. Results indicate that the laser recrystallized silicon and gate oxide (SiO2) layers are contaminated. The data suggest that part of the contaminating ions originate in the sputtered oxide spacer layer and part originates in the bubble film itself. A diffusion barrier, such as silicon nitride, placed between the bubble film and the silicon layer should eliminate the contamination induced problem.

Kryder, M. H.↗

Slow Quasiparticle Dynamics and Anyonic Statistics in a Fractional Quantum Hall Fabry-Pérot Interferometer

Anyons are two-dimensional particles with fractional exchange statistics that emerge as elementary excitations of fractional quantum Hall phases. Experimentally, their exchange statistics can be measured in the edge-state Fabry-Pérot interferometer, wherein the presence of 𝑁 𝑞⁢𝑝 localized anyons contributes a phase 𝑁 𝑞⁢𝑝⁢ 𝜃 𝑎 to the interference pattern where 𝜃 𝑎 is twice the exchange phase. Here we report the observation of large, hysteretic phase jumps in a monolayer graphene Fabry-Pérot interferometer at 𝜈 = 1/3. When the filling factor is increased from 𝜈 < 1/3 toward the center of the plateau, we observe phase slips with magnitude Δ⁢𝜃 ≈ 2⁢𝜋/3, consistent with the addition of individual quasiparticles to the interferometer bulk. These phase slips occur as instantaneous jumps in the interference signal, with intervals between the jumps indicating quasiparticle equilibration times exceeding 20 min. We use this long timescale to investigate the effect of changes in interferometer area 𝐴 𝐼 and 𝑁 𝑞⁢𝑝 independently at fixed magnetic field, revealing a striking memory effect in the phase slip magnitude. In particular, as the 𝜈 =1/3 plateau is approached from higher filling, we observed phase slips with Δ⁢𝜃 significantly larger than 2⁢𝜋/3 over the same range of gate voltage where quantized jumps are seen for increasing 𝜈. We discuss this asymmetry in terms of bulk-edge coupling of quasiparticles localized near the edge or in the bulk, and argue that this effect can be qualitatively reconciled with theoretical expectations for strongly interacting quasiparticles in the presence of weak disorder and strongly nonequilibrium charge dynamics. Besides providing a replication of interferometric measurements sensitive to 𝜃 𝑎 , our results highlight the key role played by charge dynamics on signatures of the anyon phase, and demonstrate that fractional quasiparticles can be indefinitely localized in nonequilibrium configurations.

anyons↗

Tetrad bubble domain chip arrangement for multiplexing

Rotating magnetic field of bubble domain memory is used to obtain time-division multiplexing of bubble domain circuits into quadrants. Memory bits are assigned on bit-per-chip rather than bit-per-module basis; power is reduced by circulating only portion of bubbles at a time.

Almasi, G. S.↗

On a photon-counting array using the Fairchild CCD-201

The evaluation of certain performance parameters of the Fairchild CCD 201 and the proposed method of operation of an electron bombarded charge coupled device are described. Work in progress on the evaluation of the parameters relevant to remote, low noise operation is reported. These tests have been conducted using light input. The video data from the CCD are amplified, digitized, stored in a minicomputer memory, and then recorded on magnetic tape for analyzing. The device will be used in an array of sensors in the aperture plane of a telescope to discriminate between photoelectron events, and in the focal plane operating at single photoelectron sensitivity at a minimum of blooming and lag.

Currie, D. G.↗

Development and Testing of an Axial Halbach Magnetic Bearing

The NASA Glenn Research Center has developed and tested a revolutionary Axial Halbach Magnetic Bearing. The objective of this work is to develop a viable non-contact magnetic thrust bearing utilizing Halbach arrays for all-electric flight, and many other applications. This concept will help to reduce harmful emissions, reduce the Nation s dependence on fossil fuels and mitigate many of the concerns and limitations encountered in conventional axial bearings such as bearing wear, leaks, seals and friction loss. The Axial Halbach Magnetic Bearing is inherently stable and requires no active feedback control system or superconductivity as required in many magnetic bearing designs. The Axial Halbach Magnetic Bearing is useful for very high speed applications including turbines, instrumentation, medical systems, computer memory systems, and space power systems such as flywheels. Magnetic fields suspend and support a rotor assembly within a stator. Advanced technologies developed for particle accelerators, and currently under development for maglev trains and rocket launchers, served as the basis for this application. Experimental hardware was successfully designed and developed to validate the basic principles and analyses. The report concludes that the implementation of Axial Halbach Magnetic Bearings can provide significant improvements in rotational system performance and reliability.

Eichenberg, Dennis J.↗

Integrating TV/digital data spectrograph system

A 25-mm vidicon camera was previously modified to allow operation in an integration mode for low-light-level astronomical work. The camera was then mated to a low-dispersion spectrograph for obtaining spectral information in the 400 to 750 nm range. A high speed digital video image system was utilized to digitize the analog video signal, place the information directly into computer-type memory, and record data on digital magnetic tape for permanent storage and subsequent analysis.

Duncan, B. J.↗

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Abstract Antiferromagnetic spintronics 1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials 3,4 . Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Science & Technology - Other Topics↗

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗

Conceptual design of a 10 to the 8th power bit magnetic bubble domain mass storage unit and fabrication, test and delivery of a feasibility model

The conceptual design of a highly reliable 10 to the 8th power-bit bubble domain memory for the space program is described. The memory has random access to blocks of closed-loop shift registers, and utilizes self-contained bubble domain chips with on-chip decoding. Trade-off studies show that the highest reliability and lowest power dissipation is obtained when the memory is organized on a bit-per-chip basis. The final design has 800 bits/register, 128 registers/chip, 16 chips/plane, and 112 planes, of which only seven are activated at a time. A word has 64 data bits +32 checkbits, used in a 16-adjacent code to provide correction of any combination of errors in one plane. 100 KHz maximum rotational frequency keeps power low (equal to or less than, 25 watts) and also allows asynchronous operation. Data rate is 6.4 megabits/sec, access time is 200 msec to an 800-word block and an additional 4 msec (average) to a word. The fabrication and operation are also described for a 64-bit bubble domain memory chip designed to test the concept of on-chip magnetic decoding. Access to one of the chip's four shift registers for the read, write, and clear functions is by means of bubble domain decoders utilizing the interaction between a conductor line and a bubble.

Source record↗

Computer memory access technique

Computer memory access commutator and steering gate configuration produces bipolar current pulses while still employing only the diodes and magnetic cores of the classic commutator, thereby appreciably reducing the complexity of the memory assembly.

Zottarelli, L. J.↗

Partially Grooved Domain Stabilization Structures for Vertical Bloch Line Memory

Bias field stability ranges were measured and numerically simulated for magnetic domains ingarnets stabilized by partially grooved rectangular and ring grooves. Simulation results agreefavorably with experimental results when finite slope effects of the groove walls are included. Asbias fields increase, rectangular and ring domains both destabilize through stripe head recession. Asbias fields decrease, destabilization in rectangular domains occurs by runout, while destabilization inring domains occurs by midstripe domain buckling. While ring domains are stable at lower biasfields than rectangular domains, bias field stability ranges are approximately equal. Hence, for thesame partial grooving depth, rectangular domains are preferred because they offer higher storagedensity potential in Vertical Block Line (VBL) storage arrays as long as bit propagation margins atstripe ends are sufficient.

Katti, R. R.↗