NASA NTRS · 19940000049
Half-State Readout In Vertical-Bloch-Line Memory
Abstract
Potentially narrow margins of chirality-based chopping of magnetic stripes avoided. Half-state readout is experimental method of readout in Vertical-Bloch-Line (VBL) memory. Based on differential deflections of magnetic stripe domains in which data bits stored. To give meaning to explanation of half-state readout, see "Vertical-Bloch-Line Memory" (NPO-18467).
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Katti, Romney R., Wu, Jiin-Chuan, Stadler, Henry L.. 1994-02-01. Half-State Readout In Vertical-Bloch-Line Memory. https://ntrs.nasa.gov/citations/19940000049
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