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At least 1,279 records · Page 71

Separating Silicon From Si/NaF Mixtures

New method of extracting silicon from mixture produced when silicon tetrafluoride is reduced by sodium takes advantage of lower melting point of NaF. Method is effective at temperatures up to 400 degrees C below melting point of Si. Results in energy and economic savings: simpler and smaller furnaces, less volatization loss, and high percentage of separation.

Sanjurjo, A.↗

Ampoule With Integral Feedthroughs

Bridgman-growth ampoule has molybdenum-to-quartz feedthroughs at both ends. Ampoule is vacuum-tight, protects exposed areas of furnace from corrosive vapors emanating from sample and at same time prevents changes in composition of melt due to preferential vaporization of one of components.

Crouch, R. K.↗

High Temperature Filler for Tile Gaps

Gaps between ceramic tiles filled with ceramic-coated fabric that withstands temperatures as high as 2,000 degrees F (1,300 degrees C). Reusable high-temperature gap filler is made of fabric coated with ceramic slurry and bonded in place with room-temperature-vulcanized adhesive. Procedure used in kilns and furnaces.

Holt, J. W.↗

Space processing of electronic materials

The relative values of thermal conductivity of solid and liquid HgCdTe are critically important in the design configuration of the furnaces used for Bridgman crystal growth. The thermal diffusivity of the material is closely linked to the conductivity by the defining relation D = k/rho c, where D is the diffusivity, K is the thermal conductivity, rho is the density, and c is the specific heat. The use of transient and periodic heating approaches to measure the diffusivity are explored. A system for securing and extracting heat from silica or glass tubes under high C vacuum conditions is described.

Workman, G. L.↗

Processing of silicon solar cells by ion implantation and laser annealing

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Minnucci, J. A.↗

Transient and diffusion analysis of Hg Cd Te

The solution of the one dimensional planar interface solidification problem is presented. Numerical solutions are applied to experimental solute profiles to determine the effective diffusion constant for Hg Co Te. Progress on the design and construction of a high gradient furnace is reported.

Clayton, J. C.↗

Development of an all-metal thick film cost effective metallization system for solar cells

The objectives of the investigation were to provide all-metal screenable pastes using economical base metals, suitable for application to low-to-high conductivity silicon of either conductivity type and possibly to aluminum surfaces. Experiments were conducted with variations in paste parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others. A liquid medium, intended to provide transport during the carbon fluoride decomposition was incorporated in the paste with promising results.

Ross, B.↗

Solar heated fluidized bed gasification system

A solar-powered fluidized bed gasification system for gasifying carbonaceous material is presented. The system includes a solar gasifier which is heated by fluidizing gas and steam. Energy to heat the gas and steam is supplied by a high heat capacity refractory honeycomb which surrounds the fluid bed reactor zone. The high heat capacity refractory honeycomb is heated by solar energy focused on the honeycomb by solar concentrator through solar window. The fluid bed reaction zone is also heated directly and uniformly by thermal contact of the high heat capacity ceramic honeycomb with the walls of the fluidized bed reactor. Provisions are also made for recovering and recycling catalysts used in the gasification process. Back-up furnace is provided for start-up procedures and for supplying heat to the fluid bed reaction zone when adequate supplies of solar energy are not available.

Qader, S. A.↗

Materials science

The first Spacelab space processing payload includes the following categories of hardware: (1) multiuser facilities, (2) common-support equipment, and (3) six autonomous experiments. All the hardware, with the exception of two elements (covering three experiments), will be integrated in a Spacelab double rack called the materials science double rack. The payload experimental facilities are intended to perform, during the first Spacelab mission, a number of significant pilot experiments in the fields of crystal growth, fluid physics and metallurgy, and, at the same time, to flight-verify the materials science hardware items developed (e.g., various furnaces, process chambers, etc.).

Huth, U.↗

Automated semiconductor vacuum chemical vapor deposition facility

A semiconductor vacuum chemical vapor deposition facility (totally automatic) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to the track, and sent on to the next operation. The entire process was controlled by a computer.

Source record↗

Automated semiconductor diffusion and oxidation facility

A semiconductor diffusion and oxidation facility (totally automated) was developed. Wafers arrived on an air track, automatically loaded into a furnace tube, processed, returned to track, and sent on to the next process. The entire process was controlled by a computer.

Source record↗

Development of advanced Czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness

The process development continued, with a total of nine crystal growth runs. One of these was a 150 kg run of 5 crystals of approximately 30 kg each. Several machine and process problems were corrected and the 150 kg run was as successful as previous long runs on CG2000 RC's. The accelerated recharge and growth will be attempted when the development program resumes at full capacity in FY '82. The automation controls (Automatic Grower Light Computer System) were integrated to the seed dip temperature, shoulder, and diameter sensors on the CG2000 RC development grower. Test growths included four crystals, which were grown by the computer/sensor system from seed dip through tail off. This system will be integrated on the Mod CG2000 grower during the next quarter. The analytical task included the completion and preliminary testing of the gas chromatograph portion of the Furnace Atmosphere Analysis System. The system can detect CO concentrations and will be expanded to oxygen and water analysis in FY '82.

Source record↗

Low cost Czochralski crystal growing technology. Near implementation of the flat plate photovoltaic cost reduction of the low cost solar array project

Equipment developed for the manufacture of over 100 kg of silicon ingot from one crucible by rechanging from another crucible is described. Attempts were made to eliminate the cost of raising the furnace temperature to 250 C above the melting point of silicon by using an RF coil to melt polycrystalline silicon rod as a means of rechanging the crucible. Microprocessor control of the straight growth process was developed and domonstrated for both 4 inch and 6 inch diameter. Both meltdown and melt stabilization processes were achieved using operator prompting through the microprocessor. The use of the RF work coil in poly rod melting as a heat sink in the accelerated growth process was unsuccessful. The total design concept for fabrication and interfacing of the total cold crucible system was completed.

Roberts, E. G.↗

Development of an all-metal thick-film cost-effective metallization system for solar cells

Screened electrodes made from fluorocarbon activated copper paste and silver fluoride activated copper paste, tape adhesion and scratch tests were studied. Experiments were conducted with variations in past parameters, firing conditions, including gas ambients, furnace furniture, silicon surface and others. A liquid medium intended to provide transport during the carbon fluoride decomposition, is incorporated in the paste.

Ross, B.↗

Gradient Heating Facility. Experiment cartridges. Description and general specifications

Specifications that define experiment cartridges that are compatible with the furnace of the gradient heating facility on board the Spacelab are presented. They establish a standard cartridge design independent of the type of experiment to be conducted. By using them, experimenters can design, construct, and test the hot section of the cartridge, known as the high temperature nacelle.

Breton, J.↗

Carbon-catalyzed oxidation of SO2 by NO2 and air

A series of experiments was performed using carbon particles (commercial furnace black) as a surrogate for soot particles. Carbon particles were suspended in water, and gas mixtures were bubbled into the suspensions to observe the effect of carbon particles on the oxidation of SO2 by air and NO2. Identical gas mixtures were bubbled into a blank containing only pure water. After exposure each solution was analyzed for pH and sulfate. It was found that NO2 greatly enhances the oxidation of SO2 to sulfate in the presence of carbon particles. The amount of sulfate found in the blanks was significantly less. Under the conditions of these experiments no saturation of the reaction was observed and SO2 was converted to sulfate even in a highly acid medium (pH or = 1.5).

Rogowski, R. S.↗

Liquid drop technique for generation of organic glass and metal shells

It was found that liquid drop techniques are very useful in several diverse areas. For producing very uniform metallic, organic, inorganic and, on particular, glassy shells, the liquid jet method is the most reproducible and exceptionally useful of all the techniques studied. The technique of capillary wave synchronization of the break-up of single and multiple component jets was utilized to produce uniform sized liquid drops and solid particles, and hollow liquid and solid shells. The technique was also used to encapsulate a number of liquids in impermeable spherical shells. Highly uniform glass shells were made by generating uniform drops of glass forming materials in an aqueous solution, subsequently evaporating the water, and then fusing and blowing the remaining solids in a high temperature vertical tube furnace. Experimental results are presented and the critical problems in further research in this field are discussed.

Hendricks, C. D.↗

Heat transfer analysis of the Bridgman-Stockbarger configuration for crystal growth. Part 1: Analytical treatment of the axial temperature distribution

All first order effects on the axial temperature distribution in a solidifying charge in a Bridgman-Stockbarger configuration for crystal growth are analyzed on the basis of a one dimensional model whose validity can be verified through comparison with published finite difference ana;uses of two dimensional models. The model presented includes an insulated region between axially aligned heat pipes and considers the effects of charge diameter, charge motion, thickness, and thermal conductivity of a confining crucible, thermal conductivity change at the crystal-melt interface, generation of latent heat at the interface, and finite charge length. Results are primarily given in analytical form and can be used without recourse to computer work for both improve furnace design and optimization of growth conditions in a given thermal configuration.

Jasinski, T. J.↗