Engineering PapersSearch

DOE OSTI · 3018658

Voltage Level-Shifting Techniques for Ion-Trap Based Quantum Applications

Abstract

This slide describes a set of techniques that generate high-voltage control signals of ion trap from low-voltage domain, at cryogenic temperature. With proposed solutions, a conversion between arbitrary signal ranges is achievable.

Keep this discovery

Explore connections, maps & timelines

BibTeXRIS

Sun, Hongzhi [Fermilab] (ORCID:000900006234371X). 2025-09-19. Voltage Level-Shifting Techniques for Ion-Trap Based Quantum Applications. https://doi.org/10.2172/3018658

Cite the original work for its findings. Save a collection to share your selection of sources.