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At least 1,387 records · Page 77

Chemical Bonding Governs Complex Magnetism in MnPt 5 P

Subtle changes in chemical bonds may result in dramatic revolutions in magnetic properties in solid-state materials. MnPt 5 P, a derivative of the rare-earth-free ferromagnetic MnPt 5 As, was discovered and is presented in this work. Specifically, MnPt 5 P was synthesized, and its crystal structure and chemical composition were characterized by X-ray diffraction as well as energy-dispersive X-ray spectroscopy. Accordingly, MnPt 5 P crystallizes in the layered tetragonal structure with the space group P4/mmm (No. 123), in which the face-shared Mn@Pt 12 polyhedral layers are separated by P layers. In contrast to the ferromagnetism observed in MnPt 5 As, the magnetic properties measurements on MnPt 5 P show antiferromagnetic ordering occurs at ~188 K with a strong magnetic anisotropy in and out of the ab-plane. Moreover, a spin-flop transition appears when a high magnetic field is applied. An A-type antiferromagnetic structure was obtained from the analysis of powder neutron diffraction (PND) patterns collected at 150 and 9 K. Calculated electronic structures imply that hybridization of Mn-3d and Pt-5d orbitals is critical for both the structural stability and observed magnetic properties. Semiempirical molecular orbitals calculations on both MnPt 5 P and MnPt 5 As indicate that the lack of 4p character on the P atoms at the highest occupied molecular orbital (HOMO) in MnPt 5 P may cause the different magnetic behavior in MnPt 5 P compared to MnPt 5 As. The discovery of MnPt 5 P, along with our previously reported MnPt5As, parametrizes the end points of a tunable system to study the chemical bonding which tunes the magnetic ordering from ferromagnetism to antiferromagnetism with the strong spin–orbit coupling (SOC) effect.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Magnetically dependent photovoltages in permalloy films and gratings

Significant photoinduced voltages observed in permalloy structures consist of two contributions with different origins, which depend on illumination conditions, structure geometry and magnetic field in distinct ways. The first component is the plasmon drag effect voltage closely associated with plasmon propagation. The second contribution is magnetically dependent and can be related to photoinduced gradients in the sample temperature and spin polarization. Possible mechanisms of the effect are discussed

36 MATERIALS SCIENCE↗

First principles study of the magnetic properties of LaOMnAs

Recent experiments reported giant magnetoresistance at room temperature in LaOMnAs. Here, a density functional theory calculation is performed to investigate magnetic properties of LaOMnAs. The ground state is found to be the G-type antiferromagnetic order within the ab plane but coupled ferromagnetically between planes, in agreement with recent neutron investigations. The electronic band structures suggest an insulating state which is driven by the particular G-type magnetic order, while a metallic state accompanies the ferromagnetic order. This relation between magnetism and conductance may be helpful to qualitatively understand the giant magnetoresistance effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Anomalous negative electrocaloric effect in a relaxor/normal ferroelectric polymer blend with controlled nano- and meso-dipolar couplings

In general, a dielectric material will eject (or absorb) heat when an electric field is applied and absorb (or eject) heat when the field is removed, under isothermal condition, which is known as the normal (or negative) electrocaloric (EC) effect. For some applications, it is highly desired that an EC material will absorb heat (cooling the surrounding) without subsequent heating under an electric pulse. Here, we show that such an EC material can be realized in a properly designed hybrid normal ferroelectric/relaxor ferroelectric polymer blend in which the normal ferroelectric component induces dipole ordering in the relaxor polymer in the poled state, which can be switched to a de-poled state by an external field. More importantly, the de-poled state can be maintained by the relaxor component when the de-poling field is removed. Consequently, the hybrid blend exhibits a large cooling (an isothermal entropy change ΔS = 11.5 J kg -1 K -1 ) without the subsequent heating upon the application of an electric pulse.

36 MATERIALS SCIENCE↗

Ferromagnetic resonators synthesized by metal-organic decomposition epitaxy

Abstract Metal-organic decomposition epitaxy is an economical wet-chemical approach suitable to synthesize high-quality low-spin-damping films for resonator and oscillator applications. This work reports the temperature dependence of ferromagnetic resonances and associated structural and magnetic quantities of yttrium iron garnet nanofilms that coincide with single-crystal values. Despite imperfections originating from wet-chemical deposition and spin coating, the quality factor for out-of-plane and in-plane resonances approaches 600 and 1000, respectively, at room temperature and 40 GHz. These values increase with temperature and are 100 times larger than those offered by commercial devices based on complementary metal-oxide semiconductor voltage-controlled oscillators at comparable production costs.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Memristive Effects in Nanopatterned Permalloy Kagomé Array

Here, we study memristive effects in kagomé nanopatterned permalloy. We observe that at low frequencies a thermistor effect is present, a phenomenon arising due to the lithography and absent in similar experiments for thin films. However, we also show via an independent anisotropic magnetoresistive study that a small hysteresis accounting for 1% of the effect is not attributable to a thermistive effect. Such an effect is also confirmed by a careful subtraction scheme between nearby thermal hysteresis. In the millihertz regime, an effective model is provided to describe the experimental results for the thermistor, showing that there should be a crossover from the millihertz to the gigahertz, from a thermistor to a memristive effect for nanopatterned permalloy.

36 MATERIALS SCIENCE↗

Thermal Hall effect in a van der Waals triangular magnet FeCL 2

Thermal transport is a pivotal probe for studying low-energy, charge-neutral quasiparticles in insulating magnets. In this Letter, we report an observation of large magnetothermal conductivity and thermal Hall effect (THE) in a van der Waals antiferromagnet FeCl 2 . The magnetothermal conductivity reaches over ~700%, indicating strong magnon-phonon coupling. Furthermore, we find an appreciable thermal Hall signal which changes sign concurrently with the spin-flip transition from the antiferromagnetic state to the polarized ferromagnetic state. Our theoretical calculations suggest that, in addition to the Berry curvature induced at the anticrossing points of the hybridized magnon and acoustic phonon modes of FeCl 2 , other mechanisms are needed to account for the magnitude of the observed THE.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Symmetry-lowering lattice distortion at the spin reorientation in MnBi single crystals

Here we report structural and physical properties determined by measurements on large single crystals of the anisotropic ferromagnet MnBi. The findings support the importance of magnetoelastic effects in this material. X-ray diffraction reveals a structural phase transition at the spin reorientation temperature T SR = 90 K. The distortion is driven by magneto-elastic coupling, and upon cooling transforms the structure from hexagonal to orthorhombic. Heat capacity measurements show a thermal anomaly at the crystallographic transition, which is suppressed rapidly by applied magnetic fields. Effects on the transport and anisotropic magnetic properties of the single crystals are also presented. Increasing anisotropy of the atomic displacement parameters for Bi with increasing temperature above T SR is revealed by neutron diffraction measurements. It is likely that this is directly related to the anisotropic thermal expansion in MnBi, which plays a key role in the spin reorientation and magnetocrystalline anisotropy. Finally, the identification of the true ground state crystal structure reported here may be important for future experimental and theoretical studies of this permanent magnet material, which have to date been performed and interpreted using only the high temperature structure.

36 MATERIALS SCIENCE↗

Error-Free and Current-Driven Synthetic Antiferromagnetic Domain Wall Memory Enabled by Channel Meandering

We propose a new type of energy-efficient multi-bit magnetic memory based on current-driven, field-free, controlled domain wall motion. A meandering domain wall channel with precisely interspersed pinning regions provides the multi-bit capability of a magnetic tunnel junction memory. The magnetic free layer of the memory device has perpendicular magnetic anisotropy (PMA) and interfacial Dzyaloshinskii-Moriya interaction (DMI) so that spin-orbit torques (SOTs) induce efficient domain wall motion. Using micromagnetic simulations, we find two different cell designs: two-way switching and four-way switching. The memory cell design choices and the physics of pinning mechanisms are discussed in detail. Furthermore, we show that switching reliability and speed may be significantly improved by replacing the ferromagnetic free layer with a synthetic antiferromagnetic (SAF) layer. Switching behavior and material choices will be discussed for the two memory implementations.

magnetic domain wall↗

High-gradient permanent magnet apparatus and its use in particle collection

A high-gradient permanent magnet apparatus for capturing paramagnetic particles, the apparatus comprising: (i) at least two permanent magnets positioned with like poles facing each other; (ii) a ferromagnetic spacer separating the like poles; and (iii) a magnetizable porous filling material in close proximity to the at least two permanent magnets. Also described is a method for capturing paramagnetic particles in which a gas or liquid sample containing the paramagnetic particles is contacted with the high-gradient permanent magnet apparatus described above; wherein, during the contacting step, the gas or liquid sample contacts the magnetizable porous filling material of the high-gradient permanent magnet apparatus, and at least a portion of the paramagnetic particles in the gas or liquid sample is captured on the magnetizable porous filling material.

47 OTHER INSTRUMENTATION↗

Layer-dependent spin-orbit torques generated by the centrosymmetric transition metal dichalcogenide β–MoTe 2

Single-crystal materials with sufficiently low crystal symmetry and strong spin-orbit interactions can be used to generate novel forms of spin-orbit torques on adjacent ferromagnets, such as the out-of-plane antidamping torque previously observed in WTe 2 /ferromagnet heterostructures. Here, we present measurements of spin-orbit torques produced by the low-symmetry material β-MoTe 2 , which, unlike WTe 2 , retains bulk inversion symmetry. Here, we measure spin-orbit torques on β-MoTe 2 /Permalloy heterostructures using spin-torque ferromagnetic resonance as a function of crystallographic alignment and MoTe 2 thickness down to the monolayer limit. We observe an out-of-plane antidamping torque with a spin-torque conductivity as strong as 1/3 of that of WTe 2 , demonstrating that the breaking of bulk inversion symmetry in the spin-generation material is not a necessary requirement for producing an out-of-plane antidamping torque. We also measure an unexpected dependence on the thickness of the β-MoTe 2 —the out-of-plane antidamping torque is present in MoTe 2 /Permalloy heterostructures when the β-MoTe 2 is a monolayer or trilayer thick, but goes to zero for devices with bilayer β-MoTe 2 .

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ising-Type Single-Segment Ferromagnetic Nanowire with Core/Shell: the Dependences of the Angle, Temperature, and Geometry

The hysteresis properties of a nanostructure are affected by many factors, such as the material of the nanostructure, the shape and size of the nanostructure, the orientation of the magnetizing field. In the present study, the influence of angle, temperature, and geometry on an Ising-type single-segment ferromagnetic nanowire with core/shell are studied by the effective-field theory with correlations. The behavior of the coercivity is presented by means of phase diagrams in the seven different planes and detected the magnetic characteristics of the nanowire. We find that the magnetic hardness decreases as the angle and temperature increase. We also observe that hysteresis behaviors of ferromagnetic nanowire have strong dependence on interlayer length, shell length, and wire length.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Doping Effect on Ferromagnetic Arrangement and Electronic Structure of Cubic AlAs with Low Concentration of 3d (V, Cr, and Mn) Impurities

The doping effect of aluminum arsenide (AlAs) with 3d (TM = V, Cr, and Mn) of transition metal impurities gives new materials called diluted magnetic semiconductors, which have interesting electronic and magnetic properties for spintronics applications. We have used the full-potential linearized augmented plane wave (FP-LAPW) method to calculate the electronic band structures and magnetic properties of Al{sub 1−x}TM{sub x}As at low concentration x = 0.0625 of transition metal (TM = V, Cr, and Mn) atoms. We have found that the majority-spin states of Al{sub 0.9375}TM{sub 0.0625}As compounds are metallic due to large p-d hybridization between 3d levels of TM and the 4p levels of As around Fermi level, whereas the minority-spin states have semiconductor character. These compounds exhibit a half-metallic behavior with spin polarization of 100%, where the ferromagnetism is originated from double-exchange mechanism. Therefore, Al{sub 0.9375}TM{sub 0.0625}As (TM = V, Cr, and Mn) materials seem to be good candidates for spin injection in the field of spintronics applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Magnetic remanence in Yb{sub 14−x}RE{sub x}MnSb{sub 11} (RE=Tb, Dy, Ho) single crystals

Single crystals of Yb{sub 14−x}RE{sub x}MnSb{sub 11} (x~0.1, 0.4; RE = Tb, Dy, Ho) have been prepared as a solid solution by Sn flux reactions of the elements. They crystallize in the Ca{sub 14}AlSb{sub 11} structure type in the I4{sub 1}/acd space group. The RE{sup 3+}preferentially substitutes on the Yb(1) site which is the smallest volume Yb containing polyhedron. In the case of Ho{sup 3+}, a small amount of Ho{sup 3+} also substitutes on the Yb(4) site. The ferromagnetic ordering temperature of Yb{sub 14}MnSb{sub 11} is reduced from 53 K to 41 K as x increases and dependent on the identity of the RE. This is attributed to the reduction in carriers and reduced screening of the Mn{sup 2+} local moment. The effective moments, μ{sub eff,} agree well with the calculated moments assuming the RE substitutes as a trivalent cation. The largest coercive field is observed for RE = Dy (1000 Oe). For the maximum x of Yb{sub 14−x}RE{sub x}MnSb{sub 11} there are enough carriers for the Ruderman-Kittel-Kasuya-Yosida (RKKY) mechanism of magnetic coupling via conduction electrons to still be valid in describing the ferromagnetic ordering. - Graphical abstract: Field dependent susceptibility loops revealed magnetic remanence in these materials, which has not been previously observed in Yb{sub 14}MnSb{sub 11} compounds. The coercive field increases with the strength of the paramagnetic moment for the substituting rare earth and the amount of the rare earth that is substituted. Display Omitted - Highlights: • Yb{sub 14−x}RE{sub x}MnSb{sub 11} (RE=Tb, Dy, & Ho) were synthesized with x~0.2 and x~0.4. • Tb, Dy, & Ho preferentially substitute on the Yb(1) site. • Samples with the largest x and largest RE moment have the largest coercive field. • There is a split between zero field cooled and field cooled susceptibility.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Anisotropic MagnetoMemristance

Abstract In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of such technology. For this reason, we discuss the emergence of current-induced memristance in magnetic materials, known for their durability. We show analytically and numerically that a single ferromagnetic layer can possess GHz memristance, due to a combination of two factors: a current-induced transfer of angular momentum (Zhang-Li torque) and the anisotropic magnetoresistance (AMR). We term the resulting effect the anisotropic magneto-memristance (AMM). We connect the AMM to the topology of the magnetization state, within a simple model of a one-dimensional annulus-shaped magnetic layer, confirming the analytical results with micromagnetic simulations for permalloy. Our results open a new path towards the realization of single-layer magnetic memristive devices operating at GHz frequencies.

97 MATHEMATICS AND COMPUTING↗

Pressure-induced suppression of ferromagnetism in the itinerant ferromagnet LaCrSb 3

We have performed an extensive pressure-dependent structural, spectroscopic, and electrical transport study of LaCrSb 3 . The ferromagnetic phase (TC=120 K at p = 0 GPa) is fully suppressed by p = 26.5 GPa and the Cr moment decreases steadily with increasing pressure. The unit-cell volume decreases smoothly up to p = 55 GPa. We find that the bulk modulus and suppression of the magnetism are in good agreement with theoretical predictions, but the Cr moment decreases smoothly with pressure, in contrast to steplike drops predicted by theory. The ferromagnetic ordering temperature appears to be driven by the Cr moment.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Engineering helimagnetism in MnSi thin films

Magnetic skyrmion materials have the great advantage of a robust topological magnetic structure, which makes them stable against the superparamagnetic effect and therefore a candidate for the next-generation of spintronic memory devices. Bulk MnSi, with an ordering temperature of 29.5 K, is a typical skyrmion system with a propagation vector periodicity of ∼18 nm. One crucial prerequisite for any kind of application, however, is the observation and precise control of skyrmions in thin films at room-temperature. Strain in epitaxial MnSi thin films is known to raise the transition temperature to 43 K. Here we show, using magnetometry and x-ray spectroscopy, that the transition temperature can be raised further through proximity coupling to a ferromagnetic layer. Similarly, the external field required to stabilize the helimagnetic phase is lowered. Transmission electron microscopy with element-sensitive detection is used to explore the structural origin of ferromagnetism in these Mn-doped substrates. Our work suggests that an artificial pinning layer, not limited to the MnSi/Si system, may enable room temperature, zero-field skyrmion thin-film systems, thereby opening the door to device applications.

36 MATERIALS SCIENCE↗