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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Test report for single event effects of the 80386DX microprocessor

The Jet Propulsion Laboratory Section 514 Single Event Effects (SEE) Testing and Analysis Group has performed a series of SEE tests of certain strategic registers of Intel's 80386DX CHMOS 4 microprocessor. Following a summary of the test techniques and hardware used to gather the data, we present the SEE heavy ion and proton test results. We also describe the registers tested, along with a system impact analysis should these registers experience a single event upset.

Watson, R. Kevin↗
NASA NTRS1992

The RBE-LET relationship for rodent intestinal crypt cell survival, testes weight loss, and multicellular spheroid cell survival after heavy-ion irradiation

This report presents data for survival of mouse intestinal crypt cells, mouse testes weight loss as an indicator of survival of spermatogonial stem cells, and survival of rat 9L spheroid cells after irradiation in the plateau region of unmodified particle beams ranging in mass from 4He to 139La. The LET values range from 1.6 to 953 keV/microns. These studies examine the RBE-LET relationship for two normal tissues and for an in vitro tissue model, multicellular spheroids. When the RBE values are plotted as a function of LET, the resulting curve is characterized by a region in which RBE increases with LET, a peak RBE at an LET value of 100 keV/microns, and a region of decreasing RBE at LETs greater than 100 keV/microns. Inactivation cross sections (sigma) for these three biological systems have been calculated from the exponential terminal slope of the dose-response relationship for each ion. For this determination the dose is expressed as particle fluence and the parameter sigma indicates effect per particle. A plot of sigma versus LET shows that the curve for testes weight loss is shifted to the left, indicating greater radiosensitivity at lower LETs than for crypt cell and spheroid cell survival. The curves for cross section versus LET for all three model systems show similar characteristics with a relatively linear portion below 100 keV/microns and a region of lessened slope in the LET range above 100 keV/microns for testes and spheroids. The data indicate that the effectiveness per particle increases as a function of LET and, to a limited extent, Z, at LET values greater than 100 keV/microns. Previously published results for spread Bragg peaks are also summarized, and they suggest that RBE is dependent on both the LET and the Z of the particle.

Non-NASA Center↗
NASA NTRS2008

Radiation effects assessment of MRAM devices

The Magneto-resistive Random Access Memory (MRAM) from Freescale Semiconductor, MR2A16A, was subjected to heavy ion single event testing. Test results show that this device is sensitive to Single Event Latchup (SEL). The sensitivity of the MRAM was attributed to the complementary metal oxide semiconductor (CMOS) process in which the active portion of this device is constructed. Therefore, the device must be used with caution and may require mitigation techniques if used in a space environment. There was no indication that the MRAM technology itself, the memory element construction, is subject to damage from heavy ions.

McClure, Steve↗
NASA NTRS1989

Trends In Susceptibility To Single-Event Upset

Report provides nearly comprehensive body of data on single-event upsets due to irradiation by heavy ions. Combines new test data and previously published data from governmental and industrial laboratories. Clear trends emerge from data useful in predicting future performances of devices.

Nichols, Donald K.↗
NASA NTRS2020

Micron MT29F1T08CMHBBJ4 1Tb NAND Flash Memory Single Event Effect Characterization Test Report

The purpose of this testing is to characterize the Single-Event Effect (SEE) response of the Micron MT29F1T08CMHBBJ4 3D NAND Flash memory. The MT29F1T08CMHBBJ4 is a 1Tb NAND Flash memory, consisting of a four-die stack of 256Gb MLC dice packaged in a 132-ball VBGA package. All data presented is the result of testing only the top die (256Gb) of the package. Testing was performed at two heavy-ion cyclotron facilities with an identical test setup, over the course of four test trips from 2017-2019.

Single Event Effect (SEE)↗
NASA NTRS2000

A Nuclear Interaction Model for Understanding Results of Single Event Testing with High Energy Protons

An internuclear cascade and evaporation model has been adapted to estimate the LET spectrum generated during testing with 200 MeV protons. The model-generated heavy ion LET spectrum is compared to the heavy ion LET spectrum seen on orbit. This comparison is the basis for predicting single event failure rates from heavy ions using results from a single proton test. Of equal importance, this spectra comparison also establishes an estimate of the risk of encountering a failure mode on orbit that was not detected during proton testing. Verification of the general results of the model is presented based on experiments, individual part test results, and flight data. Acceptance of this model and its estimate of remaining risk opens the hardware verification philosophy to the consideration of radiation testing with high energy protons at the board and box level instead of the more standard method of individual part testing with low energy heavy ions.

Culpepper, William X.↗
NASA NTRS2017

NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing

This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex-UltraScale heavy-ion results, Xilinx UltraScale+ single event effect (SEE) test plans, development of a new methodology for characterizing SEU system response, and NEPP involvement with FPGA security and trust.

Field Programmable Gate Array (FPGA); Triple Modul↗
NASA NTRS1973

Experimental program to determine long term characteristics of the MDE pressure transducers

The pressure cell sensors developed for the Pioneer 10/G meteoroid detection experiments (MDE) were investigated to enhance their application and their potential as a sensor in other MDE applications. Their Paschen characteristics were also investigated, and the effects of variations in geometry, Ni-63 platings (for initial ionizations) and sealing pressures were determined. The effects of extensive pre-flight testing and proton and heavy ion space radiation were investigated. Flight-quality pressure panels/cells were committed to long term testing to demonstrate their suitability for the Pioneer 10/G Missions.

Parker, C. D.↗
NASA NTRS1996

The Single Event Effect Characteristics of the 486-DX4 Microprocessor

This research describes the development of an experimental radiation testing environment to investigate the single event effect (SEE) susceptibility of the 486-DX4 microprocessor. SEE effects are caused by radiation particles that disrupt the logic state of an operating semiconductor, and include single event upsets (SEU) and single event latchup (SEL). The relevance of this work can be applied directly to digital devices that are used in spaceflight computer systems. The 486-DX4 is a powerful commercial microprocessor that is currently under consideration for use in several spaceflight systems. As part of its selection process, it must be rigorously tested to determine its overall reliability in the space environment, including its radiation susceptibility. The goal of this research is to experimentally test and characterize the single event effects of the 486-DX4 microprocessor using a cyclotron facility as the fault-injection source. The test philosophy is to focus on the "operational susceptibility," by executing real software and monitoring for errors while the device is under irradiation. This research encompasses both experimental and analytical techniques, and yields a characterization of the 486-DX4's behavior for different operating modes. Additionally, the test methodology can accommodate a wide range of digital devices, such as microprocessors, microcontrollers, ASICS, and memory modules, for future testing. The goals were achieved by testing with three heavy-ion species to provide different linear energy transfer rates, and a total of six microprocessor parts were tested from two different vendors. A consistent set of error modes were identified that indicate the manner in which the errors were detected in the processor. The upset cross-section curves were calculated for each error mode, and the SEU threshold and saturation levels were identified for each processor. Results show a distinct difference in the upset rate for different configurations of the on-chip cache, as well as proving that one vendor is superior to the other in terms of latchup susceptibility. Results from this testing were also used to provide a mean-time-between-failure estimate of the 486-DX4 operating in the radiation environment for the International Space Station.

Kouba, Coy↗
NASA NTRS2003

Accelerator Tests of the KLEM Prototypes

The Kinematic Lightweight Energy Meter (KLEM) device is planned for direct measurement of the elemental energy spectra of high-energy (10(exp 11)-10(exp 16) eV) cosmic rays. The first KLEM prototype has been tested at CERN with 180 GeV pion beam in 2001. A modified KLEM prototype will be tested in proton and heavy ion beams to give more experimental data on energy resolution and charge resolution with KLEM method. The first test results are presented and compared with simulations.

Bashindzhagyan, G.↗
NASA NTRS1986

Genetic effects on heavy ions in drosophila

Drosophila sex-linked recessive lethal mutation test was used to study the dose response relation and relative biological effectiveness of heavy ions. The experiments were performed using the heavy ion beams at BEVALAC of Lawrence Berkeley Laboratory. These experiments were undertaken according to the proposed milestones and included Ne-20, A-40 and Fe-65 ions with respective energies of 600 MeV, 840 MeV and 850 MeV. At these energies several doses of these radiations ranging from 20 to 1280 R were used. Space radiation exposure to astronauts is supposed to be quite low and therefore very low dose experiments i.e., 20 R, were also performed for the three ions. The mutation response was measured in all germ cell types i.e., spermatozoa, spermatids, spermatocytes and spermatogonia of treated Drosophila males. A linear dose frequency relation was observed for most of the range except at high doses where the saturation effect was observed. Also, a very significant difference was observed among the sensitivity of the four germ cell stages where spermatozoa and spermatids were more sensitive. At the higher doses of this range, most of the spermatogonia and spermatocytes were killed. Although comparative and identical experiments with X-rays or neutrons have not been performed, the compassion of our data with the ones available in literature suggest that the heavy ions have a high rbe and that they are several times more effective than low LET X-rays. The rbe compared to neutrons however appears to be only slightly higher.

Kale, P. G.↗
NASA NTRS2010

Nonvolatile Memory Technology for Space Applications

This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM.

Oldham, Timothy R.↗
NASA NTRS2024

Single Event Effects Test Report IXYS IXTA96P085T P-Channel -85V MOSFET

This study was undertaken to determine the destructive single event effect and degradation susceptibility of the IXTA96P085T P-Channel -85V MOSFET from IXYS. The device was monitored for destructive single event effects and degradation during exposure to a heavy ion beam at the Berkeley Accelerator Space Effects (BASE) Facility at the Lawrence Berkeley National Laboratory (LBNL). Gate and drain currents were measured during irradiation and a basic set of electrical characterizations was performed following each fluence exposure to assess heavy ion induced damage. The test date was April 10, 2024. This characterization is application specific.

MOSFET↗
NASA NTRS2020

Status of NEPP Radiation Testing 3D NAND Flash

This work provides a current update of radiation testing activities on 3D NAND flash memories in support of the NEPP program. Single-event effects data from heavy-ion and low-energy proton testing is highlighted on a state of the art memory device.

Flash↗