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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1977

Variable temperature pressure cell for polycrystalline X-ray studies down to 2 K - Application to Bi

A variable pressure diamond anvil cell is described for operation at temperatures continuously variable from 300 down to 2 K and controllable within 10 mK. Polycrystalline X-ray data are collected from the pressure cavity by means of either (1) standard photographic techniques, (2) diffractometer measurements, or (3) energy dispersive diffractometry. The facility has been used to examine parts of the phase diagram of Bi. Results from this study indicate that the Bi-I and Bi-III structures are retained to low temperatures; however, there is no evidence to support a structural transition from Bi-V to Bi-VIII.

Skelton, E. F.↗
NASA NTRS1977

Friction and wear of single-crystal and polycrystalline maganese-zinc ferrite in contact with various metals

Sliding friction experiments were conducted with single-crystal (SCF) and hot-pressed polycrystalline (HPF) manganese-zinc ferrite in contact with various metals. Results indicate that the coefficients of friction for SCF and HPF are related to the relative chemical activity of those metals in high vacuum. The more active the metal, the higher the coefficient of friction. The coefficients of friction for both SCF and HPF were the same and much higher in vacuum than in argon at atmospheric pressure. All the metals tested transferred to the surface of both SCF and HPF in sliding. Both SCF and HPF exhibited cracking and fracture with sliding. Cracking in SCF is dependent on crystallographic characteristics. In HPF, cracking depends on the orientation of the individual crystallites.

Miyoshi, K.↗
NASA NTRS1977

Flight IV technical report for experiment 74-37 contained polycrystalline solidification in low-G

Experiments were performed to study the effect of a low-gravity environment on the columnar-to-equiaxed transition (CET) during polycrystalline solidification. Solutions of H2O-30 wt% NH4Cl and H2O-37 wt% NH4Cl were solidified in semicylindrical molds with radial heat extraction. Both solutions were quenched from the same soak temperature (90 C); the respective superheat temperatures were, therefore, approximately 57 and 23 C. The lower superheat resulted in a completely columnar structure, and the higher superheat resulted in a 1/3 columnar - 2/3 equiaxed microstructure; these results were independent of the relationship between heat flow direction and gravity. Grain multiplication mechanisms observed were showering, thermal inversion driven convection cells, and compositionally induced density inversion driven convection cells.

Papazian, J. M.↗
NASA NTRS1978

A Schottky-barrier solar cell on sliced polycrystalline GaAs

Antireflecting-metal-oxide-semiconductor (AMOS) technology has been applied to sliced wafers of polycrystalline GaAs having grain sizes of about 100 microns. Simulated AM1 sunlight efficiencies up to 14% were obtained, and studies using the scanning electron microscope showed that grain boundaries have a minimal effect on short-circuit current density. However, current-voltage characteristics show some influence on open-circuit voltage.

Yeh, Y. C. M.↗
NASA NTRS1978

Beta-to-alpha transformation in polycrystalline SiC. II - Interfacial energetics

A phenomenological analysis of the energetics of the beta-to-alpha transformation in polycrystalline SiC is presented. It is found that the extreme anisotropy of the interfacial energy between alpha- and beta-SiC can account for the rapid growth of composite grains into the beta matrix during conventional sintering or hot-pressing processes. The composite grains consist of alpha-SiC plates 'sandwiched' between well-oriented and recrystallized beta-SiC 'envelopes'. The interfaces involving the 111 plane type of beta and (0001) of alpha have much lower energies than random beta/alpha interfaces.

Mitchell, T. E.↗
NASA NTRS1979

An acoustic emission study of plastic deformation in polycrystalline aluminium

Acoustic emission experiments were performed on polycrystalline and single crystal 99.99% aluminum while undergoing tensile deformation. It was found that acoustic emission counts as a function of grain size showed a maximum value at a particular grain size. Furthermore, the slip area associated with this particular grain size corresponded to the threshold level of detectability of single dislocation slip events. The rate of decline in acoustic emission activity as grain size is increased beyond the peak value suggests that grain boundary associated dislocation sources are giving rise to the bulk of the detected acoustic emissions.

Bill, R. C.↗
NASA NTRS1979

Thermal exposure effects on the mechanical properties of a polycrystalline alumina fiber/aluminum matrix composite

The effects of thermal exposures and elevated test temperature on the mechanical properties of a unidirectional polycrystalline alumina fiber reinforced aluminum matrix composite were investigated. Test temperatures up to 590 K and 2500 hours exposures at 590 K did not significantly affect fiber dominated properties but did severely degrade matrix dominated properties. Fiber strength, degraded by the fabrication process, was restored by post fabrication thermal exposures. Possible degradation mechanisms are discussed.

Olsen, G. C.↗
NASA NTRS1979

Experimental shock metamorphism of mono- and polycrystalline olivine - A comparative study

The paper reports on a series of controlled shock recovery experiments which have been performed on over 40 samples including monocrystalline, polycrystalline, dunite, and porous particulate olivine-bearing targets. Results of the mineralogical and petrological analyses of these samples are used to establish a general and comparative diagnosis of shock effects generated in various olivine-bearing materials. Finally, some experiments are conducted under different ambient pO2 conditions so that information on the distribution of observed impact features is derived as a function not only of peak pressure and texture of the target sample, but also of specific environmental conditions.

Bauer, J. F.↗
NASA NTRS1980

Effects of grain boundaries in polycrystalline solar cells

In polycrystalline solar cells, the short-circuit current is reduced (compared to single-crystal cells) due to recombination of minority carriers at the grain boundaries. The magnitude of this reduction is calculated for the case of a monochromatic beam of light, assuming that both the light beam and the grain boundaries are perpendicular to a p-n junction. The photoresponse of the junction is calculated in terms of the absorption coefficient of the light, the minority-carrier diffusion length, the surface recombination velocity at the grain boundary and the distance of the light beam from the grain boundary. The analysis gives an expression for an effective grain boundary width which depends on wavelength. This width determines the reduction in short-circuit current of solar cells made from material with columnar-type grains.

Zook, J. D.↗
NASA NTRS1980

Low-cost conversion of polycrystalline silicon into sheet by HEM and FAST

The conversion of polycrystalline silicon to sheet form (the wafers produced are 10 cm x 10 cm cross section with minimum surface damage) by the Heat Exchanger Method (HEM) and multi-wire Fixed Abrasive Slicing Technique (FAST), as a means of reducing the cost of solar arrays for adaptation of photovoltaic technology for terrestrial applications, is given. A schematic of a HEM furnace, which includes a silica crucible, and developments in the HEM process are presented. A new machine for slicing with wire was designed and fabricated. The high-speed slicer has been used to slice 19 wafers per cm from 10 cm diameter crystals. Both HEM and FAST are low-cost processes and they have the potential of giving one of the lowest add-on costs ($6.24 and $6.48 per square meter of sheet respectively, with the combination add-on cost of $14.87 per square meter) of this conversion.

Khattak, C. P.↗
NASA NTRS1982

Dynamical electrophotoconductivity in polycrystalline thin films

Polycrystalline cadmium sulfide (CdS) films were deposited on lithium niobate (LiNbO3) substrates by vacuum evaporation and annealed to obtain high photosensitivity. The change in photoconductivity of these films due to the penetration of electric fields associated with elastic waves propagating on their substrates was demonstrated and studied. The relationship between the acoustic electric field and the induced change in film conductivity was found to be a nonlinear one. The fractional change in conductivity is strongly dependent on the light intensity and the film temperature, showing a prominent maximum as a function of these quantities. The largest recorded fractional change in conductivity was about 25% at electric fields of the order of 1,000 volts per centimeter. A phenomological model was developed based on the interaction between the space charge created by the electric field and the electron trapping states in the photoconductor.

Kowel, S. T.↗
NASA NTRS1982

Process Research On Polycrystalline Silicon Material (PROPSM)

The mechanisms limiting performance in polycrystalline silicon was determined. The initial set of experiments in this task entails the fabrication of cells of various thicknesses for four different bulk resistivities between 0.1 and 10 omega-cm. The results for the first two lots are presented.

Wohlgemuth, J. H.↗
NASA NTRS1983

Polycrystalline silicon material availability and market pricing outlook study for 1980 to 88: January 1983 update

Photovoltaic solar cell arrays which convert solar energy into electrical energy can become a cost effective, alternative energy source provided that an adequate supply of low priced materials and automated fabrication techniques are available. Presently, silicon is the most promising cell material for achieving the near term cost goals of the Photovoltaics Program. Electronic grade silicon is produced primarily for the semiconductor industry with the photovoltaic industry using, in most cases, the production rejects of slightly lower grade material. Therefore, the future availability of adequate supplies of low cost silicon is one of the major concerns of the Photovoltaic Program. The supply outlook for silicon with emphasis on pricing is updated and is based primarily on an industry survey conducted by a JPL consultant. This survey included interviews with polycrystalline silicon manufacturers, a large cross section of silicon users and silicon solar cell manufacturers.

Costogue, E.↗
NASA NTRS1984

Preliminary study of thermomechanical fatigue of polycrystalline MAR-M 200

Thermomechanical fatigue (TMF) experiments were conducted on polycrystalline MAR-M 200 over a cyclic temperature range of 500 to 1000 C. Inelastic strain ranges of 0.03 to 0.2 percent were imposed on the specimens. The TMF lives were found to be significantly shorter than isothermal low-cycle-fatigue (LCF) life at the maximum cycle temperature, and in-phase cycling was more damaging than out-of-phase cycling. Extensive crack tip oxidation appeared to play a role in promoting the severity of in-phase cycling. Carbide particle - matrix interface cracking was also observed after in-phase TMF cycling. The applicability of various life prediction models to the TMF results obtained was assessed. It was concluded that current life prediction models based on isothermal data as input must be modified to be applicable to the TMF results.

Bill, R. C.↗
NASA NTRS1984

Process Research of Polycrystalline Silicon Material (PROPSM)

An investigation was begun into the usefulness of molecular hydrogen annealing on polycrystalline solar cells. No improvement was realized even after twenty hours of hydrogenation. Thus, samples were chosen on the basis of: (1) low open circuit voltage; (2) low shunt conductance; and (3) high light generated current. These cells were hydrogenated in molecular hydrogen at 300 C. The differences between the before and after hydrogenation values are so slight as to be negligible. These cells have light generated current densities that indicate long minority carrier diffusion lengths. The open circuit voltage appears to be degraded, and quasi-neutral recombination current enhanced. Therefore, molecular hydrogen is not usful for passivating electrically active defects.

Culik, J. S.↗
NASA NTRS1983

Experimental deformation of polycrystalline H2O ice at high pressure and low temperature - Preliminary results

A preliminary study is carried out of involving 70 constant strain deformation tests on pure polycrystalline H2O ice under conditions covering most of the stability field of ice I sub h. Brittle failure of I sub h is found to be promoted by lower P, lower T, and higher strain rates. Ductile flow is found to be promoted by higher P, higher T, and lower strain rates. The brittle failure of ice I sub h is found to be most unusual. The fracture strength is a positive function of P only below 50 MPa. At pressures greater than this, the fracture strength is independent of P, and the fracture plane lies approximately 45 deg from the load axis. It is believed that existing extrapolation based on existing experimental data to Ganymede and Callisto may be badly in error.

Durham, W. B.↗
NASA NTRS1984

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Von Roos, O.↗