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At least 127 records · Page 7

All sources NASA NTRS DOE OSTI

NASA NTRS1977

A theoretical study of heterojunction and graded band gap type solar cells

A computer program was designed for the analysis of variable composition solar cells and applied to several proposed solar cell structures using appropriate semiconductor materials. The program simulates solar cells made of a ternary alloy of two binary semiconductors with an arbitrary composition profile, and an abrupt or Gaussian doping profile of polarity n-on-p or p-on-n with arbitrary doping levels. Once the device structure is specified, the program numerically solves a complete set of differential equations and calculates electrostatic potential, quasi-Fermi levels, carrier concentrations and current densities, total current density and efficiency as functions of terminal voltage and position within the cell. These results are then recorded by computer in tabulated or plotted form for interpretation by the user.

Sutherland, J. E.↗

DOE OSTI2025

UV-Enabled Defect Engineering in Multilayer GaSe and InSe and UV Writing of the Grating Pattern

III–VI post-transition-metal chalcogenides are layered semiconductor materials that exhibit direct band gaps in multilayers. Defect engineering is essential in 2D layered semiconductors for functional devices. Here, in this work, we report defect engineering in multilayer gallium selenide (GaSe) and indium selenide (InSe), where defects generated by ultraviolet (UV, 325 nm) laser irradiation result in an additional photoluminescence (PL) line. The additional PL line is due to defect-bound excitons. Characteristics of the defect emission are similar in GaSe and InSe samples subjected to UV irradiation, air annealing, and hydrostatic pressure. Two-beam UV interference was applied to create grating patterns with a periodic array of low and high densities of defects in GaSe. Density functional theory has identified the defect type in GaSe. The results provide valuable insights into defect generation and UV scribing of photonic circuits in 2D Se-based multilayers for optical integration in a 2D platform.

2D multilayered materials↗

NASA NTRS1980

Ohmic contact to p-type indium phosphide

Low-Series-resistance ohmic contact to p-type InP semiconductor material is achieved in technique utilizing Au-Ge-Zn eutectic alloy. Alloy sets and adheres well to semiconductor surface with higher acceptor concentration at metal semiconductor interface. Technique has provided satisfactory for pn junction LED's and lasers.

Hawrylo, F. Z.↗

NASA NTRS1973

Semiconductor surface protection material

A method and a product for protecting semiconductor surfaces is disclosed. The protective coating material is prepared by heating a suitable protective resin with an organic solvent which is solid at room temperature and converting the resulting solution into sheets by a conventional casting operation. Pieces of such sheets of suitable shape and thickness are placed on the semiconductor areas to be coated and heat and vacuum are then applied to melt the sheet and to drive off the solvent and cure the resin. A uniform adherent coating, free of bubbles and other defects, is thus obtained exactly where it is desired.

Packard, R. D.↗

DOE OSTI2025

Evaluating Brightness and Stability of Cathodoluminescence from Colloidal Semiconductor Nanocrystals

Cathodoluminescence offers promise as a technique for correlation of atomic structure with electronic structure at the level of individual nanoparticles or even defects, with the ability to analyze complex nanostructures at length-scales far below those typically available to optical spectroscopy. Unlike other forms of electron microscopy, cathodoluminescence offers direct insights into the electronic structure of the visualized sample. Despite reports more than 10 years ago of individual nanoparticle cathodoluminescence, effective cathodoluminescence collection from colloidal semiconductor materials is relatively rare and remains challenging due to the instability of materials under the conditions of electron beam irradiation. In this work, to clarify the roadblocks for cathodoluminescence analysis of colloidal nanocrystals, we attempt a comprehensive study of the cathodoluminescence properties of semiconductor quantum shells, which have a thin concentric CdSe shell surrounding CdS nanoparticles, then surrounded by a further concentric CdS shell. These same materials were recently demonstrated to show promising scintillation performance in radioluminescence measurements, including high brightness (up to 100 ph/keV) and excellent durability. Comparative quantum yield measurements are designed to assess the brightness of semiconductor nanocrystal films, which show that the quantum shells are much less bright under electron irradiation compared to X-ray photons. Instability of CL emission is assigned to charging effects on the samples—and not thermal effects—through a series of voltage, current, dwell time, and atmospheric pressure experiments.

cathodoluminescence↗

NASA NTRS1980

Materials processing in space: Early experiments

The characteristics of the space environment were reviewed. Potential applications of space processing are discussed and include metallurgical processing, and processing of semiconductor materials. The behavior of fluid in low gravity is described. The evolution of apparatus for materials processing in space was reviewed.

Naumann, R. J.↗

NASA NTRS2007

Decontamination of Genesis Array Materials by UV Ozone Cleaning

Shortly after the NASA Genesis Mission sample return capsule returned to earth on September 8, 2004, the science team discovered that all nine ultra-pure semiconductor materials were contaminated with a thin molecular organic film approximately 0 to 100 angstroms thick. The organic contaminate layer, possibly a silicone, situated on the surface of the materials is speculated to have formed by condensation of organic matter from spacecraft off-gassing at the Lagrange 1 halo orbit during times of solar exposure. While the valuable solar wind atoms are safely secured directly below this organic contamination and/or native oxide layer in approximately the first 1000 angstroms of the ultra-pure material substrate, some analytical techniques that precisely measure solar wind elemental abundances require the removal of this organic contaminate. In 2005, Genesis science team laboratories began to develop various methods for removing the organic thin film without removing the precious material substrate that contained the solar wind atoms. Stephen Sestak and colleagues at Open University first experimented with ultraviolet radiation ozone (UV/O3) cleaning of several non-flight and flown Genesis silicon wafer fragments under a pure flowing oxygen environment. The UV/O3 technique was able to successfully remove organic contamination without etching into the bulk material substrate. At NASA Johnson Space Center Genesis Curation Laboratory, we have installed an UV/O3 cleaning devise in an ambient air environment to further experimentally test the removal of the organic contamination on Genesis wafer materials. Preliminary results from XPS analysis show that the UV/O3 cleaning instrument is a good non-destructive method for removing carbon contamination from flown Genesis array samples. However, spectroscopic ellipsometry results show little change in the thickness of the surface film. All experiments to date have shown UV/O3 cleaning method to be the best non-destructive method for removing organic contamination from the surface of the Genesis materials. The UV/O3 cleaning process can also clean carbon contamination to levels below non-flight standards. This can be seen by comparing sample 60260's carbon 10667 cps with non-flight Si carbon 21675 cps. Therefore, surface carbon contamination should not hinder the analysis of solar wind.

Calaway, Michael J.↗

NASA NTRS1977

Germanium coated microbridge and method

A superconducting microbridge is provided for use in superconducting quantum interference devices wherein a pair of spaced layers of superconductive material are connected by a weak link bridge to establish an electrical junction. The superconductive layers and bridge are coated with a semiconductor material shunting the bridge at room temperatures to prevent the destruction of the device by minute electrical currents while the coating acts as a dielectric permitting normal electrical behavior of the microbridge at cryogenic temperatures.

Holderman, L. B.↗

NASA NTRS1983

Crystal growth of device quality GaAs in space

GaAs device technology has recently reached a new phase of rapid advancement, made possible by the improvement of the quality of GaAs bulk crystals. At the same time, the transition to the next generation of GaAs integrated circuits and optoelectronic systems for commercial and government applications hinges on new quantum steps in three interrelated areas: crystal growth, device processing and device-related properties and phenomena. Special emphasis is placed on the establishment of quantitative relationships among crystal growth parameters-material properties-electronic properties and device applications. The overall program combines studies of crystal growth on novel approaches to engineering of semiconductor material (i.e., GaAs and related compounds); investigation and correlation of materials properties and electronic characteristics on a macro- and microscale; and investigation of electronic properties and phenomena controlling device applications and device performance.

Gatos, H. C.↗

NASA NTRS2007

Conversion of type of quantum well structure

A method for converting a Type 2 quantum well semiconductor material to a Type 1 material. A second layer of undoped material is placed between first and third layers of selectively doped material, which are separated from the second layer by undoped layers having small widths. Doping profiles are chosen so that a first electrical potential increment across a first layer-second layer interface is equal to a first selected value and/or a second electrical potential increment across a second layer-third layer interface is equal to a second selected value. The semiconductor structure thus produced is useful as a laser material and as an incident light detector material in various wavelength regions, such as a mid-infrared region.

Ning, Cun-Zheng↗

NASA NTRS2007

Conversion of Type of Quantum Well Structure

Ning, Cun-Zheng↗

NASA NTRS1971

Detection techniques for tenuous planetary atmospheres

The development of new types of detectors for analysis of planetary atmospheres is discussed. Initially, the interest was in detectors for use under partial vacuum conditions. The program has been extended to include detectors for use at one atmosphere and adsorption system for control and separation of gases. Results to date have included detectors for O2 and H2 under partial vacuum conditions. Experiments on detectors for use at high pressures began in 1966, and systems for CO, H2, and O2, were reported. Electrically controlled adsorbent was developed. It was demonstrated that under proper conditions a thin film of semiconductor material could be electrically cycled to adsorb and desorb a specific gas. This work was extended to obtain quantitative data on the use of semiconductors as controllable adsorbents.

Hoenig, S. A.↗

NASA NTRS1974

Detection techniques for tenuous planetary atmospheres

The development of new types of detectors for analysis of planetary atmospheres is discussed. Initially, the interest was in detectors for use under partial vacuum conditions; recently, the program has been extended to include detectors for use at one atmosphere and adsorption systems for control and separation of gases. Results to date have included detector for O2 and H2 under partial vacuum conditions. Experiments on detectors for use at high pressures began in 1966; and systems for CO, H2, and O2 were reported in 1967 and 1968. In 1968 studies began on an electrically controlled adsorbent. It was demonstrated that under proper conditions a thin film of semiconductor material could be electrically cycled to absorb and desorb a specific gas. This work was extended to obtain quantitative data on the use of semiconductors as controllable adsorbents.

Hoenig, S. A.↗

NASA NTRS1982

Electronics materials research

The electronic materials and is aimed at the establishment of quantitative relationships underlying crystal growth parameters, materials properties, electronic characteristics and device applications. The overall program evolves about the following main thrust areas: (1) crystal growth novel approaches to engineering of semiconductor materials; (2) investigation of materials properties and electronic characteristics on a macro and microscale; (3) surface properties and surface interactions with the bulk and ambients; (4) electronic properties controlling device applications and device performance.

Source record↗

NASA NTRS2006

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

Qiu, Yueming↗

NASA NTRS1965

Effect of 40-mev protons on semiconductors as determined with an improved method of measuring diffusion length of minority carriers

Radiation induced changes in semiconductor materials from 40 MeV proton radiation determined by improved infrared method

IRRADIATION↗

NASA NTRS1972

Magnetically actuated tuning method for Gunn oscillators

A tunable microwave generator based on the Gunn effect is disclosed. The generator includes a semiconductor material which exhibits the Gunn effect when current flows between anode and cathode end contacts. The material has a plurality of sides each with a scratch at a different distance from the anode contact. A magnetic field is produced by a magnet placed about the semiconductor field. The Lorentz force produced as a function of the current flow and the magnetic field drive the electrons to the surface of one of the sides to cause nucleation to occur at the scratch. A domain formed thereat travels to the anode contact to provide pulses at a frequency which is related to the distance between the scratch and the anode contact.

Sacks, B. H.↗

NASA NTRS1987

Soft x ray window encapsulant for HgI2 detectors

HgI2 is an excellent semiconductor material for a low energy, room temperature x-ray spectrometer. The high values of the atomic numbers for its constituent elements gives high x-ray and gamma ray stopping power. The band gap of HgI2 is significantly higher than other commonly used semiconductors. Owing to the large value band gap, the leakage current for HgI2 devices is smaller, thus allowing low noise performance. Devices fabricated from HgI2 crystals have demonstrated energy resolution sufficient to distinguish the x-ray emission from the neighboring elements on the periodic table. Also the power requirements of HgI2 are very low. These characteristics make a HgI2 spectrometer an ideal component in a satellite based detection system. Unfortunately, HgI2 crystals tend to deteriorate with time, even if protected by standard semiconductor encapsulants. This degradation ruins the performance of the device in terms of its energy resolution and pulse amplitude. The degrading mechanism is believed to be material loss occurring from below the electrodes, due to high vapor pressure of HgI2 at room temperature. To address this major obstacle to rapid expansion of HgI2 technology, a research program aimed at improving device stability by encapsulation with inert polymeric materials was carried out. The program focused specifically on optimizing the encapsulant materials and their deposition techniques. The principal objectives for this program were device encapsulation, device testing, and accelerated testing to ensure very long term stability of these high resolution sensors. A variety of encapsulants were investigated with the selection criteria based on their chemical diffusion barrier properties, mechanical stability, reactivity, and morphology of encapsulant films. The investigation covered different classes of encapsulants including solvent based encapsulants, vapor deposited encapsulants, and plasma polymerized encapsulants. A variety of characterization techniques were employed to examine their effectiveness in stabilizing HgI2 devices; these included permeability evaluation, vacuum and heat testing, scanning electron microscopy (SEM) as well as studying the detector performance of coated detectors. The plasma polymerized films appear to have entirely solved the HgI2 degradation problem. Another achievement of this program was the development of an accelerated testing technique which correlates extremely well with long term tesing.

Entine, G.↗