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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 127 records · Page 7
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Halide perovskite-polymer composite film for bright and stable light-emitting devices

Stability is the primary hindrance for the application of halide perovskite material in light-emitting devices, solar cells, and other devices. In this work, halide perovskite and polymer composite film have been prepared for stable and bright light-emitting devices. Pure-phase Cs4PbBr6 crystals have been synthesized, and their photoluminescence (PL) properties and fluorescence lifetimes have been investigated. The Cs 4 PbBr 6 crystals exhibited high uniformity but underwent rapid photodegradation under light irradiation. To address this issue, we prepared bright light-emitting devices using composite of Cs 4 PbBr 6 crystals and polyethylene oxide (PEO) as the emission layer. The aim was to improve the optical and physical properties of halide perovskites, such as photodegradation and stability. PEO, with its excellent film-forming ability, created a uniform and dense film on the halide perovskite surface, filling microscopic defects and providing a protective barrier. FTIR, morphology, and PL analyses confirmed the protective role of the halide perovskite and polymer composite film. The composite film light-emitting devices demonstrated improved stability and higher PL brightness, with a peak brightness approaching 3 × 10 8 cd/m 2 , which was approximately 75% higher than the pure halide perovskite devices.

Composite film↗
DOE OSTI2026

Direct comparison of gamma, electron beam and X-ray radiation effects on the polymers of a pulsed lavage device

Gamma radiation used for sterilization of medical devices is challenged by cobalt-60 supply and commercial capacity. To maintain a robust radiation sterilization marketplace for the rapidly growing single-use medical device industry, investigation of potential alternatives to gamma technology, such as electron beam (e-beam) and X-ray technology, is critical. In this work, we directly compare the effects of radiation source and absorbed dose level on the polymeric materials and function of a commercial pulsed lavage device used for wound care. Product functionality, polymer mechanical, and polymer optical properties were evaluated using standard methods and input from the device manufacturer. Test results show that functionality of the product was not inhibited by radiation although the battery in the device exposed to X-ray exhibited greater voltage loss compared to batteries in products exposed to gamma or e-beam. Statistically significant differences between gamma and e-beam exposure and between gamma and X-ray exposure were also observed for product appearance in terms of yellowness index of several of the polymers considered. Overall, the results of this study support the viability of e-beam and X-ray radiation technologies as alternatives to cobalt-60 gamma technology for sterilization of the single-use pulsed lavage medical device investigated.

Electron beam↗
DOE OSTI2023

Operando Temperature Measurements of Photovoltaic Laser Power Converter Devices Under Continuous High-Intensity Illumination

Photovoltaic devices that operate under extremely high irradiances, such as laser power converters (LPCs), may also operate at elevated temperatures, even under active cooling, as the result of large temperature gradients. We demonstrate the operation of GaAs LPC devices under orders of magnitude of irradiances up to 150 W/cm 2 in a monochromatic laser simulator with an active cooling stage. The steady-state open-circuit voltage (V OC ) as a function of irradiance is known to droop at high irradiance as the result of junction heating, but the junction temperature can be difficult to measure by conventional methods. Fast, transient V OC measurements under these extreme operating conditions are used here to determine the junction temperature. Empirical V OC temperature coefficients of the devices at each irradiance of interest are determined and used as an integral part of this technique. We show that the thermal design of different LPC devices strongly affects the operating temperature of the junctions. Knowledge of the operating temperature can be a strong tool for understanding the nature of loss mechanisms and improving the design for the operation of photovoltaic LPCs at high irradiances. Furthermore, this technique can be used for laboratory devices during initial design as well as to characterize mass-produced and packaged devices for quality control.

14 SOLAR ENERGY↗
DOE OSTI2022

Comparative Investigation of Current-Source Inverters using SiC Discrete Devices and Power Modules

The purpose of this paper is to investigate the impact of the SiC device packages on the commutation performance characteristics of current-source inverters (CSIs). The parasitic components in the CSI current commutation loop between the two-phase legs and output capacitors have a significant impact on the high-frequency performance of the SiC devices. To meet the elevated current requirements of high-power CSIs, it is often necessary to connect multiple discrete devices in parallel which increases the current commutation loop length. The selection of compact high-power SiC MOSFET and Schottky diode modules instead of discrete devices can be highly desirable to reduce the loop inductance and improve the system performance and power density. Two CSI benchtop prototype units, one with SiC discrete devices and the other with power modules, have been designed and tested, and the performances of the two CSIs are compared. The CSI with SiC power modules significantly reduces the inverter volume and lowers the parasitic inductance by 60% and the voltage ripple amplitude by 20% compared to the CSI unit with discrete devices.

42 ENGINEERING↗
DOE OSTI2020

Characterization and Analysis of the Energy-Reporting Accuracy of Connected Devices

Emerging energy-efficient building systems increasingly exhibit greater functionality, often requiring multiple operating modes (e.g. white-tunability for lighting products and data traffic for devices with networked, integrated sensors). This increased functionality makes energy consumption estimates more complex. Given that these functions consume energy, the energy performance of such building systems is dependent on what operating modes they use and how much time they spend in each mode. Devices and systems that can report their own energy consumption mitigate this energy-performance uncertainty. This study explores the energy-reporting accuracy of market-available connected electrical outlets. The study considers two residential-market products (five units each, one outlet per unit) and three commercial-market products (two units each, 18 to 24 outlets per unit) with the ability to report power drawn and/or energy consumed by devices connected to their receptacles. The products were purchased through typical market channels. Pacific Northwest National Laboratory (PNNL) conducted testing in December 2018 at its Connected Lighting Test Bed (CLTB), using a custom-developed test setup and method adapted from industry standards. The setup collected energy-consumption data reported by the outlet devices under test (DUTs) at one-minute intervals and compared that data with measurements taken by a reference meter over a range of test conditions. The residential products reported power draw but not interval or cumulative energy consumption. The commercial products reported both power draw and cumulative energy consumption. Relative reporting error (RRE) was calculated for all measurements, and analysis of the results revealed variations across devices and test conditions. The total number of measurements (50 for each residential product, 60 for each commercial product) offers an appreciable comparison of performance at the make/model level. The average RRE of the residential products derived from reported power draw was -0.02% and -1.20%. The average RRE for two of the three the commercial products derived from reported power draw was worse than those of the residential products (-2.40%, -2.72%, -0.36%). The internal integration of power over time, used to calculate cumulative energy consumption, typically occurs at current and voltage sampling rates much higher than once per minute. This suggests that the average commercial-product RRE derived from reported energy consumption should be very consistent and better than performance based on reported power draw. However, the RRE derived from reported energy consumption varied significantly across the three makes of commercial-market products and was uniformly less accurate than performance based on reported power draw. Subsequent analysis identified a number of root causes for this decrease in performance, most of which were related to reporting resolution. The goals of this study are to generate awareness of building systems capable of reporting their own energy consumption, further interest in the value of energy data for a variety of uses, draw attention to how the accuracy of reported metrics can be characterized, and quantify the performance variation found in marketavailable products. The results of this study and subsequent related work may be relevant to stakeholders in industry-specification and standards-development organizations. The methods this study employs could inform test and measurement procedures and performance classifications for connected outlets, lighting products, and other building systems capable of reporting their own energy consumption. The study concludes with stakeholder recommendations, including the following: • Energy-reporting device and system manufacturers developing products that report energy consumption should characterize the accuracy of reported metrics using a reference meter calibrated by an independent laboratory that was accredited by an ILAC MRA signatory (and whose scope of accreditation explicitly covers energy measurement), and should include this information on product data sheets. • Standards and specification development organizations should develop application-specific performance classifications that end users can understand and relate to their energy-data use needs (e.g., 2% accuracy class for utility streetlight energy billing needs, or 10% accuracy class for ESCO performance verification needs). • Current or potential owners, operators, and specifiers of energy-reporting building systems should rigorously analyze the dependency of current and planned energy-data use cases on accuracy, noting in particular the dependence (or lack thereof) on relative vs. absolute accuracy, and on trueness vs. precision (i.e., repeatability), and should communicate use-case needs to industry standards and specification organizations.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗
DOE OSTI2026

Spatiotemporal Thermal Coupling in VO 2 Device Arrays

Correlated oxides such as VO 2 exhibit an electrically driven insulator–metal transition (IMT) that underlies their promise for neuromorphic and memory devices. Yet the IMT is not a uniform bulk process but a spatiotemporal phenomenon in which local heating nucleates filaments, contracts or dissolves them with the electric field, and couples to the environment. In this work, we directly image the VO 2 IMT dynamics by mid-wave infrared, thermography synchronized with electrical transport, resolving device temperature with micrometer spatial and microsecond temporal resolution. At the single-device level, we capture the full cycle of filament nucleation, contraction, and relaxation during current/voltage-driven resistive switching. At the array level, we show that heat propagates across etched gaps with an effective length scale of ∼131 µm, enabling cooperative behaviors among electrically isolated devices. Short-range distanced devices exhibit mutual filament attraction and sequential dissolution, while long-range distanced devices differentiate into distinct roles: drivers that initiate switching, cooperative responders that undergo assisted self-oscillations, and passive reporters that record the thermal field. Furthermore, these results reframe thermal crosstalk, long regarded as parasitic, as an intrinsic coupling channel and design principle for organizing collective switching behaviors, with direct implications for emergent circuit functionality in neuromorphic and unconventional computing architectures.

coupling↗
DOE OSTI2025

In-device Battery Failure Analysis

Lithium-ion batteries are indispensable power sources for a wide range of modern electronic devices. However, battery lifespan remains a critical limitation, directly affecting the sustainability and user experience. Conventional battery failure analysis in controlled lab settings may not capture the complex interactions and environmental factors encountered in real-world, in-device operating conditions. Here, this study analyzes the failure of commercial wireless earbud batteries as a model system within their intended usage context. Through multiscale and multimodal characterizations, the degradations from the material level to the device level are correlated, elucidating a failure pattern that is closely tied to the specific device configuration and operating conditions. The findings indicate that the ultimate failure mode is determined by the interplay of battery materials, cell structural design, and the in-device microenvironment, such as temperature gradients and their fluctuations. This holistic, in-device perspective on environmental influences provides critical insights for battery integration design, enhancing the reliability of modern electronics.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Growth Optimization and Device Integration of Narrow‐Bandgap Graphene Nanoribbons

Abstract The electronic, optical, and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom‐up fabrication based on molecular precursors. This approach offers a unique platform for all‐carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, the growth, characterization, and device integration of 5‐atom wide armchair GNRs (5‐AGNRs) are studied, which are expected to have an optimal bandgap as active material in switching devices. 5‐AGNRs are obtained via on‐surface synthesis under ultrahigh vacuum conditions from Br‐ and I‐substituted precursors. It is shown that the use of I‐substituted precursors and the optimization of the initial precursor coverage quintupled the average 5‐AGNR length. This significant length increase allowed the integration of 5‐AGNRs into devices and the realization of the first field‐effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. The study highlights that the optimized growth protocols can successfully bridge between the sub‐nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Measuring the maximum capacity and thermal resistances in phase-change thermal storage devices

Thermal energy storage can increase the efficiency of the electric grid by adding flexibility to thermal systems. The value of thermal storage is a function of its energy and power density, which are driven by the capacity and thermal resistances in the storage device. Measuring these properties in-situ at the device level is an important step to understanding the performance and improving the design of thermal storage systems. Here, we present methods to measure the total capacity and thermal resistances in heat exchangers with integrated phase change materials. These methods are demonstrated on two thermal storage devices - a 570-kWh ice-based storage tank and a 0.35-kWh graphite-tetradecane composite device. The results show how thermal resistances evolve with the state of charge and discharge rate in these devices and quantify the impact of applied pressure on the contact resistance in composite phase change material heat exchangers. The proposed method allows for easy comparison between different systems and provides information on the thermal bottlenecks limiting performance. Ultimately, these measurements will allow designers to make robust, high-performance thermal storage devices for next-generation thermal systems.

25 ENERGY STORAGE↗
DOE OSTI2021

Enabling bifacial thin film devices by developing a back surface field using Cu x AlO y

Bifacial solar cells have the potential to increase the energy yield per unit area over traditional monofacial devices without significant added cost, driving $/kWh costs lower and accelerating the adoption of solar photovoltaics. However, the performance of bifacial thin film solar cells significantly lags that achieved by crystalline silicon cells. Here we incorporate wide bandgap Cu x AlO y as a back buffer layer for CdTe devices and achieve a backside illuminated device with high current density and high fill factor. Moreover, these values remain nearly constant even as the absorber layer thickness changes, indicating that a fully-depleted device is not required for efficient charge collection. We show that this response is indicative of a back surface field, albeit with a persistent high back surface recombination velocity. By managing electron reflection, we achieved a backside illumination conversion efficiency of 7.1% and bifaciality of 0.55 for a 3.3 µm CdTe device and 8.0% and 0.62 for a 2 µm device. Future improvements can be made by identifying and incorporating a passivation material that reduces the back surface recombination velocity.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Improved performance of a near-field thermophotovoltaic device by a back gapped reflector

Various spectral control techniques can be applied to improve the performance of a thermophotovoltaic (TPV) device. For example, a back surface reflector (BSR) is a common structure to improve the performance of TPV devices. A conventional metal BSR structure enhances the photogeneration rate by increasing the absorption probability of photons via back surface reflections, affording a second chance for absorption. However, the effects of surface passivation and external luminescence introduced by BSR structures have been previously ignored, which potentially decreases the performance of TPV devices. Recently, a back gapped reflector (BGR) structure was proposed to greatly improve the performance of far-field TPV devices by reducing imperfect reflections at the semiconductor-metal interface. In the present work, the performance improvement on a thin-film, near-field InAs TPV device with a BGR is investigated, comparing its performance to that with a conventional metal BSR. Surface passivation conditions are also investigated to further improve the performance of TPV devices with back reflectors. Further, the output power and efficiency are calculated using an iterative model combining fluctuational electrodynamics and the full drift diffusion model. For the well-passivated condition, when the BSR is replaced by the BGR, the calculated conversion efficiency of the near-field TPV was improved from 16.4% to 21% and the output power was increased by 10%. Finally, the absorption of the back reflectors and external luminescence loss are analyzed to explain the performance improvement.

external luminescence↗
DOE OSTI2025

High-resolution high-throughput spatiotemporal strain imaging reveals loss mechanisms in a surface acoustic wave device

Surface acoustic wave devices are key components for processing radio frequency signals in wireless communication because these devices offer simultaneously high performance, compact size and low cost. The optimization of the device structure requires a quantitative understanding of energy conversion and loss mechanisms. Here we use stroboscopic full-field diffraction x-ray microscopy to reveal an unanticipated acoustic loss in a prototypical one-port resonator device. A non-uniform acoustic excitation in the active area was responsible for the substantial end and side leakages observed at the design frequency. Quantitative analysis of the strain amplitude using a wave decomposition method allowed the determination of several key device parameters. This high-resolution high-throughput spatiotemporal strain imaging technique is more generally applicable to the study of dynamic strain modulation in nanoscale acoustic, electronic, optical and quantum devices. The high sensitivity allows precise measurement of the strain modulation with picometer-scale amplitude.

Zhou, Tao [ESRF - The European Synchrotron, Grenob↗
DOE OSTI2025

Integration of multiple coinflip devices for high-quality random sampling

Artificial intelligence, scientific computing, and probabilistic computing use random sampling to approximate solutions to various problems, with larger models requiring a substantial quantity of random numbers. To generate the required vast quantity of random numbers at high rates, we explore so-called “coinflip” devices, which are stochastic microelectronic devices ideally capable of independently generating random bits with a tunable weight at a high rate. However, coinflip devices are inherently analog and demonstrate nonidealities, like temperature dependence and drift, that can introduce determinism into the outputs. We present important considerations for building systems of multiple coinflip devices to produce high-quality bitstreams with low error and little dependency on previous bits. Using tunnel diodes as coinflip devices, we implement a control loop to adapt to temperature dependence and generate fair bitstreams with each device. While this can lead to dependencies between bits in a single bitstream, we demonstrate that combining results generated in parallel with individual tunnel diodes can produce fair and unpredictable bitstreams. The suitability of these bitstreams for use in probabilistic computing is then demonstrated through a Monte Carlo approximation of π.

Taylor, Brady Garland [Sandia National Laboratorie↗
DOE OSTI2020

Gunn threshold voltage characterization in GaAs devices with wedge-shaped tapering

Here, we fabricate gallium arsenide-based devices with a wedge-shaped tapering region connected to a rectangular-shaped region and measure the threshold voltage required to trigger the Gunn effect. The threshold voltage reduction is attributed to the focusing of the electric field toward the narrower end of the device and is effective when the device has a steep enough tapering. We also model the electric field profile for the tapered devices using an intuitive graphical approach and the finite element method and provide estimates for the threshold voltages of tapered devices. Finally, we compare the estimates to the measured values and provide possible reasons for the discrepancies. We believe the capability of threshold voltage reduction with the wedge-shaped tapering design could be useful in device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Electrostatic modulation of the lateral carrier density profile in field effect devices with nonlinear dielectrics

The properties of two-dimensional (2D) electronic systems are often effectively controlled using electrostatic gating. The geometry of such field effect devices influences the effectiveness of the gate and the carrier density profile in the 2D device. Here, in this work, we analyze the gate-induced spatial variations in the lateral carrier density in patterned LaAlO 3 /SrTiO 3 devices. We model the electrostatics of the 2D interface using the Thomas-Fermi approximation and compute the gate-induced charge distribution at the interface. We show that the electric field lines generated by the gate are focused at the edges of the device, causing an increased depletion near its edges. This effect is accentuated in LaAlO 3 /SrTiO 3 due to the large, nonlinear dielectric constant of the substrate, and the large distance between the gate electrode and the interface. We experimentally demonstrate one consequence of this effect by directly imaging current distributions in gated heterostructures, finding that insulating regions nucleate at the edges of the device due to the gate. Our results suggest that device geometry and choice of dielectric materials control the charge distribution in 2D systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

Device Feasibility Analysis of Multi-level FeFETs for Neuromorphic Computing

As an emerging non-volatile memory device technology, Ferroelectric Field-Effect Transistors (FeFETs) can enable low-power, adaptive intelligent system design. However, device dimension and operating voltage dependent reliability issues of scaled FeFETs can ultimately lead to degraded performance in solving machine learning tasks. In this article, detailed experimental characterization of FeFET devices of different dimensions have been carried out to explicitly evaluate the non-ideal behavior in device conductance programming properties like number of programming states, cycle-to-cycle (C2C) variations, device-to-device (D2D) variations, and state retention. A hardware-aware software simulation approach has been adopted to capture the adversarial effects of the non-idealities on recognition accuracy through algorithm-level performance assessment by including them in NeuroSim, a popular neural network hardware simulator, to execute a neural network model considering all other hardware constraints. With the added non-idealities, significant accuracy degradation has been observed compared to the ideal scenarios where D2D variations play the most critical role. Thereafter, feasibility of a variation-aware training method has been evaluated to tackle the accuracy drop.

42 ENGINEERING↗
DOE OSTI2022

Thermal Stress Reduction in Power Switching Devices Using Distributed Loss PWM Concept for Current Source Inverters

A new modulation scheme is proposed for current source inverters (CSIs) that reduces the variation and peak junction temperature in the CSIs' power devices. The distributed loss pulse-width modulation (DLM) concept is introduced and applied to traditional space vector modulation methods to develop modified modulation schemes that reduce the thermal stress on power devices. The device junction temperatures resulting from conventional and DLM schemes are compared. Simulation and experimental results confirm that the proposed DLM concept reduces thermal stress on the devices while maintaining the same high output current waveform quality compared to traditional CSI modulation schemes. The CSI power device lifetime (i.e., the number of cycles to failure) are estimated using the simulation and experimental results. The proposed DLM significantly increases the device lifetime (by 5 to 6 times) by reducing the junction temperature variation compared to the conventional modulations.

42 ENGINEERING↗