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At least 127 records · Page 7

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NASA NTRS1978

Insulator edge voltage gradient effects in spacecraft charging phenomena

Insulating surfaces on geosynchronous satellites have been charged by geomagnetic substorms to a point where discharges occur. The electromagnetic pulses from these discharges couple into satellite electronic systems disrupting operations. Laboratory tests conducted on insulator charging have indicated that discharges appear to be initiated at insulator edges where voltage gradients can exist. An experimental investigation has been conducted to measure edge voltage gradients on silvered Teflon samples as they are charged by monoenergetic electron beams. It has been found that the surface voltage at insulator edges can be approximated by an exponential expression based on an electron current density balance. Using this expression at known breakdown conditions results in a discharge voltage gradient down the insulator edge to ground of about 150,000 V/cm.

Stevens, N. J.↗

NASA NTRS1980

Simple buck/boost voltage regulator

Circuit corrects low or high supply voltage, produces regulated output voltage. Circuit has fewer components because inductory/transformer combination and pulse-width modulator serve double duty. Regulator handles input voltage variation from as low as one half output voltage to as high as input transistor rating. Solar arrays, fuel cells, and thermionic generators might use this regulator.

Paulkovich, J.↗

NASA NTRS1980

Determination of optimum voltages of ion focusing devices using computer techniques

Electric potentials for two dimensional cross sections of ion focusing devices used in a mass spectrometer are calculated via a series of computer programs designed to compute potentials between areas of fixed voltages. Ion trajectories within these devices may be determined by computer and a histogram obtained which plots ion density against ion position along a plate of the focusing device. For each lens system, a plate voltage may be changed, the electric potentials recalculated, and a new histogram calculated in order to determine if the new voltage configuration has increased the device's efficiency. This process may be repeated until the optimum voltage values have been found for maximum particle transmission in each focusing device.

Eckstein, B. A.↗

NASA NTRS1981

Breakdown voltage of discrete capacitors under single-pulse conditions

For electrostatic capacitors the breakdown voltage is inherently related to the properties of the dielectric, with the important parameters being the dielectric field strength which is related to the dielectric constant and the dielectric thickness. These are not necessarily related to the capacitance value and the rated voltage, but generally the larger values of capacitance have lower breakdown voltages. Foil and wet slug electrolytics can withstand conduction currents pulses without apparent damage (in either direction for foil types). For solid tantalums, damage occurs whenever the capacitor charges to the forming voltage.

Domingos, H.↗

NASA NTRS1982

Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

Wilson, P. M.↗

NASA NTRS1981

Multijunction high voltage concentrator solar cells

The standard integrated circuit technology has been developed to design and fabricate new innovative planar multi-junction solar cell chips for concentrated sunlight applications. This 1 cm x 1 cm cell consisted of several voltage generating regions called unit cells which were internally connected in series within a single chip resulting in high open circuit voltages. Typical open-circuit voltages of 3.6 V and short-circuit currents of 90 ma were obtained at 80 AM1 suns. A dramatic increase in both short circuit current and open circuit voltage with increased light levels was observed.

Valco, G. J.↗

NASA NTRS1982

Partial discharge testing under direct voltage conditions

DC partial discharge (PD) (corona) testing is performed using a multichannel analyzer for pulse storing, and data is collected during increase of voltage and at quiescent voltage levels. Thus high voltage ceramic disk capacitors were evaluated by obtaining PD data interspersed during an accelerated life test. Increased PD activity was found early in samples that later failed catastrophically. By this technique, trends of insulation behavior are revealed sensitively and nondestructively in high voltage dc components.

Bever, R. S.↗

NASA NTRS1982

Optimization of the performance of a tandem microchannel plate detector as a function of interplate spacing and voltage

The effect of varying the size of the gap voltage and spacing on the performance of a tandem pair of microchannel plates (MCP) is investigated. Results show that increasing the voltage in the gap increases the gain of the pair and also produces a narrower Gaussian pulse-height distribution, although beyond a critical voltage the gain of the channel plate pair is found to plateau. A model is developed which explains the nonlinear gain behavior of individual microchannels and the behavior of the electron cloud emitted from the first MCP as it spreads out between the two MCPs and hits the surface of the second. The model calculates the plateau voltage as a function of the gap size, the gain of each MCP, and the diameter of the channels, and is found to show good agreement with the observed results. It is concluded that interplate gaps of up to several millimeters can be accommodated without a significant degradation in pulse-height distribution.

Rogers, D.↗

NASA NTRS1982

High-frequency high-voltage high-power DC-to-DC converters

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

Wilson, T. G.↗

NASA NTRS1982

Planar multijunction high voltage solar cell chip

A new innovative planar multijunction solar cell chip for concentrated sunlight applications is proposed. The chip consists of many voltage-generating regions, called unit cells, which are connected in series within a single silicon wafer, thereby providing a high open-circuit voltage at multiple sun illumination levels. The unit cells are fabricated on 75 micron thick p-type single crystal silicon substrate. Each chip consists of 1.42 x 9.63 mm n(+)/p collecting junctions on the back of the wafer, while the illuminated front surface area is divided into 0.3 micron deep n(+) regions. The fabrication sequence includes standard degreasing and cleaning procedures, double-sided alignment photomasking, introduction of boron and phosphorus impurities, and photolithography. The open circuit voltage of the chip increased rapidly with illumination up to about 4 AM1 suns, and then began to saturate at the sum of the individual unit cell voltages of 3.5 above 4 AM1 suns. A short circuit density per unit cell of 300 mA/sq cm at 20 AM1 suns was observed.

Valco, G. J.↗

NASA NTRS1985

Remotely-Adjustable Solid-State High-Voltage Supply

Pulsed or steady outputs up to 20 kV produced by commercial components. Circuit produces adjustable high-voltage output in response to low-voltage input. Output voltage changes approximately linearly up to 20 kilovolts as input voltage varied from 0 to 5 volts. Output steady, or sine wave varied at rates up to 100 pulses per second. Output current about 100 microamperes. Reduction in output-filter capacitance confers additional benefit by reducing pulse rise time.

Simms, W. T.↗

NASA NTRS1985

High voltage power supply

A high voltage power supply is formed by three discrete circuits energized by a battery to provide a plurality of concurrent output signals floating at a high output voltage on the order of several tens of kilovolts. In the first two circuits, the regulator stages are pulse width modulated and include adjustable ressistances for varying the duty cycles of pulse trains provided to corresponding oscillator stages while the third regulator stage includes an adjustable resistance for varying the amplitude of a steady signal provided to a third oscillator stage. In the first circuit, the oscillator, formed by a constant current drive network and a tuned resonant network included a step up transformer, is coupled to a second step up transformer which, in turn, supplies an amplified sinusoidal signal to a parallel pair of complementary poled rectifying, voltage multiplier stages to generate the high output voltage.

Ruitberg, A. P.↗

NASA NTRS1986

The voltage threshold for arcing for solar cells in LEO: Flight and ground test results

Ground and flight results of solar cell arcing in low Earth orbit (LEO) conditions are compared and interpreted. It is shown that an apparent voltage threshold for arcing may be produced by a strong power law dependence of arc rate on voltage, combined with a limited observation time. The change in this apparent threshold with plasma density is a reflection of the density dependence of the arc rate. A nearly linear dependence of arc rate on density is inferred from the data. A real voltage threshold for arcing for 2 by 2 cm solar cells may exist however, independent of plasma density, near -230 V relative to the plasma. Here, arc rates may change by more than an order of magnitude for a change of only 30 V in array potential. For 5.9 by 5.9 solar cells, the voltage dependence of the arc rate is steeper, and the data are insufficient to indicate the existence of an arcing increased by an atomic oxygen plasma, as is found in LEO, and by arcing from the backs of welded-through substrates.

Ferguson, D. C.↗

NASA NTRS1985

Measurement and analysis of solar cell current-voltage characteristics

Approaches to measurement and analysis of solar cell current-voltage characteristics under dark and illuminated conditions are discussed. Measurements are taken with a computer based data acquisition system for temperatures in the range of -100 to +100 C. In the fitting procedure, the various I(oi) and C(i) as well as R(S) and R(SH) are determined. Application to current-voltage analyses of high efficiency silicon cells and Boeing CdS/CuInSe2 are discussed. In silicon MINP cells, it is found that at low voltages a tunneling mechanism is dominant, while at larger voltages the I-V characteristics are usually dominated by emitter recombination. In the case of Boeing cells, a current transport model based on a tunneling mechanism and interface recombination acting in series has been developed as a result of I-V analyses.

Olsen, Larry C.↗

NASA NTRS1986

The voltage threshold for arcing for solar cells in Leo - Flight and ground test results

Ground and flight results of solar cell arcing in low earth orbit (LEO) conditions are compared and interpreted. It is shown that an apparent voltage threshold for arcing may be produced by a storage power law dependence of arc rate on voltage, combined with a limited observation time. The change in this apparent threshold with plasma density is a reflection of the density dependence of the arc rate. A nearly linear dependence of arc rate on density is inferred from the data. A real voltage threshold for arcing for 2 by 2 cm solar cells may exist however, independent of plasma density, near -230 V relative to the plasma. Here, arc rates may change by more than an order of magnitude for a change of only 30 V in array potential. For 5.9 by 5.9 solar cells, the voltage dependence of the arc rate is steeper, and the data are insufficient to indicate the existence of an arcing increased by an atomic oxygen plasma, as is found in LEO, and by arcing from the backs of welded-through substrates.

Ferguson, Dale C.↗

NASA NTRS1988

Modulated-Voltage Metastable-Ionization Detector

New detector retains sensitivity of conventional ones but automatically reduces voltage to prevent current saturation at higher values, enabling quantitative determination of relative concentrations approaching 100 percent. Detector includes feedback circuitry to prevent current saturation. When detector current begins to exceed threshold, detector high voltage reduced to keep current from rising much more. Recorder output shows detector-current and voltage-reduction signals from gas mixture with constituents both above and below threshold concentration. Those above threshold cause both current and voltage-reduction peaks. Those below threshold give rise to current peaks only.

Carle, Glenn C.↗

NASA NTRS1988

Arc lamp power supply using a voltage multiplier

A power supply is provided for an arc discharge lamp which includes a relatively low voltage high current power supply section and a high voltage starter circuit. The low voltage section includes a transformer, rectifier, variable resistor and a bank of capacitors, while the starter circuit comprises several diodes and capacitors connected as a Cockcroft-Walton multiplier. The starting circuit is effectively bypassed when the lamp arc is established and serves to automatically provide a high starting voltage to re-strike the lamp arc if the arc is extinguished by a power interruption.

Leighty, Bradley D.↗

NASA NTRS1990

High-Voltage Digital-To-Analog Converter

High-voltage 10-bit digital-to-analog converter operates under computer control to put out voltages up to 500 V at currents up to 35 mA. Circuit includes high-voltage power supply used to generate high-voltage square wave at frequency set by computer at value between 0.2 Hz and 10 Hz. Used to drive 0.02-microfarad, 1-kV capacitor at slewing rate of 1 V/microsecond to provide signal for robotic imaging system.

Huston, Steven W.↗