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At least 1,261 records · Page 70

Topology Optimization of 3D Flow Fields for Flow Batteries

We report as power generated from renewables becomes more readily available, the need for power-efficient energy storage devices, such as redox flow batteries, becomes critical for successful integration of renewables into the electrical grid. An important aspect of a redox flow battery is the planar flow field, which is usually composed of two-dimensional channels etched into a backing plate. As reactant-laden electrolyte flows into the flow battery, the channels in the flow field distribute the fluid throughout the reactive porous electrode. We utilize topology optimization to design flow fields with full three-dimensional geometry variation, i.e., 3D flow fields. Specifically, we focus on vanadium redox flow batteries and use the optimization algorithm to generate 3D flow fields evolved from standard interdigitated flow fields by minimizing the electrical and flow pressure power losses. To understand how these 3D designs improve performance, we analyze the polarization of the reactant concentration and exchange current within the electrode to highlight how the designed flow fields mitigate the presence of electrode dead zones. While interdigitated flow fields can be heuristically engineered to yield high performance by tuning channel and land dimensions, such a process can be laborious; this work provides a framework for automating that design process.

25 ENERGY STORAGE↗

Exchange of Ions across the TiN/TaO x Interface during Electroformation of TaO x -Based Resistive Switching Devices

The valence change model describes the resistive switching in metal oxide-based devices as due to electroreduction of the oxide and subsequent electromigration of oxygen vacancies. Here, we present cross-sectional X-ray energy-dispersive spectroscopy elemental maps of Ta, O, N, and Ti in electroformed TiN/TaO 2.0 /TiN structures. O, N, and Ti were exchanged between the anode and the functional oxide in devices formed at high power (~1 mW), but the exchange was below the detection limit at low power (<0.5 mW). All structures exhibit a similar Ta-enriched and O-depleted filament formed by the elemental segregation in the functional oxide by the temperature gradient. The elemental interchange is interpreted as due to Fick’s diffusion caused by high temperatures in the gap of the filament and is not an essential part of electroformation.

36 MATERIALS SCIENCE↗

Reconfigurable Real-Time Power Grid Emulator for Systems With High Penetration of Renewables

Novel power system control and new utility devices need to be tested before their actual deployment to the power grid. To assist with such a testing need, real-time digital emulators such as RTDS and Opal-RT can be used to connect to the physical world and form a hardware in the loop (HIL) emulation. However, due to the limitations of today's computational resources, the accuracy and fidelity suffer from different levels of model reductions in purely digital simulations. CURENT has developed a reconfigurable electric grid hardware testbed (HTB) to overcome the limitations of digital emulators. The HTB has been used to develop measurement, control, modeling, and actuation techniques for a national grid with a high penetration of renewables. The power electronic-based system includes emulators for synchronous generators; photovoltaics with grid-interfacing inverter; wind turbines; induction motor loads, ZIP loads, power electronic loads; batteries; ac and dc transmission lines; short circuit faults and grid relay protection; and a multiterminal HVDC overlay including power electronics interfaces. The system contains real elements of power flow, measurement, communication, protection, and control that mimic what would be seen in an actual electric grid. This paper presents an overview of the HTB and several scenarios that have been run to determine control and actions needed for the future power grid.

24 POWER TRANSMISSION AND DISTRIBUTION↗

A wide-band monolithic quasi-optical power meter for millimeter- and submillimeter-wave applications

A novel monolithic power meter has been developed for submillimeter-wave applications (100 GHz to 10 THz). The detector is a large-area bismuth bolometer integrated on a 1.2-micron-thick dielectric membrane. This approach results in a wide-band, high-responsivity detector. The power meter is simple to fabricate, is inexpensive, and can be easily calibrated using a low-frequency network. Quasi-optical measurements at 90, 140, and 240 GHz show that the bolometer is polarization-independent and could be modeled by a simple transmission line model. Absolute power measurements at 90, 140, and 240 GHz show a + or - 5 percent accuracy and agree well with a calibrated Anritsu power meter at 90 GHz. Potential application areas are power calibration, antenna coupling efficiency measurements, and absolute power measurements from solid-state devices and far-infrared lasers at submillimeter wavelengths. Absolute output power measurements on a 220-280 GHz tripler using the quasi-optical power meter are presented as an application example.

Ling, Curtis C.↗

Self-Powered Autonomous Sensing System for Arctic Ocean using a Frequency-multiplied Cylindrical Triboelectric Nanogenerator

An autonomous sensing system for collecting environmental observations in the Arctic region is critical for the estimation and prediction of climate change. Ocean waves are a great source of energy for these sensing systems but there has been limited research done on small-scale energy harvesting applications in the Arctic Ocean (subsea or surface). The available wave energy in the Arctic Ocean is lower than the typical ocean wave energy due to the low wave frequency, height, and operating months. Although the available wave energy depends on the specific location in the Arctic Ocean, the wave height decreases everywhere during the winter (Jan-March) [1]. Our target location in this work is the Beaufort and Chukchi Seas, which are ice covered for about 195 days per year leaving only a few months (June-November) for wave energy harvesting [2]. During these few months, the average wave frequency is 0.2 Hz and the most common wave frequency is around 0.15 Hz. Many energy harvesting methods are unsuitable for use in the Arctic Ocean because of to the cold temperature, low wave frequency, and low wave height. Triboelectric nanogenerators (TENG) are one of the few energy harvesting methods that excel in these conditions. Zhong et al. [3] designed a stacked pendulum-structured TENG for low-frequency ocean wave energy and reported the device generated a peak power density of 11.2 W/m3 under the low wave frequency of 0.2 Hz. The autonomous sensing system we developed for the Arctic Ocean, the Arctic-TENG, is based on a frequency-multiplied cylindrical TENG (FMC-TENG) which is an optimized TENG configuration for Arctic Ocean conditions due to the high power density under low-frequency wave conditions [4]. Figure 1 shows an FMC-TENG with multiple pairs of free-standing triboelectric-layer mode materials (Aluminum and FEP). The mass and magnet attached to the rotor store gravitational potential energy which is released as kinetic energy when the potential energy overcomes the repulsive magnetic force generated by the opposing magnet attached to the stator. This force unbalance triggers a sudden rotation and swinging motion of the mass which increases the angular velocity of the system and therefore enhances the output power of the TENG system. The main components of the Arctic-TENG are a 3D-printed rotor and stator, electric and dielectric material adhesive tape, and bearings. All these materials were cold-soaked and tested at -40 °C in a chest freezer. Both the 3D-printed parts and adhesives were confirmed to have a minimal effect from the cold temperature. Multiple bearings were tested and the starting torque of each one was compared both at room temperature and -40 °C. The bearing with the lowest starting torque at -40 °C was selected for use in the Arctic-TENG. The Arctic-TENG was tested using an out-of-water motor-driven wave simulator (Figure 2). The wave simulator allows for controlled testing at a wave height of 0.2 m and frequencies between 0.1 Hz to 0.5 Hz. This wave simulator was used for both room temperature and -40 °C testing. The Arctic-TENG generated significantly more power at -40 °C compared to room temperature for each frequency tested. The system stored energy in a supercapacitor via a power management circuit, and the amount of energy stored per day was calculated at different wave frequencies. Based on the conditions at the proposed deployment location (days of non-ice-covered ocean and wave frequency), the amount of stored energy per year from Arctic-TENG was calculated to be enough energy for two transmissions every day. Durability testing was completed on the Arctic-TENG at room temperature to determine the lifetime. The rotor of the Arctic-TENG was attached to a DC motor and spun continuously for several millions of cycles without degradation of the electrical output, demonstrating the feasibility for long-term operation.

Jung, Hyunjun↗

Magnetic Switching in Monolayer 2D Diluted Magnetic Semiconductors via Spin‐to‐Spin Conversion

Abstract The integration of 2D van der Waals (vdW) magnets with topological insulators or heavy metals holds great potential for realizing next‐generation spintronic memory devices. However, achieving high‐efficiency spin–orbit torque (SOT) switching of monolayer vdW magnets at room temperature poses a significant challenge, particularly without an external magnetic field. Here, it is shown field‐free, deterministic, and nonvolatile SOT switching of perpendicular magnetization in the monolayer, diluted magnetic semiconductor (DMS), Fe‐doped MoS 2 (Fe:MoS 2 ) at up to 380 K with a current density of ≈7 × 10 4 A cm −2 . The in situ doping of Fe into monolayer MoS 2 via chemical vapor deposition and the geometry‐induced strain in the crystal break the rotational switching symmetry in Fe:MoS 2 , promoting field‐free SOT switching by generating out‐of‐plane spins via spin‐to‐spin conversion. An apparent anomalous Hall effect (AHE) loop shift at a zero in‐plane magnetic field verifies the existence of z spins in Fe:MoS 2 , inducing an antidamping‐like torque that facilitates field‐free SOT switching. This field‐free SOT application using a 2D ferromagnetic monolayer provides a new pathway for developing highly power‐efficient spintronic memory devices.

Chen, Siwei [Department of Mechanical Engineering ↗

Energetic Control of Redox-Active Polymers toward Safe Organic Bioelectronic Materials

Avoiding faradaic side reactions during the operation of electrochemical devices is important to enhance the device stability, to achieve low power consumption, and to prevent the formation of reactive side-products. This is particularly important for bioelectronic devices, which are designed to operate in biological systems. While redox-active materials based on conducting and semiconducting polymers represent an exciting class of materials for bioelectronic devices, they are susceptible to electrochemical side-reactions with molecular oxygen during device operation. In this work, electrochemical side reactions with molecular oxygen are shown to occur during organic electrochemical transistor (OECT) operation using high-performance, state-of-the-art OECT materials. Depending on the choice of the active material, such reactions yield hydrogen peroxide (H 2 O 2 ), a reactive side-product, which may be harmful to the local biological environment and may also accelerate device degradation. A design strategy is reported for the development of redox-active organic semiconductors based on donor–acceptor copolymers that prevents the formation of H 2 O 2 during device operation. This study elucidates the previously overlooked side-reactions between redox-active conjugated polymers and molecular oxygen in electrochemical devices for bioelectronics, which is critical for the operation of electrolyte-gated devices in application-relevant environments.

36 MATERIALS SCIENCE↗

Tetrahydrofuran Processable Organic Solar Cells with 19.45% Efficiency Realized by Introducing High Molecular Dipole Unit Into the Terpolymer

Developing organic solar cells (OSCs) processable with halogen‐free, non‐aromatic solvents is crucial for practical applications, yet challenging due to the limited solubility of most photoactive materials. Here, this study introduces high‐performance terpolymers processable in tetrahydrofuran (THF) by incorporating dithienophthalimide (DPI) into the PM6 backbone. DPI extends the absorption band, lowers HOMO levels, and improves THF solubility and film crystallinity through its large dipole moment effect. Optimal PBD‐10:L8‐BO devices processed with THF achieved a competitive power conversion efficiency (PCE) of 18.79%, approaching chloroform‐processed devices (19.04%). By introducing PBTz‐F as a second donor, ternary OSCs reached an impressive 19.45% PCE when processed with THF. This improvement stems from enhanced photon generation, improved morphology, better charge transport, longer exciton lifetimes, efficient charge dissociation and collection, and suppressed recombination. These PCEs of 18.79% and 19.45% for binary and ternary blend OSCs, respectively, represent the highest reported efficiencies for OSCs processed with halogen‐free, non‐aromatic solvents. This work demonstrates significant progress in eco‐friendly OSC fabrication, paving the way for more sustainable and commercially viable organic photovoltaic technologies.

36 MATERIALS SCIENCE↗

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR susceptibility is explored. SEGR evaluation of gamma-irradiated power MOSFETs suggests a non-significant SEGR susceptibility enhancement due to accumulated dose from gamma rays. During SEGR testing, an unexpected enhanced dose effect from heavy-ion irradiation was detected. We demonstrate that this effect could be due to direct ionization by two or more ions at the same channel location. The probability on-orbit for such an occurrence is near-zero given the low heavy-ion fluence over a typical mission lifetime, and did not affect SEGR susceptibility. The results of this work can be used to bound the risk of SEGR in power MOSFETs considered for insertion into spacecraft and instruments.

Lauenstein, Jean-Marie↗

Integrated Heat Pump Thermal Storage and Power Cycle for CSP (Final Technical Report)

Pumped thermal energy storage (PTES) is a storage system that stores electricity in thermal reservoirs. In this project, methods of integrating PTES with concentrating solar power (CSP) systems were investigated and their feasibility evaluated. Hybrid "solar-PTES" devices can provide both flexible renewable power generation as well as a variety of electricity storage services. Techno-economic models of PTES and solar-PTES were developed and used to assess their performance, cost, and commercial viability. Systems were optimized using multi-objective optimization techniques. The value that these storage devices provide to the grid was estimated using production cost modelling. Key advances made in this project include the development of detailed techno-economic models that improve state-of-the-art assessments of these technologies. Off-design models were developed and used in grid-analysis models. This work describes for the first time how PTES and solar-PTES behave over a range of operating points and assesses the value that these systems can provide to the electrical grid. Feedback was obtained from experts in the field, which clarified key technological and economic barriers that must be addressed to improve the feasibility of these devices.

14 SOLAR ENERGY↗

Voltage and Current Response Characteristics of PMU Device by PCI Simulation

Phasor Measurement Units (PMUs) are critical for the Wide Area Measurement System (WAMS), especially for real-time grid monitoring, disturbance location, and situation awareness. Once they are damaged, the stable operation of power system will be affected directly and greatly. As new electronic devices in power system, their immunity to electromagnetic pulse (EMP) events needs to be studied. In this paper, an effective impedance measurement scheme is proposed for port impedance measurement of PMU. A non-uniform transmission line model is established to eliminate the impact of fixture in the de-embedding process. Then circuit of pulse current generator is established to generate damping sinusoid and double exponential wave applied to the port. Finally, by using measured impedance as load of the generator, the voltage and current responses of different ports are calculated in the pulsed current injection (PCI) simulation. Results shows the characteristics of port impedance, voltage and current waveforms. The relation between port impedance and the waveforms is discussed.

Zhang, Liang↗

In-device Battery Failure Analysis

Lithium-ion batteries are indispensable power sources for a wide range of modern electronic devices. However, battery lifespan remains a critical limitation, directly affecting the sustainability and user experience. Conventional battery failure analysis in controlled lab settings may not capture the complex interactions and environmental factors encountered in real-world, in-device operating conditions. Here, this study analyzes the failure of commercial wireless earbud batteries as a model system within their intended usage context. Through multiscale and multimodal characterizations, the degradations from the material level to the device level are correlated, elucidating a failure pattern that is closely tied to the specific device configuration and operating conditions. The findings indicate that the ultimate failure mode is determined by the interplay of battery materials, cell structural design, and the in-device microenvironment, such as temperature gradients and their fluctuations. This holistic, in-device perspective on environmental influences provides critical insights for battery integration design, enhancing the reliability of modern electronics.

36 MATERIALS SCIENCE↗

Strehl Ratio Meter for Focusing Segmented Mirrors 1

Initial focusing segmented mirrors that must be deployed in space, such as the Next Generation Space Telescope (NGST), provide challenges not faced before in the area of adaptive optics. The devices used to focus the mirror must minimize the power used and unnecessary mechanical movement. The device described in this report requires no movable parts except for the essential actuators required to move the mirror segments. Detail description of the components can be found in Coker, 1996. The primary mirror of the NGST will consist of 9 segments, a central annular segment, surrounded by 8 segments. The entire mirror assembly will be an 8 meter nearly filled circle (with the corners of the segments clipped to allow for storage in an Atlas IIe shroud). As the segments of the primary mirror are deployed to their operational positions, they must be positioned to within small fractions of a wavelength of near infrared light. When focused, the NGST will put most of its collected li-ht into the small region near the center of its focal plane. The ratio of the total light in the diffraction limited spot about the center of the focal plane to the total light in the focal plane. The purpose of this research effort is to design and build a device that will measure Strehl ratio and to use demonstrate that the Strehl ratio can be used to focus a segmented mirror.

Olivier, Philip D.↗

Semiconductor: Supply Chain Deep Dive Assessment

In February 2021, President Biden signed Executive Order (EO) 14017, “America’s Supply Chains,” directing seven executive agencies to evaluate the resilience and security of the nation’s critical supply chains and to craft strategies for six industrial bases that underpin America’s economic and national security. See Sec. 3(b) of E.O. 14017. As part of the one-year response to EO 14017, the U.S. Department of Energy (DOE), through the national laboratories, conducted evaluations of the supply chains that encompass the Energy Sector Industrial Base, with a particular focus on technologies required to decarbonize the U.S. by 2050. This report focuses on one of these technologies, semiconductors, both conventional and wide bandgap (WBG) power electronics (PE). As noted in the 100-Day report, conventional semiconductors are a keystone technology that are essential for the operation of nearly every electronic device, including those that are critical to decarbonization, such as electric vehicles (EVs), industrial and building applications, and electricity generation and end use. In addition, power electronics have been applied to industrial equipment to improve energy efficiency and enhance controllability. Power electronics have also been used to improve the reliability of data centers and critical infrastructure, including the stabilization of the electric grid while subjected to disturbances. Increasingly, power electronics are being used to integrate renewable energy and battery storage systems, enabling new grid services and the development of microgrids. It is estimated that 30% of the electricity used in the U.S. passes through power electronic devices, and studies suggest that this number could reach 80% as power electronics are deployed in more markets. Nearly all forms of electrified transportation will depend on power electronics. Power electronic systems utilize high-capacity semiconductor devices at their core. The continued growth in power electronics depends on sustained innovation in the semiconductor industry.

29 ENERGY PLANNING, POLICY, AND ECONOMY↗

Wide-field microwave magnetic field imaging with nitrogen-vacancy centers in diamond

Non-invasive imaging of microwave (MW) magnetic fields with microscale lateral resolution is pivotal for various applications, such as MW technologies and integrated circuit failure analysis. Diamond nitrogen-vacancy (NV) center magnetometry has emerged as an ideal tool, offering micrometer-scale resolution, millimeter-scale field of view, high sensitivity, and non-invasive imaging compatible with diverse samples. However, up until now, it has been predominantly used for imaging of static or low-frequency magnetic fields or, concerning MW field imaging, to directly characterize the same microwave device used to drive the NV spin transitions. In this work, we leverage an NV center ensemble in diamond for wide-field imaging of MW magnetic fields generated by a test device employing a differential measurement protocol. The microscope is equipped with a MW loop to induce Rabi oscillations between NV spin states, and the MW field from the device-under-test is measured through local deviations in the Rabi frequency. This differential protocol yields magnetic field maps of a 2.57 GHz MW field with a sensitivity of ∼9 μT Hz −1/2 for a total measurement duration of T=357 s, covering a 340 × 340 μm 2 field of view with a micrometer-scale spatial resolution and a device-under-test input power dynamic range of 30 dB. This work demonstrates a novel NV magnetometry protocol, based on differential Rabi frequency measurement, that extends NV wide-field imaging capabilities to imaging of weak MW magnetic fields that would be difficult to measure directly through standard NV Rabi magnetometry.

crystallographic defects↗

Multimodal microscopy of extended defects in β-Ga 2 O 3 (010) EFG crystals

Beta-phase gallium oxide (β-Ga 2 O 3 ) has attracted attention in recent years as a potentially low cost, large area substrate and active layer material for high power, high temperature power electronics and sensing devices. However, growth of β-Ga 2 O 3 crystals is complicated by easily activated (100) and (001) cleavage planes, the presence of low angle grain boundaries (LAGBs) and twins, and the potential formation of polycrystalline grains. In this study, β-Ga 2 O 3 crystals were grown by the edge-defined film-fed growth technique with an (010) principal face. Two crystals with apparently randomly formed high angle grain boundaries (HAGBs) were selected and analyzed by electron backscatter diffraction, electron channeling contrast imaging, and cathodoluminescence to investigate the nature of the LAGBs and the source of the HAGB formation. It was discovered that planar LAGBs lying parallel to the (010) plane exist in the region immediately preceding the start of an HAGB. Increased misorientation across the LAGB was observed, approaching the initiation of a new grain. We present multimodal microscopy characterization, correlating misorientation and variation in optoelectronic properties with LAGBs and the associated dislocations.

14 SOLAR ENERGY↗

Effect of the divertor configuration on the JET edge radial electric field

The role of the divertor configuration and divertor plasma physics on the L–H transition is poorly understood, leading to large uncertainties in predicting the L–H power threshold in future devices. This contribution reports on edge perpendicular plasma flow measurements by Doppler backscattering in JET L–H transition experiments with the outer divertor strike-point at different positions: horizontal target (HT), vertical target (VT), and in the corner configuration (between the HT and VTs). The edge perpendicular flow was found to be significantly affected by changes in the divertor configuration in the region inside the separatrix. Our results do not show evidence for the existence of a critical edge flow shear needed to achieve H-mode for different divertor configurations, with a larger shear observed for the VT configuration. No significant change in the shear flow and in the density fluctuation level is measured preceding the L–H transition in the region just inside the separatrix. The dynamics of the L–H transitions are also influenced by the divertor configuration with divertor oscillations (DOs) observed only in the HT configuration. Interestingly, DOs are associated with marked changes in the edge perpendicular flow around the separatrix.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Unified Universal Control and Coordination of Inverter-Based Resources, and Validation for a PV + Battery Hybrid Plant

As renewable energy deployment grows, hybrid power plants (HPPs) combining photovoltaic (PV) and battery systems must evolve to offer both energy and grid stability services. These systems typically include a mix of grid-following (GFL) and grid-forming (GFM) inverters, presenting unique coordination and control challenges. This Department of Energy–funded project developed and validated a Unified Universal Control and Coordination (UUCC) framework for such PV + battery hybrid plants, enabling seamless and stable operation, including ultrafast black start, autonomous synchronization, and robust frequency and voltage regulation, under different grid conditions. The project significantly advanced the understanding of inverter-based resource (IBR) control by developing and validating three complementary system-level approaches for hybrid GFL/GFM operation: 1. A combined Virtual Resistance (VR)-based GFL and Virtual Oscillator Control (VOC)-based GFM method, where each inverter type is governed by a specialized control strategy. Together, these achieve stable, fast-response coordination, eliminating inrush current and enabling smooth black start and grid synchronization across a wide range of grid strengths. 2. A Deadbeat-based UUCC strategy, which uses discrete-time, switching-cycle-level control for both GFL and GFM inverters. This approach replaces traditional PI/PLL control with a control parameter-free, high-bandwidth framework that supports stable LVRT and instantaneous synchronization under all conditions. 3. A benchmark comparison with Siemens’ commercial GFM microgrid controller, which provided a fast baseline platform. The commercial approach decoupled v & f control was implemented on a commercial microgrid controller.The baseline commercial benchmark helped highlight superior transient response and black start performance offered by the deadbeat and VOC approaches. These technical contributions offer substantial improvements over conventional inverter control schemes, which often rely on slow phase-locked loop (PLL)-based synchronization, require careful control parameters tuning, and prone to unstable in weak grids with GFL inverters and in stiff grid with GFM inverters therefore challenging for hybrid GFL+GFM under all grid conditions. The deadbeat-based UUCC framework enables simpler, faster, and more robust operation of hybrid IBR systems using wide-bandgap (WBG) devices such as SiC power semiconductors. The rapid expansion of hybrid distributed energy resources (DERs), including residential and commercial PV-BESS installations such as Tesla Powerwall, PV with vehicle-to-grid (V2G) capability, and other integrated configurations, presents complex operational challenges for medium-voltage radial distribution feeders. These networks are subject to frequent disturbances such as faults, switching operations, rapid reclosing sequences, and feeder reconfigurations, all of which introduce dynamic stress on IBRs. In addition, planned feeder segmentation and deliberate islanding for resilience will require DERs that can autonomously perform blackstart, establish voltage and frequency references, and resynchronize with the main grid. The advanced deadbeat-based UUCC control and blackstart functionalities developed in this project directly address these requirements, enabling decentralized and autonomous operation of inverter-dominated DERs in distribution systems under a wide range of fault and reconfiguration scenarios. From a public benefit perspective, these innovations enable more reliable and cost-effective integration of renewable energy into distribution networks. The ability to autonomously black start and stabilize grids under varying grid conditions support accelerates recovery from outages and support decentralized resilient energy systems. By reducing system complexity and improving performance, this project lays critical groundwork for future inverter-dominated power grids that are clean, reliable, and accessible to all.

14 SOLAR ENERGY↗