Titanium oxide thin films
Titanium oxide thin film capacitor with large temperature dependence for detecting infrared radiation
THIN FILM↗
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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Applications of Thin Film Thermocouples for Surface Temperature Measurement
Thin film thermocouples provide a minimally intrusive means of measuring surface temperature in hostile, high temperature environments. Unlike wire thermocouples, thin films do not necessitate any machining of the surface, therefore leaving intact its structural integrity. Thin films are many orders of magnitude thinner than wire, resulting in less disruption to the gas flow and thermal patterns that exist in the operating environment. Thin film thermocouples have been developed for surface temperature measurement on a variety of engine materials. The sensors are fabricated in the NASA Lewis Research Center's Thin Film Sensor Lab, which is a class 1000 clean room. The thermocouples are platinum-13 percent rhodium versus platinum and are fabricated by the sputtering process. Thin film-to-leadwire connections are made using the parallel-gap welding process. Thermocouples have been developed for use on superalloys, ceramics and ceramic composites, and intermetallics. Some applications of thin film thermocouples are: temperature measurement of space shuttle main engine turbine blade materials, temperature measurement in gas turbine engine testing of advanced materials, and temperature and heat flux measurements in a diesel engine. Fabrication of thin film thermocouples is described. Sensor durability, drift rate, and maximum temperature capabilities are addressed.
Martin, Lisa C.↗
Colossal Cryogenic Electro‐Optic Response Through Metastability in Strained BaTiO 3 Thin Films
The search for thin film electro-optic materials that can retain superior performance under cryogenic conditions has become critical for quantum computing. Barium titanate thin films show large linear electro-optic coefficients in the tetragonal phase at room temperature, which is severely degraded down to ≈200 pm V −1 in the rhombohedral phase at cryogenic temperatures. There is immense interest in manipulating these phase transformations and retaining superior electro-optic properties down to liquid helium temperature. Utilizing the thermodynamic theory of optical properties, a large low-temperature electro-optic response is designed by engineering the energetic competition between different ferroelectric phases, leading to a low-symmetry monoclinic phase with a massive electro-optic response. The existence of this phase is demonstrated in a strain-tuned BaTiO 3 thin film that exhibits a linear electro-optic coefficient of 2516 ± 100 pm V −1 at 5 K, which is an order of magnitude higher than the best reported performance thus far. Importantly, the electro-optic coefficient increases by 100 × during cooling, unlike the conventional films, where it degrades. Further, at the lowest temperature, significant higher order electro-optic responses also emerge. These results represent a new framework for designing materials with property enhancements by stabilizing highly tunable metastable phases with strain.
barium titanate↗
Feasibility study of thin film tunnel cathodes
Thin film tunnel cathodes evaluated for use in ultrahigh vacuum gauges
ULTRAHIGH VACUUM↗
Thin-film technology development
Thin film interconnect patterns developed for three hybrid satellite resistor, diode, and transistor circuit applications
THIN FILM↗
Characterizing Non-Uniformity of Performance of Thin-Film Solar Cells
Thin-film Solar Cells are being actively studied for terrestrial and space applications because of their potential to provide low-cost, lightweight, and flexible electric power system. Currently, thin-film solar cell performance is limited partially by the nonuniformity of performance that they typically exhibit. This nonuniformity of performance necessitates more detailed characterization techniques than the well-known macroscopic measurements such as current-voltage and efficiency. This project seeks to explore methods of characterization that take into account the spatial nonuniformity of thin-film solar cells. In this presentation we show results of electroluminescence images, short-circuit maps, and Kelvin Probe maps. All these mapping characterization and analysis tools show that the non-uniformities can correlated with device performance and efficiency.
Clark, Eric B.↗
The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces
Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.
superconducting films↗
The Impact of Standard Semiconductor Fabrication Processes on Polycrystalline Nb Thin Film Surfaces
Polycrystalline Nb thin films are extensively used for microwave kinetic inductance detectors (MKIDs) and superconducting transmission line applications. The microwave and mm-wave loss in these films is impacted, in part, by the presence of surface nitrides and oxides. In this study, glancing incidence x-ray diffraction was used to identify the presence of niobium nitride and niobium monoxide surface layers on Nb thin films which had been exposed to chemicals used in standard photolithographic processing. A method of mitigating the presence of ordered niobium monoxide surface layers is presented. Furthermore, we discuss the possibility of using glancing incidence x-ray diffraction as a non-destructive diagnostic tool for evaluating the quality of Nb thin films used in MKIDs and transmission lines. For a given fabrication process, we have both the X-ray diffraction data of the surface chemistry and a measure of the mm-wave and microwave loss, the latter being made in superconducting resonators.
superconducting films↗
Controlling antiferromagnetic domains in patterned La0.7Sr0.3FeO3 thin films
Transition metal oxide thin films and heterostructures are promising platforms to achieve full control of the antiferromagnetic (AFM) domain structure in patterned features as needed for AFM spintronic devices. In this work, soft x-ray photoemission electron microscopy was utilized to image AFM domains in micromagnets patterned into La0.7Sr0.3FeO3 (LSFO) thin films and La0.7Sr0.3MnO3 (LSMO)/LSFO superlattices. A delicate balance exists between magnetocrystalline anisotropy, shape anisotropy, and exchange interactions such that the AFM domain structure can be controlled using parameters such as LSFO and LSMO layer thickness, micromagnet shape, and temperature. In LSFO thin films, shape anisotropy gains importance only in micromagnets where at least one extended edge is aligned parallel to an AFM easy axis. In contrast, in the limit of ultrathin LSFO layers in the LSMO/LSFO superlattice, shape anisotropy effects dominate such that the AFM spin axes at micromagnet edges can be aligned along any in-plane crystallographic direction.
Lee, Michael S. (ORCID:0000000177852189)↗
Toughness distribution considerations in a thin film system
The spontaneous mechanical failure of thin films and occasionally substrates, due to the thin film deposition, are relatively common occurrences. Large internal stresses (e.g. 10 MPa to 100 MPa) are an inherent part of the thin film deposition process. In most cases where fracture mechanics has been applied to thin film systems, the failure path is confined a priori to the substrate-thin film interface or in the thin film perpendicular to that interface. This paper considers the contributions which determine the failure path and presents a qualitative model for identifying the failure path in a thin film system taking into account the presence of residual stresses. The most important aspect of this model is that it offers an explanation of the variation in the locus of failure that does not strictly depend on the weakest point of the material (i.e. the least work of fracture) being the first to fail. It does not, inherent to its construction, restrict failure to the interface a priori. The fracture mechanics criterion of the strain energy release rate equaling the material's resistance to crack growth leads to crack propagation at a specific location and defines the selection of the fracture path.
Brown, L. D.↗
Collaboration of the NASA Glenn Research Center and Rolls-Royce Developed Thin Film Multilayered Dielectrics for Harsh Environments
The use of thin films to electrically insulate thin film sensors on engine components minimizes the intrusiveness of the sensors and allows a more accurate measurement of the environment. A variety of insulating films were investigated for preventing electrical shorting caused by insulator failure between the sensor and the component. By alternating layers of sputtered high-temperature ceramics, a sequence of insulating layers was devised that (1) prevents pinholes from forming completely through the insulator and (2) maintains high electrical resistivity at high temperatures. The total thickness is only a fraction of that needed for conventional insulating techniques. The Sensors and Electronics Technology Branch of the NASA Glenn Research Center has an in-house effort to develop thin film sensors for surface measurement in propulsion system research. Thin film sensors do not require special machining of the components on which they are mounted, and they are considerably thinner (less than 10 mm thick) than wire or foil sensors. The thin film sensors are thus much less disturbing to the operating environment and have a minimal impact on the physical characteristics of the supporting component. To further this research, NASA Glenn and Rolls-Royce (Derby, UK), with assistance from the Ohio Aerospace Institute (OAI) and the Akima Corporation, pursued a joint investigation using multilayered thin film dielectrics as a reliable insulator in harsh environments. The use of a multilayered scheme is thought to be promising for the fabrication of electrically insulating thin films. A major cause of conduction in thin film dielectrics is the presence of defects, such as pinholes, that propagate through the film to the underlying substrate surface. By alternating the insulating material, each new growth pattern would deviate from the previous one, eliminating direct pathways for conduction to the substrate. The film depositions and testing were conducted in the Instrument Research Laboratory at Glenn. The multilayered insulator test samples were made from alumina and stainless steel shims that were first covered with a sputtered underlayer of either yttria-stabilized zirconia or chromium carbide, and then overcoated with a sputtered top layer of alumina. An example of a test sample is shown in the following photograph. Each multilayered insulator sample was 5 mm thick, at least an order of magnitude thinner than conventional insulators. The insulating properties of the samples were tested in a high-temperature air oven to determine their suitability. The multilayer insulators tested showed a stabilized film at temperatures in excess of 800 C (1472 F). The underlying materials in these multilayers allow thermal expansion stresses produced during the heating to be graded. The chromium carbide-alumina multilayer had the best adhesion at high temperatures, presumably from the induced chemical bonding between the substrate and the chromium carbide underlayer. However, the zirconia-alumina multilayer proved to have slightly better insulating properties when adhering. The application of the zirconia-alumina insulator has been demonstrated on a nickel-alloy fan blade, as shown. The insulators using thin film sensors still need to be tested in a relevant high-temperature combustion environment.
Wrbanek, John D.↗
Tunable Semiconducting Behavior and Linear-Nonlinear Optical Properties of Ag–Sn Dual-Doped Nanocrystalline CdO Thin Films for Optoelectronics
Semiconductor-based thin films have a great impact on determining the anticipated optoelectronic device construction and the advancement of cutting-edge applications. Herein, Ag and Sn dual-doped nanocrystalline transparent conducting CdO thin films were prepared on glass substrates using a cost-effective spray coating method, and their structural, morphological, optical, and semiconducting behaviors were investigated. The successful incorporation of Ag and Sn resulted in the polycrystalline nature of the deposited films without the additional peaks, as verified by X-ray diffraction (XRD) analysis. The XRD report also revealed the enhanced crystallinity (65%) at the higher doping level (3 wt % Ag and Sn-doped CdO film). All the deposited CdO films exhibited homogeneous, spherical, or round-shaped grains, with agglomeration revealed by scanning electron microscopy analysis. UV–visible spectroscopy was utilized to determine the linear and nonlinear optical properties of the deposited CdO thin films, and a reduction in the band gap from 3.891 to 3.772 eV was observed. A significant enhancement in the first- and third-order nonlinear susceptibility and nonlinear refractive index of the doped CdO films was also observed with increasing doping concentration. Hall effect data were collected at room temperature to investigate the electrical properties of all of the CdO films. The charge carrier concentration of CdO thin films was increased from 142.08 × 10 18 to 169.10 × 10 18 cm –3 , and the highest conductivity was found to be 192 s/cm on doping 3 wt % Ag–Sn. All the CdO thin films exhibited n-type conductivity, while an incredible n-type to p-type charge carrier transition was noticed at a higher doping level (3 wt % Ag–Sn). The findings of the current work are expected to advance the synthesis of semiconductor thin films through cost-effective spray coating methods for optoelectronic device applications.
deposition↗
Thin-film coatings
Thin, adherent, high density films are discussed with respect to their application in two plasma physics techniques (ion plating and sputtering). The operation of each technique is described as well as what surfaces can be coated, and what kind of materials can be applied. The effects of these films on the mechanical properties of solid surfaces are also discussed.
Buckley, D. H.↗
A-site- and/or B-site-modified PbZrTiO3 materials and (Pb, Sr, Ca, Ba, Mg) (Zr, Ti, Nb, Ta)O3 films having utility in ferroelectric random access memories and high performance thin film microactuators
A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.
Roeder, Jeffrey F.↗
A-SITE-AND/OR B-SITE-MODIFIED PBZRTIO3 MATERIALS AND (PB, SR, CA, BA, MG) (ZR, TI,NB, TA)O3 FILMS HAVING UTILITY IN FERROELECTRIC RANDOM ACCESS MEMORIES AND HIGH PERFORMANCE THIN FILM MICROACTUATORS
A modified PbZrTiO.sub.3 perovskite crystal material thin film, wherein the PbZrTiO.sub.3 perovskite crystal material includes crystal lattice A-sites and B-sites at least one of which is modified by the presence of a substituent selected from the group consisting of (i) A-site substituents consisting of Sr, Ca, Ba and Mg, and (ii) B-site substituents selected from the group consisting of Nb and Ta. The perovskite crystal thin film material may be formed by liquid delivery MOCVD from metalorganic precursors of the metal components of the thin film, to form PZT and PSZT, and other piezoelectric and ferroelectric thin film materials. The thin films of the invention have utility in non-volatile ferroelectric memory devices (NV-FeRAMs), and in microelectromechanical systems (MEMS) as sensor and/or actuator elements, e.g., high speed digital system actuators requiring low input power levels.
Roeder, Jeffrey F.↗
From Data to Discovery: AI's Transformative Role in Thin Film Research
The advancement of thin film technologies is pivotal for progress in numerous fields, including energy, electronics, and quantum computing. However, the traditional trial-and-error approach to materials discovery is inherently slow and inefficient. This presentation will showcase how artificial intelligence (AI) is transforming thin film research by enabling a data-driven paradigm shift. We will highlight our past successes in applying AI to understand radiation damage in thin film oxides, demonstrating how graph analytics can unravel complex material behavior. Additionally, we will provide insights into our current work at the National Renewable Energy Laboratory, where we are leading the charge in autonomous materials science. Backed by a $14M investment in our characterization facility, we are developing AI-guided workflows that seamlessly integrate experimentation and AI-guided decision-making. By harnessing the power of AI, we aim to accelerate the discovery and design of high-performance thin films, propelling innovation across a multitude of industries.
36 MATERIALS SCIENCE↗
Electrodeposited CuInSe2 Thin Film Junctions
We have investigated thin films and junctions based on copper indium diselenide (CIS) which have been grown by electrochemical deposition. CIS is a leading candidate for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a cost-effective method for producing thin-film CIS. We have produced both p and n type CIS thin films from the same aqueous solution by simply varying the deposition potential. A CIS pn junction was deposited using a step-function potential. Stoichiometry of the single layer films was determined by energy dispersive spectroscopy. Carrier densities of these films increased with deviation from stoichiometry, as determined by the capacitance versus voltage dependence of Schottky contacts. Optical bandgaps for the single layer films as determined by transmission spectroscopy were also found to increase with deviation from stoichiometry. Rectifying current versus voltage characteristics were demonstrated for the Schottky barriers and for the pn junction.
Raffaelle, R. P.↗