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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS2014

Dielectric Performance of a High Purity HTCC Alumina at High Temperatures - a Comparison Study with Other Polycrystalline Alumina

A very high purity (99.99+%) high temperature co-fired ceramic (HTCC) alumina has recently become commercially available. The raw material of this HTCC alumina is very different from conventional HTCC alumina, and more importantly there is no glass additive in this alumina material for co-firing processing. Previously, selected HTCC and LTCC (low temperature co-fired ceramic) alumina materials were evaluated at high temperatures as dielectric and compared to a regularly sintered 96% polycrystalline alumina (96% Al2O3), where 96% alumina was used as the benchmark. A prototype packaging system based on regular 96% alumina with Au thickfilm metallization successfully facilitated long term testing of high temperature silicon carbide (SiC) electronic devices for over 10,000 hours at 500 C. In order to evaluate this new high purity HTCC alumina for possible high temperature packaging applications, the dielectric properties of this HTCC alumina substrate were measured and compared with those of 96% alumina and a previously tested LTCC alumina from room temperature to 550 C at frequencies of 120 Hz, 1 KHz, 10 KHz, 100 KHz, and 1 MHz. A parallel-plate capacitive device with dielectric of the HTCC alumina and precious metal electrodes were used for measurements of the dielectric constant and dielectric loss of the co-fired alumina material in the temperature and frequency ranges. The capacitance and AC parallel conductance of the capacitive device were directly measured by an AC impedance meter, and the dielectric constant and parallel AC conductivity of the dielectric were calculated from the capacitance and conductance measurement results. The temperature and frequency dependent dielectric constant, AC conductivity, and dissipation factor of the HTCC alumina substrate are presented and compared to those of 96% alumina and a selected LTCC alumina. Other technical advantages of this new co-fired material for possible high packaging applications are also discussed.

Electronic packaging↗
NASA NTRS1992

Smart materials fabrication and materials for micro-electro-mechanical systems; Symposium Proceedings, San Francisco, CA, Apr. 28-30, 1992

A conference on the rapidly developing fields of `smart materials' and micro-electro-mechanical systems produced papers in the areas of fabrication and characterization of ferroelectric thin films; polycrystalline silicon; optical, chemical, and biological sensors; thin film shape memory alloys; materials characterization; and alternative materials and applications.

Jardine, A. Peter↗
NASA NTRS2002

CARES/Life Used for Probabilistic Characterization of MEMS Pressure Sensor Membranes

Microelectromechanical systems (MEMS) devices are typically made from brittle materials such as silicon using traditional semiconductor manufacturing techniques. They can be etched (or micromachined) from larger structures or can be built up with material deposition processes. Maintaining dimensional control and consistent mechanical properties is considerably more difficult for MEMS because feature size is on the micrometer scale. Therefore, the application of probabilistic design methodology becomes necessary for MEMS. This was demonstrated at the NASA Glenn Research Center and Case Western Reserve University in an investigation that used the NASA-developed CARES/Life brittle material design program to study the probabilistic fracture strength behavior of single-crystal SiC, polycrystalline SiC, and amorphous Si3N4 pressurized 1-mm-square thin-film diaphragms. These materials are of interest because of their superior high-temperature characteristics, which are desirable for harsh environment applications such as turbine engine and rocket propulsion system hot sections.

Nemeth, Noel N.↗
NASA NTRS1972

Dimensional-stability studies of candidate space-telescope mirror-substrate materials

The effects of aging, vacuum exposure, and thermal cycling on the dimensional stability of mirror-substrate materials, fused silica, Cer-Vit, Kanigen-coated beryllium, polycrystalline silicon, and U.L.E. fused silica were investigated. A multiple-beam interferometer was used to determine nonrecoverable surface-shape changes of the 12.7-cm-diameter mirrors with substrates of these materials. Thermal cycling and aging in vacuum produced the largest changes, but only a few were as large as 1/30 wavelength, where the wavelength was 632.8 nm.

Jerke, J. M.↗
NASA NTRS2001

High Temperature Mechanical Behavior of Polycrystalline Alumina from Mixed Nanometer and Micrometer Powders

Sintered aluminum oxide materials were formed using commercial methods from mechanically mixed powders of nano-and micrometer alumina. The powders were consolidated at 1500 and 1600 C with 3.2 and 7.2 ksi applied stress in argon. The conventional micrometer sized powders failed to consolidate. While 100 percent nanometer-sized alumina and its mixture with the micrometer powders achieved less than 99 percent density. Preliminary high temperature creep behavior indicates no super-plastic strains. However high strains (less than 0.65 percent) were generated in the nanometer powder, due to cracks and linked voids initiated by cavitation.

Goldsby, Jon C.↗
NASA NTRS1982

Development of a polysilicon process based on chemical vapor deposition, phase 1

The goal of this program is to demonstrate that a dichlorosilane-based reductive chemical vapor deposition (CVD) process is capable of producing, at low cost, high quality polycrystalline silicon. Physical form and purity of this material will be consistent with LSA material requirements for use in the manufacture of high efficiency solar cells. Four polysilicon deposition runs were completed in an intermediate size reactor using dichlorosilane fed from 250 pound cylinders. Results from the intermediate size reactor are consistent with those obtained earlier with a small experimental reactor. Modifications of two intermediate size reactors were completed to interface with the dichlorosilane process demonstration unit (PDU).

Plahutnik, F.↗
NASA NTRS2006

Galfenol Tactile Sensor Array and Visual Mapping System

The smart material, Galfenol, is being explored for its uses as a magnetostrictive material. This project seeks to determine if Galfenol can be used as a tactile sensor in a 2-D grid array, magnetic circuit system. When used within a magnetic circuit, Galfenol indicates induced stress and force as a change in flux, due to a change in permeability of the material. The change in flux is detected by Giant MagnetoResistive (GMR) Sensors, which produce a voltage change proportional to the field change. By using Galfenol in an array, this research attempts to create a sensory area. Galfenol is an alloy made of Iron and Gallium. FexGax, where 15 less than or equal to x less than or equal to 28, creates a material with useful mechanical and transduction attributes (Clark et al and Kell). Galfenol is also distinguished by the crystalline structure of the material. Two types currently exist: single crystal and polycrystalline. Single crystal has higher transduction coefficients than polycrystalline, but is more costly. Polycrystalline Galfenol is currently available as either production or research grade. The designations are related to the sample growth rate with the slower rate being the research grade. The slower growth rate more closely resembles the single crystal Galfenol properties. Galfenol 17.5- 18% research grade is used for this experiment, provided by Etrema Products Inc. The magnetic circuit and sensor array is first built at the macro scale so that the design can be verified. After the macro scale is proven, further development will move the system to the nano-level. Recent advances in nanofabrication have enabled Galfenol to be grown as nanowires. Using the nanowires, research will seek to create high resolution tactile sensors with spatial resolutions similar to human finger tips, but with greater force ranges and sensitivity capabilities (Flatau & Stadler). Possible uses of such systems include robotics and prosthetics.

Hale, Kathleen↗
NASA NTRS2009

The Development of Directional Decohesion Finite Elements for Multiscale Failure Analysis of Metallic Polycrystals

Atomistic simulations of intergranular fracture have indicated that grain-scale crack growth in polycrystalline metals can be direction dependent. At these material length scales, the atomic environment greatly influences the nature of intergranular crack propagation, through either brittle or ductile mechanisms, that are a function of adjacent grain orientation and direction of crack propagation. Methods have been developed to obtain cohesive zone models (CZM) directly from molecular dynamics simulations. These CZMs may be incorporated into decohesion finite element formulations to simulate fracture at larger length scales. A new directional decohesion element is presented that calculates the direction of Mode I opening and incorporates a material criterion for dislocation emission based on the local crystallographic environment to automatically select the CZM that best represents crack growth. The simulation of fracture in 2-D and 3-D aluminum polycrystals is used to illustrate the effect of parameterized CZMs and the effectiveness of directional decohesion finite elements.

Saether, Erik↗
NASA NTRS1983

Measuring Diffusion and Recombination in Polycrystalline Silicon

Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.

Zook, J. D.↗
NASA NTRS1972

Thermal conductivity of earth materials at high temperatures.

The total thermal conductivity (lattice plus radiative) of several important earth materials is measured in the temperature range from 500 to 1900 K. A new technique is used in which a CO2 laser generates a low-frequency temperature wave at one face of a small disk-shaped sample, and an infrared detector views the opposite face to detect the phase of the emerging radiation. Phase data at several frequencies yield the simultaneous determination of the thermal diffusivity and the mean extinction coefficient of the material. The lattice, radiative, and total thermal conductivities are then calculated. Results for single-crystal and polycrystalline forsterite-rich olivines and an enstatite indicate that, even in relatively pure large-grained material, the radiative conductivity does not increase rapidly with temperature. The predicted maximum total thermal conductivity at a depth of 400 km in an olivine mantle is 0.020 cal/cm/sec/deg C, which is less than twice the surface value.

Schatz, J. F.↗
NASA NTRS1977

Space-based solar power conversion and delivery systems study. Volume 4: Energy conversion systems studies

Solar cells and optical configurations for the SSPS were examined. In this task, three specific solar cell materials were examined: single crystal silicon, single crystal gallium arsenide, and polycrystalline cadmium sulfide. The comparison of the three different cells on the basis of a subsystem parametric cost per kW of SSPS-generated power at the terrestrial utility interface showed that gallium arsenide was the most promising solar cell material at high concentration ratios. The most promising solar cell material with no concentration, was dependent upon the particular combination of parameters representing cost, mass and performance that were chosen to represent each cell in this deterministic comparative analysis. The potential for mass production, based on the projections of the present state-of-the-art would tend to favor cadmium sulfide in lieu of single crystal silicon or gallium arsenide solar cells.

Source record↗
NASA NTRS1994

Physical and mechanical metallurgy of NiAl

Considerable research has been performed on NiAl over the last decade, with an exponential increase in effort occurring over the last few years. This is due to interest in this material for electronic, catalytic, coating and especially high-temperature structural applications. This report uses this wealth of new information to develop a complete description of the properties and processing of NiAl and NiAl-based materials. Emphasis is placed on the controlling fracture and deformation mechanisms of single and polycrystalline NiAl and its alloys over the entire range of temperatures for which data are available. Creep, fatigue, and environmental resistance of this material are discussed. In addition, issues surrounding alloy design, development of NiAl-based composites, and materials processing are addressed.

Noebe, Ronald D.↗
NASA NTRS1987

Structure-property relationships in directionally solidified single crystal NiAl

The ordered intermetallic alloy NiAl is being considered as a potential high temperature structural material, but lack of ductility at ambient temperatures, especially in polycrystalline form, is presently a major obstacle in achieving this goal. Even general agreement of the intrinsic ductility that can be achieved in monocrystals is in dispute. In order to understand this problem, two directionally solidified ingots of NiAl which displayed known differences in ductility were characterized in sufficient detail to identify the corresponding microstructural differences. It was found that the type and size of casting defects, i.e., porosity, present in the material were the major factors in controlling ductility of NiAl single crystals and could explain the order of magnitude variance in fracture strains reported in the literature.

Noebe, R. D.↗
NASA NTRS1984

Polycrystalline Silicon Sheets for Solar Cells by the Improved Spinning Method

Cost reduction of silicon materials in the photovoltaic program of materials was examined. The current process of producing silicon sheets is based entirely on the conventional Czochralski ingot growth and wafering used in the semiconductor industry. The current technology cannot meet the cost reduction demands for producing low cost silicon sheets. Alternative sheet production processes such as unconventional crystallization are needed. The production of polycrystalline silicon sheets by unconventional ingot technology is the casting technique. Though large grain sheets were obtained by this technique, silicon ribbon growth overcomes deficiencies of the casting process by obtaining the sheet directly from the melt. The need to solve difficulties of growth stability and impurity effects are examined. The direct formation process of polycrystalline silicon sheets with large grain size, smooth surface, and sharp edges from the melt with a high growth rate which will yield low cost silicon sheets for solar cells and the photovoltaic characteristics associated with this type of sheet to include an EBIC study of the grain boundaries are described.

Maeda, Y.↗
NASA NTRS1980

Silicon Solar Cell Fabrication Technology

Device fabrication and photoconductive lifetime decay measurements were used to characterize single and polycrystalline silicon substracts. The device characterization of the processed materials was done by spectral response measurements and absolute quantum efficiency at a single wavelength. The results were then reduced to yield the diffusion length of the various samples. The photoconductive lifetime decay method was implemented in order to determine the minority carrier lifetime in unprocessed wafers.

Stafsudd, O. M.↗
NASA NTRS1989

Chemical vapor deposition for silicon cladding on advanced ceramics

Polycrystalline Si was used to clad several advanced ceramic materials such as SiC, Si3N4, sapphire Al2O3, pyrolytic BN, and Si by a CVD process. The thickness of Si cladding ranged from 0.025 to 3.0 mm. CVD Si adhered quite well to all the above materials except Al3O, where the Si cladding was highly stressed and cracked or delaminated. A detailed material characterization of Si-clad SiC samples showed that Si adherence to SiC does not depend much on the substrate surface preparation; that the thermal cycling and polishing of the samples do not cause delamination; and that, in four-point bend tests, the Si-SiC bond remains intact, with the failure occurring in the Si.

Goela, Jitendra S.↗
NASA NTRS1978

Hot forming of silicon sheet, silicon sheet growth development for the large area silicon sheet task of the low cost silicon solar array project

The hot workability of polycrystalline silicon was studied. Uniaxail stress-strain curves are given for strain rates in the range of .0001 to .1/sec and temperatures from 1100 to 1380 C. At the highest strain rates at 1380 C axial strains in excess of 20% were easily obtainable without cracking. After deformations of 36%, recrystallization was completed within 0.1 hr at 1380 C. When the recrystallization was complete, there was still a small volume fraction of unrecyrstallized material which appeared very stable and may degrade the electronic properties of the bulk materials. Texture measurements showed that the as-produced vapor deposited polycrystalline rods have a 110 fiber texture with the 110 direction parallel to the growth direction and no preferred orientation about this axis. Upon axial compression perpendicular to the growth direction, the former 110 fiber axis changed to 111 and the compression axis became 110 . Recrystallization changed the texture to 110 along the former fiber axis and to 100 along the compression axis.

Graham, C. D., Jr.↗
NASA NTRS1978

Polycrystalline or amorphous semiconductor photovoltaic device having improved collection efficiency

A body of semiconductor material having a first surface and a second surface spaced from the first surface includes a first layer along the first surface, a second layer along the second surface, a third layer between and contiguous to the first and second layers. The third layer is of a conductivity type opposite that of the first and second layers so as to form first and second P-N junctions respectively therebetween. The thickness of the third layer is at least twice the minority carrier diffusion length of the semiconductor material, so that carriers generated within the third layer have a high probability of being collected by one of the P-N junctions. The body includes means for electrically connecting the first and second P-N junctions and means for transferring the carriers collected at the first P-N junction to a portion of the first surface.

Kressel, Henry↗