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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Monolithic Integration of Lateral HV Power MOSFET with LV CMOS for SiC Power IC Technology

This paper reports the design and process flow for monolithic integration of lateral high voltage (HV) power MOSFET with low voltage (LV) CMOS circuits for SiC Power IC technology. The reported devices and circuits are fabricated on a N-/N+ 4H-SiC substrate at 150mm, production grade- Analog Devices Inc. (ADI) Hillview fabrication facility located in San Jose. Here, the static performance characteristics of HV NMOS and LV CMOS are reported. For future high temperature applications, the static performances are fully characterized and are reported up to 200oC. Finally, to validate the fabricated CMOS, a 5-stage ring oscillator is also demonstrated.

4H-SiC↗
DOE OSTI2022

An Inrush Current Limiting Method for Grid-Connected Converters Considering Grid Voltage Disturbances

To support the electric power grid, some grid-connected converters are required to ride through abnormal grid conditions, including voltage disturbances. However, at the moment, when a grid voltage disturbance happens, a large inrush current could be induced due to the large difference between the grid and converter output pulsewidth modulation (PWM) voltages. This inrush current could be more severe in the faster switching SiC-based multilevel converter, which only needs a small filter inductance to meet its normal operation requirements, such as harmonics and peak ripple currents. In this article, a PWM mask method is used to limit the inrush current. With this method, the inrush current can be effectively limited to a preset value and can help the converter ride through grid voltage disturbances. Furthermore, the method is validated through experiments conducted on a single-phase SiC-based five-level converter considering low voltage, high voltage, and phase angle disturbances.

42 ENGINEERING↗
DOE OSTI2021

Dielectric screening in perovskite photovoltaics

Abstract The performance of perovskite photovoltaics is fundamentally impeded by the presence of undesirable defects that contribute to non-radiative losses within the devices. Although mitigating these losses has been extensively reported by numerous passivation strategies, a detailed understanding of loss origins within the devices remains elusive. Here, we demonstrate that the defect capturing probability estimated by the capture cross-section is decreased by varying the dielectric response, producing the dielectric screening effect in the perovskite. The resulting perovskites also show reduced surface recombination and a weaker electron-phonon coupling. All of these boost the power conversion efficiency to 22.3% for an inverted perovskite photovoltaic device with a high open-circuit voltage of 1.25 V and a low voltage deficit of 0.37 V (a bandgap ~1.62 eV). Our results provide not only an in-depth understanding of the carrier capture processes in perovskites, but also a promising pathway for realizing highly efficient devices via dielectric regulation.

14 SOLAR ENERGY↗
DOE OSTI2021

Thin-film chemical expansion of ceria based solid solutions: laser vibrometry study

The chemical expansion of Pr 0.1 Ce 0.9 O 2-δ (PCO) and CeO 2-δ thin films is investigated in the temperature range between 600 °C and 800 °C by laser Doppler vibrometry (LDV). It enables non-contact determination of nanometer scale changes in film thickness at high temperatures. The present study is the first systematic and detailed investigation of chemical expansion of doped and undoped ceria thin films at temperatures above 650 °C. The thin films were deposited on yttria stabilized zirconia substrates (YSZ), operated as an electrochemical oxygen pump, to periodically adjust the oxygen activity in the films, leading to reversible expansion and contraction of the film. This further leads to stresses in the underlying YSZ substrates, accompanied by bending of the overall devices. Film thickness changes and sample bending are found to reach up to 10 and several hundred nanometers, respectively, at excitation frequencies from 0.1 to 10 Hz and applied voltages from 0–0.75 V for PCO and 0–1 V for ceria. At low frequencies, equilibrium conditions are approached. As a consequence maximum thin-film expansion of PCO is expected due to full reduction of the Pr ions. The lower detection limit for displacements is found to be in the subnanometer range. At 800 °C and an excitation frequency of 1 Hz, the LDV shows a remarkable resolution of 0.3 nm which allows, for example, the characterization of materials with small levels of expansion, such as undoped ceria at high oxygen partial pressure. As the correlation between film expansion and sample bending is obtained through this study, a dimensional change of a free body consisting of the same material can be calculated using the high resolution characteristics of this system. A minimum detectable dimensional change of 5 pm is estimated even under challenging high-temperature conditions at 800 °C opening up opportunities to investigate electro-chemo-mechanical phenomena heretofore impossible to investigate. The expansion data are correlated with previous results on the oxygen nonstoichiometry of PCO thin films, and a defect model for bulk ceria solid solutions is adopted to calculate the cation and anion radii changes in the constrained films during chemical expansion. The constrained films exhibit anisotropic volume expansion with displacements perpendicular to the substrate plane nearly double that of bulk samples. The PCO films used here generate high total displacements of several 100 nm’s with high reproducibility. Consequently, PCO films are identified to be a potential core component of high-temperature actuators. They benefit not only from high displacements at temperatures where most piezoelectric materials no longer operate while exhibiting, low voltage operation and low energy consumption.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

A Stable and Ultrafast Control for Multiparallel Grid-Tied SiC Inverters With LVRT Capability Considering Cable Impedance

The stability of multiparalleled grid-tied inverters remains a challenging issue especially during low-voltage ride-through (LVRT) in the presence of grid impedance. SiC device-based grid-tied inverters can achieve advantages such as higher efficiency, reduced size of interface filters, and fast dynamics; however, they can exacerbate this stability issue particularly when LVRT occurs along with high inrush current due to their low inertia characteristics. In this article, a direct deadbeat control method without any PI control loop is proposed for multiparallel grid-tied SiC inverters. The proposed control achieves instantaneous current regulations within switching cycles. In addition, it mitigates high inrush currents and maintains stability during LVRT transients without requiring mode transitions between normal and LVRT operation modes, thereby achieving an ultrafast response and seamless operation through this unified control method. The Lyapunov method is applied to analyze the multiparallel inverter stability in the presence of grid impedance with proposed deadbeat control method. The inverter V-I trajectories during LVRT transients are derived to illustrate the ultrafast and stable feature of proposed control. Finally, the experimental results of two grid-tied SiC inverters operating at LVRT transients are provided to verify the advantages of the proposed control method.

14 SOLAR ENERGY↗
DOE OSTI2020

Direct metal contacts printing on 4H-SiC for alpha detectors and inhomogeneous Schottky barriers

Electrical characterization of several 4H-SiC Schottky diodes with Aerosol-Jet printed gold (Au), silver (Ag), and platinum (Pt) contacts was performed using forward and reverse current–voltage (IV) measurements. From these measurements, device parameters such as Schottky barrier height and ideality factor were determined; however, many of the devices exhibited nonideal behavior and inferior performance characterized by ideality factors significantly greater than one, disproportionate low voltage leakage current and low barrier heights. Forward current–voltage (FIV) characteristics were fitted to an inhomogeneous barrier height theory to explain the abnormal behavior exhibited by the printed devices. Here, transmission electron microscopy (TEM) of the device cross-sections was performed to investigate the printed metal and semiconductor epitaxial layer interface, which revealed the imperfections in the metal–semiconductor contact. Despite these irregularities, alpha radiation detection capability of these devices was still achieved with an energy resolution of 1.89% at 5.486 MeV, and the best achievable resolution at 0.51% with no energy degradation of 5.486 MeV.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2021

Segmented Energy Routing for a Modular AC/DC Hybrid System

This article presents a modular ac/dc system with both distributed and centralized power ports for energy router (ER) applications. In each module of the described system, photovoltaic (PV) power generation units, battery-type energy storage (ES) units, and critical loads are connected to the cascaded H-bridge (CHB)-organized medium-voltage (MV) dc links, with fully distributed low-voltage (LV) dc power ports. Copies of modules share the centralized load bus and interact with an MV ac grid in parallel. Hybrid power port (HPO) assigns flexibility to the system but makes energy routings a necessity for stable operation. In this article, a segmented energy management strategy for the HPO-ER is proposed. In terms of the grid-side power transferring, the system ratings are intentionally designed to match significant power imbalance. Focally, a segmented energy management strategy is proposed to realize fully autonomous energy routing involving MV ac grid, distributed PV generations, distributed battery storages, and LV load. The system is proven to be stable using the derived impedance-based model considering the interaction between power blocks. The feasibility of the topology and control strategy is also verified through software simulation, laboratorial hardware prototype experiment, and hardware-in-the-loop (HIL) emulation.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Improved Double Pulse Test for Accurate Dynamic Characterization of Medium Voltage SiC Devices

This article presents an improved double pulse test (DPT) for accurate dynamic characterization of the medium voltage (MV) silicon carbide device. The difference between low voltage (LV) and MV DPT setup grounding is first introduced, which results in different measurement considerations. Then, parasitic capacitances in the DPT and their impact on the DPT are discussed considering different grounding points and device connections. Approaches are proposed to minimize the impact of parasitic capacitances on DPT results. In addition, the impact of switching V-I timing alignment on the testing results is discussed, compared to that in the LV DPT; a V-I alignment approach is introduced for the MV DPT. A 10 kV/20 A SiC mosfet -based DPT is taken as an example of the improved DPT, and test results show that it can minimize the impact from parasitic and improve the accuracy of the device switching loss estimation.

42 ENGINEERING↗
DOE OSTI2025

The influence of V-defects, leakage, and random alloy fluctuations on the carrier transport in red InGaN MQW LEDs

Red InGaN-based light-emitting diodes (LEDs) exhibit lower internal quantum efficiencies than violet, blue, and green InGaN LEDs due to a reduction in radiative recombination rates relative to non-radiative recombination rates as the Indium composition increases. Additionally, the larger polarization and band offset barriers between high indium content InGaN quantum wells and GaN quantum barriers increase the forward voltage. In blue and green LEDs, random alloy fluctuations and V-defects play a key role in reducing the forward voltage. When V-defects are present, either naturally or intentionally introduced, they create an alternative path for carrier injection into the MQWs through the V-defect sidewalls. This injection mechanism explains the turn-on voltages of green LEDs. However, in InGaN red LEDs, these two phenomena do not reduce the forward voltage as effectively as in blue and green LEDs, and consequently, the computed forward voltage remains significantly higher than the measured one. Furthermore, currents are observed at low voltages before the turn-on voltage (V<ℏω/e=2.0 V) of red LEDs. To address this, we introduce dislocation-induced tail states in the modeling, suggesting that leakage current through these states may play a significant role both below and at turn-on voltages. The simulation also indicates that leakage carriers below turn-on accumulate, partially diffuse in the QWs, screen the polarization-induced barrier in the low injection regime, and further reduce the forward voltage. Despite these beneficial effects, a drawback of dislocation-induced tail states is the enhanced nonradiative recombination in the dislocation line region. This study provides a detailed analysis of device injection physics in InGaN QW red LEDs and outlines potential optimization strategies.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Spatial Effect on the Performance of Carboxylate Anode Materials in Na-Ion Batteries

Developing low-voltage carboxylate anode materials is critical for achieving low-cost, high-performance, and sustainable Na-ion batteries (NIBs). However, the structure design rationale and structure-performance correlation for organic carboxylates in NIBs remains elusive. Herein, the spatial effect on the performance of carboxylate anode materials is studied by introducing heteroatoms in the conjugation structure and manipulating the positions of carboxylate groups in the aromatic rings. Planar and twisted organic carboxylates are designed and synthesized to gain insight into the impact of geometric structures to the electrochemical performance of carboxylate anodes in NIBs. Among the carboxylates, disodium 2,2’-bipyridine-5,5’-dicarboxylate (2255-Na) with a planar structure outperforms the others in terms of highest specific capacity (210 mAh g -1 ), longest cycle life (2000 cycles), and best rate capability (up to 5 A g -1 ). Further, the cyclic stability and redox mechanism of 2255-Na in NIBs are exploited by various characterization techniques. Moreover, high-temperature (up to 100 °C) and all-organic batteries based on a 2255-Na anode, a polyaniline (PANI) cathode, and an ether-based electrolyte are achieved and exhibited exceptional electrochemical performance. Therefore, this work demonstrates that designing organic carboxylates with extended planar conjugation structures is an effective strategy to achieve high-performance and sustainable NIBs.

25 ENERGY STORAGE↗
DOE OSTI2023

Fairness-Aware Distributed Energy Coordination for Voltage Regulation in Power Distribution Systems

The accelerating deployment of solar photovoltaics into low-voltage distribution networks can cause reverse power flow and overvoltage problems. However, if coordinated properly, the real and reactive power flexibility of these resources enables distribution operators to manage their networks more efficiently. Existing literature is rich in droop-based control (Volt-Watt and Volt-VAr) and optimization-based distributed energy coordination for four-quadrant control of photovoltaics to prevent overvoltage issues. While optimal coordination can effectively mitigate overvoltage, it tends to treat resources at sensitive parts of the grid unfairly. Here, to address this concern, we propose a distributed optimal power flow formulation that incorporates fairness in curtailing photovoltaic generation and utilizes the reactive power capability of smart inverters. The proposed distributed formulation allows for scalable resource aggregation that can be leveraged to achieve fairness within a certain segment of the grid and/or fairness across the entire network. Fair curtailment of photovoltaic systems is demonstrated with aggregation at each of two layers in a distribution network: 1) area-level fairness and 2) feeder-level fairness. To explore the trade-off between fairness and optimal utilization, the fairness-aware control actions are compared against the performance of a centralized controller that aims to maximize the aggregate PV generation without incorporating fairness. Simulation results show that introducing area-level fairness increased curtailment by 0.0101 percentage points and feeder-level fairness increased curtailment by 0.0458 percentage points compared to a fairness-agnostic control.

Poudel, Shiva↗
DOE OSTI2020

Applying Machine Learning to the Classification of DC-DC Converters. NA-22 Final Report

Tools are now available that enable measurement electromagnetic radiation (EMR) from active electronics in an item. This radiation may be intended WIFI or cellular network links, for example or unintended such as the switching noise generated by DC-to-DC converters. It would be extremely valuable to have the capability to discriminate between the low-voltage DC-to-DC converters or other digital noise prevalent in most modern electronics, versus the high-voltage DC-to-DC converters used in utility firesets. Previous work performed under a Sandia Laboratory Directed Research and Development (LDRD) project on Charge State Detection using a deep neural network has been continued in this effort. A state-of-the-art supervised machine learning algorithm has not only been extended to discriminate between low and high voltage converters but has been validated in determining a converters make and model.

42 ENGINEERING↗
DOE OSTI2021

Adaptive Load Shedding for Grid Emergency Control via Deep Reinforcement Learning

Emergency control, typically such as under-voltage load shedding (UVLS), is broadly used to grapple with low voltage and voltage instability issues in real-world power systems under contingencies. However, existing emergency control schemes are rule-based and cannot be adaptively applied to uncertain and floating operating conditions. Here, we propose an adaptive UVLS algorithm for emergency control via deep reinforcement learning (DRL) and expert systems. We first construct dynamic components for picturing the power system operation as the environment. The transient voltage recovery criteria, which poses time-varying requirements to UVLS, is integrated into the states and reward function to advise the learning of deep neural networks. The proposed method has no tuning issue of coefficients in reward functions, and this issue was regarded as a deficiency in the existing DRL-based algorithms. Case studies illustrate that the proposed method outperforms the traditional UVLS relay in both the timeliness and efficacy for emergency control.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2023

The BiDFET Device and Its Impact on Converters

The matrix converter topology for direct ac-to-ac conversion offers elimination of the bulky and unreliable D.C. link capacitors used in the popular Voltage-Source Inverter (VSI) with a front-end rectifier. The resulting more compact and higher efficiency implementation is a desirable solution for a wide variety of applications, such as photovoltaic energy generation, motor drives, and energy storage systems. The development of matrix converters has been hampered by the lack of availability of commercial bidirectional power switches with the ability to block high voltages in the first and third quadrants, carry on state current in both quadrants with low voltage drop, exhibit large forward-biased safe-operating-area (FBSOA), and low switching power losses. Consequently, many implementations have been tried in the past using discrete devices, as listed in Table I. Two implementations utilize commonly available asymmetric blocking IGBTs, while two cases make use of SiC power MOSFETs. They generally have a large parts count (4-6 individual switches) that occupies significant space in the converter where multiple bi-directional switches are required. They also have a high on-state voltage drop that degrades efficiency. As a result, one implementation utilizes symmetric blocking IGBT to achieve a low parts count (2), but its switching losses are unacceptably high.

42 ENGINEERING↗
DOE OSTI2023

Online Monitoring of Medium Voltage Cable Systems with Spread Spectrum Time Domain and Frequency Domain Reflectometry

In-service failures of wave energy convertor (WEC) cable systems can have a significant cost and power availability impact. Close parallel research 2019 data showed > 1B£ and 9 Terra-Watt-Hours associated with global off-shore wind (OSW) cable failures (Strang-Moran 2020). OSW is a closely related technology but currently is significantly cheaper than WEC technology. For wave energy to compete, the problem of reliable cable transmission must be mitigated. This project develops isolation technology to allow online high frequency reflectometry testing of medium voltage cables (1 to 10 kV and higher) without arcing or damage to the test instrument. Online spread spectrum time domain reflectometry (SSTDR) testing has been established for low voltage cable systems in the aircraft and rail industry and the ability to detect and locate cable flaws of interest is well understood. Extending reflectometry testing to medium voltage systems could enable detection of cable damage before failures occur thereby allowing repair and replacement of damaged cable segments to be scheduled and managed. The seedling project succeeded to pass and receive high frequency SSTDR signals onto a cable up to 1 kV using a parallel trace isolation circuit board that can be connected onto the test cable. The approach used a novel circuit design for which an invention disclosure has been filed. A proposed sapling project would extend the technology toward the higher operating voltages used by WEC systems, thereby enabling online SSTDR cable monitoring. The goal of the seedling project was to extend the capability of the ARENA cable/motor test bed to address medium voltages and to develop a high pass filter isolation architecture to protect the reflectometry instrument from the low frequency (DC – 60 Hz) line voltage while allowing the high frequency diagnostic signal to pass to and from the test instrument to the live line. Initial efforts focused on passive LCR filter circuits to reduce 60 Hz levels below 10 volts from a 10 kV line while allowing the MHz high frequency chirps to pass onto the cables and for mV signals to be detected. We discovered that the parasitic loss behavior of real high voltage components precluded this approach from working. An alternate approach was adapted for the electric field to couple between two parallel traces on a printed circuit board much like a radio-frequency coupler. The challenge here was and is to have the parallel traces close enough to each other to effectively pass the high frequency chirp onto the live line and receive any reflected signal from any encountered impedance change along the cable. This reflected signal will be in the mV range. The traces however must be far enough apart to not allow arcing on the board. A design with 3 mm spacing was determined to allow the high frequency signal to pass onto the live line and receive the mV signal back into the instrument while reducing the 60 Hz voltage amplitude by >80 dB (more than a factor of 10,000) without allowing arcing from across the parallel traces. This was confirmed by simulation and test.

16 TIDAL AND WAVE POWER↗
DOE OSTI2024

Distributed Coordination of Networked Microgrids for Voltage Support in Bulk Power Grids

The increasing deployment of distributed energy resources (DERs) and microgrids (MGs) in power distribution systems has enabled the adjustment of reactive power consumption as seen at the substation, which can be used to provide voltage support for the bulk power system (BPS). Leveraging this new capability will provide greater resiliency to the power system as a whole. Here, the goal of this paper is to develop and compare three different algorithms, namely distributed optimal power flow, distributed consensus algorithm, and fully decentralized collaborative autonomy for unbalanced distribution systems for microgrid coordination. These algorithms use networked MGs to support the BPS voltage when a contingency at the bulk grid results in abnormally low voltages, which may be a precursor to voltage collapse. Our comparative analysis includes both qualitative and quantitative assessments of the three algorithms and a discussion of the trade-offs between the decentralized and distributed methods in normal and disrupted conditions. Each algorithm was evaluated on the modified IEEE 13-bus system and a real power distribution system at Chattanooga, Tennessee, that encompasses more than 4500 buses. Each algorithms excels differently and may be suited for different scenarios depending on the condition, operations, and priorities of the power and communication systems.

24 POWER TRANSMISSION AND DISTRIBUTION↗
DOE OSTI2022

Boron Nitride Solid-State Neutron Detectors

The goal of this project is to build upon the work performed under the Texas Tech IDEAS project (DE-AR0000964 monitored by Dr. Isik Kizilyalli) to bring the developed B-10 enriched hexagonal boron nitride (h- 10 BN or 10 BN or BN) semiconductor neutron detector technology to the next level of maturity. In comparison to He-3 ( 3 He) gas detectors, BN neutron detectors possess all the intrinsic advantages of semiconductor devices: light weight, compact size, fast response speed, high spatial resolution, high temperature and low voltage operation capability, ease of mass production via existing semiconductor infrastructures, low cost of operation and maintenance, flexible form factors, and durability. The project will develop a prototype h- 10 BN neutron detector as a potential replacement for the 3 He gas neutron detectors (LND 25185 or equivalent) used in various neutron survey meters currently produced and commercialized by Ludlum Measurements, Inc. (LMI). To increase the overall detection efficiency, it is essential to maximize the collection efficiency of charge carriers (electrons and holes) generated by the nuclear reaction, which demands a further push to achieve 10 BN epilayers with improved material quality. The material growth processes will be guided by characterization of structural, optical, and electrical properties of h-BN. Selective devices will be calibrated at LMI. During ARPA-E supporting period, the key material parameters of h-BN produced by metal organic chemical vapor deposition (MOCVD), including the layer thickness, mobility-lifetime product, surface recombination field and detector size for maintaining a high charge collection efficiency all have been improved by several orders of magnitude. These improvements have enabled the realization of high-performance h 10BN semiconductor thermal neutron detectors. Presently, h- 10 BN thermal neutron detectors developed under ARPA-E’s support hold the record high detection efficiency among all solid-state detectors at 59%. With further development in manufacturing, there is no question that h-BN detectors will replace the traditional He-3 gas detectors in certain application areas by offering obvious advantages of semiconductor technologies over gas detectors and opportunities for users to dedicate the scarce and expensive supply of He-3 gas to other application areas where substitutes of He-3 gas are not possible.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗