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At least 1,423 records · Page 79

Investigating trends in actinide covalency and magnetism with 35/37 Cl SSNMR spectroscopy and first-principles calculations

Solid-state NMR (SSNMR) spectroscopy is a powerful technique for studying actinide chemistry but has been significantly limited due to the complex paramagnetism, and radiological hazards presented by these materials. Lanthanide and actinide salts often feature magnetic ordering and can be paramagnetic, ferromagnetic, or antiferromagnetic depending on temperature and electronic structure. Paramagnetic interactions can manifest in SSNMR both as secular spectral shifts and/or couplings as well as contributions from non-secular relaxation. Both effects can be directly measured with NMR and used to extrapolate rich chemical information such as coordination environments, bonding characteristics, local molecular dynamics, and correlation times. Typically, these studies are carried out on high-γ and highly abundant NMR-active isotopes (e.g., 1 H, 6/7 Li, 19 F, 23 Na, etc.) or on enriched rare isotopes (e.g., 2 H and 17 O), which can be expensive. Herein, we present a facile methodology to measure the 35/37 Cl electric-field gradient (EFG) and paramagnetic shift anisotropy (SA) tensor components using static wideline SSNMR measurements of LaCl 3 , NdCl 3 , UCl 3 , and UCl 4 . The static powder spectra were measured with both 35 Cl and 37 Cl SSNMR to increase the fidelity of the extracted tensor parameters. Variable temperature NMR of a select case confirms the Curie–Weiss paramagnetism. Relaxation measurements of both nuclei further corroborate observations owing to the paramagnetic relaxation enhancement and reveal simultaneous quadrupolar relaxation mechanisms. Density functional theory (DFT) calculations using Hubbard U corrections to the uranium valence orbitals show excellent agreement with experimental EFG tensor parameters and help describe the bonding characteristics in these lanthanide and actinide systems.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗

Pulsed laser deposition of high-quality thin films of the insulating ferromagnet EuS

High-quality thin films of the ferromagnetic insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al{sub 2}O{sub 3} (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of magnetic and electric properties opens the gate for future devices that require a true ferromagnetic insulator.

36 MATERIALS SCIENCE↗

Predictive design of intrinsic half-metallicity in zigzag tungsten dichalcogenide nanoribbons

Realization of half-metallicity with a sizable minority-spin gap and ferromagnetic ordering has been a central research emphasis in the development of next-generation spintronic devices. To date, only three-dimensional half-metals have been achieved experimentally, while their counterparts based on two-dimensional (2D) materials remain to be materialized despite extensive efforts based on various predictive designs. This standing challenge is largely due to stringent requirements to establish ferromagnetic order in low-dimensional systems. In this work, we use first-principles approaches to show that atomically thin zigzag tungsten dichalcogenide WX 2 (X = S, Se) nanoribbons preserving the stoichiometry of W : X = 1 : 2 stand as highly appealing intrinsic half-metallic systems, without invoking the prevailing approaches of applying an external electric field, chemical modification, or carrier doping. The readily accessible half-metallicity is attributed to distinctly different edge reconstructions, insulating along the X-terminated edges and metallic along the self-passivated W-terminated edges; the latter are further characterized by a robust spin-polarized electron transmission channel. These findings are expected to provide indispensable elemental building blocks for spintronic applications purely based on 2D materials.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Field-free topological behavior in the magnetic domain wall of ferrimagnetic GdFeCo

Exploring and controlling topological textures such as merons and skyrmions has attracted enormous interests from the perspective of fundamental research and spintronic applications. It has been predicted theoretically and proved experimentally that the lattice form of topological meron-skyrmion transformation can be realized with the requirement of external magnetic fields in chiral ferromagnets. However, such topological transition behavior has yet to be verified in other materials. Here, we report real-space observation of magnetic topology transformation between meron pairs and skyrmions in the localized domain wall of ferrimagnetic GdFeCo films without the need of magnetic fields. The topological transformation in the domain wall of ferrimagnet is introduced by temperature-induced spin reorientation transition (SRT) and the underlying mechanism is revealed by micromagnetic simulations. The convenient electric-controlling topology transformation and driving motion along the confined domain wall is further anticipated, which will enable advanced application in magnetic devices.

36 MATERIALS SCIENCE↗

All-electric spin modulator based on a two-dimensional topological insulator

We propose and investigate a spin modulator device consisting of two ferromagnetic leads connected by a two-dimensional topological insulator as the channel material. It exploits the unique features of the topological spin-helical edge states, such that the injected carriers with a non-collinear spin-polarization direction would travel through both edges and show interference effect. The conductance of the device can be controlled in a simple and all-electric manner by a side-gate voltage, which effectively rotates the spin-polarization of the carrier. At low voltages, the rotation angle is linear in the gate voltage, and the device can function as a good spin-polarization rotator by replacing the drain electrode with a non-magnetic material.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Towards diluted magnetism in TaAs

Magnetism in Weyl semimetals is desired to investigate the interaction between the magnetic moments and Weyl fermions, e.g., to explore anomalous quantum Hall phenomena. In this work, we demonstrate that proton irradiation is an effective tool to induce ferromagnetism in the Weyl semimetal TaAs. The intrinsic magnetism is observed with a transition temperature above room temperature. The magnetic moments from d states are found to be localized around Ta atoms. Further, the first-principles calculations indicate that the d states localized on the nearest-neighbor Ta atoms of As vacancy sites are responsible for the observed magnetic moments and the long-ranged magnetic order. The results show the feasibility of inducing ferromagnetism in Weyl semimetals so that they may facilitate the applications of this material in spintronics.

36 MATERIALS SCIENCE↗

Characterization of Mn 5 Ge 3 Contacts on a Shallow Ge/SiGe Heterostructure

Mn 5 Ge 3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn 5 Ge 3 -based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn 5 Ge 3 -based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn 5 Ge 3 -based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn 5 Ge 3 -based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn 5 Ge 3 /n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.

36 MATERIALS SCIENCE↗

Layer-dependent ferromagnetism in a van der Waals crystal down to the monolayer limit

Since the celebrated discovery of graphene, the family of two-dimensional (2D) materials has grown to encompass a broad range of electronic properties. Recent additions include spin-valley coupled semiconductors, Ising superconductors that can be tuned into a quantum metal, possible Mott insulators with tunable charge-density waves, and topological semi-metals with edge transport. Despite this progress, there is still no 2D crystal with intrinsic magnetism, which would be useful for many technologies such as sensing, information, and data storage. Theoretically, magnetic order is prohibited in the 2D isotropic Heisenberg model at finite temperatures by the Mermin-Wagner theorem. However, magnetic anisotropy removes this restriction and enables, for instance, the occurrence of 2D Ising ferromagnetism. Here, we use magneto-optical Kerr effect (MOKE) microscopy to demonstrate that monolayer chromium triiodide (CrI 3 ) is an Ising ferromagnet with out-of-plane spin orientation. Its Curie temperature of 45 K is only slightly lower than the 61 K of the bulk crystal, consistent with a weak interlayer coupling. Moreover, our studies suggest a layer-dependent magnetic phases, showcasing the hallmark thickness dependent physical properties typical of van der Waals crystals. Remarkably, bilayer CrI3 displays suppressed magnetization with a metamagnetic effect, while in trilayer the interlayer ferromagnetism observed in the bulk crystal is restored. Our work creates opportunities for studying magnetism by harnessing the unique features of atomically-thin materials, such as electrical control for realizing magnetoelectronics, and van der Waals engineering for novel interface phenomena.

36 MATERIALS SCIENCE↗

Coherent control of magnetization precession in electrically detected time domain ferromagnetic resonance

We demonstrate coherent control of time domain ferromagnetic resonance by all electrical excitation and detection. Using two ultrashort magnetic field steps with variable time delay we control the induction decay in yttrium iron garnet (YIG). By setting suitable delay times between the two steps the precession of the magnetization can either be enhanced or completely stopped. The method allows for a determination of the precession frequency within a few precession periods and with an accuracy much higher than can be achieved using fast fourier transformation. Moreover it holds the promise to massively increase precession amplitudes in pulsed inductive microwave magnetometry (PIMM) using low amplitude finite pulse trains. Our experiments are supported by micromagnetic simulations which nicely confirm the experimental results.

36 MATERIALS SCIENCE↗

Enhanced magnetic damping in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} capped by normal metal layer

La{sub 0.7}Sr{sub 0.3}MnO{sub 3}(LSMO) and Pt capped La{sub 0.7}Sr{sub 0.3}MnO{sub 3} 20 nm thick films have been grown on SrTiO{sub 3} substrates by pulsed laser deposition. Microstrip line ferromagnetic resonance (MS-FMR) technique is then used to investigate their magnetic dynamic properties and to particularly measure the damping constant based on the frequency dependence of microwave absorption linewidth. The results show that the effective damping constant of LSMO(20nm)/Pt(5.5nm) is three times larger than that of LSMO(20nm) and the films present weak in-plane uniaxial anistropy. The enhancement of the magnetic damping constant due to the capping of Pt is the manifestaction of the generation of spin current in Pt layer. Furthermore, the spin current induces an inverse spin Hall effect (ISHE) in LSMO(20nm)/Pt(5.5nm) system, measured using the FMR in cavity with 9.8 GHz excitation frequency. The linear dependence of ISHE on microwave power validates the mechenism of spin pumping in this bilayer system.

36 MATERIALS SCIENCE↗

Negligible spin–charge conversion in Bi films and Bi/Ag(Cu) bilayers

Spin pumping experiments using ferromagnetic metals have reported highly efficient spin–charge conversion in Bi and at the Bi/Ag interface, possibly due to the inverse Rashba–Edelstein effect. However, longitudinal spin Seebeck effect experiments using the yttrium iron garnet ferrimagnetic insulator in Bi films and Bi/Ag bilayers do not show evidence of appreciable spin-to-charge conversion except the large Nernst signal inherent to Bi. These contrasting conclusions highlight the differences between magnetic metals and magnetic insulators as spin current injectors. Only the detected voltages that adhere to the inverse spin Hall effect of j C = (2e/h)θ SH j S x σ are due to spin currents.

36 MATERIALS SCIENCE↗

Effects of the next-nearest-neighbor hopping on the low-dimensional Hubbard model: ferromagnetism, antiferromagnetism, and superconductivity

The Hubbard model has attracted considerable interest due to its prototypical role in describing strongly interacting electronic systems, such as high-critical-temperature superconductors as well as many novel quantum materials. By introducing next-nearest-neighbor (NNN) hoppings to the Hubbard model, the phase diagram becomes richer, and fascinating phenomena arise in both, one-dimensional chains and square lattices, such as: antiferromagnetism, ferromagnetism, superconductivity (SC), as well as charge orders, among others. Moreover, NNN hoppings play a fundamental role in understanding effects of doping on magnetism and pairing orders in strongly interacting regimes. In this article, we review the recent progress in understanding the different competing phases of this model in one and two dimensions from a computational perspective. In conclusion, we comment on the pressing technical challenges, illustrate the controversial results concerning the emergence of the SC phase, and conclude with our perspectives on future explorations.

Hubbard model↗

Anisotropic magnetism of the Shastry-Sutherland lattice material BaNd 2 PtO 5

For this work, single crystals were grown and characterized to investigate the physical properties and magnetic ground state of BaNd 2 PtO 5 , a candidate to host physics of the Shastry-Sutherland model. Analysis of single crystal x-ray diffraction data yields an updated crystal structure, similar to the prior report but now in space group P4/mbm. Magnetization and specific heat measurements reveal an antiferromagnetic transition at T N =1.9K and a large magnetic anisotropy with in-plane magnetization much larger than out-of-plane magnetization. Single crystal neutron diffraction at zero field reveals a propagation vector of ($\frac{1}{2}$$\frac{1}{2}$$\frac{1}{2}$) for the magnetic ground state as compared to the ($\frac{1}{2}$$\frac{1}{2}$0) wave vector observed in the related body-centered material BaNd 2 ZnO 5 . The ground state is found to be a fully compensated antiferromagnet with diffraction data well fitted within the magnetic space group P S –1 (BNS setting #2.7). The ordered moment is mostly in the basal plane with nearest neighbors forming ferromagnetic dimers, however it also has a finite out-of-plane component unlike the related easy-plane materials BaNd 2 ZnO 5 and BaNd 2 ZnS 5 . Field-induced transitions are observed below T N when the field is applied within the basal plane, and in-plane anisotropy of the associated critical fields is observed. The magnetization is strongly impacted by misalignment of the field away from high symmetry directions. These results suggest complex magnetic structures may arise in the field-induced states, and they highlight the need for extreme care when studying this and related Shastry-Sutherland materials.

36 MATERIALS SCIENCE↗

Enabling room-temperature ferromagnetism in few-layered MoS 2 films via strain engineering

Strain engineering presents a promising pathway for modulating the physical properties of two-dimensional (2D) transition metal dichalcogenides materials. Here, in this study, we investigate the strain-induced magnetic behavior of diamagnetic MoS 2 films prepared by the DC magnetron sputtering technique. By applying +1% tensile strain to few-layered MoS 2 films (∼3.5 nm), we observe the emergence of room-temperature ferromagnetism with a magnetization saturation of about ∼130 emu/cm 3 , in stark contrast to bulk films (∼40 nm), which remain diamagnetic under similar conditions. Raman spectroscopy reveals a pronounced reduction in the intensity and the splitting of the E′ mode in 1% strained few-layered films, indicating a possible bond elongation and symmetry breaking under tensile stress. Additionally, x-ray absorption spectroscopy at the Mo M 3 edge further confirms a strain-induced electronic structure modification in few-layered films, with no corresponding shift observed in bulk counterparts. Moreover, the strain-induced magnetic and structural changes are largely reversible upon strain release. We attribute the origin of ferromagnetism in few-layered films to the combined influence of tensile strain and defect-assisted bond weakening, which facilitates crystal field transitions within the Mo 4d orbitals. These findings demonstrate that strain engineering can effectively induce and modulate magnetism in 2D materials, providing opportunities for developing strain-controlled spintronic applications.

36 MATERIALS SCIENCE↗

Exchange bias and magnetic properties induced by intrinsic structural distortion in CaMn{sub 3}O{sub 6} nanoribbons

Single-crystalline CaMn{sub 3}O{sub 6} nanoribbons have been synthesized by a molten-salt method. To explore the origin of the magnetism of nanosized antiferromagnetic (AFM) manganites, a comparative study has been conducted for CaMn{sub 3}O{sub 6} (CMO-1) and post-growth vacuum annealed (CMO-2) nanoribbons. A lattice expansion resulting from oxygen release during vacuum annealing is observed. Correspondingly, AFM ordering in CMO-2 is further suppressed, and ferromagnetism and spin-glass (SG)-like behavior are significantly enhanced, which are presumed attributable to the intrinsic structural distortions induced by oxygen vacancies. In this case, side and surface effects are not decisive factors. In addition, this study provided observations of the exchange bias effect in manganite nanoribbons with an AFM-SG-like-ferromagnetic (FM) structure, as compared with the typical AFM-core-FM-shell.

36 MATERIALS SCIENCE↗

Magnetic resonance in bilayers of ferrite and functionally graded piezoelectric

Highlights: • Ferromagnetic resonance in a ferrite-piezoelectric laminate is studied. • An electric field induced FMR line broadening results from bending the sample. • Ferrite layer between the two piezoelectric layers shows a large line broadening. - Abstract: The particular purpose of this paper is theoretical modeling of magnetoelectric interactions at the ferromagnetic resonance in a layered structure of a ferrite and a piezoelectric with through-thickness graded polarization. We show that using the functionally graded piezoelectric with through-thickness variation of polarization can lead to an electric field induced broadening of ferromagnetic resonance line. As an example, we consider the laminate based on the yttrium iron garnet layer which is placed between two lead zirconate titanate layers with different poling direction. The maximal ferromagnetic resonance line broadening of 9.3 Oe is obtained for the yttrium iron garnet to lead zirconate titanate layer thickness ratio of 1.7 at 9.3 GHz for E equal to 10 kV/cm.

36 MATERIALS SCIENCE↗

Hall Effect Study of the Metamagnetic Transition in the Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 Nanosheet

Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 shows a ferromagnetic (FM) transition at T C ~ 105 K with the magnetic easy axis in the ab plane, followed by a metamagnetic transition (MMT) at low temperatures when the magnetic field H is applied along the c axis, which is in sharp contrast to that of the pure Sr 4 Ru 3 O 10 , where the easy axis is along the c axis and the MMT is in the ab plane. Here, we studied the MMT in the Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 nanosheet by the Hall effect. It was found that the ordinary Hall coefficient of Sr 4 (Ru 0.99 Fe 0.01 ) 3 O 10 is almost the same as that of the pure Sr 4 Ru 3 O 10 , while a sudden increase in the Hall resistance R xy is observed below ~50 K, above which the R xy presents the conventional anomalous Hall effect up to T C . Analysis of the results indicates that the MMT has no direct correlation to the electronic structure but closely relates to the magnetic moment locking, where the magnetic-field-induced breakdown of the locked moments is responsible for the MMT.

36 MATERIALS SCIENCE↗