Engineering Papers⌕ Search

SEARCH · Engineering Papers

Results for “defects”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 1,315 records · Page 73
All sourcesNASA NTRSDOE OSTI
DOE OSTI2019

Atomistic simulation of defect-dislocation interactions in concentrated solid-solution alloys

The interaction between point defects and dislocations plays a crucial role in governing material properties and microstructural evolutions under external stimuli, such as mechanical deformation and irradiation. Here, we present an atomistic study of the interactions between point defects and dislocations in concentrated solid-solution alloys (CSAs). Using molecular statics and kinetic Monte Carlo methods, we demonstrate that the strain energy and stress field distribution induced by a dislocation in CSAs are highly inhomogeneous along the dislocation line, which leads to heterogeneity of defect-dislocation interactions. Specifically, the interactions are spatially different and screened by the random arrangement of different elemental species. Furthermore, such localization of defect-dislocation interaction indicates that the “dislocation-bias” mechanism that is a driving force for radiation-induced void swelling can be suppressed in concentrated alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Optical tuning of the diamond Fermi level measured by correlated scanning probe microscopy and quantum defect spectroscopy

Quantum technologies based on quantum point defects in crystals require control over the defect charge state. Here we tune the charge state of shallow nitrogen-vacancy and silicon-vacancy centers by locally oxidizing a hydrogenated surface with moderate optical excitation and simultaneous spectral monitoring. The loss of conductivity and change in work function due to oxidation are measured in atmosphere using conductive atomic force microscopy and Kelvin probe force microscopy (KPFM). We correlate these scanning probe measurements with optical spectroscopy of the nitrogen-vacancy and silicon-vacancy centers created via implantation 15–25 nm beneath the diamond surface and annealing. The observed charge state of the defects as a function of optical exposure demonstrates that laser oxidation provides a way to precisely tune the Fermi level over a range of at least 2.00 eV. We also observe a significantly larger oxidation rate for implanted surfaces compared to unimplanted surfaces under ambient conditions. Here, combined with knowledge of the electron affinity of a surface, these results suggest KPFM is a powerful, high-spatial-resolution technique to advance surface Fermi level engineering for charge stabilization of quantum defects.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Surf-Deformer: Mitigating Dynamic Defects on Surface Code via Adaptive Deformation

In this paper, we introduce Surf-Deformer, a code deformation framework that seamlessly integrates adaptive defect mitigation functionality into the current surface code workflow. It crafts several basic deformation instructions based on fundamental gauge transformations, which can be combined to explore a larger design space than previous methods. This enables more optimized deformation processes tailored to specific defect situations, restoring the QEC capability of deformed codes more efficiently with minimal qubit resources. Additionally, we design an adaptive code layout that accommodates our defect mitigation strategy while ensuring efficient execution of logical operations. Our evaluation shows that Surf-Deformer outperforms previous methods by significantly reducing the end-to-end failure rate of various quantum programs by 35× to 70×, while requiring only about 50% of the qubit resources compared to the previous method to achieve the same level of failure rate. Ablation studies show that Surf-Deformer surpasses previous defect removal methods in preserving QEC capability and facilitates surface code communication by achieving nearly optimal throughput.

Yin, Keyi↗
DOE OSTI2023

Defect Recognition for Eddy Current Testing of Spent Nuclear Fuel Canister using Convolutional Neural Network

This paper proposes an accurate and robust defect detection solution for 304L and 306L stainless steel (SS) weld. In the proposed solution, Eddy current testing (ECT) is employed to generate 2-dimensional (2D) data for samples under test with defects. The 2D data can be treated as images for deep learning-based defect detection. Since convolutional neural networks (CNNs) are powerful in processing images, CNN is employed in this study for defect detection. Experiments are conducted on a submerged arc welding (SAW) 304L SS weld sample with an artificial crack generated by waterjet cutting. The ECT data on this seeded fault sample is utilized to verify the proposed solution. For this purpose, the ECT measurement are separated as from Fault area and Normal area, which are used for CNN training. After training, the testing data is used for verification. Experimental results demonstrate the feasibility and effectiveness of the proposed solution.

Niu, Guangxing↗
DOE OSTI2020

Machine learning defect properties in Cd-based chalcogenides

Impurity energy levels in the band gap can have serious consequences for a semiconductor's performance as a photovoltaic absorber. Data-driven approaches can help accelerate the prediction of point defect properties in common semiconductors, and thus lead to the identification of potential deep lying impurity states. In this work, we use density functional theory (DFT) to compute defect formation energies and charge transition levels of hundreds of impurities in CdX chalcogenide compounds, where X = Te, Se or S. We apply machine learning techniques on the DFT data and develop on-demand predictive models for the formation energy and relevant transition levels of any impurity atom in any site. The trained ML models are general and accurate enough to predict the properties of any possible point defects in any Cd-based chalcogenide, as we prove by testing on a few selected defects in mixed chalcogen compounds CdTe 0.5 Se 0.5 and CdSe 0.5 S 0.5 . The ML framework used in this work can be extended to any class of semiconductors.

density functional theory↗
DOE OSTI2023

A Micro-scale Numerical Investigation of Internal and Interfacial Void Defects in Adhesive on Failure Behavior of Adhesively-Bonded Materials with Rough Surfaces

This paper studied the effects of air void defects on the failure behavior of adhesively-bonded materials under global shear via micro-scale computational modeling. The numerical results indicated that interfacial void defects can largely facilitate interfacial debonding of a weaker adherend/adhesive interface under shear. However, this is not the case for a stronger adherend/adhesive interface, showing the reduction on the nominal shear strength of an adhesive joint is mainly due to internal void defects. The reduced bonding performance due to voids can be improved by leveraging an appropriate surface roughness. This preliminary investigation is a first step to better understand the micro-mechanics of interfacial failure in the adhesion of a roughened/patterned adherend via surface modification(s) and an adhesive, and also shows the importance of minimizing interfacial void defects in particular at a weaker adherend/adhesive interface via different techniques.

Qiao, Yao↗
DOE OSTI2015

Phase measurements of EUV mask defects

Extreme Ultraviolet (EUV) Lithography mask defects were examined on the actinic mask imaging system, SHARP, at Lawrence Berkeley National Laboratory. Also, a quantitative phase retrieval algorithm based on the Weak Object Transfer Function was applied to the measured through-focus aerial images to examine the amplitude and phase of the defects. The accuracy of the algorithm was demonstrated by comparing the results of measurements using a phase contrast zone plate and a standard zone plate. Using partially coherent illumination to measure frequencies that would otherwise fall outside the numerical aperture (NA), it was shown that some defects are smaller than the conventional resolution of the microscope. We found that the programmed defects of various sizes were measured and shown to have both an amplitude and a phase component that the algorithm is able to recover.

42 ENGINEERING↗
DOE OSTI2022

Logic operations with active topological defects

Logic operations performed by semiconductor-based transistors are the basis of modern computing. There is considerable interest in creating autonomous materials systems endowed with the capability to make decisions. In this work, we introduce the concept of using topological defects in active matter to perform logic operations. When an extensile active stress in a nematic liquid crystal is turned on, +1/2 defects can self-propel, in analogy to electron transport under a voltage gradient. By relying on hydrodynamic simulations of active nematics, we demonstrate that patterns of activity, when combined with surfaces imparting certain orientations, can be used to control the formation and transport of +1/2 defects. We further show that asymmetric high- and low-activity patterns can be used to create effective defect gates, tunnels, and amplifiers. The proposed active systems offer the potential to perform computations and transmit information in active soft materials, including actin-, tubulin-, and cell-based systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

One-dimensional alignment of defects in a flexible metal-organic framework

Crystalline materials are often considered to have rigid periodic lattices, while soft materials are associated with flexibility and nonperiodicity. The continuous evolution of metal-organic frameworks (MOFs) has erased the boundaries between these two distinct conceptions. Flexibility, disorder, and defects have been found to be abundant in MOF materials with imperfect crystallinity, and their intricate interplay is poorly understood because of the limited strategies for characterizing disordered structures. Here, we apply advanced nuclear magnetic resonance spectroscopy to elucidate the mesoscale structures in a defective MOF with a semicrystalline lattice. We show that engineered defects can tune the degree of lattice flexibility by combining both ordered and disordered compartments. The one-dimensional alignment of correlated defects is the key for the reversible topological transition. The unique matrix is featured with both rigid framework of nanoporosity and flexible linkage of high swellability.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Defects vibrations engineering for enhancing interfacial thermal transport in polymer composites

To push upper boundaries of thermal conductivity in polymer composites, understanding of thermal transport mechanisms is crucial. Despite extensive simulations, systematic experimental investigation on thermal transport in polymer composites is limited. To better understand thermal transport processes, we design polymer composites with perfect fillers (graphite) and defective fillers (graphite oxide), using polyvinyl alcohol (PVA) as a matrix model. Measured thermal conductivities of ~1.38 ± 0.22 W m -1 K -1 in PVA/defective filler composites is higher than those of ~0.86 ± 0.21 W m -1 K -1 in PVA/perfect filler composites, while measured thermal conductivities in defective fillers are lower than those of perfect fillers. We identify how thermal transport occurs across heterogeneous interfaces. Thermal transport measurements, neutron scattering, quantum mechanical modeling, and molecular dynamics simulations reveal that vibrational coupling between PVA and defective fillers at PVA/filler interfaces enhances thermal conductivity, suggesting that defects in polymer composites improve thermal transport by promoting this vibrational coupling.

42 ENGINEERING↗
DOE OSTI2015

Effect of nonmagnetic defects on superconducting and transport properties of Ba(Fe{sub 1–x}Co{sub x}As){sub 2} high-T{sub c} superconductors

The effect of nonmagnetic defects on superconducting and transport properties of Ba(Fe{sub 0.94}Co{sub 0.06}As){sub 2} films is studied for obtaining information on the symmetry type of the order parameter for superconducting pnictides. Such defects are generated in the film by irradiation by He{sup +} ions with an energy of 200 keV. It is found that a decrease in superconducting transition temperature T{sub c} upon an increase in the concentration of nonmagnetic defects in this compound occurs much more slowly than predicted in the model assuming s{sup ±}-wave symmetry of the order parameter. Joint analysis of the influence of nonmagnetic defects on the superconducting and magnetotransport properties of such films leads to the conclusion that superconductivity is completely suppressed in them after critical disorder is attained, which assumes the s{sup ++}-wave symmetry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2015

Simulation of radiation-defect formation processes in heterostructures with self-assembled Ge(Si)/Si(001) nanoislands under neutron irradiation

TRISQD software is developed for the computer simulation of processes in which radiation defects are formed under the corpuscular irradiation of semiconductor heterostructures with lenticular nanoinclusions of various shapes. The computer program is used to study defect-formation processes in p-i-n diodes with the i region having a built-in 20-period lattice of self-assembled Ge(Si) nanoislands formed under irradiation with high-energy neutrons. It is found that the fraction of Ge(Si) nanoislands in which point radiation defects are formed under the impact of atomic-displacement cascades is ≤3% of their total number in the lattice. More than 94% of the defects are localized in the bulk of the p, n, and i regions of the diode and in silicon layers that separate sheets of Ge(Si) nanoislands.

36 MATERIALS SCIENCE↗
DOE OSTI2017

Defect specific luminescence dead layers in CdS and CdSe

CdS and CdSe are often used in optoelectronic devices whose effectiveness is may be dictated by defects in the near surface region. Luminescence is one of the main tools for studying such defects. The energy dependence of the x-ray excited optical luminescence (XEOL) spectra of these materials enables the extraction of the depth dependence of the defect distribution. Normal and time-gated XEOL spectra were obtained from these materials in the energy range 600 to 1500 eV. Here, we find that the results can best be understood in terms of a luminescence dead layer whose width depends on the position of the defect level in the band gap.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Effects of as-received defects on ceramic matrix composites properties using high-fidelity microstructures with periodic boundary conditions

The presence of microstructural defects in as-received specimens of ceramic matrix composites (CMCs) significantly influences their constitutive response and damage, highlighting the importance of characterization and quantification of these defects for accurate assessment of damage and failure in the service environment. In a recent effort, the authors developed an algorithm to generate stochastic representative volume elements (SRVEs) of Carbon fiber Silicon-Carbide-Nitride matrix (C/SiNC) CMCs based on extensive multiscale material and defect characterization data. This paper implements this algorithm within a commercial finite element solver with periodic boundary conditions (PBCs) for high-fidelity micromechanics analysis and investigation of macroscopic material behavior of C/SiNC composites. Different loading directions are used to predict the global mechanical properties, and the results are in excellent agreement with theoretical (rule of mixture) predictions. Subsequently, the effects of as-received defects on the global and local responses are investigated. The results show that intratow porosity has pronounced degradation effects on the global elastic properties and results in complex stress localization patterns, which can be attributed to potential damage initiation sites.

Khafagy, Khaled H.↗
DOE OSTI2017

The role of defects in laser-induced modifications of silica coatings and fused silica using picosecond pulses at 1053 nm: I Damage morphology

Laser-induced damage with ps pulse widths straddles the transition from intrinsic, multi-photon ionization and avalanche ionization-based ablation with fs pulses to defect-dominated, thermal-based damage with ns pulses. We investigated the morphology of damage for fused silica and silica coatings between 1 ps and 60 ps at 1053 nm. Using calibrated laser-induced damage experiments, in situ imaging, and high-resolution optical microscopy, atomic force microscopy, and scanning electron microscopy, we show that defects play an important role in laser-induced damage down to 1 ps. Three types of damage are observed: ablation craters, ultra-high density pits, and smooth, circular depressions with central pits. For 10 ps and longer, the smooth, circular depressions limit the damage performance of fused silica and silica coatings. The observed high-density pits and material removal down to 3 ps indicate that variations in surface properties limit the laser-induced damage onset to a greater extent than expected below 60 ps. Below 3 ps, damage craters are smoother although there is still evidence as seen by AFM of inhomogeneous laser-induced damage response very near the damage onset. These results show that modeling the damage onset only as a function of pulse width does not capture the convoluted processes leading to laser induced damage with ps pulses. It is necessary to account for the effects of defects on the processes leading to laser-induced damage. In conclusion, the effects of isolated defects or inhomogeneities are most pronounced above 3 ps but are still discernible and possibly important down to the shortest pulse width investigated here.

42 ENGINEERING↗
DOE OSTI2023

High external quantum efficiency (6.5%) InGaN V-defect LEDs at 600 nm on patterned sapphire substrates

Highly efficient long-wavelength InGaN LEDs have been a research focus in nitride LEDs for their potential applications in displays and solid-state lighting. A key breakthrough has been the use of laterally injected quantum wells via naturally occurring V-defects which promote hole injection through semipolar sidewalls and help to overcome the barriers to carrier injection that plague long wavelength nitride LEDs. In this article, we study V-defect engineered LEDs on (0001) patterned sapphire substrates (PSS) and GaN on (111) Si. V-defects were formed using a 40-period InGaN/GaN superlattice and we report a packaged external quantum efficiency (EQE) of 6.5% for standard 0.1 mm 2 . LEDs on PSS at 600 nm. We attribute the high EQE in these LEDs to lateral injection via V-defects.

Ewing, Jacob J.↗
DOE OSTI2026

Optical suppression of defect-related photoluminescence in GeSn

Reports of photoluminescence from GeSn grown on Ge substrates by molecular beam epitaxy have been limited. We find that one limiting factor to observing photoluminescence is due to localized defect states marked by photoluminescence at 2400 nm and originating from the Ge substrate and buffer layer. In this study, we report on an optical study utilizing doped Ge(001) substrates to effectively suppress defect-related photoluminescence in GeSn layers by filling localized defect trap states. For this experiment, a GeSn layer with Sn content up to 10.5 ± 0.5% was grown on a doped Ge(001) substrate. Analysis of the physics of the photoluminescence spectrum collected from the GeSn thin film shows an emission at the expected wavelength of 2300 nm for 10.5 ± 0.5% Sn content and the absence of the typically observed defect-related signal at 2400 nm. This understanding is further confirmed using short-pulse optical excitation of the GeSn grown on undoped Ge substrates.

Chemical vapor deposition↗
DOE OSTI2015

Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces

Chemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. As a result, altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.

36 MATERIALS SCIENCE↗