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DOE OSTI · 3363674

Ohmic contact formation at the Au/Sr 3 Ir 2 O 7 interface

Adegbite, Peace Ikeoluwa [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0009000707812326)·Zaz, M. Zaid [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000178494715)·Zhang, Yuanyuan [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0009000937117572)·Komesu, Takashi [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000228264193)·Kumar, Shiv [Hiroshima Univ. (Japan)] (ORCID:0000000177939276)·Kumar, Amit [Hiroshima Univ. (Japan)]·Miyai, Yudai [Hiroshima Univ. (Japan)]·Shimada, Kenya [Hiroshima Univ. (Japan)] (ORCID:0000000219452352)·Hong, Xia [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000278735774)·Dowben, Peter A. [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000221984710)
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Abstract

Here, using X-ray photoelectron spectroscopy (XPS), we show that Au forms an Ohmic contact with the surface of the narrow-bandgap Mott insulator Sr 3 Ir 2 O 7 thin films. XPS reveals no significant binding energy shift with increasing Au overlayer thickness on epitaxial Sr 3 Ir 2 O 7 (001) thin films, consistent with the linear current-voltage (I-V) behavior and indicative of negligible band bending. The absence of Schottky barrier formation at the Au/Sr 3 Ir 2 O 7 interface corroborates the metallic surface character of the Sr 3 Ir 2 O 7 thin film, as observed in angle-resolved photoemission spectroscopy (ARPES) studies, suggesting that the interface behaves effectively as a metal-on-metal contact. Furthermore, XPS points to the presence of distinct surface/interface and bulk electronic states for Sr 3 Ir 2 O 7 . This study provides critical material information for designing iridate-based electronic devices.

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36 MATERIALS SCIENCE75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY77 NANOSCIENCE AND NANOTECHNOLOGYAngle-resolved photoemission spectroscopyOhmic contactsSchottky barriersSurface statesX-ray photoemission spectroscopy

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Adegbite, Peace Ikeoluwa [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0009000707812326), Zaz, M. Zaid [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000178494715), Zhang, Yuanyuan [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0009000937117572), Komesu, Takashi [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000228264193), Kumar, Shiv [Hiroshima Univ. (Japan)] (ORCID:0000000177939276), Kumar, Amit [Hiroshima Univ. (Japan)], Miyai, Yudai [Hiroshima Univ. (Japan)], Shimada, Kenya [Hiroshima Univ. (Japan)] (ORCID:0000000219452352), Hong, Xia [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000278735774), Dowben, Peter A. [Univ. of Nebraska, Lincoln, NE (United States)] (ORCID:0000000221984710). 2026-06-19. Ohmic contact formation at the Au/Sr 3 Ir 2 O 7 interface. https://doi.org/10.1007/s00339-026-09798-3

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