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Focused electron beam induced etching (FEBIE) of Nb films produced a maximum etching yield of 3 Nb atoms/e − while varying beam energy, beam current, dwell time, and XeF 2 precursor working pressure. An optimized etch resolution of 17 nm was achieved.
Abstract Two‐dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin‐film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom–up methods that grow doped samples on substrates directly and top–down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next‐generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.
Halide perovskites have emerged as promising materials for memristive devices. While their pronounced electrochemical reactivity and fast ionic mobility enable numerous advantages including low-voltage operation and fast switching, the same features also render perovskite-based memristors vulnerable to metallic shunts and poor endurance, limiting their practical applications. Here, we elucidate both the resistive switching and failure mechanisms in perovskite memristors with a fluorine-doped tin oxide (FTO)/methylammonium lead triiodide (MAPbI3)/Ag structure and demonstrate a strategy to substantially enhance device durability. As opposed to commonly invoked filamentary mechanisms, electrical, structural, and spectroscopic analyses reveal that resistive switching arises from interfacial barrier modulation by reversible Ag redox reactions that drive electrochemical doping/dedoping within the perovskite. Device failure, however, originates from metallic Ag0 filamentation that ultimately forms permanent conductive pathways. Introducing an ultrathin Al2O3 interlayer at the inert-electrode interface improves device endurance by more than 30-fold, exceeding 15,000 switching cycles, without compromising other performance metrics. Interfacial characterization indicates that the Al2O3 layer modifies wettability of Ag deposits, promoting planar island growth rather than through-film filamentation. These findings establish a clear link between interfacial electrochemistry, metal precipitation behavior, and memristor reliability, highlighting inert-electrode interfacial engineering as an effective pathway toward durable perovskite-based memristors.
Cavity magnonics is an emerging research area focusing on the coupling between magnons and photons. Despite its great potential for coherent information processing, it has been long restricted by the narrow interaction bandwidth. Here, in this Letter, we theoretically propose and experimentally demonstrate a novel approach to achieve broadband photon-magnon coupling by adopting slow waves on engineered microwave waveguides. To the best of our knowledge, this is the first time that slow wave is combined with hybrid magnonics. Its unique properties promise great potentials for both fundamental research and practical applications, for instance, by deepening our understanding of the light -matter interaction in the slow wave regime and providing high -efficiency spin wave transducers. The device concept can be extended to other systems such as optomagnonics and magnomechanics, opening up new directions for hybrid magnonics.
Supported liquid membranes (SLMs) are promising in separating miscible liquid–liquid mixtures, which has been a key challenge in wastewater treatment and other applications. However, SLMs suffer from poor durability due to the loss of the liquid phase. In current work, ionic liquids (ILs) with high stability have been impregnated into polyvinylidene fluoride membranes to separate miscible benzene–heptane mixtures. The two imidazolium-based ILs, that is, 1-butyl-3-methylimidazolium hexafluorophosphate ([BMIM][PF 6 ]) and 1-butyl-3-methylimidazolium tris(pentafluoroethyl) trifluorophosphate ([BMIM][FAP]), were tested in supported ionic liquid membranes (SILMs) for the benzene–heptane separation. Both ILs show successful separation within 48 h as indicated by nuclear magnetic resonance results. Compared to the SILM with [BMIM][FAP], the SILM with [BMIM][PF 6 ] has lower throughput and higher selectivity. The higher selectivity can be attributed to the higher hydrophilicity of [BMIM][PF 6 ], which results in strong repulsion against heptane. The lower throughput can be attributed to the higher hydrophilicity as well since it lowers the solubility of benzene in [BMIM][PF 6 ]. The stability of IL in SILMs has also been investigated via multiple separation cycles. The scanning electron microscopy, weight change of SILMs, and separation results indicate that the separation efficiency of the [BMIM][PF 6 ] SILM does not degrade for up to 144 h. The SILM has been further optimized with curvature design (i.e., curved SILM) to increase the interfacial area and thus increase the separation throughput, where the curved SILM separation device was 3D-printed. Here, the findings here have important implications on design and application of SILMs in separating miscible liquid–liquid mixtures.
The advent of natural language processing and large language models (LLMs) has revolutionized the extraction of data from unstructured scholarly papers. However, ensuring data trustworthiness remains a significant challenge. In this paper, we introduce PropertyExtractor, an open-source tool that leverages advanced conversational LLMs such as Google gemini-pro and OpenAI gpt-4, blends zero-shot with few-shot in-context learning, and employs engineered prompts for the dynamic refinement of structured information hierarchies—enabling autonomous, efficient, scalable, and accurate identification, extraction, and verification of material property data. Our tests on material data demonstrate precision and recall that exceed 95% with an error rate of ∼9%, highlighting the effectiveness and versatility of the toolkit. Finally, databases for 2D material thicknesses, a critical parameter for device integration, and energy bandgap values are developed using PropertyExtractor. In particular, for the thickness database, the rapid evolution of the field has outpaced both experimental measurements and computational methods, creating a significant data gap. Our work addresses this gap and showcases the potential of PropertyExtractor as a reliable and efficient tool for the autonomous generation of various material property databases, advancing the field.
SAND2023-06720O Hod Carrier is a simple proof-of-concept library for moving data from host to NVIDIA BlueField device memory using remote direct memory access. The Hod Carrier software also facilitates research activities related to the potential uses of NVIDIA BlueField data processing unit devices. Using well-established technologies (e.g., RDMA over Infiniband), it will move data from the host to the data processing unit’s memory. This software is a middleware utility for moving data without regard to its semantic meaning. Its operation is fundamentally unaffected by storage allocation. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology & Engineering Solutions of Sandia, LLC, a wholly owned subsidiary of Honeywell International Inc., for the U.S. Department of Energy’s National Nuclear Security Administration under contract DE-NA0003525.
Capturing real-world data is critical to improving efficiency and supporting technology advancements in commercial vehicles. FleetREDI’s insights provide detailed duty cycle information and highlight unique aspects of the given dataset. Each insight delivers a quick look at the collected data by summarizing the operation and identifying key findings of the initial analysis. This FleetREDI insight explores beverage delivery tractors operating in New York City. Last-mile beverage delivery supports local bars and restaurants throughout Manhattan and the broader New York City area. Manhattan Beer Distributors is a beverage delivery company operating in Manhattan and the Bronx. Logging devices were installed in 17 vehicles, and operational data were collected between August and October 2022. Two types of vehicles were included in data collection: 7 tractors and 10 bay trucks. Using NLR’s FleetREDI data platform, this dataset provides a summary of daily operation to help understand duty cycle characteristics. This includes daily distance, fuel use, and estimated engine-produced energy consumption for 17 bay trucks and tractors that operated more than 7,500 miles in slow-speed urban operation. 
A new electrical setup for testing ECRAM devices is described in this presentation. This presentation details the background of ECRAM devices, how the B1500 is used to program ECRAM devices, and the python GUI that was created for controlling the B1500. ECRAM devices are a form of non-volatile memory. The stored data is the resistance between two of the terminals on the device. Using only the B1500, the ECRAM devices can be programmed and the state read out. This creates a simple, logical testing setup. The overall setup was successful, ECRAM devices could easily be programmed and measured. However, there is still room for improvement. Specifically, in the creation of an automated “Program” feature and a “Data Collection” feature. These features will require additional advances in the understanding of ECRAM devices but will greatly automate and improve the current data collection and application of ECRAM devices.
Provided is a Fluorescent Air Leakage Detection (FALD) system and method for locating a defect in an enclosure that uses a nontoxic fluorescent solution as a marker. The solution is aerosolized with an atomizing device and guided to defects by a gas pressure modifying device. Defects are visually located by surveying the enclosure with an ultraviolet or visible light source and identifying a location where accumulated solution fluoresces.
Wave energy converters are a nascent energy generation technology that harnesses the power in ocean waves. To assist in communicating both fundamental and complex concepts of wave energy, a small-scale portable wave tank and wave energy converter have been developed. The system has been designed using commercial off-the-shelf components, and all design hardware and software are openly available for replication. This project builds on prior research conducted at Sandia National Laboratories, particularly in the areas of WEC device design and control systems. By showcasing the principles of causal feedback control and innovative device design, SIWEED not only serves as a practical demonstration tool but also enhances the educational experience for users. This paper presents the detailed system design of this tool. Furthermore, via testing and analysis, we demonstrate the basic functionality of the system.
On-chip dynamic strain engineering requires efficient micro-actuators that can generate large in-plane strains. Inorganic electrochemical actuators are unique in that they are driven by low voltages (≈1 V) and produce considerable strains (≈1%). However, actuation speed and efficiency are limited by mass transport of ions. Minimizing the number of ions required to actuate is thus key to enabling useful “straintronic” devices. Here, it is shown that the electrochemical intercalation of exceptionally few lithium ions into WTe 2 causes large anisotropic in-plane strain: 5% in one in-plane direction and 0.1% in the other. This efficient stretching of the 2D WTe 2 layers contrasts to intercalation-induced strains in related materials which are predominantly in the out-of-plane direction. The unusual actuation of Li x WTe 2 is linked to the formation of a newly discovered crystallographic phase, referred to as Td', with an exotic atomic arrangement. On-chip low-voltage (<0.2 V) control is demonstrated over the transition to the novel phase and its composition. Within the Td'-Li 0.5-δ WTe 2 phase, a uniaxial in-plane strain of 1.4% is achieved with a change of δ of only 0.075. This makes the in-plane chemical expansion coefficient of Td'-Li 0.5-δ WTe 2 far greater than of any other single-phase material, enabling fast and efficient planar electrochemical actuation.
Artificially engineered twisted van der Waals (vdW) heterostructures have unlocked new pathways for exploring emergent quantum phenomena and strongly correlated electronic states. Many of these phenomena are highly sensitive to the twist angle, which can be deliberately tuned to tailor the interlayer interactions. This makes the twist angle a critical tunable parameter, emphasizing the need for precise control and accurate characterization during device fabrication. In particular, twisted cuprate heterostructures based on Bi 2 Sr 2 CaCu 2 O 8 + x (BSCCO) have demonstrated angle-dependent superconducting properties, positioning the twist angle as a key tunable parameter. However, the twisted interface is highly unstable under ambient conditions and vulnerable to damage from conventional characterization tools such as electron microscopy or scanning probe techniques. In this work, a fully non-invasive, polarization-resolved Raman spectroscopy approach is introduced for determining twist angles in artificially stacked BSCCO heterostructures. By analyzing twist-dependent anisotropic vibrational Raman modes, particularly utilizing the out-of-plane A 1g vibrational mode of Bi/Sr at ≈116 cm −1 , clear optical fingerprints of the rotational misalignment between cuprate layers are identified. The high-resolution confocal Raman setup, equipped with polarization control and RayShield filtering down to 10 cm −1 , allows for reliable and reproducible measurements without compromising the material's structural integrity.
Enhancing coherence in superconducting transmon qubits requires suppressing dielectric loss and quasiparticle-mediated dissipation at metal–substrate, metal–vacuum, and substrate–vacuum interfaces. We recently demonstrated a five-fold enhancement of the energy relaxation time (T₁) by encapsulating Nb thin films with a low-loss passivation layer that inhibits NbOₓ formation, thereby reducing two-level system (TLS) participation at the metal surface. To extend T₁ into the millisecond regime, we are implementing a comprehensive materials- and process-level optimization strategy. This includes engineered substrate surface treatments, evaluation of alternative low-loss superconducting and dielectric material stacks, development of ultra-low-loss capping layers, and redesigns of transmon geometries to suppress electric-field participation ratio in lossy regions. Additionally, we are pioneering novel etching processes to further lower surface participation ratios. We are also exploring novel Josephson-junction materials and device layouts to enhance coherence further. We report T₁ measurements from these efforts, with the leading devices achieving relaxation times>1 ms.
Enhancing coherence in superconducting transmon qubits requires suppressing dielectric loss and quasiparticle-mediated dissipation at metal–substrate, metal–vacuum, and substrate–vacuum interfaces. We recently demonstrated a five-fold enhancement of the energy relaxation time (T₁) by encapsulating Nb thin films with a low-loss passivation layer that inhibits NbOₓ formation, thereby reducing two-level system (TLS) participation at the metal surface. To extend T₁ into the millisecond regime, we are implementing a comprehensive materials- and process-level optimization strategy. This includes engineered substrate surface treatments, evaluation of alternative low-loss superconducting and dielectric material stacks, development of ultra-low-loss capping layers, and redesigns of transmon geometries to suppress electric-field participation ratio in lossy regions. Additionally, we are pioneering novel etching processes to further lower surface participation ratios. We are also exploring novel Josephson-junction materials and device layouts to enhance coherence further. We report T₁ measurements from these efforts, with the leading devices achieving relaxation times>1 ms.
Via a combined theoretical and experimental study, we have investigated the synthesis and performance characteristics of InGaN/Si double-junction photoelectrochemical (PEC) water splitting devices, which promise a theoretical solar-to-hydrogen conversion efficiency ~30% under AM 1.5G one-sun illumination. The double-junction photocathodes consist of a p + -InGaN top light absorber and a Si bottom p-n junction, which are connected through a nanowire tunnel junction. The effect of indium composition of the top light absorber as well as the impact of p-type Mg dopant incorporation on the PEC performance was studied. Experimentally, the sample with 32% indium composition showed a maximum photocurrent density of ~9 mA/cm 2 at 0.4 mV vs reverse hydrogen electrode (RHE) with applied bias photon-to-current efficiency (ABPE) of ~9.5%. An optimum p-type doping level ~1 × 10 17 cm -3 was also identified, which results in the best device performance as a result of optimum surface band bending as well as vertical charge carrier (hole) transport. These results also show a good agreement with our theoretical analysis. This work provides significant insights in advancing the design and development of high efficiency PEC devices for artificial photosynthesis using industry ready materials, e.g., Si and GaN, to achieve large-scale, low-cost onsite hydrogen fuel production.
The optoelectronic properties of atomically thin transition-metal dichalcogenides are strongly correlated with the presence of defects in the materials, which are not necessarily detrimental for certain applications. For instance, defects can lead to an enhanced photoconduction, a complicated process involving charge generation and recombination in the time domain and carrier transport in the spatial domain. Here, we report the simultaneous spatial and temporal photoconductivity imaging in two types of WS 2 monolayers by laser-illuminated microwave impedance microscopy. The diffusion length and carrier lifetime were directly extracted from the spatial profile and temporal relaxation of microwave signals, respectively. Time-resolved experiments indicate that the critical process for photoexcited carriers is the escape of holes from trap states, which prolongs the apparent lifetime of mobile electrons in the conduction band. As a result, counterintuitively, the long-lived photoconductivity signal is higher in chemical-vapor deposited (CVD) samples than exfoliated monolayers due to the presence of traps that inhibits recombination. Overall, our work reveals the intrinsic time and length scales of electrical response to photoexcitation in van der Waals materials, which is essential for their applications in optoelectronic devices.
The shallow donor in zinc oxide (ZnO) is a promising semiconductor spin qubit with optical access. Single indium donors are isolated in a commercial ZnO substrate using plasma focused ion beam (PFIB) milling. Quantum emitters are identified optically by spatial and frequency filtering. The indium donor assignment is based on the optical bound exciton transition energy and magnetic dependence. The emission stability of these single donors in terms of both intensity and frequency, alongside their transition linewidths less than twice the lifetime limit, highlight the promise of single In donors as optically accessible spin qubits. Here, the optical stability of single donors after FIB fabrication is promising for optical device integration required for scalable quantum technologies based on single donors in direct band gap semiconductors.