DOE OSTI · 3003350
Enabling room-temperature ferromagnetism in few-layered MoS 2 films via strain engineering
Abstract
Strain engineering presents a promising pathway for modulating the physical properties of two-dimensional (2D) transition metal dichalcogenides materials. Here, in this study, we investigate the strain-induced magnetic behavior of diamagnetic MoS 2 films prepared by the DC magnetron sputtering technique. By applying +1% tensile strain to few-layered MoS 2 films (∼3.5 nm), we observe the emergence of room-temperature ferromagnetism with a magnetization saturation of about ∼130 emu/cm 3 , in stark contrast to bulk films (∼40 nm), which remain diamagnetic under similar conditions. Raman spectroscopy reveals a pronounced reduction in the intensity and the splitting of the E′ mode in 1% strained few-layered films, indicating a possible bond elongation and symmetry breaking under tensile stress. Additionally, x-ray absorption spectroscopy at the Mo M 3 edge further confirms a strain-induced electronic structure modification in few-layered films, with no corresponding shift observed in bulk counterparts. Moreover, the strain-induced magnetic and structural changes are largely reversible upon strain release. We attribute the origin of ferromagnetism in few-layered films to the combined influence of tensile strain and defect-assisted bond weakening, which facilitates crystal field transitions within the Mo 4d orbitals. These findings demonstrate that strain engineering can effectively induce and modulate magnetism in 2D materials, providing opportunities for developing strain-controlled spintronic applications.
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Chuang, Kai-Wei [National Tsing Hua Univ., Hsinchu (Taiwan)] (ORCID:0009000672870410), Anbalagan, Aswin kumar [National Tsing Hua Univ., Hsinchu (Taiwan); Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)] (ORCID:0000000155112083), Wong, Yuan-Jhen [National Chung Cheng Univ., Chia-Yi (Taiwan)] (ORCID:0000000251369380), Sabbah, Amr [Academia Sinica, Taipei (Taiwan); National Taiwan Univ., Taipei (Taiwan)] (ORCID:0000000345321732), Wu, Ming-Hsuan [National Tsing Hua Univ., Hsinchu (Taiwan)], Chaudhary, Mayur [National Tsing Hua Univ., Hsinchu (Taiwan)] (ORCID:0000000339775447), Kisslinger, Kim [Brookhaven National Laboratory (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)] (ORCID:0000000265287044), Haw, Shu-Chih [National Synchrotron Radiation Research Center, Hsinchu (Taiwan)] (ORCID:0009000895298204), Chiang, Ching-Yu [National Synchrotron Radiation Research Center, Hsinchu (Taiwan)] (ORCID:0000000236400474), Chueh, Yu-Lun [National Tsing Hua Univ., Hsinchu (Taiwan); National Sun Yat-sen Univ., Kaohsiung (Taiwan); Korea Univ., Seoul, (Korea, Republic of)] (ORCID:0000000201559987), Chen, Li-Chyong [National Taiwan Univ., Taipei (Taiwan)] (ORCID:0000000163737729), Barbour, Andi M. [Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)] (ORCID:0000000326317500), Chang, Huang-Wei [National Chung Cheng Univ., Chia-Yi (Taiwan)] (ORCID:0000000304863279), Walter, Andrew L. [Brookhaven National Laboratory (BNL), Upton, NY (United States). National Synchrotron Light Source II (NSLS-II)] (ORCID:0009000242158546), Lee, Chih-Hao [National Tsing Hua Univ., Hsinchu (Taiwan)] (ORCID:0000000238986421). 2025-11-04. Enabling room-temperature ferromagnetism in few-layered MoS 2 films via strain engineering. https://doi.org/10.1063/5.0281001
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