Magnetically actuated tuning method for Gunn oscillators

Abstract

A tunable microwave generator based on the Gunn effect is disclosed. The generator includes a semiconductor material which exhibits the Gunn effect when current flows between anode and cathode end contacts. The material has a plurality of sides each with a scratch at a different distance from the anode contact. A magnetic field is produced by a magnet placed about the semiconductor field. The Lorentz force produced as a function of the current flow and the magnetic field drive the electrons to the surface of one of the sides to cause nucleation to occur at the scratch. A domain formed thereat travels to the anode contact to provide pulses at a frequency which is related to the distance between the scratch and the anode contact.