NASA NTRS · 19830000039
Measuring Diffusion and Recombination in Polycrystalline Silicon
Abstract
Light-beam-induced currents yield information about solar cell material. Apparatus measures short-circuit current generated when spot of concentrated light is scanned across grains and grain boundaries in material under test. Technique used to evaluate SOC samples for diffusion and recombination effects of cell processing and chemical and structural defects.
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Zook, J. D.. 1983-08-01. Measuring Diffusion and Recombination in Polycrystalline Silicon. https://ntrs.nasa.gov/citations/19830000039
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