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At least 127 records · Page 7

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗

Visually undistorted thin film electronic devices

Visually undistorted thin film electronic devices are provided. In one embodiment, a method for producing a thin-film electronic device comprises: opening a scribe in a stack of thin film material layers deposited on a substrate to define an active region and an inactive region of the thin-film electronic device, the stack comprising at least one active semiconductor layer. The active region comprises a non-scribed area of the stack and the inactive region comprises a region of the stack where thin film material was removed by the scribe. The method further comprises depositing at least one scribe fill material into a gap opened by the scribe. The scribe fill material has embedded therein one or more coloring elements that alter an optical characteristics spectrum of the inactive region to obtain an optical characteristics spectrum of the active region within a minimum perceptible difference for an industry defined standard observer.

Hammond, Scott R.↗

Understanding non-stochiometric deposition of multi-principal elemental NiCoCr thin films

Multi-principal elemental NiCoCr thin films with compositional flexibility have potential applications as a thermal barrier, corrosion-resistant coatings, and functional energy materials. In this study, the non-stochiometric multi-principal element alloy thin film formation behavior from an equiatomic ablation target of NiCoCr using pulsed laser deposition has been reported. Here, the effect of varying laser fluence on compositions of constituent elements in the NiCoCr thin films is systematically investigated. The increase in laser fluence typically increases the likelihood of acquiring undesirable particulates in thin films. Therefore, to maintain the film quality the laser fluences are adjusted within the range of 1.3–3.3 J·cm -2 , while the film thicknesses are kept constant at ~30 nm. Results show that the constituent elements are well-distributed in the formed NiCoCr thin films, however, having average atomic percentages of Ni and Cr twice as high as Co irrespective of the equiatomic composition of individual elements in the ablation target. This stochiometric alteration in the as-deposited thin films is governed by the rate of ablation and subsequent evaporation of each element, which is facilitated by the optical properties and vapor pressure of individual constituent elements. Additionally, electron energy-loss spectroscopy and x-ray absorption spectroscopy analysis reveal that the thin films have partially oxidized, with the Cr oxidation contributing the most to the O-K edge in comparison to Ni and Co. Finally, this study presents a laser-assisted pathway for fabricating compositionally flexible NiCoCr thin films and develops an understanding of the non-equilibrium laser-material interactions and how the intrinsic properties of constituent elements affect the stoichiometric flow of materials from the target to the final film deposition.

36 MATERIALS SCIENCE↗

Titanium oxide thin films

Titanium oxide thin film capacitor with large temperature dependence for detecting infrared radiation

THIN FILM↗

Applications of Thin Film Thermocouples for Surface Temperature Measurement

Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.

Martin, Lisa C.↗

Colossal Cryogenic Electro‐Optic Response Through Metastability in Strained BaTiO 3 Thin Films

The search for thin film electro-optic materials that can retain superior performance under cryogenic conditions has become critical for quantum computing. Barium titanate thin films show large linear electro-optic coefficients in the tetragonal phase at room temperature, which is severely degraded down to ≈200 pm V −1 in the rhombohedral phase at cryogenic temperatures. There is immense interest in manipulating these phase transformations and retaining superior electro-optic properties down to liquid helium temperature. Utilizing the thermodynamic theory of optical properties, a large low-temperature electro-optic response is designed by engineering the energetic competition between different ferroelectric phases, leading to a low-symmetry monoclinic phase with a massive electro-optic response. The existence of this phase is demonstrated in a strain-tuned BaTiO 3 thin film that exhibits a linear electro-optic coefficient of 2516 ± 100 pm V −1 at 5 K, which is an order of magnitude higher than the best reported performance thus far. Importantly, the electro-optic coefficient increases by 100 × during cooling, unlike the conventional films, where it degrades. Further, at the lowest temperature, significant higher order electro-optic responses also emerge. These results represent a new framework for designing materials with property enhancements by stabilizing highly tunable metastable phases with strain.

barium titanate↗

Thin-film technology development

Thin film interconnect patterns developed for three hybrid satellite resistor, diode, and transistor circuit applications

THIN FILM↗

Characterizing Non-Uniformity of Performance of Thin-Film Solar Cells

Thin-film Solar Cells are being actively studied for terrestrial and space applications because of their potential to provide low-cost, lightweight, and flexible electric power system. Currently, thin-film solar cell performance is limited partially by the nonuniformity of performance that they typically exhibit. This nonuniformity of performance necessitates more detailed characterization techniques than the well-known macroscopic measurements such as current-voltage and efficiency. This project seeks to explore methods of characterization that take into account the spatial nonuniformity of thin-film solar cells. In this presentation we show results of electroluminescence images, short-circuit maps, and Kelvin Probe maps. All these mapping characterization and analysis tools show that the non-uniformities can correlated with device performance and efficiency.

Clark, Eric B.↗

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

superconducting films↗

The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces

Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.

superconducting films↗

Controlling antiferromagnetic domains in patterned La0.7Sr0.3FeO3 thin films

Transition metal oxide thin films and heterostructures are promising platforms to achieve full control of the antiferromagnetic (AFM) domain structure in patterned features as needed for AFM spintronic devices. In this work, soft x-ray photoemission electron microscopy was utilized to image AFM domains in micromagnets patterned into La0.7Sr0.3FeO3 (LSFO) thin films and La0.7Sr0.3MnO3 (LSMO)/LSFO superlattices. A delicate balance exists between magnetocrystalline anisotropy, shape anisotropy, and exchange interactions such that the AFM domain structure can be controlled using parameters such as LSFO and LSMO layer thickness, micromagnet shape, and temperature. In LSFO thin films, shape anisotropy gains importance only in micromagnets where at least one extended edge is aligned parallel to an AFM easy axis. In contrast, in the limit of ultrathin LSFO layers in the LSMO/LSFO superlattice, shape anisotropy effects dominate such that the AFM spin axes at micromagnet edges can be aligned along any in-plane crystallographic direction.

Lee, Michael S. (ORCID:0000000177852189)↗

Toughness distribution considerations in a thin film system

The spontaneous mechanical failure of thin films and occasionally substrates, due to the thin film deposition, are relatively common occurrences. Large internal stresses (e.g. 10 MPa to 100 MPa) are an inherent part of the thin film deposition process. In most cases where fracture mechanics has been applied to thin film systems, the failure path is confined a priori to the substrate-thin film interface or in the thin film perpendicular to that interface. This paper considers the contributions which determine the failure path and presents a qualitative model for identifying the failure path in a thin film system taking into account the presence of residual stresses. The most important aspect of this model is that it offers an explanation of the variation in the locus of failure that does not strictly depend on the weakest point of the material (i.e. the least work of fracture) being the first to fail. It does not, inherent to its construction, restrict failure to the interface a priori. The fracture mechanics criterion of the strain energy release rate equaling the material's resistance to crack growth leads to crack propagation at a specific location and defines the selection of the fracture path.

Brown, L. D.↗

Collaboration of the NASA Glenn Research Center and Rolls-Royce Developed Thin Film Multilayered Dielectrics for Harsh Environments

The use of thin films to electrically insulate thin film sensors on engine components minimizes the intrusiveness of the sensors and allows a more accurate measurement of the environment. A variety of insulating films were investigated for preventing electrical shorting caused by insulator failure between the sensor and the component. By alternating layers of sputtered high-temperature ceramics, a sequence of insulating layers was devised that (1) prevents pinholes from forming completely through the insulator and (2) maintains high electrical resistivity at high temperatures. The total thickness is only a fraction of that needed for conventional insulating techniques. The Sensors and Electronics Technology Branch of the NASA Glenn Research Center has an in-house effort to develop thin film sensors for surface measurement in propulsion system research. Thin film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner (less than 10 mm thick) than wire or foil sensors. The thin film sensors are thus much less disturbing to the operating environment and have a minimal impact on the physical characteristics of the supporting component. To further this research, NASA Glenn and Rolls-Royce (Derby, UK), with assistance from the Ohio Aerospace Institute (OAI) and the Akima Corporation, pursued a joint investigation using multilayered thin film dielectrics as a reliable insulator in harsh environments. The use of a multilayered scheme is thought to be promising for the fabrication of electrically insulating thin films. A major cause of conduction in thin film dielectrics is the presence of defects, such as pinholes, that propagate through the film to the underlying substrate surface. By alternating the insulating material, each new growth pattern would deviate from the previous one, eliminating direct pathways for conduction to the substrate. The film depositions and testing were conducted in the Instrument Research Laboratory at Glenn. The multilayered insulator test samples were made from alumina and stainless steel shims that were first covered with a sputtered underlayer of either yttria-stabilized zirconia or chromium carbide, and then overcoated with a sputtered top layer of alumina. An example of a test sample is shown in the following photograph. Each multilayered insulator sample was 5 mm thick, at least an order of magnitude thinner than conventional insulators. The insulating properties of the samples were tested in a high-temperature air oven to determine their suitability. The multilayer insulators tested showed a stabilized film at temperatures in excess of 800 C (1472 F). The underlying materials in these multilayers allow thermal expansion stresses produced during the heating to be graded. The chromium carbide-alumina multilayer had the best adhesion at high temperatures, presumably from the induced chemical bonding between the substrate and the chromium carbide underlayer. However, the zirconia-alumina multilayer proved to have slightly better insulating properties when adhering. The application of the zirconia-alumina insulator has been demonstrated on a nickel-alloy fan blade, as shown. The insulators using thin film sensors still need to be tested in a relevant high-temperature combustion environment.

Wrbanek, John D.↗

Tunable Semiconducting Behavior and Linear-Nonlinear Optical Properties of Ag–Sn Dual-Doped Nanocrystalline CdO Thin Films for Optoelectronics

Semiconductor-based thin films have a great impact on determining the anticipated optoelectronic device construction and the advancement of cutting-edge applications. Herein, Ag and Sn dual-doped nanocrystalline transparent conducting CdO thin films were prepared on glass substrates using a cost-effective spray coating method, and their structural, morphological, optical, and semiconducting behaviors were investigated. The successful incorporation of Ag and Sn resulted in the polycrystalline nature of the deposited films without the additional peaks, as verified by X-ray diffraction (XRD) analysis. The XRD report also revealed the enhanced crystallinity (65%) at the higher doping level (3 wt % Ag and Sn-doped CdO film). All the deposited CdO films exhibited homogeneous, spherical, or round-shaped grains, with agglomeration revealed by scanning electron microscopy analysis. UV–visible spectroscopy was utilized to determine the linear and nonlinear optical properties of the deposited CdO thin films, and a reduction in the band gap from 3.891 to 3.772 eV was observed. A significant enhancement in the first- and third-order nonlinear susceptibility and nonlinear refractive index of the doped CdO films was also observed with increasing doping concentration. Hall effect data were collected at room temperature to investigate the electrical properties of all of the CdO films. The charge carrier concentration of CdO thin films was increased from 142.08 × 10 18 to 169.10 × 10 18 cm –3 , and the highest conductivity was found to be 192 s/cm on doping 3 wt % Ag–Sn. All the CdO thin films exhibited n-type conductivity, while an incredible n-type to p-type charge carrier transition was noticed at a higher doping level (3 wt % Ag–Sn). The findings of the current work are expected to advance the synthesis of semiconductor thin films through cost-effective spray coating methods for optoelectronic device applications.

deposition↗

Thin-film coatings

Thin, adherent, high density films are discussed with respect to their application in two plasma physics techniques (ion plating and sputtering). The operation of each technique is described as well as what surfaces can be coated, and what kind of materials can be applied. The effects of these films on the mechanical properties of solid surfaces are also discussed.

Buckley, D. H.↗

A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators

A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.

Roeder, Jeffrey F.↗