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DOE OSTI · 1894410

Anisotropic MagnetoMemristance

Caravelli, Francesco·Iacocca, Ezio (ORCID:0000000288705106)·Chern, Gia-Wei·Nisoli, Cristano·de Araujo, Clodoaldo I. L. (ORCID:0000000328011759)
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Abstract

Abstract In the last decade, nanoscale resistive devices with memory have been the subject of intense study because of their possible use in brain-inspired computing. However, operational endurance is one of the limiting factors in the adoption of such technology. For this reason, we discuss the emergence of current-induced memristance in magnetic materials, known for their durability. We show analytically and numerically that a single ferromagnetic layer can possess GHz memristance, due to a combination of two factors: a current-induced transfer of angular momentum (Zhang-Li torque) and the anisotropic magnetoresistance (AMR). We term the resulting effect the anisotropic magneto-memristance (AMM). We connect the AMM to the topology of the magnetization state, within a simple model of a one-dimensional annulus-shaped magnetic layer, confirming the analytical results with micromagnetic simulations for permalloy. Our results open a new path towards the realization of single-layer magnetic memristive devices operating at GHz frequencies.

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97 MATHEMATICS AND COMPUTINGComputer scienceMagnetic devicesMagnetic properties and materialsMathematics

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Caravelli, Francesco, Iacocca, Ezio (ORCID:0000000288705106), Chern, Gia-Wei, Nisoli, Cristano, de Araujo, Clodoaldo I. L. (ORCID:0000000328011759). 2022-06-27. Anisotropic MagnetoMemristance. https://doi.org/10.1038/s42005-022-00942-y

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