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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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We demonstrate a silicon photonic integrated circuit fabricated through the CMOS manufacturing process, which features a bidirectionally pumped microring to achieve over 116 high-fidelity polarization entangled channels covering the entire optical C+L-band for flex-grid entanglement distribution.
This report details the test setup, process, and results for radiated susceptibility testing of multicrystalline silicon photovoltaic (PV) modules as part of the EMP-Resilient Electric Grid Grand Challenge Laboratory Directed Research and Development (LDRD) project at Sandia National Laboratories. Testing was conducted over October 10-17, 2019, where 8 photovoltaic modules were exposed to E1 transient pulses with peak field levels up to 100 kV/m. Modules were terminated in a resistive load representing connected components. State of health testing conducted via I-V curve tracing of the photovoltaic modules showed no observable loss of device function due to large electric field transients. Differential mode currents were measured on the order of 10's of amps for up to a microsecond following the radiated field pulse. Common mode currents took the form of a damped sinusoid with a maximum peak of 10's to 100's of amps with a resonance near 60 MHz.
Two models were developed to predict glycolate concentration factors across the 242-25H (3H) Evaporator system. The first model, identified as the Unrestricted Evaporation Model, was designed to evaluate concentration of typical 3H feed material to relatively high densities in order to calculate the concentration factor of glycolate in a given feed stream. This model may be used to understand the potential of glycolate to concentrate from a generic feed material through the 3H system. The second model, identified as the Holistic Evaporation Model, was designed to evaluate the evaporation of dilute, glycolate-containing Defense Waste Processing Facility (DWPF) waste with the requirement that high silicon concentrations typical of recycle material require dilution to adhere to current technical safety requirements. This model may be used to understand the potential of glycolate from DWPF recycle material to concentrate as a result of feeding through the 3H system.
Our benchmarking method includes bottom-up accounting for all necessary system and projectdevelopment costs incurred when installing residential, commercial, and utility-scale systems, and it models the Q1 2021 costs for such systems, excluding any previous supply agreements or contracts. In general, we attempt to model the typical installation techniques and business operations from an installed-cost perspective, and our benchmarks are national averages. The residential PV-only benchmark and the commercial rooftop PV-only benchmark average costs by inverter type (string inverters, string inverters with direct current [DC] optimizers, and microinverters), weighted by inverter market share. The residential PV-only benchmark is further averaged across small installer and national integrator business models, weighted by market share. All benchmarks include variations—accounting for the differences in size, equipment, and operational use (particularly for storage)—that are currently available in the marketplace. All benchmarks assume nonunionized construction labor; residential and commercial PV systems predominantly use nonunionized labor, and the type of labor required for utility-scale PV systems depends heavily on the development process. All benchmarks assume the use of monofacial monocrystalline silicon PV modules. Benchmarks using cadmium telluride or bifacial modules could result in significantly different results. The data in this annual benchmark report inform the formulation of and track progress toward the U.S. Department of Energy (DOE) Solar Energy Technologies Office’s Government Performance and Reporting Act cost targets.
Metal oxide silicon field effect transistors for integrated circuitry in data processing
A conceptual optical method and some test results are presented for measuring the surface temperature distribution on one of the rotating turbine blades with a surface resolution of 0.05 cm spot diameter at a tip speed of 400 m/sec. The blade is scanned line-by-line by a fixed optical system. During each line-scan, the detector analog output signal is converted to two hundred consecutive digital values that are temporarily stored in a high speed buffer memory, and then transferred at a slower rate to a computer for processing. The signal-to-noise ratio of the silicon avalanche detector is large enough to obtain an accuracy of one percent at 1050 K blade temperature. By averaging 25 scans of the same line the same accuracy can be obtained at 900 K.
Composites synthesized from bismaleimide have superior strength and oxidation resistance at elevated temperatures when compared with similar composites prepared with epoxy or silicon polymers of similar cost. Polyimide synthesis technique and processing method yield essentially void-free fiber-glass reinforced composites.
A conceptual optical method and some test results are presented for measuring the surface temperature distribution on one of the rotating turbine blades with a surface resolution of 0.05 cm spot diameter at a tip speed of 400 m/sec. The blade is scanned line-by-line by a fixed optical system. During each line-scan, the detector analog output signal is converted to 200 consecutive digital values that are temporarily stored in a high-speed buffer memory and then transferred at a slower rate to a computer for processing. The signal-to-noise ratio of the silicon avalanche detector is large enough to obtain an accuracy of 1% at 1050 K blade temperature. By averaging 25 scans of the same line the same accuracy can be obtained at 900 K.
Technique of producing silicon sheets by drawing gridlike or porous graphite gauze through silicon melt is readily adaptable to mass production, making process applicable to inexpensive manufacture of solar cell arrays.
An experimental method is described for measuring the density of oxide traps in the gate oxide of an MOS transistor as a function of energy and position near the silicon interface. Measurements are obtained from different oxide growth processes and after Co-60 irradiation. The results are related to long-term drift of threshold voltage.
Modifications in inverted Stepanov process improve heat transfer and energy efficiency in growing silicon ribbon crystals. Using system, silicon is directly heated by induction, minimizing heat transfer and contamination problems.
Fluorine implantation increases minority-carrier lifetime in silicon by factor of 100, enhancing power efficiency in MOS applications. Implantation does not increase microdefects at silicon surface when thin oxide layers are grown, and process gathers existing impurities near surface without adversely affecting MOS electrical parameters. With these advantages, fluorine may be left on wafer surfaces after processing.
Consideration is given to the Si contents of Fe-Ni grains in highly unequilibrated chondrites, which have undergone little metamorphosis and thus best preserve the record of processes in the solar nebula. Electron microprobe determinations of silicon content in grains of the Bishunpur chondrite are presented for the six Si-bearing Fe-Ni grains for which data could be obtained, five of which were found to be embedded in olivine chondrules. In addition, all grains are found to be Cr-rich, with Cr increased in concentration towards the grain edge, and to be encased in FeS shells which evidently preserved the Si that entered the FeNi at higher temperatures. A mechanism for the production of Si-bearing metal during the condensation of the cooling solar nebula is proposed which considers the metal to have condensed heterogeneously while the mafic silicates condensed homogeneously with amounts of required undercooling in the low-pressure regions where ordinary and carbonaceous chondrites formed, resulting in Si mole fractions of 0.003 at nebular pressures less than 0.000001 atm.
We report here progress in a program designed to examine the feasibility of large scale production of low-cost silicon sheet substrates for solar cells by the EFG process. A multiple-ribbon EFG station, containing five single-ribbon cartridges, has been continuously operated for a period of 15 hours at a duty cycle of 94%. The average width of the ribbon grown was 5 cm, and the average growth speed was 3.4 cm/min. The cartridge concept of ribbon growth has been extended to successfully grow 10 cm wide ribbon at speeds up to 4 cm/min. Large area (approximately 50 sq cm) solar cells with efficiencies in the range from 8% to 11% (AM1) have been made from ribbon grown in the cartridge systems.
The processing of materials in a low-gravity (low-g) or microgravity environment is investigated by NASA for scientific and commercial utilization, and process and product development. The elimination of gravity is shown to create unique materials, and improve ground-based processes, such as convection, sedimentation, buoyancy, and containerless processing. Commercial applications are discussed, including the manufacturing of silicon ribbon, turbine blades, and various pharmaceuticals in space. Commercial incentives and needs are also discussed, including the technical exchange agreement, in which NASA and a company agree to cooperate in the conduct and analysis of research programs. In addition to establishing and demonstrating scientific and technological precepts for analyzing and using low-g environments, NASA is establishing legal and management mechanisms to share cost and risk of early commercial ventures.
Silicon wafers subjected to gettering in phosphorus atmosphere have longer diffusion lengths and higher solar-cell efficiencies than untreated wafers. Gettering treatment improves properties of solar cells manufactured from impure silicon and is compatible with standard solar-cell processing.
Solar cells have been fabricated from 0.1 ohm-cm, p-type silicon by means of a two-step diffusion process of emitter formation in order to delineate the factors limiting V(oc) in conventionally structured cells with the goal of achieving 700 mV. The cells are 200 microns thick and 2 x 2 cm in area with a planar front surface that has an anti-reflection coating of tantalum oxide, as well as Cr-Au-Ag contact metallization on both sides of the cell. The Cr-Au-Ag is applied over an aluminum diffused layer on the back, while it is applied through small holes in the anti-reflection coating on the front. Results show that the best of these cells exhibits an open-circuit voltage of 654 mV under AMO illumination.
This paper reviews the application of ion implantation to emitter and back surface field formation in silicon space solar cells. Experiments based on 2 ohm-cm boron-doped silicon are presented. It is shown that the implantation process is particularly compatible with formation of a high-quality back surface reflector. Large area solar cells with AM0 efficiency greater than 14 percent are reported.