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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Role of Anions in Stabilizing the [Zn–Al] Layered Double Hydroxides: A Thermodynamic Study

Here, room-temperature acid solution calorimetry, high-temperature oxide melt solution calorimetry, and low-temperature heat capacity measurements were employed to calculate the thermodynamic stabilities of the [Zn–Al–X] layered double hydroxides (LDH) containing different anions (X = Cl – , CO 3 2– , and SO 4 2– ). Cryogenic heat capacity measurements demonstrated a Schottky-type anomaly in the heat capacity of all three LDHs below 11 K. This anomaly is attributed to the tunneling of protons between adjacent oxygen atoms in the LDH interlayer as this creates an energy system similar to a two-level system modeled with a Schottky term. These heat capacity measurements were also used to determine vibrational entropies which, when combined with configurational entropies, provide standard entropies of these LDHs. Enthalpies of formation of LDHs from binary components were determined and combined with the entropies of formation to calculate Gibbs free energies. Based on these values, the order of stability is [Zn–Al–SO 4 ] > [Zn–Al–CO 3 ] > [Zn–Al–Cl]. This trend results from a combination of the interlayer spacing, amount of water in the interlayer, interactions among the interlayer species, and interactions between the metal hydroxide layer and the interlayer.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

Core/Shell-Like Localized Emission at Atomically Thin Semiconductor–Au Interface

Localized emission in atomically thin semiconductors has sparked significant interest as single-photon sources. Despite comprehensive studies into the correlation between localized strain and exciton emission, the impacts of charge transfer on nanobubble emission remains elusive. Here, in this paper, we report the observation of core/shell-like localized emission from monolayer WSe 2 nanobubbles at room temperature through near-field studies. By altering the electronic junction between monolayer WSe 2 and the Au substrate, one can effectively adjust the semiconductor to metal junction from a Schottky to an Ohmic junction. Through concurrent analysis of topography, potential, tip-enhanced photoluminescence, and a piezo response force microscope, we attribute the core/shell-like emissions to strong piezoelectric potential aided by induced polarity at the WSe 2 –Au Schottky interface which results in spatial confinement of the excitons. Our findings present a new approach for manipulating charge confinement and engineering localized emission within atomically thin semiconductor nanobubbles. These insights hold implications for advancing the nano and quantum photonics with low-dimensional semiconductors.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2022

Surface Immobilization of a Re(I) Tricarbonyl Phenanthroline Complex to Si(111) through Sonochemical Hydrosilylation

A sonochemical-based hydrosilylation method was employed to covalently attach a rhenium tricarbonyl phenanthroline complex to silicon(111). fac-Re(5-(p-Styrene)-phen)(CO) 3 Cl (5-(p-styrene)-phen = 5-(4-vinylphenyl)-1,10-phenanthroline) was reacted with hydrogen-terminated silicon(111) in an ultrasonic bath to generate a hybrid photoelectrode. Subsequent reaction with 1-hexene enabled functionalization of remaining atop Si sites. Attenuated total reflectance–Fourier transform infrared spectroscopy confirms attachment of the organometallic complex to silicon without degradation of the organometallic core, supporting hydrosilylation as a strategy for installing coordination complexes that retain their molecular integrity. Detection of Re(I) and nitrogen by X-ray photoelectron spectroscopy (XPS) further support immobilization of fac-Re(5-(p-styrene)-phen)(CO) 3 Cl. Cyclic voltammetry and electrochemical impedance spectroscopy under white light illumination indicate that fac-Re(5-(p-styrene)-phen)(CO) 3 Cl undergoes two electron reductions. Mott–Schottky analysis indicates that the flat band potential is 239 mV more positive for p-Si(111) co-functionalized with both fac-Re(5-(p-styrene)-phen)(CO) 3 Cl and 1-hexene than when functionalized with 1-hexene alone. XPS, ultraviolet photoelectron spectroscopy, and Mott–Schottky analysis show that functionalization with fac-Re(5-(p-styrene)-phen)(CO) 3 Cl and 1-hexene introduces a negative interfacial dipole, facilitating reductive photoelectrochemistry.

X-ray photoelectron spectroscopy↗
DOE OSTI2025

One-Step Transfer of Symmetric and Asymmetric Contacts for Large-Scale 2D Electronics and Optoelectronics

Two-dimensional (2D) semiconductors are highly promising candidates for thin-film transistor applications due to their scalability, transferability, atomic thickness, and relatively high carrier mobility. However, a substantial performance gap remains between individual devices based on single-crystalline 2D films and wafer-scale integrated circuits, primarily due to defects introduced during conventional fabrication processes. Here, we report a diamond-assisted electrode transfer technique for the van der Waals integration of wafer-scale prefabricated electrode arrays onto 2D materials, enabling scalable electronics and optoelectronics. Implemented on metal–organic chemical vapor deposition-grown monolayer molybdenum disulfide, this method forms ultraclean metal–semiconductor interfaces, yielding field-effect transistors with excellent ohmic contacts, a low contact resistance of 400 Ω·μm, and a Schottky barrier height of only 9 meV. Furthermore, we demonstrate a scalable transistor array on monolayer molybdenum disulfide with excellent device performance uniformity, achieving an average field-effect mobility of 30 cm 2 V –1 s –1 and an on/off current ratio exceeding 105. Additionally, high photocurrent and responsivity were demonstrated in the array devices, showing their potential for excellent image detection. We further demonstrate the versatility of this technique by fabricating a Schottky diode array through a single-step transfer of asymmetric electrodes─low work function aluminum and high work function gold─onto monolayer tungsten diselenide. This approach provides a clean, effective solution for contact engineering in 2D materials, offering a viable pathway toward wafer-scale, high-performance 2D electronics, optoelectronics, and integrated circuits.

2D electronics↗
DOE OSTI2020

W-band system-on-chip electron cyclotron emission imaging system on DIII-D

Monolithic, millimeter wave “system-on-chip” (SoC) technology has been employed in heterodyne receiver integrated circuit radiometers in a newly developed Electron Cyclotron Emission Imaging (ECEI) system on the DIII-D tokamak for 2D electron temperature profile and fluctuation evolution diagnostics. Here, a prototype module operating in E-band (72-80 GHz) was first employed in a 2 x 10 element array that demonstrated significant improvements over the previous quasi-optical Schottky diode mixer arrays during the 2018 operational campaign of the DIII-D tokamak. For compatibility with International Thermonuclear Experimental Reactor (ITER) relevant scenarios on DIII-D, the SoC ECEI system was upgraded with 20 horn-waveguide receiver modules. Each individual module contains a University of California at Davis designed W-band (75 -110 GHz) receiver die that integrates a broadband low noise amplifier (LNA), a double balanced down-converting mixer, and a x4 multiplier on the local oscillator (LO) chain. A x2 multiplier and two IF amplifiers are packaged and selected to further boost the signal strength as well as downconvert the signal frequency. The upgraded W-band array exhibits > 30 dB additional gain and 20x improvement in noise temperature comparing with the previous Schottky diode radio frequency (RF) mixer input systems; an internal 8 times multiplier chain is used to bring down the LO frequency below 12 GHz, thereby obviating the need for a large aperture for quasi-optical LO coupling and replacing it with coaxial connectors. The horn-waveguide shielding housing avoids out-of-band noise interference on each individual module. The upgraded ECEI system plays an important role for absolute electron temperature evolution and fluctuation measurements for edge and core region transport physics studies.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2021

Low barrier height in a ZnO nanorods/NbSe 2 heterostructure prepared by van der Waals epitaxy

Two-dimensional (2D) materials as contacts for semiconductor devices have attracted much attention due to minimizing Fermi level pinning. Schottky–Mott physics has been widely employed to design 2D material-based electrodes and to elucidate their contact behavior. In this study, we revealed that charge transfer across a 2D/semiconductor heterointerface and materials characteristics besides work function should be accounted for in fabrication of electrodes based on 2D materials. Our density functional theory (DFT) calculations predicted that charge transfer between ZnO and NbSe 2 lowers the barrier height at the heterojunction and that conductive surface states of ZnO provide an additional conduction channel in the ZnO/NbSe 2 heterostructures. Crystalline ZnO/NbSe 2 heterostructures were prepared by the hydrothermal method. Electrical characterizations of the ZnO/NbSe 2 heterostructures showed Ohmic-like behavior as predicted by the DFT calculations, opposed to the prediction based on the Schottky–Mott model.

2D materials↗
DOE OSTI2020

Enhancing ZnO nanowire gas sensors using Au/Fe 2 O 3 hybrid nanoparticle decoration

Heterojunctions are an important strategy for designing high performance electrical sensor materials and related devices. Herein, a new type of metal-semiconductor hybrid nanoparticle has been successfully used to remarkably sensitize the surface of ZnO nanowires for detecting NO 2 with high responses over a broad temperature window ranging from room temperature to 600 °C. These hybrid nanoparticles are comprised of iron oxide nanowires with well dispersed single crystalline Au nanoparticles. The hybrid nanoparticle decorated ZnO nanowires have achieved a giant response, as high as 74 500 toward NO 2 gas, about 42 times that of Au decorated ZnO nanowire sensors. This dramatic enhancement may be attributed to the efficient charge transfer across the Au–Fe 2 O 3 Schottky and Fe 2 O 3 –ZnO semiconductor heterojunction interfaces. Due to the incorporation of thermally-stable Fe 2 O 3 nanoparticles as the support of Au nanoparticles, the working temperature of nanowire sensors was successfully extended to higher temperatures, with an increase of 200 °C, from 400 °C to 600 °C. Such a combination of semiconductor heterojunction and semiconductor-metal Schottky contact presents a new strategy for designing high performance electrical sensors with high sensitivity, stability, selectivity, and wide operation temperature window, which are potentially suitable for advanced energy systems such as automotive engines and power plants.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2024

Characterizing electron-collecting CdTe for use in a 77 ns burst-rate imager

The Keck-PAD (pixel array detector) was developed at Cornell as a burst-rate imager capable of recording images from successive electron bunches (153 ns period) from the Advanced Photon Source (APS). Both Si and hole-collecting Schottky CdTe have been successfully bonded to this ASIC (application-specific integrated circuit) and used with this frame rate. The facility upgrades at the APS will lower the bunch period to 77 ns, which will require modifications to the Keck-PAD electronics to image properly at this reduced period. In addition, operation at high X-ray energies will require a different sensor material having a shorter charge collection time. For the target energy of 40 keV for this project, simulations have shown that electron-collecting CdTe should allow >90% charge collection within 35 ns. This collection time will be sufficient to sample the signal from one frame and prepare for the next. 750 µm-thick electron-collecting Schottky CdTe has been obtained from Acrorad and bonded to two different charge-integrating ASICs developed at Cornell, the Keck-PAD and the CU-APS-PAD. Carrier mobility has been investigated using the detector response to single X-ray bunches at the Cornell High Energy Synchrotron Source and to a pulsed optical laser. The tests indicate that the collection time will meet the requirements for 77 ns imaging.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Performance Evaluation and Loss Modeling of WBG Devices based on a Novel Double-Pulse Test Method for Current Source Inverter

Careful measurements of the power device characteristics are necessary to accurately estimate a power converter's losses and efficiency. The conventional double-pulse test (DPT) circuit is a well-known method to implement this laboratory characterization of power devices and power modules. However, the switching characteristics of a power device depend on the power electronics circuit in which it is connected as well as the power circuit's physical layout, in addition to the device's internal structure. Hence, the conventional DPT circuit configuration, which is tailored for a standard voltage-source inverter (VSI), is not well-suited for a current-source inverter (CSI). This paper demonstrates a previously-proposed CSI-based DPT measurement technique that is appropriate for normal CSI operation. The characteristics of SiC MOSFETs and series-connected SiC Schottky diodes used in a CSI are measured using this improved technique while taking temperature effects into account to yield more accurate loss predictions. The CSI losses, including the switching and conduction losses of SiC MOSFETs and SiC Schottky diodes, have been modeled using this approach. The total CSI losses and efficiency have been estimated based on the CSI DPT results and loss models.

42 ENGINEERING↗
DOE OSTI2020

High temperature operation to 500 °C of AlGaN graded polarization-doped field-effect transistors

AlGaN polarization-doped field-effect transistors were characterized by DC and pulsed measurements from room temperature to 500 °C in ambient. DC current-voltage characteristics demonstrated only a 70% reduction in on-state current from 25 to 500 °C and full gate modulation, regardless of the operating temperature. Near ideal gate lag measurement was realized across the temperature range that is indicative of a high-quality substrate and sufficient surface passivation. The ability for operation at high temperature is enabled by the high Schottky barrier height from the Ni/Au gate contact, with values of 2.05 and 2.76 eV at 25 and 500 °C, respectively. The high barrier height due to the insulatorlike aluminum nitride layer leads to an ION/IOFF ratio of 1.5 × 10 9 and 6 × 10 3 at room temperature and 500 °C, respectively. Transmission electron microscopy was used to confirm the stability of the heterostructure even after an extended high-temperature operation with only minor interdiffusion of the Ni/Au Schottky contact. The use of refractory metals in all contacts will be key to ensure a stable extended high-temperature operation.

36 MATERIALS SCIENCE↗
DOE OSTI2021

The electronic states of ITO–MoS2: Experiment and theory

Abstract We report a combination of experimental results with density functional theory (DFT) calculations to understand electronic structure of indium tin oxide and molybdenum disulfide (ITO–MoS 2 ) interface. Our results indicate ITO and MoS 2 conform an n-type Schottky barrier of c.a. − 1.0 eV due to orbital interactions; formation of an ohmic contact is caused by semiconducting and metal behavior of ITO as a function of crystal plane orientation. ITO introduces energy levels around the Fermi level in all interface models in the Γ-Μ-Κ-Γ path. The resulted Van der Waals interface and the values of Schottky barrier height enhance electron carrier injection. Graphical abstract

López-Galán, Oscar A. (ORCID:0000000292912562)↗
DOE OSTI2024

Characterization of Mn 5 Ge 3 Contacts on a Shallow Ge/SiGe Heterostructure

Mn 5 Ge 3 is a ferromagnetic phase of the Mn-Ge system that is a potential contact material for efficient spin injection and detection. Here, we investigate the creation of Mn 5 Ge 3 -based contacts on a Ge/SiGe quantum well heterostructure via solid-state synthesis. X-ray diffraction spectra fitting indicates the formation of Mn 5 Ge 3 -based contacts on bulk Ge and Ge/SiGe. High-resolution scanning transmission electron microscopy imaging and energy dispersive X-ray spectroscopy verify the correct Mn 5 Ge 3 -based phase formation. Schottky diode measurements, transmission line measurements, and Hall measurements reveal that Mn 5 Ge 3 -based contacts serve as good p-type contacts for Ge/SiGe quantum well heterostructures due to having a low Schottky barrier height of 0.10 eV (extracted from a Mn 5 Ge 3 /n-Ge analogue) and a contact resistance in the order of 1 kΩ. Furthermore, we show that these electrical characteristics have a gate-voltage dependence, thereby providing tunability.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Stochastic Cooling with Strong Band Overlap

Up to present time the stochastic cooling was only tested and used at the microwave frequencies. Majority of these stochastic cooling systems operate without Schottky band overlap which greatly simplifies tuning of cooling systems and removes unwanted coupling between different cooling systems. A transition from the microwave stochastic cooling to the optical stochastic cooling or to the coherent electron cooling increases the central frequency of cooling systems by orders of magnitude and makes impossible a cooling system operation without overlap of Schottky bands. In this paper we consider how the band overlap affects the maximum cooling rate and the optimal gain.

43 PARTICLE ACCELERATORS↗
DOE OSTI2022

Titanium Carbide MXene Hole Contacts for CdTe Photovoltaics

CdTe is a high‐efficiency thin‐film photovoltaic technology that has seen tremendous commercial success over the past decade. Yet despite the improvement of other device characteristics, the fabrication of an ohmic hole back contact layer has remained a challenge due to the high ionization potential of CdTe, which limits the external potential that can be feasibly reached even as other characteristics of the device improve. MXenes, a family of 2D materials with rapidly growing scientific and commercial interest, offer a promising route to forming low‐cost, low‐barrier contacts due to their demonstrated high work function, metallic conductivity, and facile solution processing from benign solvents. Here, it is shown that Ti 3 C 2 T x MXene films processed from an aqueous colloidal dispersion can perform as a highly efficient hole contact material for CdTe solar cells, resulting in high power‐conversion efficiencies. The role of the Schottky barrier formation in Ti 3 C 2 T x ‐contacted CdTe devices is probed, and potential pathways for the future development of this potent combination of materials are elucidated. The modularity of the expansive MXene family of materials presents a promising strategy for developing next‐generation hole contacts for CdTe solar cells.

14 SOLAR ENERGY↗
DOE OSTI2026

Ohmic contact formation at the Au/Sr 3 Ir 2 O 7 interface

Here, using X-ray photoelectron spectroscopy (XPS), we show that Au forms an Ohmic contact with the surface of the narrow-bandgap Mott insulator Sr 3 Ir 2 O 7 thin films. XPS reveals no significant binding energy shift with increasing Au overlayer thickness on epitaxial Sr 3 Ir 2 O 7 (001) thin films, consistent with the linear current-voltage (I-V) behavior and indicative of negligible band bending. The absence of Schottky barrier formation at the Au/Sr 3 Ir 2 O 7 interface corroborates the metallic surface character of the Sr 3 Ir 2 O 7 thin film, as observed in angle-resolved photoemission spectroscopy (ARPES) studies, suggesting that the interface behaves effectively as a metal-on-metal contact. Furthermore, XPS points to the presence of distinct surface/interface and bulk electronic states for Sr 3 Ir 2 O 7 . This study provides critical material information for designing iridate-based electronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Measuring the flatband potential in 2D semiconductors: Pitfalls and a possible SECCM solution

The flatband potential (V fb ) is a critical parameter in semiconductor electrochemistry, defining the potential at which no excess charge exists at the semiconductor/electrolyte interface. It serves as a key reference for interpreting charge transfer kinetics and current–voltage behavior. However, conventional methods like Mott–Schottky analysis fail for atomically thin 2D materials due to the breakdown of the depletion approximation. This perspective examines the limitations of traditional V fb measurements for 2D semiconductors and the experimental challenges that arise. To address these issues, we propose using scanning electrochemical cell microscopy (SECCM) to spatially resolve the potential of zero charge (V pzc ), equivalent to V fb . This approach mitigates sample heterogeneity issues, such as pinholes or multilayer defects, and offers a pathway to more accurate electrochemical characterization. Ultimately, this method will enhance understanding of current–potential behavior in 2D materials, supporting the design of advanced systems for photoelectrocatalysis, energy conversion, and sensing.

2D semiconductors↗
DOE OSTI2021

Effect of Cu on the passivity of Ti–xCu (x = 0, 3 and 5 wt%) alloy in phosphate-buffered saline solution within the framework of PDM-II

The effect of copper content on the passivity of Ti–xCu alloys in a phosphate-buffered saline electrolyte (pH 7.4), in the steady-state condition, was examined using potentiostatic polarization, electrochemical impedance spectroscopy, and Mott-Schottky analysis. The study demonstrates that the oxide layer forms on the Ti–xCu alloys surface have n-type semiconducting character, and the steady-state thickness of the oxide layer is observed linearly and depends on the applied potential. The study observations are in line with the predictions of the Point Defect Model (PDM-II), which provides a physiochemically realistic description of the oxide layer formation on Ti–xCu alloys. The observations reveal that the Cu additions result in a decrease in the charge transfer resistance and capacitances associated with the hydroxide and barrier layer, an increase in the donor density, and reduce the electrochemical resistance of the Ti–xCu alloys. The study also exhibits that the decrease in the steady-state current density after the initial addition of 3 wt% of Cu is attributed to the progressive substitution of copper on the cation sublattice of the film resulting in enhanced electrostatic interaction between the immobilized copper $Cu^{x'}_{Ti}$, and the mobile cation interstitials $Cu^{+}_{i}$, which carries the excess current over and that conveyed by oxygen vacancies $V^{••}_o$ in the barrier layer. Moreover, it is also observed that over a hundred-year implant period, about 0.006 cm (0.06 mm) of Ti–3Cu alloy is predicted to lose due to steady-state corrosion in the PBS solution under the given set of conditions, it is further seen that, as the Cu amount increased from 3 wt% to 5 wt% in the Ti–xCu alloys, the steady-state corrosion rate decreases.

Electrochemical Impedance Spectroscopy↗
DOE OSTI2021

Heat capacity and thermodynamic functions of transition metal ion (Cu 2+ , Fe 2+ , Mn 2+ ) exchanged, partially dehydrated zeolite $\mathrm{A}$ ($\mathrm{LTA}$)

Here we have measured the heat capacity from 1.8 to 300 K of partially dehydrated zeolite A (LTA), fully exchanged with Cu 2+ , Fe 2+ , and Mn 2+ ions. The samples have a broad excess heat capacity contribution centered around 4 K, which we attribute to local electric fields splitting the magnetic moments of the cations. The excess heat capacity is modelled using a sum of several Schottky anomalies. From these models, we conclude that the cations in the Cu 2+ zeolite reside in at least four distinct coordination environments, and that some of the coordination environments in all three zeolites are highly asymmetric. We also report theoretical fits of the heat capacity data, and values of the standard thermodynamic functions C P,m , Δ 0K T S m ° , Δ 0K T H m ° , and Φ m ° at smooth temperatures. The standard molar entropies at 298.15 K are 71.8 J·K -1 ·mol -1 for Cu-zeolite A (Cu 0.22 Al 0.49 Si 0.51 O 2 1.04 H 2 O), 71.1 J·K -1 ·mol -1 for Fe-zeolite A (Na 0.01 Fe 0.23 Al 0.50 Si 0.51 O 2 ∙0.77 H 2 O), and 66.0 J·K -1 ·mol -1 for Mn-zeolite A (Mn 0.26 Al 0.49 Si 0.50 O 2 ∙0.53 H 2 O).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗