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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2024

Tunable multistate field-free switching and ratchet effect by spin-orbit torque in canted ferrimagnetic alloy

Spin-orbit torque is not only a useful probe to study manipulation of magnetic textures and magnetic states at the nanoscale but also it carries great potential for next-generation computing applications. Here we report the observation of rich spin-orbit torque switching phenomena such as field-free switching, multistate switching, memristor behavior and ratchet effect in a single shot, co-sputtered, rare earth-transition metal Gd x Co 100-x . Notably such effects have only been observed in antiferromagnet/ferromagnet bi-layer systems previously. We show that these effects can be traced to a large anistropic canting, that can be engineered into the Gd x Co 100-x system. Further, we show that the magnitude of these switching phenomena can be tuned by the canting angle and the in-plane external field. The complex spin-orbit torque switching observed in canted Gd x Co 100-x not only provides a platform for spintronics but also serves as a model system to study the underlying physics of complex magnetic textures and interactions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Spin–orbit torque switching of a ferromagnet with picosecond electrical pulses

The development of approaches that can efficiently control the magnetization of magnetic materials is central to the creation of fast and low-power spintronic devices. Spin transfer torque can be used to electrically manipulate magnetic order in devices, but is typically limited to nanosecond timescales. Alternatively, spin–orbit torque can be employed, and switching with current pulses down to ~200 ps has been demonstrated. However, the upper limit to magnetization switching speed remains unestablished. Here, we show that photoconductive switches can be used to apply 6-ps-wide electrical pulses and deterministically switch the out-of-plane magnetization of a common thin cobalt film via spin–orbit torque. We probe the ultrafast magnetization dynamics due to spin–orbit torques with sub-picosecond resolution using the time-resolved magneto-optical Kerr effect (MOKE). We also estimate that the magnetization switching consumes less than 50 pJ in micrometre-sized devices.

42 ENGINEERING↗
DOE OSTI2020

Exchange bias switching in an antiferromagnet/ferromagnet bilayer driven by spin-orbit torque

Here the electrical manipulation of magnetization and exchange bias in antiferromagnet/ferromagnet thin films could be of use in the development of the next generation of spintronic devices. Current-controlled magnetization switching can be driven by spin-orbit torques generated in an adjacent heavy metal layer, but these structures are difficult to integrate with exchange bias switching and tunnelling magnetoresistance measurements. Here, we report the current-induced switching of the exchange bias field in a perpendicularly magnetized IrMn/CoFeB bilayer structure using a spin-orbit torque generated in the antiferromagnetic IrMn layer. By manipulating the current direction and amplitude, independent and repeatable switching of the magnetization and exchange bias field below the blocking temperature can be achieved. The critical current density for the exchange bias switching is found to be larger than that for CoFeB magnetization reversal. X-ray magnetic circular dichroism, polarized neutron reflectometry measurements and micromagnetic simulations show that a small net magnetization within the IrMn interface plays a crucial role in these phenomena.

42 ENGINEERING↗
DOE OSTI2020

A parametric SPICE model for the simulation of spark gap switches

The use of SPICE-based software for the simulation of pulsed power systems—even large complex systems—has become commonplace in the pulsed power community. This is in contrast to earlier work in the field that relied on specially developed simulation codes such as Sandia’s Screamer or the Navy Research Lab’s Bertha, which natively incorporated models for common pulsed power components such as spark gap switches. Unlike these programs, SPICE programs provide a simple and familiar user interface and wide availability. However, SPICE programs do not include realistic models for key pulsed power circuit devices—including the spark gap switch. While simple switch models do exist in SPICE programs, these can only crudely approximate the behavior of a spark gap. This effort focuses on developing an SPICE circuit model for a gas-filled spark gap switch that is physically realistic while being simple enough to permit simulations to run in reasonable times on typical personal computers. Detailed information is provided for implementation in two common versions of SPICE: LTspice and Orcad PSPICE. Adaptation to other SPICE programs is possible with minimal modification. The model is intended as a design tool that uses physical parameters as inputs to connect it directly to the development of useable pulsed power systems. Data collected from the operation of a high-pressure pulsed-charged switch and a complete 12-stage Marx generator have been used to demonstrate the implementation and accuracy of the model over a wide range of parameters.

Pouncey, J. Cameron (ORCID:0000000153500816)↗
DOE OSTI2021

Ultrafast all-optical diffraction switching using semiconductor metasurfaces

Ultrafast all-optical switching using Mie resonant metasurfaces requires both on-demand tunability of the wavefront of the light and ultrafast time response. However, devising a switching mechanism that has a high contrast between its “on” and “off” states without compromising speed is challenging. Here, we report the design of a tunable Mie resonant metasurface that achieves this behavior. Our approach utilizes a diffractive array of semiconductor resonators that support both dipolar and quadrupolar Mie resonances. By balancing the strengths of the dipole and quadrupole resonances, we can suppress radiation into the first diffraction order, thus creating a clearly delineated “off”-state at the operating wavelength. Then, we use optical injection of free- carriers to spectrally shift the multipoles and rebalance the multipole strengths, thereby enabling radiation into the diffraction order—all on an ultrafast timescale. We demonstrate ultrafast off-to-on switching with I on /I off ≈ 5 modulation of the diffracted intensity and ultrafast on-to-off switching with Ion/Ioff ≈ 9 modulation. Furthermore, both switches exhibit a fast τ tr ≈ 2.7 ps relaxation time at 215 μJ cm -2 pump fluence. Further, we show that for higher fluences, the temporal response of the metasurface is governed by thermo-optic effects. This combination of multipole engineering with lattice diffraction opens design pathways for tunable metasurface-based integrated devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Ultraefficient resistance switching between charge ordered phases in 1 T -TaS 2 with a single picosecond electrical pulse

Progress in high-performance computing demands significant advances in memory technology. Among novel memory technologies that promise efficient device operation on a sub-ns timescale, resistance switching between charge ordered phases of 1T-TaS 2 has shown to be potentially useful for development of high-speed, energy efficient nonvolatile memory devices. Measurement of the electrical operation of such devices in the picosecond regime is technically challenging and hitherto still largely unexplored. Here, we use an optoelectronic “laboratory-on-a-chip” experiment for measurement of ultrafast memory switching, enabling accurate measurement of electrical switching parameters with 100 fs temporal resolution. Photoexcitation and electro-optic sampling on a (Cd,Mn)Te substrate are used to generate and, subsequently, measure electrical pulse propagation with intra-band excitation and sub-gap probing, respectively. We demonstrate high contrast nonvolatile resistance switching from high to low resistance states of a 1T-TaS 2 device using single sub-2ps electrical pulses. Using detailed modeling, we find that the switching energy density per unit area is exceptionally small, E A =9.4 fJ/μm 2 . Finally, the speed and energy efficiency of an electronic “write” process place the 1T-TaS 2 devices into a category of their own among new generation nonvolatile memory devices.

42 ENGINEERING↗
DOE OSTI2025

Thickness scaling and ferroelectric switching in wurtzite structure zinc magnesium oxide thin films

This study reports the thickness scaling of sputtered ferroelectric Zn 0.61 Mg 0.39 O (ZMO) thin films down to 43 nm. Encapsulated IrO 2 /ZMO/Ir capacitors exhibited switchable polarizations exceeding 50 μC cm −2 and coercive fields that increased from 3.9 to 4.4 MV cm −1 as the thickness decreased. Switching kinetics are best described by the simultaneous non-linear nucleation and the growth model. Bimodal switching is prevalent at low thicknesses, with the fastest switching times measured to be approximately 400 ns. Device encapsulation made ZMO switching kinetics more abrupt, potentially due to changes in the concentration of atmosphere-induced defects such as hydroxides. These results demonstrate stable ferroelectricity and sub-microsecond switching in sub-50 nm wurtzite ZMO, highlighting its potential as a low-voltage ferroelectric for integrated nonvolatile memory applications.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Optical subpicosecond nonvolatile switching and electron-phonon coupling in ferroelectric materials

Direct optical ferroelectric switching (FE switch) has the advantage of being ultrafast over the traditional FE switch, which relies on domain nucleation and growth. However, how to realize nonvolatility in such an optical FE switch poses a serious challenge. Time-dependent density-functional theory molecular dynamics study reveals that subpicosecond nonvolatile FE switches can be realized in GeTe and PbTiO 3 . Here, while optical tuning of the transition barrier and initiation of a directional atomic motion are crucial, the dephasing of the excited state holds the key for the realization of nonvolatility.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Manipulation of spin orientation via ferroelectric switching in Fe-doped Bi 2 WO 6 from first principles

Atomic-scale control of spins by electric fields is highly desirable for future technological applications. Magnetically doped Aurivillius-phase oxides present one route to achieve this, with magnetic ions substituted into the ferroelectric structure at dilute concentrations, resulting in spin-charge coupling. However, there has been minimal exploration of the ferroelectric switching pathways in this materials class, limiting predictions of the influence of an electric field on magnetic spins in the structure. Here, we determine the ferroelectric switching pathways of the end member of the Aurivillius phase family, Bi 2 WO 6 , using a combination of group theoretic analysis and density functional theory calculations. We find that in the ground state P2 1 ab phase, a two-step switching pathway via C2 and Cm intermediate phases provides the lowest energy barrier. Considering iron substitutions on the W site in Bi 2 WO 6 , we determine the spin easy axis. Finally, by tracking the change in spin directionality during ferroelectric switching, we find that a 90° switch in the polarization direction leads to a 112° reorientation of the spin easy axis. The low-symmetry crystal-field environment of Bi 2 WO 6 and magnetoelastic coupling on the magnetic dopant provide a route to spin control via an applied electric field.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Voltage-controlled magnetic anisotropy enabled by resistive switching

The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present an approach of utilizing resistive switching to control magnetic anisotropy. We study a ferromagnetic oxide that exhibits an electrically triggered metal-to-insulator phase transition producing a volatile resistive switching. The switching occurs in a characteristic spatial pattern, the formation of an insulating barrier perpendicular to the current flow, which results in an unusual ferromagnetic/paramagnetic/ferromagnetic configuration. Further, the formation of this voltage-driven paramagnetic insulating barrier is accompanied by the emergence of a strong uniaxial magnetic anisotropy that overpowers the intrinsic material anisotropy. Our results demonstrate that resistive switching is an effective tool for manipulating magnetic properties. Because resistive switching can be induced in a broad range of materials, our findings could enable a new class of voltage-controlled magnetism systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Absence of Evidence of Electrical Switching of the Antiferromagnetic Néel Vector

Much theoretical and experimental concern has been focused on the electrical switching of the antiferromagnetic (AFM) Néel vector via spin-orbit torque. Measurements employing multiterminal patterned structures of Pt=AFM show recurring signals of the supposedly planar Hall effect and magnetoresistance, implying AFM switching. We show in this Letter that similar signals have been observed in structures with and without the AFM layer, and of an even larger magnitude using different metals and substrates. These may not be the conclusive evidence of spin-orbit torque switching of AFM, but the thermal artifacts of patterned metal structure on substrate. Furthermore, large current densities in the metallic devices, beyond the Ohmic regime, can generate unintended anisotropic thermal gradients and voltages. AFM switching requires unequivocal detection of the AFM N´eel vector before and after SOT switching.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Current-induced switching of thin film α - Fe 2 O 3 devices imaged using a scanning single-spin microscope

Electrical switching of Néel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically driven switching of ferromagnetic order via spin-orbit torques, electrical switching of antiferromagnetic order remains poorly understood. Here we investigate the low-field magnetic properties of 30-nm-thick, c-axis-oriented α-Fe 2 ⁢O 3 Hall devices using a diamond nitrogen-vacancy center scanning microscope. Using the canted moment of α-Fe 2⁢ O 3 as a magnetic handle on its Néel vector, we apply a saturating in-plane magnetic field to create a known initial state before letting the state relax in low field for magnetic imaging. Here, we repeat this procedure for different in-plane orientations of the initialization field. We find that the magnetic field images are characterized by stronger magnetic textures for fields along [$\overline{11}$20] and 11$\overline{2}$0, suggesting that despite the expected 3-fold magnetocrystalline anisotropy, our α-Fe 2 ⁢O 3 thin films have an overall in-plane uniaxial anisotropy. We also study current-induced switching of the magnetic order in α-Fe 2 ⁢O 3 . We find that the fraction of the device that switches depends on the current pulse duration, amplitude, and direction relative to the initialization field.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Design of Auxiliary Circuit Elements for Achieving Zero Voltage Switching in a Wireless Power Transfer System

The auxiliary resonant commutated pole (ARCP) is being used to achieve zero voltage switching (ZVS) of power switches for improved efficiency and/or to reduce dv/dt at the switch node for better electromagnetic interference (EMI) performance and overall system reliability. This paper shows how an ARCP circuit can be used in a wireless power transfer system to achieve ZVS. Detailed analysis of ARCP circuit operation is presented to determine the requirements for achieving ZVS in the main switches of a wireless electric vehicle charging system. Based on this analysis, a design algorithm is developed to optimize the design of the ZVS assisting circuit components. The designed ARCP achieves soft switching of the MOSFETs in the primary inverter of an 85 kHz, 10 kW series-series compensated, stationary wireless power transfer system.

Saha, Tarak↗
DOE OSTI2023

Zero Voltage Switching AC-DC Converter Based on Zero State Modulation (ZSM)

In this paper, a half-bridge building block that can achieve soft switching across the complete operating range while operating under fixed frequency is proposed. In addition, dead-beat model predictive controls to control the same are also proposed. The proposed converter, referred to as zero-state modulated (ZSM) converter, uses a zero state, enabled by a small auxiliary switch, to achieve soft-switching. The approach allows lower switching loss, controlled dv/dt, small filter inductor, fixed frequency operation allowing interleaving to reduce filter capacitor. A single half-bridge building block can used to realize a ZVS DC-DC converter or multiple of these building blocks can be used to achieve soft switching 1-phase or 3-phase AC-DC converters.

Kandula, Prasad↗
DOE OSTI2022

Switching Dynamics in Vanadium Dioxide-Based Stochastic Thermal Neurons

We report on switching dynamics of individual and coupled vanadium dioxide (VO 2 ) devices subject to voltage pulses as the temperature is systematically varied from room temperature spanning the insulator–metal transition (IMT) temperature. The switching voltage of single devices has a strong relationship with both temperature and voltage pulsewidth. Two-step switching in connected VO 2 devices has been noted in current transient plots and was found to depend on temperature, pulsewidth, and pulse amplitude. Experimental switching behavior measured from VO 2 artificial neurons was implemented into a spiking neural network (SNN). During training, modulating the switching voltage via temperature affords a novel method to implement homeostasis with the coupled devices. Simulation results show the efficacy of the stochastic neuronal characteristics and the proposed homeostasis mechanism on a standard digit recognition task. As a result, these studies contribute to ongoing efforts in neuromorphic computing exploiting collective phase transitions.

42 ENGINEERING↗
DOE OSTI2019

A Hybrid Modulation Method for Single-Stage Soft-Switching Inverter Based on Series Resonant Converter

Pseudo-dc-link inverters are promising due to the single-stage configuration. The inverters can be isolated by high-frequency transformers, which also provide the freedom of step-up/down through winding turns ratio. Conventionally, a pseudo-dc-link inverter is based upon a pulsewidth modulation converter like flyback converter, but the accompanying switching losses can degrade efficiency and overall system performance. Alternatively, resonant converters (e.g., series resonant converter) seem to fit the need as they typically display soft-switching characteristics. However, the relevant research results are scarce because of two main reasons: high resonant current and limited soft-switching range. To overcome the difficulties, a hybrid modulation method is proposed in this article for a pseudo-dc-link inverter based on series resonant converter. In high-line region, the inverter operates with variable-frequency modulation, which leads to zero-voltage switching and relatively low-resonant current. In low-line region, the inverter operates with a short-pulse density modulation so that switching losses are greatly curtailed without excessive resonant current. The merits in both regions together contribute toward the high efficiency of the inverter. This article presents the operational principle of the proposed modulation as well as a comparison with other modulation methods. In addition, a 400 V-230 Vac, 2-kW prototype was built to verify the proposed modulation and the peak efficiency reaches 98.0%.

42 ENGINEERING↗
DOE OSTI2024

Switching it up: New mechanisms revealed in wurtzite-type ferroelectrics

Wurtzite-type ferroelectrics have drawn increasing attention due to the promise of better performance and integration than traditional oxide ferroelectrics with semiconductors such as Si, SiC, and III-V compounds. However, wurtzite-type ferroelectrics generally require enormous electric fields, approaching breakdown, to reverse their polarization. The underlying switching mechanism(s), especially for multinary compounds and alloys, remains elusive. Here, we examine the switching behaviors in Al 1-x Sc x N alloys and wurtzite-type multinary candidate compounds we recently computationally identified. We find that switching in these tetrahedrally coordinated materials proceeds via a variety of nonpolar intermediate structures and that switching barriers are dominated by the more-electronegative cations. For Al 1-x Sc x N alloys, we find that the switching pathway changes from a collective mechanism to a lower-barrier mechanism enabled by inversion of individual tetrahedra with increased Sc composition. Our findings provide insights for future engineering and realization of wurtzite-type materials and open a door to understanding domain motion.

36 MATERIALS SCIENCE↗